Search

Photonic crystal (PhC) structures with subwavelength periods are widely used for diffractive optics, including high reflectivity membranes with nanoscale thickness. Here, we report on a design procedure for 2D PhC silicon nitride membrane mirrors providing optimal crystal geometry using simulation results obtained with rigorous coupled-wave analysis. The Downhill Simplex algorithm, a robust numerical approach to finding local extrema of a function of multiple variables, is used to optimize the period and hole radius of PhCs with both hexagonal and square lattices, as the membrane thickness is varied. Following these design principles, nanofabricated PhC membranes made from silicon nitride have been used as input couplers for an optical cavity, resulting in a maximum cavity finesse of 33 000, corresponding to a reflectivity of 0.999 82. The role played by the spot size of the cavity mode on the PhC was investigated, demonstrating the existence of an optimal spot size that agrees well with predictions. We find that, compared to the square lattice, the hexagonal lattice exhibits a spectrally wider reflective range, less sensitivity to fabrication tolerances, and higher reflectivity for membranes thinner than 200 nm, which may be advantageous in cavity optomechanical experiments. Finally, we find that all of the cavities that we have constructed exhibit well-resolved polarization mode splitting, which we expect is due primarily to a small amount of anisotropic stress in the silicon nitride and PhC asymmetry arising during fabrication. [ABSTRACT FROM AUTHOR]

Photonic crystal slab devices with subwavelength periods can be tailored to provide remarkable functionality, such as ultrahigh reflectivity in a structure only 200 nm in thickness. Accurate measurement of the characteristics of these structures is essential to compare their performance to theoretical expectations and to better understand the origin of unexpected behavior. In this work, we present a simple non-invasive method employing diffraction of a visible wavelength reference in the Littrow configuration for measuring the period of a photonic crystal slab. We have measured periods of our devices with uncertainty below 0.5 nm and expect that the uncertainty could easily be improved by an order of magnitude. In addition to facilitating development, our approach can be used to explore possible variations in the period of the photonic crystal due to its operating environment and aging.

Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their growth, has limited the ability to create multiple identical sources. Quantum frequency conversion can overcome this issue, particularly if implemented using scalable chip-integrated technologies. Here, we report the first demonstration of quantum frequency conversion of a quantum dot single-photon source on a silicon nanophotonic chip. Single photons from a quantum dot in a micropillar cavity are shifted in wavelength with an on-chip conversion efficiency ≈ 12 %, limited by the linewidth of the quantum dot photons. The intensity autocorrelation function g ( 2 ) ( τ ) for the frequency-converted light is antibunched with g ( 2 ) ( 0 ) = 0.290 ± 0.030 , compared to the before-conversion value g ( 2 ) ( 0 ) = 0.080 ± 0.003 . We demonstrate the suitability of our frequency conversion interface as a resource for quantum dot sources by characterizing its effectiveness across a wide span of input wavelengths (840 nm to 980 nm), and its ability to achieve tunable wavelength shifts difficult to obtain by other approaches.

We demonstrate the tunable quantum beat of single photons through the co-development of core nonlinear nanophotonic technologies for frequency-domain manipulation of quantum states in a common physical platform. Spontaneous four-wave mixing in a nonlinear resonator is used to produce non-degenerate, quantum-correlated photon pairs. One photon from each pair is then frequency shifted, without degradation of photon statistics, using four-wave mixing Bragg scattering in a second nonlinear resonator. Fine tuning of the applied frequency shift enables tunable quantum interference of the two photons as they are impinged on a beamsplitter, with an oscillating signature that depends on their frequency difference. Our work showcases the potential of nonlinear nanophotonic devices as a valuable resource for photonic quantum information science.

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth.