1. Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures
- Author
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Incandela, R.M. (author), Song, L (author), Homulle, Harald (author), Charbon-Iwasaki-Charbon, E. (author), Vladimirescu, A. (author), Sebastiano, F. (author), Incandela, R.M. (author), Song, L (author), Homulle, Harald (author), Charbon-Iwasaki-Charbon, E. (author), Vladimirescu, A. (author), and Sebastiano, F. (author)
- Abstract
Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device DC characteristics, the accuracy and validity of the compact models are demonstrated by comparing time-and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier (LNA), with the measurements at 4 K., OLD QCD/Charbon Lab, QuTech, ImPhys/Quantitative Imaging, (OLD)Applied Quantum Architectures
- Published
- 2018
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