Search

Osteoporosis is considered a risk factor for osseointegration during implant treatment. Photofunctionalization of titanium has been shown to improve bone-based cell adhesion, proliferation, and functional expression, increasing the bone-implant contact rate and bone-implant integration strength. This study aimed to test the hypothesis that photofunctionalization is effective for implant fixation using an osteoporosis rat model. In the biomechanical push-in test, the bone-implant integration strength of the photofunctionalization treatment group was 1.53 times that of the control group (p0.05). These values implied that photofunctionalization restored the ovariectomy-induced low bone-implant integration strength to normal states. In the micro-CT analysis, the BV/TV of the photofunctionalization treatment group was 1.32 times that of the control group (p0.05). These values implied that photofunctionalization restored the ovariectomy-induced low peri-implant bone formation to normal states. These results indicate that photofunctionalization treatment increased peri-implant bone formation and bone-implant integration strength in ovariectomized rats.

We investigated the etching characteristics of hydrogen iodide (HI) neutral beam etching (NBE) of GaN and InGaN and compared with Cl2 NBE. We showed the advantages of HI NBE vs Cl2 NBE, namely: higher InGaN etch rate, better surface smoothness, and significantly reduced etching residues. Moreover, HI NBE was suppressed of yellow luminescence compared with Cl2 plasma. InClx is a product of Cl2 NBE. It does not evaporate and remains on the surface as a residue, resulting in a low InGaN etching rate. We found that HI NBE has a higher reactivity with In resulting in InGaN etch rates up to 6.3 nm/min, and low activation energy for InGaN of approximately 0.015 eV, and a thinner reaction layer than Cl2 NBE due to high volatility of In- I compounds. HI NBE resulted in smoother etching surface with a root mean square average (rms) of 2.9 nm of HI NBE than Cl2 NBE (rms: 4.3 nm) with controlled etching residue. Moreover, the defect generation was suppressed in HI NBE vs. Cl2 NBE, as indicated by lower yellow luminescence intensity increase after etching. Therefore, HI NBE is potentially useful for high throughput fabrication of μLEDs.

We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron microscopy (TEM). In the case of using atomic layer defect-free NBE, the root-mean-square roughness of the Ge Fin sidewall surface is 1/3 times smaller than that using PE. Then, the electron mobility of Ge FinFET was improved by 1.65 times compared with that of a PE etched FinFET sample. For the subthreshold swing, the defect density of the interface between the Ge and gate dielectric film was improved by NBE. Ioff average currents of NBE and PE were around 18.1 and 57.6 nA/μm, respectively. As a result, NBE reduces the off-leakage current to 1/3 times less than PE. This corresponded to the differences in surface roughness and defect generation between NBE and PE. Therefore, we found that NBE could achieve a good performance by defect-free and atomically-flat etching the surface.

The phonon transport in the lateral direction for gap-controlled Si nanopillar/SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors. The gap-controlled Si NP/SiGe composite layer showed 1/100 times lower thermal conductivity than Si bulk. Then, the phonon transport behavior in lateral direction could be predicted by the combination between 3-omega measurement method for thermal conductivity and Landauer approach for phonon transport in Si NP/Si0.7Ge0.3 interlayer composite structure. We found that the NP structure could regulate the phonon transport in the lateral direction by changing the NP gaps. As such, this structure achieves the first step toward phonon transport management in the same electron transportation direction of planar-type MOSFETs and represents a promising solution to heat generation for advanced CMOS devices.

We fabricated a highly water-repellent quartz nanopillar (NP) structure to investigate the effect of varying the contact angle (CA) by using 10-nm-order gaps and 10-nm-diameter NPs. Gaps from 15 to 30 nm led to CAs of more than 100°, showing hydrophobicity, to a maximum of 105°. The mechanism of repelling water on quartz could be explained by the Cassie-Baxter model with a filling factor. A gap of more than 30 nm fills with water due to capillarity, but a gap of less than 30 nm causes water to be repelled by air. We were able to repeatedly fabricate a quartz NP structure with a controllable gap by using a combination of a bio-template and neutral-beam etching and found this structure to be highly water-repellent. The structure has high durability and optical transparency. As a result, we conclude that it can be used in sensors and lenses on various devices such as cameras and radars.

Peri-implantitis is one of the most common complications after dental implant placement. Researchers have demonstrated that the peri-implantitis tends to occur around dental implants with a rough surface rather than those with a smooth surface. We aimed to investigate the ability of a smooth titanium (Ti) surface containing strontium (Sr) to enhance bone formation as a result of strontium's capacity to support osteoblast proliferation and differentiation. A thin titanium oxide film was formed on an as-mirror polished Ti surface by dipping in 5% sodium hypochlorite (NaOCl) solution for 24 h, followed by thermal treatment at 350°C. The Ti surface was then treated with 1% strontium nitrate (Sr(NO

We made nanopillars with intervals of several tens of nanometers and diameter, and examined wettability. When the interval is narrow, the capillary phenomenon can be suppressed and hydrophobicity is realized. On the other hand, when the interval was widened, the wettability decreased due to the capillary phenomenon. As a result, it was found that the Cassie-Baxter model with filling factor gives a hydrophobic effect as the wetting property becomes narrower.

We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.

This study was to elucidate the surface characteristics and in vitro cell behaviors of biomedical titanium (Ti) with the biofunctional surface (nanostructured rutile-Ti dioxide (NanoR-TiO2) layer combined with amino-groups (NH2) and albumin). Biofunctional surface features were analyzed via scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Immunolabeling with nano-gold particles was used to reflect the expected specific binding of protein on the biofunctional surface. In vitro cell behaviors were evaluated by culturing with mouse pre-osteoblastic cell line (MC3T3-E1) at 37 °C in different periods. Analytical results indicated that the sandwich-like (NH2/NanoR-TiO2/Ti) layer was formed on the Ti surface after plasma oxidation and polymerization. Immunolabeling analysis results also proved that the albumin can be successfully bonded with NH2 on NanoR-TiO2 layer. Moreover, cell morphology observation revealed that the biofunctional surface could potentially facilitate cell adhesion and proliferation. Therefore, the biomedical Ti with the biofunctional surface is a promising biomaterial for dental implant applications.

The rapid reduction of feature size in CMOS devices causes their variability to increase, thus reducing the circuit yield [1]-[3]. In particular, the static random access memory (SRAM) cell uses the smallest transistor to achieve high-density integration, the effect of which is a lower yield [4]. The reduction of variability is, therefore, becoming the most important concern for CMOS devices. In this article, we review the effectiveness of introducing multigate devices and microwave annealing (MWA) for performance enhancement.

Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this issue, 2D materials have been studied since 2000. This article reveals the motivation for research on 2D materials for device application.

X-ray photoelectron spectroscopy (XPS) is used to analyze 4-META resin and enamel that are debonded at an adhesive interface. The XPS spectra showed two chemical states for Ca: one resulted from Ca of hydroxyapatite and the other, an unknown chemical state, suggested that Ca was chemically bonded with 4-META. We postulate that for a chemical reaction of 4-META and hydroxyapatite, the chemical structure of carboxyl groups will resemble that of calcium phthalate. Hence, calcium phthalate was used as a reference material. Additionally, the spectra obtained from the adhesive interface and the mixture of calcium phthalate with hydroxyapatite particles were compared using peak deconvolution analysis. XPS analysis revealed that the chemical bond of 4-META with enamel resembled the chemical state of Ca in calcium phthalate. Consequently, we suggest that Ca of the enamel and the carboxyl group of 4-META were chelate-bonded at the interface.

The aim of this study was to evaluate the NaOCl-mediated biofunctionalization of titanium surfaces. Titanium disks stored for 2 weeks were immersed in 5% NaOCl solution for 24 h. A disk immersed in distilled water for 24 h was used as a control. X-ray photoelectron spectrometer assay of the titanium surface after NaOCl treatment demonstrated that organic contaminants containing carbon and nitrogen were removed and the number of hydroxyl groups increased. The NaOCl treatment substantially converted the titanium surface to superhydrophilic status (θ5°), which resulted in an increased number of attached cells and enhanced cell spreading on the NaOCl-treated surfaces. These results indicate that biofunctionalization of the biologically degraded titanium surfaces can be achieved by chemical surface treatment with 5% NaOCl. The mechanism for desorption of strongly adsorbed organic molecules with polar groups such as amino and aldehyde groups from titanium surfaces by ClO

We have experimentally clarified the origin of low-frequency noise, which limits the coherence-time in Si quantum bit (qubit), utilizing cryo-CMOS. At cryogenic temperature (2.5 K), significantly enhanced $1/f$ noise is observed in Si MOSFETs, while it is not seen at room temperature. Interface trap density dependence of noise in Si MOSFETs, changing the surface orientation, revealed that the cryogenic $1/f$ noise is governed by carrier number fluctuation and we identified that the origin of the $1/f\mathrm{noise}$ is interface trap at cryogenic temperature, for the first time. The present study demonstrates that the experiments using well-investigated MOSFETs can provide new knowledge on Si qubits, which it is hardly possible to investigate using Si qubit as itself.

This study was aimed at investigating the protective effects of glass ionomer cement (GIC) and surface pre-reacted glass ionomer (S-PRG) fillers used as dental restorative materials on demineralization of bovine enamel. GlasIonomer FX ULTRA (FXU), Fuji IX GP Extra (FIXE), CAREDYNE RESTORE (CDR) were used as GICs. PRG Barrier Coat (BC) was used as the S-PRG filler. They were incubated in a lactic acid solution (pH = 4.0) for six days at a temperature of 37 &deg, C. The mineral was etched from the enamel surface, and a large number of Ca and P ions were detected in solution. The Al, F, Na, Sr, and Sr ions were released in GICs and S-RPG fillers. The Zn ion was released only in CDR and the B ion was released only in BC. The presence of apparent enamel prism peripheries was observed after six days of treatment for the group containing only enamel blocks. pH values for the FXU, FIXE, CDR, BC, and enamel block groups after six days were 6.5, 6.6, 6.7, 5.9, and 5.1, respectively. Therefore, the observed pH neutralization effect suppressed progression of caries due to the release of several ions from the restoratives.

Studies examining the effect of operator experience on the accuracy of static guided implant surgery have used postoperative computed tomography (CT) images to measure the error, with inconsistent results. The purpose of this study was to try to clarify this issue by using a measurement method based on the postoperative optical scan. Thirty dentists were divided into an experienced group and an inexperienced group. On a partially edentulous mandibular model in the manikin head, each dentist placed three implants via the stereolithographic (SLA) surgical guide. The implant positions were identified by a desktop scanner and compared with the planned positions using a metrology software program. No statistically significant differences were observed for any of the measured positional and angular deviations of the three implant sites between experienced and inexperienced operators (p &gt, 0.01). All the mean values of deviations of the inexperienced group, except the depth deviation, were less than the experienced group. Implants inserted by dentists under 40 years old had significantly better accuracy than senior doctors in the global deviation at implant apex (p = 0.006). Within the limits of this study, we concluded that operator experience is not a critical factor in achieving the accuracy of guided implant surgery via the tooth-supported SLA surgical guide. Large deviations could occur even with the aid of the SLA surgical guide, and care must be taken to avoid errors for both experienced and inexperienced operators.

We have investigated the charge-to-hot-carrier degradation (Q HCD ) in Ge pFinFETs with HfO 2 /Al 2 O 3 /GeO 2 gate stacks. The Q HCD of Ge pFinFETs has a power-law relationship with drain current at each drain voltage, regardless of gate length. Hot-carrier degradation (HCD) is caused when hot holes generated by impact ionization are trapped in as-grown hole traps [1] in the GeO 2 interfacial layer and the trap sites in HfO 2 /Al 2 O 3 film. The velocity of hot carriers of Ge is high because the carrier mobility of Ge is high. In the case of high-velocity hot carriers, the detrapping of the trapped carriers occurs at a constant rate. Therefore, the trapping rate of hot carriers depends on the drain current. This is the reason why Q HCD has a power-law relationship with drain current. Also, in the case of a high impact ionization rate such as that of Ge, the generation of hot carriers is sensitive to the lateral electric field, which is related to the drain voltage. This is the reason why the power-law relationship of Q HCD is determined by drain voltage.

We investigated the surface modification of orthodontic stainless steel wire using electrophoretic deposition (EPD) of bioactive glass (BG). BG coatings were characterized by spectrophotometry, three-dimensional (3D) focal laser scanning microscopy and scanning electron microscopy. The mechanical properties of the BG-coated wires were estimated nanoindentation, three-point bending and drawing friction tests. BG-coated specimens prepared at higher voltage showed higher values for both reflectance and L* compared to those prepared at lower voltage. Specimens coated at higher voltage had significantly lower surface roughness than those coated at lower voltage, and their BG layers had higher hardness and elastic modulus values. In the three-point bending test, BG-coated wires produced significantly lower elastic modulus than non-coated wires. Most BG-coated specimens produced similar frictional forces to those produced by non-coated specimens. The surface modification technique applying EPD and BG coating to orthodontic stainless steel wire could be used to develop new esthetical orthodontic wire.

This study developed a promising approach (low-temperature plasma polymerization with allylamine) to modify the titanium (Ti) surface, which helps the damaged tissue to heal faster. The Ti surface was first cleaned by argon (Ar) plasma, and then the functional amino-groups were coated on the Ti surface via plasma polymerization. The topography characteristics, wettability, and optimal plasma modification parameters were investigated through atomic force spectroscopy, secondary ion mass spectroscopy, and response surface methodology (RSM). Analytical results showed that the formation of a porous surface was found on the Ar plasma-modified Ti surfaces after Ar plasma modification with different parameters. The Ar plasma modification is an effective approach to remove surface contaminants and generate a porous topography on the Ti surface. As the Ti with Ar plasma modification was at 100 W and 190 m Torr for 12 min, the surface exhibited the maximum hydrophilic performance. In the allylamine plasma modifications, the contact angle values of the allylamine plasma-modified Ti surfaces varied between 70.15&deg, and 88.26&deg, in the designed parameters. The maximum concentration of amino-groups (31.58 nmole/cm2) can be obtained from the plasma-polymerized sample at 80 W and 150 mTorr for 22 min. Moreover, the cell response also demonstrated that the allylamine plasma-modified Ti sample with an optimal modification parameter (80 W, 22 min, and 150 mTorr) possessed great potential to increase cell adhesion ability. Thus, the optimal parameters of the low-temperature plasma polymerization with allylamine can be harvested using the RSM design. These data could provide new scientific information in the surface modification of Ti implant.

This paper describes the use of flash lamp annealing (FLA) to fabricate high-Sn content GeSn n-MOSFETs. We exploit FLA processing for both impurity activation and for the solid-phase growth (SPG) of the GeSn channel. High-Sn incorporation of up to 12% is achieved by overcoming the solid-solubility limit of Sn in Ge (1%), and high-quality n+-source/drain junctions were obtained by P implantation and subsequent FLA. Consequently, we achieved well-behaved transistor operation of the SPG-Ge0.88Sn0.12 n-MOSFETs, with an on/off current ratio one order of magnitude higher than for conventional rapid thermal annealing processing.

The aim of this study was to improve the cytocompatibility and differentiation of human bone marrow-derived mesenchymal stem cells on the surface of titanium implants by immobilizing biofunctional molecules on their surface. Gly-Arg-Gly-Asp-Ser (GRGDS) peptides, human plasma fibronectin (pFN), or type I collagen from calf skin (Col) was covalently immobilized on the titanium surfaces. Twice as many cells attached to the Col- and pFN-immobilized titanium surfaces than attached to the as-polished surface control. The ALP activity of the cells, as well as the mineralized nodule formation, was significantly higher on the Col- and pFN-immobilized titanium surfaces than on the as-polished surfaces. These results indicate that the immobilization of biofunctional molecules such as Col and pFN on titanium surfaces enhances the attachment, spreading, proliferation, and differentiation of human bone marrow-derived mesenchymal stem cells, which may lead to a more rapid bone-titanium integration.

The influence of regrown GaN on the optical properties of neutral-beam-etched (NBE) nanodisk of InGaN/GaN multiple quantum wells (MQWs) was investigated by excitation-power-dependent photoluminescence (PL) at 5 and 295 K. After regrowth of GaN, the PL peak of nanodisk at both 5 and 295 K increases to a higher energy position by about 40 meV, due to the relaxation of stress in MQWs. The internal quantum efficiency (IQE) of nanodisk after regrowth was increased by 400% 50%, depending on the excitation power. The significantly enhanced IQE and its stability over the whole range of excitation power clearly indicate a successful regrowth of GaN on the InGaN/GaN nnaodisk with a high interface quality. These results can offer considerable insight into the regrowth of GaN on NBE nanodisk towards directional micro-LED in top-down structure.

To evaluate the inhibitory effect of a surface pre-reacted glass-ionomer (S-PRG) filler-containing tooth-coating material on enamel demineralization. The outer surface of the S-PRG filler is in a state in which ions are readily released.Human enamel blocks were incubated in lactic acid solution (pH 4.0) with and without a disk (n=6) made of the cured tooth-coating material. Test solutions were changed every 24 hours and incubation was continued for 4 days. The pH and amount of fluoride released were measured with an electrode and ion meter, respectively. The concentrations of ions (aluminum, boron, calcium, phosphorus, silicon, sodium, and strontium) were measured by inductively coupled plasma atomic emission spectroscopy. The surface of the enamel block was observed with a scanning electron microscope.Enamel demineralization was not observed in an enamel block incubated with a disk of the tooth-coating material. Ions released from S-PRG filler had an acid buffering action in the low pH lactic acid solution. However, in the enamel block-only solution showing high levels of calcium ion release, the degree of demineralization was correlated with morphological changes of the enamel surface.Due to the buffering effects of the pre-reacted glass-ionomer surface by ion release, the S-PRG filler-containing tooth-coating material inhibited enamel demineralization by neutralizing the acidic environment at an early time point.

We fabricated high aspect ratio 10-nm Si nanopillar (NP) array structures with a few-tenths-nm-gap arranged by fusing biotemplate and neutral beam etching processes to investigate the wettability [e.g., contact angle (CA)] with and without surface silicon oxide film. The NP array with silicon native oxides in all gaps exhibited super-hydrophilicity due to the chemical liquid-solid interface interaction and larger surface area than the Si flat surface thanks to the NP structure. These phenomena can be explained by using the Wenzel model. In contrast, when we selectively removed the native oxide on Si NP surface with our radical treatment, a gap variation from 11 to 43 nm stably resulted in a CA of more than 96° (hydrophobicity) with a maximum of 115°. This can be explained by using the Cassie–Baxter model with a filling factor. Our findings demonstrate that controlled surface wettability can be achieved by combining our controllable gap silicon NP array structures and the surface with or without silicon native oxides. The gap of a Si NP fills with water due to the capillarity on a silicon native oxide, but on a pure stable silicon one with a defect-free surface, does not completely fill. We found that Si NP structures with controllable gaps exhibit a surface wettability ranging from super-hydrophilicity to high-hydrophobicity.

The effect of flash lamp annealing on the crystal growth of amorphous germanium-tin (GeSn) layer deposited on Ge-on-insulator wafer was investigated. It was found that the presence of Sn in the amorphous Ge significantly promoted solid-phase growth (SPG). The diffusion of Sn during the SPG of GeSn was completely suppressed owing to milli-second thermal processing, providing a high-quality GeSn layer with Sn content of 13%, which far exceeds the equilibrium solid solubility limit (∼1%). The fabricated GeSn/Ge-on-insulator wafer exhibited improved infrared absorption beyond 2000 nm, which would be a suitable platform for near-infrared image sensors based on group-IV materials.

It is well known that the high-k interpoly dielectric (IPD) layer is important for further scaling down of floating gate (FG) type flash memory to improve the gate coupling ratio [1, 2]. Therefore, the high-k Al2O3 layer has already been used as a blocking layer in the charge trapping (CT) type planar and bulk FinFET flash memories [3-5]. However, the high-k Al2O3 has not been used as an IPD layer in the FG type SOI-FinFET flash memories, to our knowledge. In this work, we introduce the high-k Al2O3 into the FG type triangular-fin (TF) and rectangular-fin (RF) channel SOI-FinFET flash memories, and investigate the effects of fin shape and IPD layer material on the electrical characteristics of the fabricated FG type SOI-FinFET flash memories. In the device fabrication, we used (100) and (110) oriented SOI wafers to fabricate TF and RF channels by using the orientation dependent wet etching [6]. A 30-nm-thick n+ poly-Si layer was used as the FG material. Figure 1 shows the cross-sectional STEM images of the fabricated FG-type SOI-FinFET flash memories with different channel shapes and different IPD layers. Figure 2 shows the P/E characteristics of the fabricated 3 kinds of SOI-FinFET flash memories at the same P/E condition. It is clear that a higher P/E speed, a larger memory window and a lower-voltage operation are achieved in the TF-ONA device as compared to the TF-ONO and RF-ONA ones. This result indicates that a high-k Al2O3 layer is very useful for enhancing memory window due to the improved gate coupling, and the TF channel is very suitable for the low-voltage operation thanks to the high-k of Al2O3 and the electric field enhancement at the sharp foot edges of a TF. [1] B. Govoreanu et al., IEDM 2006, p. 479. [2] H.-T. Lue et al., IEDM 2011, p. 203. [3] C. H. Lee et al., IEDM 2003, p. 613. [4] S.-K. Sung et al., VLSI 2006, p.106. [5] B. J. Tang et al., IEDM 2011, p. 219. [6] Y. X. Liu et al., VLSI 2010, p.101. Figure 1

We investigated the effects of the addition of chitosan fiber (biomass nanofiber made by Sugino (BiNFi-s)) to polyether-based thermoplastic polyurethane (TPU) on material properties. BiNFi-s (2 and 5 wt %)/TPU composite materials were prepared via compression molding, and glass fiber (2 and 5 wt %)/TPU composite materials and plain TPU were also prepared for comparison. The glass transition temperature was analyzed using differential scanning calorimetry, and the crystal structure was investigated using X-ray diffraction. 20-mm-long test specimens with cross-sectional dimensions of 1 mm × 1 mm were cut from sheets of the composite materials, and three-point bending tests were carried out using a universal testing machine to investigate their mechanical properties and shape memory. The addition of BiNFi-s or glass fiber to TPU did not influence the glass transition temperature, although the crystal structure changed from semi-crystalline to amorphous. The elastic modulus increased 40% by the addition of 5 wt % BiNFi-s (2.31 MPa) compared with plain TPU (1.65 MPa), and these composites exhibited shape recovery with clinically relevant changes in temperature. The addition of 5 wt % BiNFi-s into TPU resulted in an improvement in the elastic modulus without any decrease in the shape memory effect. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 105B: 1151-1156, 2017.

A nanodisk array of blue InGaN/GaN multiple quantum wells was made using neutral beam etching (NBE) followed by GaN regrowth. The NBE-fabricated nanodisk presented a vertical and highly smooth sidewall surface where the InGaN well layers were easily distinguished even with a scanning electron microscope. A high interface quality without any voids or obvious defects was obtained between the nanodisk and the regrown-GaN layer. The nanodisk after regrowth presented a smaller blueshift of photoluminescence emission energy (12 meV) and a substantially higher and almost constant internal quantum efficiency of ~50% over three orders of magnitude of excitation laser power when compared to the nanodisk before regrowth. This study shows that the process of NBE nanodisk etching followed by GaN regrowth represents a promising step forward in the development of truncated cone-shaped directional micro-LEDs with a buried active region in a top-town structure.

We demonstrated post-fin-fabrication annealing (PFA) as a recovery process for suppressing plasma-induced damage (PID) in Ge fin field-effect-transistors (FinFETs) after the Ge fin fabrication. There are two key points in the PFA process. One is an annealing temperature (≥600 °C) higher than the recrystallization temperature of Ge for the curing of PID. The other is that a SiO2 film is capped on the Ge fin to prevent GeO desorption. Furthermore, we investigated the impact of PFA at 600 °C–800 °C on the electrical characteristics of Ge FinFETs. The PFA process improves the subthreshold slope and the on current in Ge n- and p-type FinFETs and reduces the off current. We found that the optimum PFA temperature is 600 °C in this experiment because of the minimum thermal expansion between Ge and SiO2.