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32 results on '"Mandorlo Fabien"'

1. Critical materials and PV cells interconnection

Author

Perelman Antoine, Barth Vincent, Mandorlo Fabien, and Voroshazi Eszter

Subjects
critical material, photovoltaic module, architecture, Renewable energy sources, TJ807-830
Abstract

Assessment of the critical nature of a material for an application is a relevant notion to anticipate supply issues for an application and a territory. To establish a list of the critical materials, we have developed an approach taking into account geological scarcity, deployment logistics and societal aspects. This article aims to apply this framework to photovoltaic (PV) module interconnection. We draw the conclusion that even if concerns of critical materials are focused on Silver (Ag) scarcity (on metallization part), interconnection materials such as Tin (Sn) and Bismuth (Bi) are even more critical, mainly due to their mostly dispersive uses. This leads us to a standard module conception analysis and emphasizes the interest of improving a more modularized PV module architecture in order to improve high value recycling. An example of such a conception is given with NICE concept. Another example offering a way to optimize metallization conception toward a less consuming pattern is also described.

Published
2024
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2. NEUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS

Author

Pavanello, Fabio, Marchand, Cedric, O'Connor, Ian, Orobtchouk, Regis, Mandorlo, Fabien, Letartre, Xavier, Cueff, Sebastien, Vatajelu, Elena Ioana, Di Natale, Giorgio, Cluzel, Benoit, Coillet, Aurelien, Charbonnier, Benoit, Noe, Pierre, Kavan, Frantisek, Zoldak, Martin, Szaj, Michal, Bienstman, Peter, Van Vaerenbergh, Thomas, Ruhrmair, Ulrich, Flores, Paulo, Silva, Luis Guerra e, Chaves, Ricardo, Silveira, Luis-Miguel, Ceccato, Mariano, Gizopoulos, Dimitris, Papadimitriou, George, Karakostas, Vasileios, Brando, Axel, Cazorla, Francisco J., Canal, Ramon, Closas, Pau, Gusi-Amigo, Adria, Crovetti, Paolo, Carpegna, Alessio, Carmona, Tzamn Melendez, Di Carlo, Stefano, and Savino, Alessandro

Subjects
Computer Science - Hardware Architecture, Electrical Engineering and Systems Science - Signal Processing
Abstract

This special session paper introduces the Horizon Europe NEUROPULS project, which targets the development of secure and energy-efficient RISC-V interfaced neuromorphic accelerators using augmented silicon photonics technology. Our approach aims to develop an augmented silicon photonics platform, an FPGA-powered RISC-V-connected computing platform, and a complete simulation platform to demonstrate the neuromorphic accelerator capabilities. In particular, their main advantages and limitations will be addressed concerning the underpinning technology for each platform. Then, we will discuss three targeted use cases for edge-computing applications: Global National Satellite System (GNSS) anti-jamming, autonomous driving, and anomaly detection in edge devices. Finally, we will address the reliability and security aspects of the stand-alone accelerator implementation and the project use cases., Comment: 10 pages, 2 figures, conference

Published
2023
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3. Temperature and color management of silicon solar cells for building integrated photovoltaic

Author

Amara Mohamed, Mandorlo Fabien, Couderc Romain, Gerenton Félix, and Lemiti Mustapha

Subjects
cie 1931 color space, bipv, thermal management, operating temperature, arc, conversion efficiency, silicon solar cell, Renewable energy sources, TJ807-830
Abstract

Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

Published
2018
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4. Influence of patterning the TCO layer on the series resistance of thin film HIT solar cells

Author

Champory Romain, Mandorlo Fabien, Seassal Christian, and Fave Alain

Subjects
Renewable energy sources, TJ807-830
Abstract

Thin HIT solar cells combine efficient surface passivation and high open circuit voltage leading to high conversion efficiencies. They require a TCO layer in order to ease carriers transfer to the top surface fingers. This Transparent Conductive Oxide layer induces parasitic absorption in the low wavelength range of the solar spectrum that limits the maximum short circuit current. In case of thin film HIT solar cells, the front surface is patterned in order to increase the effective life time of photons in the active material, and the TCO layer is often deposited with a conformal way leading to additional material on the sidewalls of the patterns. In this article, we propose an alternative scheme with a local etching of both the TCO and the front a-Si:H layers in order to reduce the parasitic absorption. We study how the local resistivity of the TCO evolves as a function of the patterns, and demonstrate how the increase of the series resistance can be compensated in order to increase the conversion efficiency.

Published
2017
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6. Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology.

Author

Gao, Shaochen, Vu, Duc-Tung, Cazimajou, Thibauld, Pittet, Patrick, Le Berre, Martine, Dolatpoor Lakeh, Mohammadreza, Mandorlo, Fabien, Orobtchouk, Régis, Schell, Jean-Baptiste, Kammerer, Jean-Baptiste, Cathelin, Andreia, Golanski, Dominique, Uhring, Wilfried, and Calmon, Francis

Subjects
AVALANCHE diodes, TRENCHES, PHOTONS, SILICON films, PROBABILITY theory
Abstract

The integration of Single-Photon Avalanche Diodes (SPADs) in CMOS Fully Depleted Silicon-On-Insulator (FD-SOI) technology under a buried oxide (BOX) layer and a silicon film containing transistors makes it possible to realize a 3D SPAD at the chip level. In our study, a nanostructurated layer created by an optimized arrangement of Shallow Trench Isolation (STI) above the photosensitive zone generates constructive interferences and consequently an increase in the light sensitivity in the frontside illumination. A simulation methodology is presented that couples electrical and optical data in order to optimize the STI trenches (size and period) and to estimate the Photon Detection Probability (PDP) gain. Then, a test chip was designed, manufactured, and characterized, demonstrating the PDP improvement due to the STI nanostructuring while maintaining a comparable Dark Count Rate (DCR). [ABSTRACT FROM AUTHOR]

Published
2024
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8. NEUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS

Author

Pavanello, Fabio, primary, Marchand, Cedric, additional, O’Connor, Ian, additional, Orobtchouk, Régis, additional, Mandorlo, Fabien, additional, Letartre, Xavier, additional, Cueff, Sebastien, additional, Vatajelu, Elena Ioana, additional, Di Natale, Giorgio, additional, Cluzel, Benot, additional, Coillet, Aurelien, additional, Charbonnier, Benoit, additional, Noé, Pierre, additional, Kavan, Frantisek, additional, Zoldak, Martin, additional, Szaj, Michal, additional, Bienstman, Peter, additional, Van Vaerenbergh, Thomas, additional, Ruhrmair, Ulrich, additional, Flores, Paulo, additional, e Silva, Luis Guerra, additional, Chaves, Ricardo, additional, Silveira, Luis-Miguel, additional, Ceccato, Mariano, additional, Gizopoulos, Dimitris, additional, Papadimitriou, George, additional, Karakostas, Vasileios, additional, Brando, Axel, additional, Cazorla, Francisco J., additional, Canal, Ramon, additional, Closas, Pau, additional, Gusi-Amigó, Adriá, additional, Crovetti, Paolo, additional, Carpegna, Alessio, additional, Carmona, Tzamn Melendez, additional, Di Carlo, Stefano, additional, and Savino, Alessandro, additional

Published
2023
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9. Correlations between DCR and PDP of SPAD integrated in a 28 nm FD-SOI CMOS Technology

Author

Gao, Shaochen Gao, Issartel, Dylan, Dolatpoor Lakeh, Mohammadreza, Mandorlo, Fabien, Orobtchouk, Régis, Kammerer, Jean-Baptiste, Cathelin, Andreia, Golanski, Dominique, Uhring, Wilfried, Calmon, Francis, Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, and Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Published
2023

10. NEUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS

Author

Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors, Barcelona Supercomputing Center, Universitat Politècnica de Catalunya. CRAAX - Centre de Recerca d'Arquitectures Avançades de Xarxes, Pavanello, Fabio, Marchand, Cedric, O’Connor, Ian, Orobtchouk, Regis, Mandorlo, Fabien, Letartre, Xavier, Cueff, Sebastien, Brando Guillaumes, Axel, Cazorla Almeida, Francisco Javier, Canal Corretger, Ramon, Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors, Barcelona Supercomputing Center, Universitat Politècnica de Catalunya. CRAAX - Centre de Recerca d'Arquitectures Avançades de Xarxes, Pavanello, Fabio, Marchand, Cedric, O’Connor, Ian, Orobtchouk, Regis, Mandorlo, Fabien, Letartre, Xavier, Cueff, Sebastien, Brando Guillaumes, Axel, Cazorla Almeida, Francisco Javier, and Canal Corretger, Ramon

Abstract

This special session paper introduces the Horizon Europe NEUROPULS project, which targets the development of secure and energy-efficient RISC-V interfaced neuromorphic accelerators using augmented silicon photonics technology. Our approach aims to develop an augmented silicon photonics platform, an FPGA-powered RISC-V-connected computing platform, and a complete simulation platform to demonstrate the neuromorphic accelerator capabilities. In particular, their main advantages and limitations will be addressed concerning the underpinning technology for each platform. Then, we will discuss three targeted use cases for edge-computing applications: Global National Satellite System (GNSS) anti-jamming, autonomous driving, and anomaly detection in edge devices. Finally, we will address the reliability and security aspects of the stand-alone accelerator implementation and the project use cases., This project has received funding from the European Union’s Horizon Europe research and innovation programme under grant agreement No. 101070238., Peer Reviewed, Article signat per 37 autors/es: Fabio Pavanello 1, Cedric Marchand 1, Ian O’Connor 1, Regis Orobtchouk 1, Fabien Mandorlo 1, Xavier Letartre 1, Sebastien Cueff 1, Elena Ioana Vatajelu 2, Giorgio Di Natale 2, Benot Cluzel 3, Aurelien Coillet 3, Benoit Charbonnier 4, Pierre Noe 4, Frantisek Kavan 5, Martin Zoldak 5, Michal Szaj 5, Peter Bienstman 6, Thomas Van Vaerenbergh 7, Ulrich Ruhrmair 8, Paulo Flores 9, Luis Guerra e Silva 9, Ricardo Chaves 9, Luis-Miguel Silveira 9, Mariano Ceccato 10, Dimitris Gizopoulos 11, George Papadimitriou 11, Vasileios Karakostas 11, Axel Brando 12, Francisco J. Cazorla 12, Ramon Canal 12,13, Pau Closas 14, Adria Gusi-Amigo 14, Paolo Crovetti 15, Alessio Carpegna 16, Tzamn Melendez Carmona 16, Stefano Di Carlo 16, Alessandro Savino 16 / 1 Univ. Lyon, Ecole Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CPE Lyon, CNRS, INL; 2 Univ. Grenoble Alpes, CNRS, Grenoble INP, TIMA, 38000 Grenoble, France; 3 ICB UMR CNRS 6303, Universite de Bourgogne Franche-Comte, Dijon, France; 4 Univ. Grenoble Alpes, CEA, LETI, Grenoble, France, 5ARGOTECH, Nachod, Czech Republic; 6 Ghent University - imec, Gent, Belgium; 7 Hewlett Packard Labs, HPE Belgium, B-1831 Diegem, Belgium; 8 Physics Dept. LMU Munchen, Munchen, Germany; 9 INESC-ID Lisboa, Lisbon, Portugal; 10 Department of Computer Science, University of Verona – Verona, Italy; 11 Department of Informatics and Telecommunications, National and Kapodistrian University of Athens, Athens, Greece; 12 Barcelona Supercomputing Center, Barcelona, Spain; 13 Universitat Politecnica de Catalunya, Barcelona, Spain; 14 Albora Technologies SL, Barcelona, Spain; 15 Politecnico di Torino, Dept. of Electronics and Telecommunications (DET), Italy; 16 Politecnico di Torino, Control and Computer Eng. Department, Italy, Postprint (author's final draft)

Published
2023

14. Critical material reduction in PV interconnection

Author

Perelman, Antoine, Barth, Vincent, Mandorlo, Fabien, Voroshazi, Eszter, Département des Technologies Solaires (DTS), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GCIV.EC]Engineering Sciences [physics]/Civil Engineering/Eco-conception
Abstract

International audience; Given the exponential growth of deployed photovoltaic (PV) energy sources, we have to question how to make such growth sustainable. Transition at global scale from fossil fuels to mineral-based renewable energies will indeed induce a sharp turn in materials supply chains. The concept of critical materials covers various sources of supply tensions. More precisely in PV sector, concerns grow for the last few years about Silver price volatility, relative to its scarcity, or about Indium related to its availability.Raw material criticity definition is open to question. No consensus seems to arise yet from literature in order to define influencing factors on criticity. For this study, five supply hazard criteria are selected in order to represent accurately each material supply situation: geological, logistical, geopolitical, industrial and commercial. With those criteria, the materials (and their substitutes) used in PV modules interconnection are listed and for each one, criticity is assessed. List of those elements is the following: Aluminum, Bismuth, Copper, Indium, Nickel, Silver and Tin.Although different dynamics may be observed depending on the concerned material, the main conclusion is that, except Aluminum, all listed elements supplies should face supply tensions by 2050, or even 2030 for the most critical ones [1]. It is important to note that for most of these materials, PV sector has not triggered its critical status.Two material groups should be distinguished. In the first hand, high production and consumption volumes materials (Aluminum and Copper) should not restrict PV energy production capacity expansion projections in the short term but could adversely affect growth in the mid term: by 2050, Copper demand to electrify the whole society should deplete global reserves so its supply is unreliable; it is then compulsory to deeply rethink energy networks, as well as implement a circular approach (reduce, repair, reuse and finally recycle). Moreover, aluminum needed volume for PV on TW scale would induce huge CO2 emissions [2]. On the other hand, other materials (Bismuth, Indium, Silver, and Tin) are used in PV interconnection in dispersive ways: even though PV sector requires a limited amount, they are difficult to recover. These applications must evolve otherwise the known reserves will end around 2040.It draws one main conclusion in the specific case of PV sector: conception has to evolve from dispersive cells interconnection processes, such as low temperature soldering or conductive adhesive bonding. In general, conception step has to focus on end-of-life step to introduce more circular methodologies. Change may happen at three levels: process, material or architecture. Changing or optimizing the deposition process is largely covered in literature over the last 15 years and Silver consumption reduction potential seems to reach its limit [3]. Alternative materials have been rising for the last 5 years and could have a great impact on metallization criticity. In the meantime, critical materials consumption in interconnection could further shrink with a disruptive innovation in module architecture. A few innovation examples, from NICE concept to non-uniform metallization, will be presented.

Published
2022

15. Color management of semi-transparent nano-patterned surfaces

Author

Mandorlo, Fabien, Amara, Mohamed, Nguyen, Hai, Charlety-Meano, Arthur, Belarouci, Ali, Orobtchouk, Régis, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
patterning, CIE 1931 color space, sRGB, brightness, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Physics::Optics, photonic crystal
Abstract

International audience; Many applications require colored surfaces while maximizing photons to pass through with no optical losses. As the perceived color depends on the spectral content and the number of reflected photons for each wavelength, it is necessary to consider not only the chromatic content but also the brightness. As a first application example, photovoltaic modules could see their acceptance in urban situations greatly improved if their color could be controlled while maximizing the number of photons used for energy conversion. In this case, it is important to limit light brightness to avoid glare when light coming from the sun is reflected directly. As another example, a colored and semi-transparent glass layer in the infrared could efficiently protect sensors while camouflaging them, such as lidar in automotive applications. We propose a theoretical study for multicolor applications, considering 2D partially etched grating waveguide structures that behave as a perfect broadband antireflection coating while the residual layer couples light in a waveguided mode in order to reflect only a particular photon band. This strategy allows to produce a large variety of colors and the use of non-absorbing materials avoids any optical loss. The width of the resonance peak is a crucial parameter for balancing brightness in multicolor applications. In the second part, we developed a method for a fast optimization of the geometrical parameters and we applied it to obtain the three primary colors with strong geometrical constraints, so that such structures could be manufactured in a single step by nanoimprint. Finally, we propose some improvements of these structures, in particular by reducing broadband reflection to obtain more saturated colors, or to improve the angular behavior of these structures.

Published
2021
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17. Towards III-V on silicon solar cells

Author

da Silva, Mickael, Boyer-Richard, S., Cornet, C., Létoublon, Antoine, Levallois, Christophe, Rolland, Alain, Even, Jacky, Pedesseau, Laurent, Le Corre, Alain, Loualiche, Slimane, Lombez, Laurent, Guillemoles, Jean-Francois, Mandorlo, Fabien, Lemiti, Mustapha, Durand, Olivier, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), and Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
[PHYS]Physics [physics], [CHIM]Chemical Sciences
Abstract

National audience; A ce jour, les meilleurs rendements de conversion photovoltaïque ont été obtenus avec des cellules solaires multi-jonctions à base de matériaux semi-conducteurs III-V monocristallins sous éclairement solaire concentré. Cependant, le recours aux substrats III-V dans la fabrication de cellules solaires à haut rendement pose le problème des coûts conséquents de ces matériaux. Afin de relever le défi stratégique d’un coût de 0.25-0.5 Euro/Wp, nous avons opté pour l’utilisation du substrat silicium, qui est très abondant sur Terre et donc bon marché. L’intégration monolithique d’hétérostructures III-V sur silicium permettrait de concilier à la fois hauts rendements et bas coûts, tout en capitalisant sur une filière industrielle éprouvée. Nous explorons deux approches de cellules III-V sur Silicium : les cellules tandem et les hétérojonctions.Une cellule solaire tandem, constituée d’une cellule III-V à 1.7 eV sur une cellule c-Si à 1.1 eV, permettrait théoriquement d’atteindre 37% de rendement sous le spectre AM 1.5G. Les cellules top envisagées sont constituées d’un absorbeur en GaAs0,1P0.88N0.02 qui présente un gap pseudo direct de 1.7 eV et un parfait accord de maille avec le substrat silicium, entouré de couches dopées GaP [1]. Après avoir optimisé l’absorbeur [2], nous présentons une étude de l’extraction des porteurs en fonction du dopage n de la couche inférieure de GaP ainsi qu’un optimisation du contact p supérieur. La hausse du dopage n de 2.1018cm-3 à 8.1018 cm-3 est bénéfique pour le rendement car elle diminue l’énergie de seuil d’absorption et permet d’améliorer le courant JSC sans modifier les autres paramètres de la cellule. Une difficulté de ces cellules est aussi d’obtenir des contacts ohmiques sur GaP. L’ajout d’une fine couche de GaAsP p++ de 15 nm en surface de l’échantillon nous a permis de réaliser des contacts ohmiques à l’aide d’alliages habituels sur GaAs tel Ti/Pt/Au au lieu de métaux spécifiques pour le GaP tels Pd/Zn/Pd. Nous explorons aussi les propriétés photovoltaïques des hétérojonctions GaP (n) sur Si (p) qui permettraient d’éviter l’absorption de la couche Si(n) usuelle. Les premières mesures d’EQE montrent une amélioration de l’absorption à haute énergie mais les cellules solaires réalisées présentent des résistances série trop importantes pour être exploitables. [1] Almosni, S., et al., Solar Energy Materials and Solar Cells 147 (2016): 53-60.[2] Da Silva M. et al., Int. Conf. on Molecular-Beam Epitaxy (IC-MBE 2016), 2016, Montpellier, France

Published
2017

18. Température et couleurs des cellules solaires en silicium

Author

Amara, Mohamed, Mandorlo, Fabien, Couderc, Romain, Gérenton, Félix, Lemiti, Mustapha, Centre de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Lemiti, Mustapha

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

19. Laser Ablation of Sub-Stoichiometric Silicon Oxide for Rear Side of PERC Thin Si Solar Cells

Author

Gérenton, Félix, Mandorlo, Fabien, Fourmond, Erwann, Lemiti, Mustapha, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Lemiti, Mustapha

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

21. Fabrication of Thin-Film Crystalline Silicon Solar Cells Reported on Sintered Silicon

Author

Gérenton, Félix, Mandorlo, Fabien, Le Coz, Martine, Cieslak, Krystian, Fave, Alain, Lemiti, Mustapha, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Lemiti, Mustapha

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

22. Optimisation de la face arrière des cellules en couches minces de silicium cristallin

Author

Gérenton, Félix, Mandorlo, Fabien, le Coz, martine, Cieslak, Krystian, Fave, Alain, Lemiti, Mustapha, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Lemiti, Mustapha

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

23. Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de silicium

Author

Da Silva, Mickael, Almosni, Samy, Cornet, Charles, Létoublon, Antoine, Levallois, Christophe, Rolland, Alain, Even, Jacky, Pedesseau, Laurent, Wang, Shijian, Le Corre, Alain, Loualiche, Slimane, Lombez, Laurent, Rale, Pierre, Guillemoles, Jean-François, Mandorlo, Fabien, Lemiti, Mustapha, Durand, Olivier, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2015

24. Advanced Simulation of a PV Module's Color.

Author

McIntosh, Keith R., Amara, Mohamed, Mandorlo, Fabien, Abbott, Malcolm D., and Sudbury, Benjamin A.

Subjects
RAY tracing, SOLAR cells, REFRACTIVE index, ENCAPSULATION (Catalysis), ANTIREFLECTIVE coatings, BUILDING-integrated photovoltaic systems
Abstract

We apply advanced ray tracing to predict the color of an encapsulated solar cell. Previous studies have predicted the color from the thickness and refractive index of the antireflection coating and encapsulants. Here, we demonstrate how other effects influence the color significantly, applying ray tracing to account for texture, for direct and diffuse insolation, for scattering, and for the observer angle. Despite the sophistication of the ray tracing, solutions for each simulation are attained within seconds. With an accurate and quick way to predict a module's color, researchers can avoid costly experimentation when (i) predicting how cell color will change after encapsulation, (ii) determining production tolerances to limit color variability within a cell or module and (iii) optimizing for a particular color for BIPV applications. [ABSTRACT FROM AUTHOR]

Published
2018
Full Text
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25. Photonic nanostructures for advanced light trapping in thin crystalline silicon solar cells

Author

Trompoukis , C., ABDO , I., Cariou , R., COSNIER , T., Cosme , I., Chen , W., Depauw , V., Deparis , O., Dmitriev , A., Drouard , Emmanuel, Foldyna , M., Garcia-Caurel , E., Gordon , I., Heidari , B., HERMAN , A., Lalouat , Loïc, Lee , K., Liu , Jia, LODEWIJKS , K., Mandorlo , Fabien, IMEC ( IMEC ), Catholic University of Leuven ( KU Leuven ), Departement Elektrotechniek - ESAT [leuven], Katholieke Universiteit Leuven ( KU Leuven ), Laboratoire de physique des interfaces et des couches minces [Palaiseau] ( LPICM ), École polytechnique ( X ) -Centre National de la Recherche Scientifique ( CNRS ), Alcatel-Thalès III-V lab ( III-V Lab ), THALES-ALCATEL, Service d'Optique et Acoustique, Université Libre de Bruxelles [Bruxelles] ( ULB ), INL - Nanophotonique ( INL - Photonique ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire Interdisciplinaire Carnot de Bourgogne ( LICB ), Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University [Shenyang], and INL - Photovoltaïque ( INL - PV )

Subjects
[ SPI.MAT ] Engineering Sciences [physics]/Materials, [ SPI ] Engineering Sciences [physics], [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; no abstract

Published
2015

28. Nanophotonics-based low-temperature PECVD epitaxial crystalline silicon solar cells

Author

Chen, Wanghua, primary, Cariou, Romain, additional, Foldyna, Martin, additional, Depauw, Valerie, additional, Trompoukis, Christos, additional, Drouard, Emmanuel, additional, Lalouat, Loic, additional, Harouri, Abdelmounaim, additional, Liu, Jia, additional, Fave, Alain, additional, Orobtchouk, Régis, additional, Mandorlo, Fabien, additional, Seassal, Christian, additional, Massiot, Inès, additional, Dmitriev, Alexandre, additional, Lee, Ki-Dong, additional, and Cabarrocas, Pere Roca i, additional

Published
2016
Full Text
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29. Temperature and color management of silicon solar cells for building integrated photovoltaic.

Author

Mencaraglia, D., Amara, Mohamed, Mandorlo, Fabien, Couderc, Romain, Gerenton, Félix, and Lemiti, Mustapha

Subjects
SILICON solar cells, PHOTOVOLTAIC power generation
Abstract

Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time. [ABSTRACT FROM AUTHOR]

Published
2018
Full Text
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31. Laser ablation compatible substoichiometric SiOx/SiNy passivating rear side mirror for passivated emitter and rear thin-film crystalline silicon solar cells.

Author

Gérenton, Félix, Mandorlo, Fabien, Fourmond, Erwann, Le Coz, Marine, Blanc-Pélissier, Danièle, and Lemiti, Mustapha

Subjects
SILICON solar cells, MICROFABRICATION, LASER ablation, STOICHIOMETRY, SILICA, SILICON nitride, THIN films
Abstract

Fabrication of industrial thin-film crystalline silicon solar cells remains challenging because of the high level of light trapping and surface passivation required to achieve a good conversion efficiency, while reducing the process cost. This work proposes a solution of rear side reflector supplying both passivation and light trapping, and guaranteeing compatibility with a laser process for local opening in order to use the passivated emitter and rear cell architecture. The key element is the use of substoichiometric silicon oxide deposited by plasma-enhanced chemical vapor deposition with a higher silicon concentration than the usual nearly stoichiometric oxide. This material is absorbent at usual ultraviolet laser wavelengths, and thus allows laser ablation with limited substrate heat, greatly reducing substrate damage after ablation. A layer of this oxide is incorporated into a SiOx/SiNy dielectric stack, which shows the expected qualities in term of passivation and reflectivity. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
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32. Photonic nanostructures for advanced light trapping in thin crystalline silicon solar cells.

Author

Trompoukis, Christos, Abdo, Islam, Cariou, Romain, Cosme, Ismael, Chen, Wanghua, Deparis, Olivier, Dmitriev, Alexandre, Drouard, Emmanuel, Foldyna, Martin, Caurel, Enric Garcia‐, Gordon, Ivan, Heidari, Babak, Herman, Aline, Lalouat, Loic, Lee, Ki‐Dong, Liu, Jia, Lodewijks, Kristof, Mandorlo, Fabien, Massiot, Inès, and Mayer, Alexandre

Subjects
NANOSTRUCTURES, SOLAR cells, ARTIFICIAL photosynthesis, PHOTOVOLTAIC cells, REGENERATION (Biology)
Abstract

We report on the fabrication, integration, and simulation, both optical and optoelectrical, of two-dimensional photonic nanostructures for advanced light trapping in thin crystalline silicon (c-Si) solar cells. The photonic nanostructures are fabricated by the combination of various lithography (nanoimprint, laser interference, and hole mask colloidal) and etching (dry plasma and wet chemical) techniques. The nanopatterning possibilities thus range from periodic to random corrugations and from inverted nanopyramids to high aspect ratio profiles. Optically, the nanopatterning results in better performance than the standard pyramid texturing, showing a more robust behavior with respect to light incidence angle. Electrically, wet etching results in higher minority carrier lifetimes compared to dry etching. From the integration of the photonic nanostructures into a micron-thin c-Si solar cell certain factors limiting the efficiencies are identified. More precisely: (a) the parasitic absorption is limiting the short circuit current, (b) the conformality of thin-film coatings on the nanopatterned surface is limiting the fill factor, and (c) the material damage from dry etching is limiting the open circuit voltage. From optical simulations, the optimal pattern parameters are identified. From optoelectrical simulations, cell design considerations are discussed, suggesting to position the junction on the opposite side of the nanopattern. [ABSTRACT FROM AUTHOR]

Published
2015
Full Text
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