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See Supplemental Material for detailed sample structure, data on thickness-dependent YIG|Pt, a back-to-back comparison of the THz signals, data on magnetic dipole radiation, reproducibility, growth conditions and fluence dependence of magnetite.

Chemical substitution is one of the most efficient tools to tune and optimize magnetic and magnetocaloric properties of the giant magnetocaloric materials. In particular, Indium substitutions could be useful both for tuning properties of these interesting intermetallic materials and to unveil their local-scale behavior across the magnetostructural transition via hyperfine techniques. Hence, in order to investigate the effect of Indium additions on the crystal structure, micro-structure, magnetic and magnetocaloric properties, a series of In-containing samples derived from the base Gd5Si1.2Ge2.8 stoichiometry were prepared. The major findings are that while In is insoluble in the 5: 4 phase, it will instead promote the emergence of the impurity 5: 3 phase and segregates into this phase. Hence, In leads to major crystallographic changes, which enhance atomic disorder and disrupt the Si to Ge ratio in the 5: 4 phase. Subsequently, a higher 5: 4 unit cell volume and a lower magnetic ordering temperature are found in the In-substituted samples. Finally, the magnetocaloric properties of the In-substituted samples reveal a detrimental effect on the maximum magnetic entropy change.

We have studied the anomalous Nernst effect (ANE) in [Fe3O4/Pt]-based heterostructures grown at high temperature, by measuring the ANE-induced electric field with a magnetic field applied normal to the sample surface, in the perpendicular magnetized configuration, where only the ANEs from the ferromagnetic layers or magnetic proximity effects can be detected. An ANE voltage is observed for [Fe3O4/Pt]n multilayers, and we further investigated its origin by performing measurements in [Fe3O4/Pt/Fe3O4] trilayers as a function of the Pt thickness. Our results suggest the presence of an interface-induced ANE in the metallic layer, possibly driven by a heat induced subnanometer interdiffusion which affects the nature of the Fe3O4/Pt interface. Despite this ANE, the spin Seebeck effect is the dominant mechanism for the transverse thermoelectric voltage in the in-plane magnetized configuration, accounting for about 70% of the voltage in the multilayers.

© 2021The Author(s). Artículo firmado por más de diez autores. We thank V. P. Amin, S. Sangiao, A. Fert, and F. Casanova for valuable discussions. This research was supported by the Regional Government of Madrid through Project No. P2018/NMT-4321 (NANOMAGCOST-CM) and the Spanish Ministry of Economy and Competitiveness (MINECO) through Project Nos. RTI2018-097895-B-C42, RTI2018-097895-B-C43 (FUN-SOC), PGC2018-098613-B-C21 (SpOrQuMat), PGC2018-098265-B-C31, and PCI2019-111867-2 (FLAG ERA 3 grant SOgraphMEM). J.M.D.T. and A.G. acknowledge support from MINECO and CM through Grant Nos. BES-2017-080617 and PEJD-2017-PREIND-4690, respectively. I.A. acknowledges financial support from the Regional Government of Madrid through Contract No. PEJD-2019-POST/IND-15343. IMDEA Nanoscience is supported by the "Severo Ochoa" Program for Centres of Excellence in R&D, MINECO (Grant No. SEV-2016-0686). A.A., S.P.-W., and J.-C.R.-S. acknowledge support from Toptronic ANR through Project No. ANR-19-CE24-0016-01. P.J.-C., I.L., L.M., P.A.A., and M.R.I. acknowledge support from Project No. MAT2017-82970-C2-R. Electron microscopy observations were carried out at the Centro Nacional de Microscopia Electronica at the Universidad Complutense de Madrid., Spin Hall and Rashba-Edelstein effects, which are spin-to-charge conversion phenomena due to spin-orbit coupling (SOC), are attracting increasing interest as pathways to manage rapidly and at low consumption cost the storage and processing of a large amount of data in spintronic devices as well as more efficient energy harvesting by spin-caloritronics devices. Materials with large SOC, such as heavy metals (HMs), are traditionally employed to get large spin-to-charge conversion. More recently, the use of graphene (gr) in proximity with large SOC layers has been proposed as an efficient and tunable spin transport channel. Here, we explore the role of a graphene monolayer between Co and a HM and its interfacial spin transport properties by means of thermo-spin measurements. The gr/HM (Pt and Ta) stacks have been prepared on epitaxial Ir(111)/Co(111) structures grown on sapphire crystals, in which the spin detector (i.e., top HM) and the spin injector (i.e., Co) are all grown in situ under controlled conditions and present clean and sharp interfaces. We find that a gr monolayer retains the spin current injected into the HM from the bottom Co layer. This has been observed by detecting a net reduction in the sum of the spin Seebeck and interfacial contributions due to the presence of gr and independent from the spin Hall angle sign of the HM used., Ministerio de Economía y Competitividad (MINECO), Ministerio de Ciencia e Innovación (MICINN), Agence Nationale de la Recherche (ANR), Comunidad de Madrid, Centros de Excelencia Severo Ochoa (MINECO), Depto. de Física de Materiales, Fac. de Ciencias Físicas, TRUE, pub

We report the disentanglement of bulk and interfacial contributions to the thermally excited magnon spin current in the spin Seebeck effect under static heating. For this purpose, we have studied the dependence of the inverse spin Hall voltage and the thermal conductivity on the magnetic layer thickness. Knowledge of these quantities allows us to take into account the influence of both sources of thermal spin current in the analysis of the voltage dependence. The magnetic layer thickness modulates the relative magnitude of the involved thermal drops for a fixed total thermal difference throughout the sample. In the end, we attain the separate contributions of both sources of thermal spin current—bulk and interfacial—and obtain the value of the thermal magnon accumulation length scale in maghemite, which we find to be 29(1) nm. According to our results, bulk magnon accumulation dominates the spin Seebeck effect in our studied range of thicknesses, but the interfacial component is by no means negligible

Accessing the regime of coherent phonon propagation in nanostructures opens enormous possibilities to control the thermal conductivity in energy harvesting devices, phononic circuits, etc. In this paper we show that coherent phonons contribute substantially to the thermal conductivity of LaCoO3/SrTiO3 oxide superlattices, up to room temperature. We show that their contribution can be tuned through small variations of the superlattice periodicity, without changing the total superlattice thickness. Using this strategy, we tuned the thermal conductivity by 20% at room temperature. We also discuss the role of interface mixing and epitaxial relaxation as an extrinsic, material dependent key parameter for understanding the thermal conductivity of oxide superlattices.

We report the disentanglement of bulk and interfacial contributions to the thermally excited magnon spin current in the spin Seebeck effect under static heating. For this purpose, we have studied the dependence of the inverse spin Hall voltage and the thermal conductivity on the magnetic layer thickness. Knowledge of these quantities allows us to take into account the influence of both sources of thermal spin current in the analysis of the voltage dependence. The magnetic layer thickness modulates the relative magnitude of the involved thermal drops for a fixed total thermal difference throughout the sample. In the end, we attain the separate contributions of both sources of thermal spin current—bulk and interfacial—and obtain the value of the thermal magnon accumulation length scale in maghemite, which we find to be 29(1) nm. According to our results, bulk magnon accumulation dominates the spin Seebeck effect in our studied range of thicknesses, but the interfacial component is by no means negligible.

We show that an optimized growth of magnetic layer/non-magnetic layer stacks allows for the improvement of the spin-to-charge conversion efficiency. From the analysis of the voltage signal generated in spin pumping experiments due to the inverse spin Hall effect (ISHE) on Y3Fe5O12 (YIG)/Bi stacks, we have determined values for the spin Hall angle and the spin-diffusion length in Bi of 0.0068(8) and 17.8(9) nm, respectively. Based on these results, we have also studied the influence of aging on the spin-to-charge conversion efficiency by performing spin pumping experiments on YIG/Bi stacks after exposing the samples to ambient conditions for several days and up to 150 days. We have found that in YIG/Bi samples with Bi thicknesses around or below the spin-diffusion length, the ISHE voltage signal is still above 80% of its initial value after 100 days.

A metal–insulator transition is observed in spin–orbit-coupled IrO2 thin films upon reduction of the film thickness. In the epitaxially grown samples, the critical thickness (t ∼ 1.5–2.2 nm) is found to depend on growth orientation (001), (100) or (110). Interestingly from the applied point of view, the insulating behavior is found even in polycrystalline ultrathin films. By analyzing the experimental electrical response with various theoretical models, we find good fits to the Efros–Shklovskii-VRH and the Arrhenius-type behaviors, which suggests an important role of electron correlations in determining the electrical properties of IrO2. Our magnetic measurements also point to a significant role of magnetic order. Altogether, our results would point to a mixed Slater- and Mott-type of insulator.

We studied in detail the in-plane magnetic properties of heterostructures based on a ferroelectric BaTiO3 overlayer deposited on a ferromagnetic La2/3Sr1/3MnO3 film grown epitaxially on pseudocubic (001)-oriented SrTiO3, (LaAlO3)0.3(Sr2TaAlO6)0.7 and LaAlO3 substrates. In this configuration, the combination of both functional perovskites constitutes an artificial multiferroic system with potential applications in spintronic devices based on the magnetoelectric effect. La2/3Sr1/3MnO3 single layers and BaTiO3/La2/3Sr1/3MnO3 bilayers using the pulsed-laser deposition technique. We analyzed the films structurally through X-ray reciprocal space maps and high-angle annular dark field microscopy, and magnetically via thermal demagnetization curves and in-plane magnetization versus applied magnetic field loops at room temperature. Our results indicate that the BaTiO3 layer induces an additional strain in the La2/3Sr1/3MnO3 layers close to their common interface. The presence of BaTiO3 on the surface of tensile-strained La2/3Sr1/3MnO3 films transforms the in-plane biaxial magnetic anisotropy present in the single layer into an in-plane uniaxial magnetic anisotropy. Our experimental evidence suggests that this change in the magnetic anisotropy only occurs in tensile-strained La2/3Sr1/3MnO3 film and is favored by an additional strain on the La2/3Sr1/3MnO3 layer promoted by the BaTiO3 film. These findings reveal an additional mechanism that alters the magnetic behavior of the ferromagnetic layer, and consequently, deserves further in-depth research to determine how it can modify the magnetoelectric coupling of this hybrid multiferroic system.

Since the discovery of the spin Seebeck effect (SSE), much attention has been devoted to the study of the interaction between heat, spin, and charge in magnetic systems. The SSE refers to the generation of a spin current upon the application of a thermal gradient and detected by means of the inverse spin Hall effect. Conversely, the spin Peltier effect (SPE) refers to the generation of a heat current as a result of a spin current induced by the spin Hall effect. Here we report a strong enhancement of both the SSE and SPE in Fe3O4/Pt multilayered thin films at room temperature as a result of an increased thermo-spin conversion efficiency in the multilayers. These results open the possibility to design thin film heterostructures that may boost the application of thermal spin currents in spintronics.

We report the fabrication of epitaxial Y 3 F e 5 O 12 (YIG) thin films on G d 3 G a 5 O 12 (111) using a chemical solution method. Cubic YIG is a ferrimagnetic material at room temperature, with excellent magneto-optical properties, high electrical resistivity, and a very narrow ferromagnetic resonance, which makes it particularly suitable for applications in filters and resonators at microwave frequencies. But these properties depend on the precise stoichiometry and distribution of F e 3 + ions among the octahedral/tetrahedral sites of a complex structure, which hampered the production of high-quality YIG thin films by affordable chemical methods. Here we report the chemical solution synthesis of YIG thin films, with excellent chemical, crystalline, and magnetic homogeneity. The films show a very narrow ferromagnetic resonance (long spin relaxation time), comparable to that obtained from high-vacuum physical deposition methods. These results demonstrate that chemical methods can compete to develop nanometer-thick YIG films with the quality required for spintronic devices and other high-frequency applications

We show here that superconductivity can be induced in bismuth nanostripes through electrical contact with an s-wave superconductor. By studying the electrical transport properties of devices containing a bismuth nanostripe with superconducting contacts, we have found that bismuth nanostripes with inner probe distance shorter than 125 nm become superconductor at temperatures above 2 K due to proximity-induced superconductivity. This finding, along with previously demonstrated large spin–orbit coupling in bismuth, opens the way to the design of bismuth-based nanostructures bearing Majorana bound states.

Terahertz emission spectroscopy (TES) of ultrathin multilayers of magnetic and heavy metals has recently attracted much interest. This method not only provides fundamental insights into photoinduced spin transport and spin–orbit interaction at highest frequencies, but has also paved the way for applications such as efficient and ultrabroadband emitters of terahertz (THz) electromagnetic radiation. So far, predominantly standard ferromagnetic materials have been exploited. Here, by introducing a suitable figure of merit, we systematically compare the strength of THz emission from X/Pt bilayers with X being a complex ferro-, ferri- and antiferromagnetic metal, that is, dysprosium cobalt (DyCo5), gadolinium iron (Gd24Fe76), magnetite (Fe3O4) and iron rhodium (FeRh). We find that the performance in terms of spin-current generation not only depends on the spin polarization of the magnet's conduction electrons, but also on the specific interface conditions, thereby suggesting TES to be a highly interface-sensitive technique. In general, our results are relevant for all applications that rely on the optical generation of ultrafast spin currents in spintronic metallic multilayers.

We report the fabrication of epitaxial Y3Fe5O12 (YIG) thin films on Gd3Ga5O12 (111) using a chemical solution method. Cubic YIG is a ferrimagnetic material at room temperature, with excellent magneto-optical properties, high electrical resistivity, and a very narrow ferromagnetic resonance, which makes it particularly suitable for applications in filters and resonators at microwave frequencies. But these properties depend on the precise stoichiometry and distribution of Fe3+ ions among the octahedral/tetrahedral sites of a complex structure, which hampered the production of high-quality YIG thin films by affordable chemical methods. Here we report the chemical solution synthesis of YIG thin films, with excellent chemical, crystalline, and magnetic homogeneity. The films show a very narrow ferromagnetic resonance (long spin relaxation time), comparable to that obtained from high-vacuum physical deposition methods. These results demonstrate that chemical methods can compete to develop nanometer-thick YIG films with the quality required for spintronic devices and other high-frequency applications.

The spin Peltier effect (SPE), heat-current generation as a result of spin-current injection, has been investigated in alternately stacked Pt/Fe3O4 multilayer films. The temperature modulation induced by the SPE in the [Pt/Fe3O4]×n films was found to be significantly enhanced with increasing the number of Pt/Fe3O4 bilayers n. This SPE enhancement is much greater than that expected for a simple stack of independent Pt/Fe3O4 bilayers. The observed n dependence of the SPE can be explained by introducing spin-current redistribution in the multilayer films in the thickness direction, in a manner similar to the enhancement of the spin Seebeck effect in multilayers.

We report temperature dependent measurements of the spin Seebeck effect (SSE) in multilayers formed by repeated growth of a FeO/Pt bilayer junction. The magnitude of the observed enhancement of the SSE, relative to the SSE in the single bilayer, shows a monotonic increase with decreasing the temperature. This result can be understood by an increase of the characteristic length for spin current transport in the system, in qualitative agreement with the recently observed increase in the magnon diffusion length in FeO at lower temperatures. Our result suggests that the thermoelectric performance of the SSE in multilayer structures can be further improved by careful choice of materials with suitable spin transport properties.

We report a systematic study on the thermoelectric performance of spin Seebeck devices based on Fe3O4/Pt junction systems. We explore two types of device geometries: a spin Hall thermopile and spin Seebeck multilayer structures. The spin Hall thermopile increases the sensitivity of the spin Seebeck effect, while the increase in the sample internal resistance has a detrimental effect on the output power. We found that the spin Seebeck multilayers can overcome this limitation since the multilayers exhibit the enhancement of the thermoelectric voltage and the reduction of the internal resistance simultaneously, therefore resulting in significant power enhancement. This result demonstrates that the multilayer structures are useful for improving the thermoelectric performance of the spin Seebeck effect.

The spin transport and spin-to-charge current conversion properties of bismuth are investigated using permalloy/copper/bismuth (Py/Cu/Bi) lateral spin valve structures. The spin current is strongly absorbed at the surface of Bi, leading to ultrashort spin-diffusion lengths. A spin-to-charge current conversion is measured, which is attributed to the inverse Rashba-Edelstein effect at the Cu/Bi interface. The spin-current-induced charge current is found to change direction with increasing temperature. A theoretical analysis relates this behavior to the complex spin structure and dispersion of the surface states at the Fermi energy. The understanding of this phenomenon opens novel possibilities to exploit spin-orbit coupling to create, manipulate, and detect spin currents in two-dimensional systems.

The present invention relates to a thermoelectric device which comprises: a layer of a non-magnetic material (NM) disposed over a layer of a magnetic material (F), wherein said layers form a first bi-layer junction (NM1/F1) of materials having spin Seebeck effect properties; and at least one second bi-layer junction of non-magnetic and magnetic materials (NM2/F2) having spin current transmission properties; wherein the second bi-layer junction (NM2/F2) is arranged to form, together with the first bi-layer junction (NM1/F1), a multilayer structure of materials having an amplified spin Seebeck effect compared to that of the first bi-layer junction (NM1/F1) alone. An optimized device can be obtained by stacking sequences of these bi-layers in a multilayered structure n×(NM/F). The invention provides improved spin Seebeck thermoelectric devices, through a novel arrangement of materials which provide a substantial amplification of the spin pumped currents within the multilayer structure, thus generating enhanced voltage signals compared to those present in the prior art.