Search

The optimal design of asymmetric quantum well structures for generation of entangled photons in the mid-infrared range by spontaneous parametric downconversion is considered, and the efficiency of this process is estimated. Calculations show that a reasonably good degree of entanglement can be obtained, and that the optical interaction length required for optimal conversion is very short, in the few μm range.

Capacitance probes are a fast, safe and relatively inexpensive means of measuring the relative permittivity of soils, which can then be used to estimate soil water content. Initial experiments with capacitance probes used empirical calibrations between the frequency response of the instrument and soil water content. This has the disadvantage that the calibrations are instrument-dependent. A twofold calibration strategy is described in this paper; the instrument frequency is turned into relative permittivity (dielectric constant) which can then be calibrated against soil water content. This approach offers the advantages of making the second calibration, from soil permittivity to soil water content. instrument-independent and allows comparison with other dielectric methods, such as time domain reflectometry. A physically based model, used to calibrate capacitance probes in terms of relative permittivity (εr) is presented. The model, which was developed from circuit analysis, predicts, successfully, the frequency response of the instrument in liquids with different relative permittivities, using only measurements in air and water. lt was used successfully to calibrate 10 prototype surface capacitance insertion probes (SCIPS) and a depth capacitance probe. The findings demonstrate that the geometric properties of the instrument electrodes were an important parameter in the model, the value of which could be fixed through measurement. The relationship between apparent soil permittivity and volumetric water content has been the subject of much research in the last 30 years. Two lines of investigation have developed, time domain reflectometry (TDR) and capacitance. Both methods claim to measure relative permittivity and should therefore be comparable. This paper demonstrates that the IH capacitance probe overestimates relative permittivity as the ionic conductivity of the medium increases. Electrically conducting ionic solutions were used to test the magnitude of this effect on the determination of relative permittivity. The response was modelled so that the relative permittivity, independent of ionic conductivity, could be determined in solutions with an electrical conductivity of up to 0.25 S m-1. It was found that a solution EC of less than 0.05 S m-1 had little impact on the permittivity measurement.

Optical feedback effects in lasers may be useful or problematic, depending on the type of application. When semiconductor lasers are operated using pulsed-mode excitation, their behavior under optical feedback depends on the electronic and thermal characteristics of the laser, as well as the nature of the external cavity. Predicting the behavior of a laser under both optical feedback and pulsed operation therefore requires a detailed model that includes laser-specific thermal and electronic characteristics. In this paper we introduce such a model for an exemplar bound-to-continuum terahertz frequency quantum cascade laser (QCL), illustrating its use in a selection of pulsed operation scenarios. Our results demonstrate significant interplay between electro-optical, thermal, and feedback phenomena, and that this interplay is key to understanding QCL behavior in pulsed applications. Further, our results suggest that for many types of QCL in interferometric applications, thermal modulation via low duty cycle pulsed operation would be an alternative to commonly used adiabatic modulation.

We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

Considerable interest exists for sensing and imaging technologies in the terahertz (THz) spectral range, in particular for the interrogation of materials of an organic or biological nature. Development in THz quantum cascade lasers is seeing higher operating temperatures and peak output powers in pulsed mode, accentuating their place as the preferred source of coherent THz frequency radiation. Technological development of interferometric sensing schemes continues to take advantage of practical improvements in THz quantum cascade lasers. In this Summary, we give a brief overview of some recent developments in this regard.

We propose a method of pinning and propagating domain walls in artificial multiferroic nanowires using electrically induced surface acoustic waves. Using finite-element micromagnetic simulations and 1D semi-analytical modelling, we demonstrate how a pair of interdigitated acoustic transducers can remotely induce an array of attractive domain wall pinning sites by forming a standing stress/strain wave along a nanowire's length. Shifts in the frequencies of the surface acoustic waves allow multiple domain walls to be synchronously transported at speeds up to 50 ms−1. Our study lays the foundation for energy-efficient domain wall devices that exploit the low propagation losses of surface acoustic waves to precisely manipulate large numbers of data bits.

Recent research shows that terahertz quantum cascade lasers are well-suited to high speed free space communication. The results of both theoretical and laboratory work indicate the devices are able to deliver bandwidths in the gigahertz to tens of gigahertz range without the burden of relaxation oscillations found in diode lasers. Using a novel rate equation model we explore the frequency response characteristics of a real device and report on the finding of a strongly peaked bias current-dependent response.

Terahertz-frequency quantum cascade lasers (THz QCLs) based on bound-to-continuum active regions are difficult to model owing to their large number of quantum states. We present a computationally efficient reduced rate equation (RE) model that reproduces the experimentally observed variation of THz power with respect to drive current and heat-sink temperature. We also present dynamic (time-domain) simulations under a range of drive currents and predict an increase in modulation bandwidth as the current approaches the peak of the light-current curve, as observed experimentally in mid-infrared QCLs. We account for temperature and bias dependence of the carrier lifetimes, gain, and injection efficiency, calculated from a full rate equation model. The temperature dependence of the simulated threshold current, emitted power, and cut-off current are thus all reproduced accurately with only one fitting parameter, the interface roughness, in the full REs. We propose that the model could therefore be used for rapid dynamical simulation of QCL designs. (C) 2015 AIP Publishing LLC

We explain the origin of voltage variations due to self-mixing in a terahertz (THz) frequency quantum cascade laser (QCL) using an extended density matrix (DM) approach. Our DM model allows calculation of both the current–voltage (I–V) and optical power characteristics of the QCL under optical feedback by changing the cavity loss, to which the gain of the active region is clamped. The variation of intra-cavity field strength necessary to achieve gain clamping, and the corresponding change in bias required to maintain a constant current density through the heterostructure is then calculated. Strong enhancement of the self-mixing voltage signal due to non-linearity of the (I–V) characteristics is predicted and confirmed experimentally in an exemplar 2.6 THz bound-to-continuum QCL.

We investigate electron transport in epitaxially-grown nitride-based resonant tunneling diodes (RTDs) and superlattice sequential tunneling devices. A density-matrix model is developed, and shown to reproduce the experimentally measured features of the current–voltage curves, with its dephasing terms calculated from semi-classical scattering rates. Lifetime broadening effects are shown to have a significant influence in the experimental data. Additionally, it is shown that the interface roughness geometry has a large effect on current magnitude, peak-to-valley ratios and misalignment features; in some cases eliminating negative differential resistance entirely in RTDs. Sequential tunneling device characteristics are dominated by a parasitic current that is most likely to be caused by dislocations, however excellent agreement between the simulated and experimentally measured tunneling current magnitude and alignment bias is demonstrated. This analysis of the effects of scattering lifetimes, contact doping and growth quality on electron transport highlights critical\ud optimization parameters for the development of III-nitride unipolar electronic and optoelectronic devices.