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Your search keyword '"Liu, Chengsheng"' showing total 44 results
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44 results on '"Liu, Chengsheng"'

8. Deep Learning-Based Task Offloading for Vehicular Edge Computing

Author

Zeng, Feng, Liu, Chengsheng, Tangjiang, Junzhe, Li, Wenjia, Goos, Gerhard, Founding Editor, Hartmanis, Juris, Founding Editor, Bertino, Elisa, Editorial Board Member, Gao, Wen, Editorial Board Member, Steffen, Bernhard, Editorial Board Member, Woeginger, Gerhard, Editorial Board Member, Yung, Moti, Editorial Board Member, Liu, Zhe, editor, Wu, Fan, editor, and Das, Sajal K., editor

Published
2021
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26. Augmentation Mammoplasty With External Volume Expander-Assisted Autologous Fat Grafting in 305 Asian Patients.

Author

Gao, Qiuni, Liu, Chengsheng, Qi, Zuoliang, Zhai, Peiming, Qi, Jun, Yang, Zhenyu, Hu, Yuling, and Yuan, Xihang

Abstract

Background: External volume expander (EVE)-assisted autologous fat grafting is suitable for breast augmentation, but no large sample study in Asia has confirmed this method.Objectives: The authors reported their experience and outcomes in augmentation mammoplasty with EVE-assisted autologous fat grafting.Methods: A retrospective study was conducted in 305 female patients who underwent augmentation mammoplasty with EVE-assisted fat grafting between September 2012 and December 2020. Doctors utilized Crisalix (Crisalix S.A., Lausanne, Switzerland) for 3-dimensional (3D) imaging acquisition to measure the increase in breast volume to evaluate doctor satisfaction. The Preoperative Satisfaction with Breast and BREAST-Q questionnaires were employed to assess patients' preoperative and postoperative satisfaction, respectively.Results: The 305 female patients were aged 18 to 50 years (mean, 35.9 years). Among them, 68.52% were "very satisfied," 18.69% were "somewhat satisfied," 11.15% were "somewhat dissatisfied," and 1.64% were "very dissatisfied" based on BREAST-Q analysis, whereas 100% were dissatisfied according to the Preoperative Satisfaction with Breast questionnaire. Doctors employed Crisalix to measure the increase in breast volume to evaluate doctor satisfaction. The results showed 76.01% had an increase in breast volume of 150 to 250 mL or >250 mL and were "satisfied" and "very satisfied," respectively, 21.64% had an increase of 50 to 149 mL and were "somewhat satisfied," and 2.30% had an increase <50 mL and were "dissatisfied." There were no complications, such as obvious fat liquefaction, infection, or fat embolism.Conclusions: Augmentation mammoplasty with EVE-assisted fat grafting is effective and satisfying in China. Crisalix for 3D imaging acquisition is convenient and effective in measuring breast volume.Level Of Evidence:4: [ABSTRACT FROM AUTHOR]

Published
2022
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30. Highly flexible SRAM cells based on novel tri-independent-gate FinFET

Author

Fanglin Zheng, Yanling Shi, Liu Chengsheng, Xiaojin Li, and Yabin Sun

Subjects
010302 applied physics, Hardware_MEMORYSTRUCTURES, Computer science, business.industry, Sram cell, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Leakage power, Write margin, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, General Materials Science, Static random-access memory, Electrical and Electronic Engineering, 0210 nano-technology, business, Voltage, Degradation (telecommunications)
Abstract

In this paper, a novel tri-independent-gate (TIG) FinFET is proposed for highly flexible SRAM cells design. To mitigate the read-write conflict, two kinds of SRAM cells based on TIG FinFETs are designed, and high tradeoff are obtained between read stability and speed. Both cells can offer multi read operations for frequency requirement with single voltage supply. In the first TIG FinFET SRAM cell, the strength of single-fin access transistor (TIG FinFET) can be flexibly adjusted by selecting five different modes to meet the needs of dynamic frequency design. Compared to the previous double-independent-gate (DIG) FinFET SRAM cell, 12.16% shorter read delay can be achieved with only 1.62% read stability decrement. As for the second TIG FinFET SRAM cell, pass-gate feedback technology is applied and double-fin TIG FinFETs are used as access transistors to solve the severe write-ability degradation. Three modes exist to flexibly adjust read speed and stability, and 68.2% larger write margin and 51.7% shorter write delay are achieved at only the expense of 26.2% increase in leakage power, with the same layout area as conventional FinFET SRAM cell.

Published
2017

31. Novel tri-independent-gate FinFET for multi-current modes control

Author

Yanling Shi, Fanglin Zheng, Xiaojin Li, Yabin Sun, and Liu Chengsheng

Subjects
010302 applied physics, Materials science, Fin, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Capacitance, Threshold voltage, 0103 physical sciences, Optoelectronics, General Materials Science, Voltage source, Static random-access memory, Electrical and Electronic Engineering, 0210 nano-technology, business, Voltage
Abstract

In this paper, a novel tri-independent-gate (TIG) FinFET is presented for multi-current modes control for the first time. The entire integration flow of proposed TIG FinFET is fully compatible with the mainstream gate-first HKMG FinFET process. Five kinds of ON state modes and threshold voltages can be offered by TIG FinFET without additional voltage sources, and it is demonstrated to have a great potential in dynamic voltage SRAM design. The critical electrical parameters of TIG FinFET in different modes are fully investigated with TCAD simulation and compared to the traditional FinFET. TIG FinFET with double fins is found to possess a distinct different output and capacitance characteristics with single fin FinFET. The underlying physical mechanisms are analyzed and investigated in detail.

Published
2017

40. Analytical capacitance model for 14 nm FinFET considering dual- k spacer

Author

Fanglin Zheng, Jiaqi Ren, Yanling Shi, Liu Chengsheng, Xiaojin Li, and Yabin Sun

Subjects
010302 applied physics, Materials science, Transistor, General Physics and Astronomy, Conformal map, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, Topology, 01 natural sciences, Capacitance, law.invention, Fin (extended surface), Capacitor, Parasitic capacitance, law, Electric field, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Cartesian coordinate system, 0210 nano-technology
Abstract

The conformal mapping of an electric field has been employed to develop an accurate parasitic capacitance model for nanoscale fin field-effect transistor (FinFET) device. Firstly, the structure of the dual-layer spacers and the gate parasitic capacitors are thoroughly analyzed. Then, the Cartesian coordinate is transferred into the elliptic coordinate and the equivalent fringe capacitance model can be built-up by some arithmetical operations. In order to validate our proposed model, the comparison of statistical analysis between the proposed calculation and the 3D-TCAD simulation has been carried out, and several different material combinations of the dual-k structure have been considered. The results show that the proposed analytical model can accurately calculate the fringe capacitance of the FinFET device with dual-k spacers.

Published
2017

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