Search

The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. The rich and complex spin dynamics associated with the van der Waals antiferromagnetic order is expected to generate novel topological phases and phase transitions that are unique to MnBi2Te4. Here we fabricate a device of 7-septuple-layer MnBi2Te4 covered with AlOx capping layer, which enables the investigation of antiferromagnetic quantum anomalous Hall effect over wide parameter spaces. By tuning the gate voltage and perpendicular magnetic field, we uncover a cascade of quantum phase transitions that can be attributed to the influence of spin configurations on charge transport. Furthermore, we find that an in-plane magnetic field enhances both the coercive field and exchange gap of the surface state, in sharp contrast to that in ferromagnetic quantum anomalous Hall state. We propose that these peculiar features arise from the spin flip and flop transitions inherent to van der Waals antiferromagnet. The versatile tunability of the quantum anomalous Hall effect in MnBi2Te4 paves the way for potential applications in topological antiferromagnetic spintronics., Comment: 16 pages, 4 figures

Molecular adsorption is pivotal in device fabrication and material synthesis for quantum technology. However, elucidating the behavior of physisorption poses technical challenges. Here graphene with ultrahigh sensitivity was utilized to detect ozone adsorption at cryogenic temperatures. Significant hole doping observed in graphene indicates a strong interaction between ozone and graphene. Interestingly, the adsorption exhibits asymmetry with positive and negative gate voltages. The strong affinity of ozone provides a tool to modulate materials and devices, while the gate tunability of adsorption offers new insights into construction and manipulation of oxide quantum materials.

Nonlinear charge transport, such as nonreciprocal longitudinal resistance and nonlinear Hall effect, has attracted considerable interest in probing the symmetries and topological properties of new materials. Recent research has revealed significant nonreciprocal longitudinal resistance and nonlinear Hall effect in MnBi2Te4, an intrinsic magnetic topological insulator, induced by the quantum metric dipole. However, the inconsistent response with charge density and conflicting C3z symmetry requirement necessitate a thorough understanding of factors affecting the nonlinear transport measurement. This study uncovers an experimental factor leading to significant nonlinear transport signals in MnBi2Te4, attributed to gate voltage oscillation from the application of large alternating current. Additionally, a methodology is proposed to suppress this effect by individually grounding the voltage electrodes during second-harmonic measurements. The investigation underscores the critical importance of assessing the impact of gate voltage oscillation before determining the intrinsic nature of nonlinear transport in 2D material devices with an electrically connected operative gate electrode., Comment: 16 pages, 4 figures

The chiral edge current is the boundary manifestation of the Chern number of a quantum anomalous Hall (QAH) insulator. Its direct observation is assumed to require well-quantized Hall conductance, and is so far lacking. The recently discovered van der Waals antiferromagnet MnBi$_2$Te$_4$ is theorized as a QAH in odd-layers but has shown Hall resistivity below the quantization value at zero magnetic field. Here, we perform scanning superconducting quantum interference device (sSQUID) microscopy on these seemingly failed QAH insulators to image their current distribution. When gated to the charge neutral point, our device exhibits edge current, which flows unidirectionally on the odd-layer boundary both with vacuum and with the even-layer. The chirality of such edge current reverses with the magnetization of the bulk. Surprisingly, we find the edge channels coexist with finite bulk conduction even though the bulk chemical potential is in the band gap, suggesting their robustness under significant edge-bulk scattering. Our result establishes the existence of chiral edge currents in a topological antiferromagnet and offers an alternative for identifying QAH states.

The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices., Comment: 25 pages, 4 figures

Boundary helical Luttinger liquid (HLL) with broken bulk time-reversal symmetry belongs to a unique topological class which may occur in antiferromagnets (AFM). Here, we search for signatures of HLL on the edge of a recently discovered topological AFM, MnBi2Te4 even-layer. Using scanning superconducting quantum interference device, we directly image helical edge current in the AFM ground state appearing at its charge neutral point. Such helical edge state accompanies an insulating bulk which is topologically distinct from the ferromagnetic Chern insulator phase as revealed in a magnetic field driven quantum phase transition. The edge conductance of the AFM order follows a power-law as a function of temperature and source-drain bias which serves as strong evidence for HLL. Such HLL scaling is robust at finite fields below the quantum critical point. The observed HLL in a layered AFM semiconductor represents a highly tunable topological matter compatible with future spintronics and quantum computation.

The beauty of quantum Hall (QH) effect is the metrological precision of Hall resistance quantization that originates from the topological edge states. Understanding the factors that lead to quantization breakdown not only provides important insights on the nature of the topological protection of these edge states, but is beneficial for device applications involving such quantized transport. In this work, we combine conventional transport and real space conductivity mapping to investigate whether the quantization breakdown is tied to the disappearance of edge state in the hotly studied MnBi2Te4 system. Our experimental results unambiguously show that topological edge state does exist when quantization breakdown occurs. Such edge state is dissipative in nature and could lead to a quantization breakdown due to its diffusive character causing overlapping with bulk and other edge states in real devices. Our findings bring attentions to issues that are generally inaccessible in the transport study of QH, but can play important roles in practical measurements and device applications.

The recently discovered antiferromagnetic (AFM) topological insulator (TI) MnBi2Te4 represents a versatile material platform for exploring exotic topological quantum phenomena in nanoscale devices. It has been proposed that even-septuple-layer (even-SL) MnBi2Te4 can host helical hinge currents with unique nonlocal behavior, but experimental confirmation is still lacking. In this work, we report transport studies of exfoliated MnBi2Te4 flakes with varied thicknesses down to the few-nanometer regime. We observe giant nonlocal transport signals in even-SL devices when the system is in the axion insulator state but vanishingly small nonlocal signal in the odd-SL devices at the same magnetic field range. In conjunction with theoretical calculations, we demonstrate that the nonlocal transport is via the helical edge currents mainly distributed at the hinges between the side and top/bottom surfaces. The helical edge currents in the axion insulator state may find unique applications in topological quantum devices., Comment: 16 pages, 4 figures

Being the first intrinsic antiferromagnetic(AFM) topological insulator(TI), MnBi2Te4 is argued to be a topological axion state in its even-layer form due to the antiparallel magnetization between the top and bottom layers. Here we combine both transport and scanning microwave impedance microscopy(sMIM) to investigate such axion state in atomically thin MnBi2Te4 with even-layer thickness at zero magnetic field. While transport measurements show a zero Hall plateau signaturing the axion state, sMIM uncovers an unexpected edge state raising questions regarding the nature of the 'axion state'. Based on our model calculation, we propose that the edge state of even-layer MnBi2Te4 at zero field is derived from gapped helical edge states of the quantum spin Hall effect with time-reversal-symmetry breaking, when a crossover from a three-dimensional TI MnBi2Te4 to a two-dimensional TI occurs. Our finding thus signifies the richness of topological phases in MnB2Te4 that has yet to be fully explored., Comment: 17 pages, 4 figures