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We here introduced a simple, but efficient, sulfur-doping method applying delta-function-like doping profiles by using near-infrared chemical-vapor deposition. The thermally decomposed sulfur was found to play the role of the n-type dopant, and hydrogen in hydrosulfide gas acted as the reducing agent corresponding to the oxygen functional groups during the growth of the graphene sheet. The doping mechanism by sulfur atoms as a substitutional impurity requires further study due to the increase in the number of unintentional defects in the crystalline graphene.