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2. Impact of <inline-formula><tex-math notation="LaTeX">$V_\mathsf {th}$</tex-math></inline-formula> Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

6. Design Method of a High Frequency GaN-based Half-Bridge with Bottom-Side Cooled Transistors Using Multi-PCB Assembly

7. Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region

9. Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes.

10. Modelling and Minimisation of parasitic capacitances of single layer ring core choke for EMC filtering application

11. Modelling and minimization of the parasitic capacitance of ring core inductors

12. Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes.

13. Characterization and modeling of 650V GaN diodes for high frequency power conversion

14. Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes

15. Semi-Analytical Model of Parasitic Capacitance of Inductor with Conductive Core

16. Determination method of the parasitic capacitances of single layer ring core chokes made with nanocrystalline material

29. Conception et réalisation des bobines PCB à base de matériau magnétique souple pour des convertisseurs HF

30. Estimation des permittivités relatives des noyaux magnétiques pour la détermination des capacités parasites des bobines des filtres CEM

31. Méthode de caractérisation de transistors GaN pour la conception des convertisseurs statiques hautes fréquences

37. Minimisation du volume de la bobine de mode commun des filtres CEM en tenant compte de la saturation

38. Design Method for the Minimization of CM Inductor Volume with Consideration of Core Saturation in EMI Filters

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