Kisung, Chae, Sarah F, Lombardo, Nujhat, Tasneem, Mengkun, Tian, Harish, Kumarasubramanian, Jae, Hur, Winston, Chern, Shimeng, Yu, Claudia, Richter, Patrick D, Lomenzo, Michael, Hoffmann, Uwe, Schroeder, Dina, Triyoso, Steven, Consiglio, Kanda, Tapily, Robert, Clark, Gert, Leusink, Nazanin, Bassiri-Gharb, Prab, Bandaru, Jayakanth, Ravichandran, Andrew, Kummel, Kyeongjae, Cho, Josh, Kacher, and Asif Islam, Khan
Nanoscale polycrystalline thin-film heterostructures are central to microelectronics, for example, metals used as interconnects and high-K oxides used in dynamic random-access memories (DRAMs). The polycrystalline microstructure and overall functional response therein are often dominated by the underlying substrate or layer, which, however, is poorly understood due to the difficulty of characterizing microstructural correlations at a statistically meaningful scale. Here, an automated, high-throughput method, based on the nanobeam electron diffraction technique, is introduced to investigate orientational relations and correlations between crystallinity of materials in polycrystalline heterostructures over a length scale of microns, containing several hundred individual grains. This technique is employed to perform an atomic-scale investigation of the prevalent near-coincident site epitaxy in nanocrystalline ZrO