222 results on '"Linten, Dimitri"'
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2. Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide
3. Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
4. Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors
5. Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application
6. Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
7. Impact of on- and off-chip protection on the transient-induced latch-up sensitivity of CMOS IC
8. A Pragmatic Model to Predict Future Device Aging
9. Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs
10. Efficient Reliability Testing of Emerging Memory Technologies Using Multiple Radiation Sources
11. ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy
12. Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application
13. TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
14. Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
15. Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices
16. Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications
17. LaSiOₓ- and Al₂O₃-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration
18. Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental
19. Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory
20. HBM and CDM ESD Performance of Advanced Silicon Photonic Components
21. Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET
22. Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials
23. Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET’s
24. 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
25. Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
26. Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs
27. Single-Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes
28. Physics-based device aging modelling framework for accurate circuit reliability assessment
29. Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration
30. Physical Modeling the Impact of Self-Heating on Hot-Carrier Degradation in pNWFETs
31. Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach
32. Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs
33. LaSiO x - and Al 2 O 3 -Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration.
34. Impact of interface layer on charge trapping in Si:HfO2 based FeFET
35. On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications
36. Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates
37. RF/High-Speed I/O ESD Protection: Co-optimizing Strategy Between BEOL Capacitance and HBM Immunity in Advanced CMOS Process
38. Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach
39. Discussion on the Figures of Merit of Identified Traps Located in the Si Film: Surface Versus Volume Trap Densities
40. Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation
41. A Compact Physics Analytical Model for Hot-Carrier Degradation
42. Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs
43. Total-Ionizing-Dose Effects on InGaAs FinFETs With Modified Gate-stack
44. Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs
45. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics
46. Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics
47. A physics-aware compact modeling framework for transistor aging in the entire bias space
48. Processing Impact on the Low-Frequency Noise of 1.8 V Input-Output Bulk FinFETs
49. Full (V-g, V-d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs
50. Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2.
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