181 results on '"Niu, Zhi-Chuan"'
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2. Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots
3. Dark current simulation and analysis for InAs/GaSb long wavelength infrared barrier detectors
4. Optical positioning of single quantum dots in micropillar with >65% extraction efficiency for on-demand quantum light sources
5. MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice
6. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory
7. High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector
8. High Order Laterally-Coupled Distributed-Feedback GaSb-Based Diode Lasers at 1.9 μm Wavelength
9. High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers
10. Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice
11. Tunable-correlation phenomenon of single photons emitted from a self-assembled quantum dot
12. Growth and characterization of type-II superlattice photodiodes with cutoff wavelength of 12 μm on 4-in. wafer
13. On the origin of carrier localization in AlInAsSb digital alloy
14. High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices
15. Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar
16. High-Temperature Continuous-Wave Operation of 1310 nm InAs/GaAs Quantum Dot Lasers
17. Development of a cryogen-free sub-3 K low-temperature scanning probe microscope by remote liquefaction scheme.
18. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots
19. InAs/GaSb Superlattice-Based Photodiodes with pπMn Structure for Bias-Selectable Mid/Long Wave Dual-Color Infrared Response
20. Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy
21. Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy
22. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
23. Wet etching and passivation of GaSb-based very long wavelength infrared detectors
24. Dark Current Simulation and Analysis for InAs/GaSb Long wavelength Infrared Barrier Detectors
25. GaSb-based narrow ridge waveguide laser diode with single transverse mode operation
26. GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers*
27. Anomalous circular photogalvanic effect in p-GaAs
28. Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*
29. Single transverse mode GaSb-based ridge waveguide lasers with low lateral beam divergence
30. Distributed Bragg reflector lasers emitting around 2.3μm
31. Polarization measurement of 2.1μm high power GaSb-based lasers
32. Piezoelectric Tunnel FET With a Steep Slope
33. High-performance midwavelength infrared detectors based on InAsSb nBn design*
34. Investigation of active-region doping on InAs/GaSb long wave infrared detectors*
35. Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering
36. Effect of growth temperature of GaAs x Sb 1– x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
37. Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers*
38. Fabrication of GaSb-based distributed Bragg reflector semiconductor lasers
39. 1.2-um InAs/GaAs high-density quantum dot laser
40. High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
41. High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector
42. High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
43. High-Power Laterally Coupled Distributed Feedback Lasers With Metal Gratings Around$2~\mu$m
44. 1.3um InAs/InGaAs QD laser steady output power over 1.07W
45. Single-mode distributed Bragg reflector lasers at 2.08μm
46. Wavelength tuning of type-II “W” quantum well of interband cascade laser
47. Output power improvements of antimonide quantum well laser diodes by rapid thermal annealing on the cavity coating films
48. Room temperature continuous wave operation of GaSb - based semiconductor disk laser near 2 μm
49. High-power, high-spectral-purity GaSb-based laterally coupled distributed feedback lasers with metal gratings emitting at 2 μm
50. High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars
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