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Slow cooled arc melted Fe-Ga alloys with different compositions were characterized. GI-XRD confirms the BCC structure and existence of single phase A2 in 17 at.% of Ga and multiphase A2 and L12 in 30 at. % of Ga. The Ga defects migrates during annealing and reduces the lattice. The Galfenol alloy with the 30 at.% of Ga has an A2 phase around 400 oC and an L12 phase around 560 oC. The formation of the L12 structure is due to an exposure in high temperature region. The magnetostriction of Fe83 - Ga17 and Fe70 - Ga30 alloys seems to be 64 and 27 ppm. Decrement of magnetostriction is due to change in anisotropy coefficient.

We report on results pertinent to the room temperature First Order Reversal Curve (FORC) analysis of Inverse Heusler alloy Fe2CoSi thin films with different thicknesses (t = 5, 10, 15 and 20 nm). Our analysis infers that magnetostatic interactions between magnetic grains enhance with an increase in the thickness of Fe2CoSi thin films. Indeed, such results are confirmed with the analysis of switching field distribution (SFD). Single domain (SD) to multi domain (MD) transformation is evidenced as the thickness increases from 5 to 20 nm. Single domain state is confirmed by symmetric contour around Bu = 0 axis, while, multidomain state is affirmed with no central peak and spreading of contour parallel to Bu = 0 axis. The change in domain state configuration for different thicknesses might strengthen the application of Fe2CoSi Heusler alloy films for the future spintronic applications.

Ni0.5Zn0.5Fe2O4 is one of the most versatile and technologically indispensable soft magnetic materials; however, a detailed investigation on the effect of substitution-induced cation redistribution...

The present work reports the study of cation distribution in Ni substituted polycrystalline Ba0.5Sr1.5Co2Fe12O22 (Co2Y-BSCFO) hexaferrite samples using complimentary experimental methods viz., in-field F 57 e Mossbauer and Raman spectroscopy. Combining the analysis of in-field F 57 e M o ¨ ssbauer and Raman spectroscopy measurements it is shown that the substituted Ni in Co2Y-BSCFO preferentially occupies the octahedral site with spin-down configuration i.e., 6cVI. The obtained cation distribution data is found to qualitatively match the magnetization values as obtained from bulk magnetic measurements. Temperature dependent dielectric data reveals a significant dispersion in dielectric constant associated with loss peaks and the conduction-hopping mechanism explains such behavior.

Here, we report the martensitic transition, low temperature structural and magnetoresistive properties of Mn rich Mn-Ni-Sn shape memory Heusler melt spun ribbons. They have been prepared by melt spinning technique. Present ribbons exhibit the first order magneto-structural (i.e. called martensitic) transition below room temperature (RT) from cubic austenite phase to the monoclinic martensite phase. The room temperature as well as low temperature structure is studied using XRD. These results also corroborate with the microstructural analysis at RT, where no elongated thin plates/strips, corresponding to the martensitic phase twin variants are found inside the grains. They have been found to show maximum negative MR (around −11%) around the martensitic transition. The magnetic field dependent MR at different temperatures in the vicinity of martensitic transition has also been studied for the present ribbons.

A series of Gd1−xHoxMnO3 (x = 0, 0.1 and 0.2) compounds known to exhibit multiferroic properties has been investigated for their structural, magnetic and magnetocaloric properties. X-ray diffraction analysis confirms the presence of single orthorhombic phase at room temperature in all the compositions. Low temperature magnetocaloric properties of these compounds have been studied through specific heat measurements in the temperature range of 0–80 K under different magnetic fields of 0, 2 and 5 T. These studies also revealed the existence of Mn3+ ordering transition and lock-in transition (Tlock) near 40 K and 20 K, respectively. These compounds displayed antiferromagnetic (AFM) ordering of Gd3+ ions at low temperatures below 10 K. The magnetocaloric effect has been quantified in terms of the magnetic entropy change (ΔS)M and adiabatic temperature change (ΔT)ad in the vicinity of AFM transitions.

Low temperature preparation of nanostructured CoCrxFe2-xO₄ (0

The proposed research aims to provide solutions for major problems in construction of buildings using intelligent monitoring devices. There are many problems that can be observed during construction of buildings like low value of strain and improper ratio mixtures. These problems cannot be identified by using a construction engineer and therefore wireless cement sensors are implanted in every pillar of each household. This type of intelligent devices will provide the corresponding values for every accessed users in their remote location itself and the values will also be stored using an online monitoring system. In addition, for making the sensors to work efficiently an Enhanced Pillar Algorithm (EPA) which monitors the value of strain has been integrated. The proposed formulations with EPA have been evaluated using a remote monitoring system called Thing Speak. The change in values has been monitored and these changes are plotted using MATLAB. To test the efficiency of the projected method four scenarios are designed and it is compared with the existing methods where the results of each scenario proves to be much efficient and the projected method shows greater improvement of 78% in terms of different development standards.

The structural, magnetic, and magnetostrictive properties of Fe73-Ga27-x-Dyx (x = 0, 0.25, 0.50, 0.75, and 1) alloys synthesised by arc melting and quenching at 1000 °C were investigated. X-Ray Diffraction (XRD) analysis confirms the Body-Centered Cubic (BCC) nature of the alloys and the presence of an A2 phase of α-Fe throughout the composition, despite the presence of Dysprosium (Dy). It was revealed that the grains are primarily composed of Fe and Ga, but the grain boundaries contain Fe, Ga, and a very high concentration of Dy. The grains indicate that Dy segregates more at grain boundaries. The low saturation magnetization ∼100 emu g−1 achieved at x = 0.25 is due to Dy-rich phase precipitation. The enhanced magnetostriction ∼119 ppm is related to a significant number of Dy-rich phase precipitates and short-range ordering. However, after x = 0.50, the amount of Dy-rich precipitates has a negative impact on the magnetostrictive behaviour of Dy-substituted Fe-Ga alloys, resulting in a decrease in magnetostriction. This demonstrates that the inclusion of Dy enhances the magnetostrictive quality of Fe-Ga alloys.

Ho doped TbMnO3 multiferroic manganites with the formula Tb1-xHoxMnO3 (where x = 0, 0.1 and 0.2) were synthesized through solid state reaction method. Structural characterization has been done using X-ray diffraction and results confirmed single phase nature of the samples. In order to determine the magnetic and ferroelectric transitions in the materials studied, heat capacity measurements have been undertaken at range 2–300 K for 0T, 2T and 5T magnetic fields. From heat capacity studies three transitions were observed in all the samples in the temperature range 10–45 K. These transitions may be due to the ordering of Mn3+ ions and R3+ ions a detailed explanation of which is given below. Magnetocaloric effect has been studied from the heat capacity measurements under applied magnetic field. At 5T magnetic field, the samples exhibited a magnetic entropy change (ΔS)M of ∼1.6 J/mol K and adiabatic temperature change (ΔT)ad of 3–4 K around 10K in the Ho doped TbMnO3 samples which is considerably high in comparison to earlier reports.

Fe2CoSi based Heusler alloy thin films are deposited on single crystal Si (111) substrate at different substrate temperatures varying from room temperature to 600 °C using ultrahigh vacuum DC magnetron sputtering. Structural analysis of the prepared thin films is carried out using GI-XRD measurement and it conform ordered L21 crystal structure of the films deposited at 450 °C and above. The atomic force microscopic (AFM) images of Fe2CoSi thin films exhibiting 3D-like growth on Si (111) substrate at varying temperatures. The magnetic property of the thin films is studied using vibrating sample magnetometer (VSM). At 450 °C of substrate temperature, the prepared thin film exhibits high saturation magnetization (Ms = 948 emu/cc) and low coercivity (Hc = 8 Oe). The self-energy magnetization of the film and its own field is very high, when the temperature of the substrate was maintained at 450 °C and switching field ratio for this film was obtained as ~ 0.9 due to its high crystallinity and atomic ordering. The electrical property of Fe2CoSi thin film is investigated using four-probe technique and a positive magnetoresistive behavior was observed for thin film deposited at a substrate temperature of 450 °C which indicates the possible half-metallic nature at room temperature. The enhanced magnetic and electrical properties obtained for the thin film prepared at 450 °C substrate temperature is highly suitable for spin ­based device applications.

In this study, an interfacial perpendicular magnetic anisotropy (PMA) is achieved in Mo/Co 2 FeAl (CFA)/MgO/Mo multilayer with good thermal stability up to 400 °C by tuning the annealing temperature and film thickness of CFA and MgO. For an optimized CFA film thickness (1.0 nm) and annealing temperature (400 °C), the CFA/MgO interface plays a main role in achieving the strong PMA property when the MgO film thickness was tuned from 0.5 nm to 2.0 nm. The effective perpendicular magnetic anisotropy energy density (K eff) is approximately 1.67 × 106 erg/cc when tMgO = 2 nm. Surface morphology and surface roughness changes in the films are investigated by atomic force microscopy (AFM). An enhancement in surface smoothness is observed for the annealed films. X-ray photoelectron spectroscopy (XPS) reveals that the strong PMA in Mo/CFA/MgO is originated from the adequate oxidation of Co and Fe at CFA/MgO interface.

Ta [RT]/ CoFeB (2-50nm) [Ts = 500°C] /Ta [RT] films were grown on Silicon dioxide substrates by UHV magnetron sputtering system. The magnetic, microstructural and electrical properties were investigated as a function of CoFeB thickness (tCoFeB) at suitable substrate temperature (Ts). Further, we identify that, the strength of perpendicular coercivity (Hc┴)of the stacks mainly depends on the tCoFeB. Higher Hc┴ value of ≈ 564 Oe is observed for the thicker CoFeB film. The enhancement in the Hc┴ on increasing the film thickness upto 50 nm is due to the crystallization of CoFeB film at Ts = 500 °C. The morphological studies show larger grain size for thicker CoFeB film. A high value of electrical resistivity (ρ) is obtained by employing the standard four probe method, which further proves the amorphous nature of the CoFeB films. This Ta/CoFeB/Ta at Ts = 500 °C structures having high Hc┴ , large spin polarization (P) and low damping constant (α) values could be a capable candidate in the fabrication of novel spintronic devices.

Fusarium spp. complex, (Fusarium verticillioides, F. subglutinans, F. moniliforme, F. graminearum) causing post flowering stalk rot (PFSR), has been reported as a serious disease in southern Rajasthan, and eastern Gujarat in winter maize. In the present study, emphasis has been laid on the efficacy of twenty seven Trichoderma strains against F. verticillioides which is a major causal organism. Efficacy evaluation of Trichoderma strains was based on the radial growth of the pathogen in the presence of biological control agent (BCA). Based on per cent inhibition three potential native strains of Trichoderma spp (Trichoderma harzianum BThr29, T. asperellum BTas25, and T. erinaceum BTer43) were selected for biological control of PFSR in the field. T. harzianum BThr29, T. asperellum BTas25, and T. erinaceum BTer43 showed per cent inhibition of F. verticillioides by 87.8, 83.9, and 81.1 percent respectively. Maize plants were artificially inoculated with F. verticillioides, and three potential Trichoderma strains were delivered as soil application (Trichoderma enriched FYM 10 tones ha−1), seed treatment (10 g/kg seeds), and drenching (10 g/liter water). Split stem observation at the harvest of crop showed a restricted lesion of T. harzianum BThr29 treated plant at par with fungicidal application with an average mean rating scale of 1–1.3, which showed less than 50% discoloration in inoculated internode. In control, the mean disease rating scale was 3–3.4 which showed 51–75% of the inoculated internode is discolored. Application of Trichoderma strains improved crop stand by reducing lodging from 42.1 to 71.1% in inoculated maize plants, and reduced PFSR disease severity from 17.58 to 62.37%, Fungicidal application reduced lodging of maize plant from 57.91 to 77.78% and PFSR disease by 58.24–64.35% as compared to untreated control. The results obtained suggested that Trichoderma harzianum BThr29 has the potential to be used as a non-chemical alternative for PFSR disease management in maize crops.

The effect of partial substitution of manganese by silicon in Ni47Mn40−xSixIn13 (x = 1, 2, 3) on the structural (martensitic), magnetic transitions and associated magnetocaloric properties around the martensitic transition of these alloys, was investigated. The alloys exhibited the single austenite structure at the room temperature. The lattice contraction was observed with an increase in Si content, thereby inducing the FM and AFM interactions between manganese atoms, which further influence the magnetic and martensitic transitions. The increase in Si concentration was observed with the decrease in valence electron to atom ratio (e/a ratio) and thus influencing the martensitic transitions. The transition temperatures such as martensitic transition (TM) and the Curie transition (TC) of the austenite phase decrease with increasing Si-content. With the increase in Si content from x = 1 to 3, the TM was found to decrease from 259 to 169 K. A high magnetic entropy change (∆S)M of 12.3, 3.1 and 30.6 J kg−1 K−1 was observed for the x = 1, 2, and 3 alloys at their respective martensitic transitions for a magnetic field of 2 T.

In the present report, the microstructural, magnetic and exchange bias properties of Mn rich Mn-Ni-Sn Heusler alloy ribbons have been investigated. We report a giant exchange bias (EB) field of around 6.31 kOe at low temperature (2 K) in the Mn rich Mn50Ni42Sn8 Heusler alloy ribbons, which is found to be significantly larger than that reported in other systems. Giant EB is attributed to the strong exchange coupling between the spin glass/antiferromagnetic phases. The temperature dependence of EB has also been studied in the present report. The microstructural, DC and AC magnetization measurements confirm its first order martensitic transition (i.e. above room temperature) and spin glass nature.

In this study, we report our approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) at oxide/ferromagnetic metal of Heusler alloy (HA) interface by tuning the parameter of annealing temperature. Robust PMA energy density (Keff) of $\sim $ 0.43 $\times $ 106 erg/cm3 and small saturation magnetization (Ms) as low as $\sim $ 248 emu/cm3 have been achieved for MgO/Co2FeAl (CFA)/Mo stacks at 400 $^{\circ }$ C. We identify that PMA energy is thermally stable up to the maximum temperature of 400 $^{\circ }$ C. Effect of annealing temperature on surface morphology, grain distribution, and surface roughness of the stacks are investigated by atomic force microscopy (AFM). Further, X-ray photoelectron spectroscopy (XPS) study demonstrates that the interfacial oxidation decides the strong PMA property at MgO/Co2FeAl interface during the annealing process. This MgO/CFA/Mo trilayer system can be a suitable candidate for the development of low-power consumption, huge-density data storage, high-thermal stability against the annealing temperature, and nonvolatile magnetic memories.

This study investigated microstructure evolution, thermo-magnetic and mechanical behavior of magnetic shape memory thin film at different substrate temperature. X-ray diffraction measurements reveal the evolution of different phase structure concerning substrate temperature. According to microstructure analysis, the grain size increases with the substrate temperature and also the shape of the grain changed from pyramidal to spherical. A strong dependence of magnetic properties on grain size and phase structure is also observed. Coercivity is found to decrease with increasing substrate temperature up to a minimum value of 62 Oe for the film deposited at 773 K and with further increase in substrate temperature it is found to increase. Based on the relationship between grain size and the nanoindentation results, the decline in the hardness and elastic moduli can be reasonably inferred to be associated with enlarged grain size, consistent with the “Hall–Petch” effect and the grain refinement mechanism.

Structural, magnetic and magnetocaloric properties of Gd5Si2Ge2B0.05 alloy, ball milled for different time intervals in the range of 2–50 h were studied. The x-ray powder diffraction analysis of the alloy prior to milling revealed the presence of mixed orthorhombic and monoclinic phases at room temperature. For a milling duration up to 15 h, the alloy powder displayed crystalline nature. Upon further milling, the alloy powder started to lose the crystallinity and after 50 h of milling, the alloy powder displayed amorphous nature. The average particle size of milled samples was found to decrease with increase in milling time. The saturation magnetization value of the bulk alloy 80 emu/g was found to decrease with increase in milling time due to structural disorder. The transition temperature of the milled alloy powder was found to be around 295 K and the transition was found to become broader with increase in milling time. A maximum isothermal entropy change (ΔSmax) of ∼12 J/kg K was obtained in bulk alloy. For a milling duration of 2 h, a marginal decrease of ΔSmax (∼11 J/kg K) was obtained. Whereas, for higher milling durations, (≥ 15 h) a significant decrease in ΔSmax values were observed. However, the broad operating temperature range of the milled powders can be exploited for magnetic refrigeration applications.

Off-stoichiometric Ni-Mn-In films of 500 nm thickness were deposited on Si (100) substrate by dc magnetron sputtering at ambient temperature. As-deposited films were annealed ex situ at 550 °C and 700 °C for 1 h under high vacuum. As-deposited Ni-Mn-In films which were amorphous, exhibited orthorhombic martensite structure upon annealing. The amorphous film was found to be paramagnetic whereas the annealed (martensite) film exhibited weak ferromagnetic behavior. Fe substituted Ni-Mn-In films of the same thickness annealed at 550 °C exhibited orthorhombic martensite structure, whereas films annealed at 700 °C exhibited dual phase (cubic L21 austenite and orthorhombic martensite) structure. Martensite Ni-Mn-Fe-In films showed large magnetic moment as compared to the ternary alloy film. Interestingly, films with dual phase structure yielded much higher magnetic moment. Ni-Mn-Fe-In films with higher thicknesses annealed at 700 °C showed enhanced magnetic moment due to higher L21 phase content in them. Analysis of polar angle variation of resonance field and linewidth of the dual phase Ni-Mn-Fe-In films revealed very low effective perpendicular magnetic anisotropy (3.0 × 103 J/m3) and low Gilbert damping constant (0.009 ± 0.001) for the first time. The new results obtained are interpreted in terms of the crystalline nature of the films.

The Gd5Si2Ge2Bx (0 0.05), both the transitions, Ts and TC shifted to lower temperatures. A maximum magnetic entropy change of 13.6 J/(kg-K) (at 293 K) and refrigerant capacity (RC) of 378 J/kg were obtained in Gd5Si2Ge2B0.05 alloy which conveys that this alloy has an edge over the parent alloy in terms of operating temperature and refrigeration capacity.

Perpendicular Magnetic Anisotropy (PMA) was realized in as-deposited Mo(10)/Co2FeAl0.5Si0.5(CFAS)(3)/MgO(0.5)/Mo multilayer stacks with large perpendicular magnetic anisotropy energy (Keff). PMA of this multilayer is found to be strongly dependent on the thickness of the individual CFAS (tCFAS), Mo (tMo) and MgO (tMgO) layers and annealing temperatures. The interactions at the Mo/CFAS/MgO interfaces are critical to induce PMA and are tuned by the interfacial oxidation. The major contribution to PMA is due to iron oxide at the CFAS/MgO interface. X-ray diffraction (XRD) and infrared spectroscopic (FT-IR) studies further ascertain this. However, an adequate oxidation of MgO and the formation of (0 2 4) and (0 1 8) planes of α-Fe2O3 at the optimal Mo buffer layer thickness is mainly inducing PMA in Mo/CFAS/MgO/Mo stack. Microstructural changes in the films are observed by atomic force microscopy (AFM). X-ray photoelectron spectroscopy (XPS) demonstrates the oxidation of CFAS/MgO interface and the formation of Fe–O bonds confirming that the real origin of PMA in Mo/CFAS/MgO is due to hybridization of Fe (3dz2) and O (2pz) orbitals and the resulted spin-orbit interaction at their interface. The half-metallic nature CFAS with Mo layer exhibiting PMA can be a potential candidate as p-MTJs electrodes for the new generation spintronic devices.

We report on the structural and magnetic properties of YCo thin films and IrMn/YCo bilayers. X-ray diffraction infer that all the films are amorphous in nature. Magnetization versus magnetic field measurements reveal room temperature soft ferromagnetism in all the YCo films. Thin films which were grown at 100 W sputter power with growth rates of 0.677, 0.694 and 0.711 A/sec show better morphology and composition than 50 W (0.333, 0.444 and 0.277 A/sec) grown films. Perpendicular exchange bias in as deposited bilayers is evident for IrMn/YCo bilayers. Exchange bias (EB) decreases in case of in plane measurements and enhances for out of plane measurements after perpendicular field annealing. EB is more in case of out of plane direction due to large perpendicular anisotropy in comparison with in plane direction. Above the critical thickness, EB variation is explained on the basis of random field model in the Heisenberg regime, which has been proposed by Malozemoff. Indeed there exists an inverse relationship between EB and IrMn layer thickness. Evidenced vertical shift apart from the horizontal shift for magnetization loops is attributed to frozen magnetic moments in one of the layers at the interface. Present results would prove to be helpful in spintronic device applications.

Mn rich Ni-Mn-Sn and Ni-Mn-Co-Sn alloy films were deposited on Si (1 0 0) substrate by dc magnetron sputtering from Ni 50 Mn 37 Sn 13 alloy target at 1.8 Pa Ar pressure with 70 W dc power. Co was introduced by placing Co chips on the Ni-Mn-Sn target. As-deposited films were vacuum annealed at 823 K for 1 h. X-ray diffraction patterns of the films revealed modulated 14 M structure of the martensite phase at room temperature. Magnetic entropy change (Δ S m ) across the Curie temperature of the ferromagnetic films was estimated from initial isothermal magnetization curves using Maxwell’s equation. Δ S m and refrigeration capacity ( RC ) of Ni-Mn-Sn and Ni-Mn-Co-Sn films increased with increasing film thickness. Upon Co substitution in Mn/Sn site(s), Δ S m and RC increased more remarkably. The change is more prominent in the case of 360 nm films, wherein a 3.8-fold increase in Δ S M and 8.9-fold increase in RC was observed. Introduction of Co increased the magnetic moment and broadened the magnetic transition. These factors increased Δ S m and RC in Co substituted Ni-Mn-Sn alloy. Since T C shifted to higher temperatures with Co substitution, operating temperature of these magnetic refrigerants also shifted to higher temperature. This study indicates the possibility of developing high temperature cooling devices and waste energy harvesters using these films.

We report the effect of sputtering power (200 W - 350 W) on the structural, topographical and magnetic properties of Co2FeSi (CFS) films deposited at ambient temperatures as compared to the films which were either annealed at 300 °C or were subjected to Electron beam Rapid Thermal Annealed (ERTA) treatment. The structural and morphological analyses reveal changes in their crystalline phases and particle sizes. All the as-deposited and annealed CFS films showed A2 phase crystal structure. Whereas the CFS film sputtered at 350 W followed by ERTA displayed the fully ordered L21 structure. The particles are spherical in shape and their sizes increased gradually with increase in the sputtering power of the as-deposited and annealed CFS films. However, ERTA CFS films had spherical as well as columnar (elongated) shaped grains and their grain sizes increased nonlinearly with sputtering power. M-H studies on as-deposited, annealed and ERTA CFS films show ferromagnetic responses. The comparatively stronger ferromagnetic response was observed for the ERTA samples with low saturation field which depends on the enrichment of fine crystallites in these films. This indicates that, apart from higher sputtering powers used for deposition of CFS films, ERTA process plays a significant role in the enhancement of their magnetic responses. 350 W ERTA film has the considerable saturation magnetization (∼816 emu/cc), coercivity (∼527 Oe) and a good squareness values at 100 K than at 300 K, which could originate from the spin wave excitation effect. Further, the optimized parameters to achieve a CFS film with good structural and magnetic properties are discussed from the perspective of spintronics.

The longitudinal resistivity and anomalous Hall resistivity of 50 nm Co2FeSi films deposited on Si (1 0 0) substrate at different temperatures have been investigated as functions of disorder. The film deposited at 450 °C has minimum disorder and the lowest temperature (Tmin ∼ 11 K) at which resistivity goes through a minimum as a function of temperature. The film with the highest disorder has the largest Tmin, residual resistivity and absolute value of resistivity at any given temperature. The resistivity data have been analyzed taking into account the contributions from electron-electron scattering, electron-phonon scattering and disorder-induced enhanced electron-electron interaction, which dominates at low temperatures. The effect of Tmin is observed in Hall resistivity for all the samples. Anomalous Hall conductivity (AHC) is extremely sensitive to the degree of disorder present in the films and has the value 180 S/cm at 300 K for the most ordered TS450 film, which tallies well with the theoretically calculated value for the Co2FeSi alloy with L21 structure. The influence of disorder on the longitudinal resistivity and anomalous Hall effect has been discussed in detail.

The ground state electronic, magnetic and elastic properties of Co 2 NbGa are studied using first-principles calculations. The investigated system is mechanically and dynamically stable which is confirmed through Born mechanical stability criteria and positive phonon modes. Two kinds of disorders B2 and D 0 3 -types are studied to ensure the experimental magnetic moment in Co 2 NbGa within coherent potential approximation(CPA). The intrinsic anomalous Hall effect and anomalous Nernst effect are analysed from the Berry curvature point of view. The values of anomalous Hall conductivity and anomalous Nernst conductivity are 214.2 S/cm and −2.53 Am-1K-1 within the range of ± 300 meV around Fermi level respectively, and the same are comparable with the values of other Heusler alloys. The Curie temperature ( T C ) is estimated up to 548.7 K through the Heisenberg magnetic exchange interactions within mean-field approximation. Half-metal to a metal transition under pressure is evidenced through band structure and Fermi surface topology. Also the magnetic, Heisenberg exchange, elastic properties are probed under pressure.