27 results on '"Moiseev, K. D."'
Search Results
2. Band Diagram of the InAs1 – ySby/InAsSbP Heterojunction in the Composition Range y < 0.2
3. Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction
4. Optoelectronic properties of the Sb/III-Sb interface induced by laser photooxidation
5. Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure
6. Long-Wavelength LEDs in the Atmospheric Transparency Window of 4.6–5.3 μm
7. InAs(1 – y)Sby/InAsSbP Narrow-Gap Heterostructures (y = 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 μm
8. Response to “Comment on ‘Restoration of the original depth distribution from the SIMS profile using the depth resolution function in framework of RMR model’” [J. Vac. Sci. Technol. B 41, 024003 (2023)]
9. The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots
10. Discovery of III–V Semiconductors: Physical Properties and Application
11. Rearrangement of Electroluminescence Spectra in Type-II n-InAs/n-InAsSbP Heterostructures
12. Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model
13. On the delta-type doping of GaAs-based heterostructures with manganese compounds
14. InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
15. Charge transfer features and ferromagnetic order in semiconductor heterostructures δ-doped with manganese
16. Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy
17. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth
18. Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
19. Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement
20. Quantum insulator in a semimetal channel on a single type II broken-gap heterointerface in high magnetic fields
21. Temperature dependence of the optical and electrical properties of long-wavelength InAsSb-based LED heterostructures
22. Variable-temperature luminescence studies of InAsSb-based LED heterostructures emitting beyond 5 μm
23. Band structure of a hybridized electron-hole system at a single broken-gap type II heterointerface
24. Effects of Magnetic Ordering in Conductivity and Magnetization of GaAs-Based Semiconductor Heterostructures upon Changing the Concentration of the Delta-Layer of Manganese Admixture
25. Band Diagram of the InAs1 –ySby/InAsSbP Heterojunction in the Composition Range y< 0.2
26. InAs(1 –y)Sby/InAsSbP Narrow-Gap Heterostructures (y= 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 µm
27. InSb quantum dashes heterostructures in narrow-gap InAs(Sb, P) matrix system
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.