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We comprehensively explored the impact of RF magnetron sputtering conditions on the physical properties of CdS thin films for the first time. Structural, morphological, and compositional properties were altered to a great extent by the sputtering conditions. Very high average transmittances of 94%, 92.5%, 91% and 89% were achieved in CdS thin films with thicknesses of 40, 60, 80, and 100 nm, respectively. A 100-nm thick CdS thin film showed an excessively high mobility of 92 cm2/V·s with an optimum carrier concentration of 1017 cm−3 and resistivity of 103 Ω·cm. An ultra-thin CdTe film (480 nm) with a smooth and crack-free surface was achieved with RF magnetron sputtering. As proof of concept, ultra-thin CdTe solar cells were fabricated by incorporating CdS thin films with thicknesses varying from 40 to 100 nm, and the power conversion efficiency was enhanced from 1.18% to 4.13%, respectively. This work highlights the importance of investigating sputtering conditions to achieve CdS with superior physical properties and enhance ultra-thin CdTe solar cell performance.

We herein report the rapid one-pot synthesis of Cu0.9(In1-xGax)Se2 microcrystals (CIGSe MCs) with diverse morphology using a single solvent for the first time. Besides, new and novel shapes of CIGSe MCs such as trigonal, stacked hexagonal flakes, and bipyramidal hexagonal prism (BPHGPs) are attained as the x-value increases together with a rise in the reaction temperature. Moreover, the electrical properties of CIGSe MCs are tremendously altered, in which BPHGPs exhibited very high mobility of 18.11 (cm2/Vs) and low resistivity of 0.11 (Ωcm). Furthermore, as a proving ground, solar cells are fabricated with a device structure of SLG/Mo/CIGSe/CdS/i-ZnO/Al-ZnO/Ag, wherein power conversion efficiency amended from 0.67 to 4.22% for x = 0.1@225 °C (mixture of irregular and trigonal) and x = 0.3@300 °C (BPHGPs) respectively. Thus, consequential research outcomes firmly emphasize the importance and essence of rapid one-pot synthesis of CIGSe MCs with tunable morphology, which unveiled a significant impact on the electrical properties and solar cell performance.

Herein, different shapes of CdS nanostructures such as irregular, spherical nanoparticles (NPs) and nanorods (NRs) are reported using facile heating up method by tuning the solvent ratio between oleic acid and oleylamine. This is the first report deals with the synthesis of CdS NRs at relatively low reaction temperature as well as investigating the effect of different shapes of CdS on the hybrid solar cells (HSCs) performance. From the structural analysis, a hexagonal crystal structure of CdS is observed. The optical analysis exhibits absorption in the visible region and the calculated bandgap is found to be 2.52 eV. The irregular and agglomerated CdS NPs showed inferior power conversion efficiency (PCE) while CdS NRs have demonstrated maximum PCE of 2.42% in comparison with the standard device. Thus, the research outcomes strongly highlight the impact of various CdS nanostructures on the HSCs performance and open-up new avenue to accomplish the utmost PCE of HSCs in low-cost approach.

CuAlGaSe2 thin films were obtained by one-step electrodeposition in an aqueous medium containing triethanolamine (TEA) as complexing agent, a platinum wire was used as counter electrode and a SnO2:F/CdS substrate as working electrode. The influence of TEA on the reduction potential of species (Cu2+, Al3+, Ga3+ and H2SeO3) involved in the co-electrodeposition of quaternary material was investigated. The cyclic voltammetry study was carried out in the Cu-TEA, Cu-Al-TEA, Cu-AI-Ga-TEA and Cu-Al-Ga-Se-TEA systems and scans revealed the formation mechanism of quaternary CuAlGaSe2. The formation of the quaternary compound CuAlGaSe2 could involve two possible routes: Al3+ and Ga3+ ions induced reduction by Cu3Se2, leading to the formation of CuAlSe2 and CuGaSe2; another is that the Al3+ and Ga3+ may react with H2Se, which are incorporated to more stable species CuAlSe2 and CuGaSe2, respectively. The structural characterization confirmed the formation of CuAlGaSe2. The band gap energy was tuned from 1.64 to 2.28 eV by changing Al/Ga content and annealing temperature.

Undoped and Al, B and Ga-doped In2S3 thin films were deposited on flexible PET/ITO substrates using chemical bath deposition by varying the deposition temperatures (60, 70, 80 and 90 °C) and growth times (120, 150 and 180 min). Citric acid was used as complexing agent along with indium trichloride and thioacetamide as indium and sulfur sources, respectively. The structural, optical and electrical properties of In2S3 thin films were analyzed by Raman spectroscopy, UV-Vis transmittance spectroscopy and Hall Effect measurement. Structural analysis indicated the tetragonal phase of In2S3 films. The optical characterization showed a maximum transmittance of 80% in the visible region. The band gap energy of In2S3 thin films was tuned from 2.06 to 2.94 eV with respect to doping elements and experimental parameters. The electrical characterization showed n-type conductivity for both undoped and doped In2S3 thin films along with the resistivity values between 1 × 10−2 and 1 × 105 Ωcm.