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Your search keyword '"Hooten, Nicholas C."' showing total 11 results
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11 results on '"Hooten, Nicholas C."'

2. Strong Correlation Between Experiment and Simulation for Two-Photon Absorption Induced Carrier Generation

Author

Hales, Joel M., primary, Roche, Nicolas J-H., additional, Khachatrian, Ani, additional, Mcmorrow, Dale, additional, Buchner, Stephen, additional, Warner, Jeffrey, additional, Turowski, Marek, additional, Lilja, Klas, additional, Hooten, Nicholas C., additional, Zhang, En Xia, additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2017
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3. Two-Photon Absorption Induced Single-Event Effects: Correlation Between Experiment and Simulation

Author

Hales, Joel M., primary, Roche, Nicolas J-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen, additional, Warner, Jeffrey, additional, Turowski, Marek, additional, Lilja, Klas, additional, Hooten, Nicholas C., additional, Zhang, En Xia, additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2015
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4. Effects of Energy-Deposition Variability on Soft Error Rate Prediction

Author

Weeden-Wright, Stephanie L., primary, King, Michael P., additional, Hooten, Nicholas C., additional, Bennett, William G., additional, Sierawski, Brian D., additional, Schrimpf, Ronald D., additional, Weller, Robert A., additional, Reed, Robert A., additional, Mendenhall, Marcus H., additional, Fleetwood, Daniel M., additional, Alles, Michael L., additional, and Baumann, Robert C., additional

Published
2015
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5. Single-Event Transient Response of InGaAs MOSFETs

Author

Ni, Kai, primary, Zhang, En Xia, additional, Hooten, Nicholas C., additional, Bennett, William G., additional, McCurdy, Michael W., additional, Sternberg, Andrew L., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Alles, Michael L., additional, Kim, Tae-Woo, additional, Lin, Jianqiang, additional, and del Alamo, Jesus A., additional

Published
2014
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6. Heavy-Ion and Laser Induced Charge Collection in SiGe Channel $p{\rm MOSFETs}$

Author

Zhang, En Xia, primary, Samsel, Isaak K., additional, Hooten, Nicholas C., additional, Bennett, William G., additional, Funkhouser, Erik D., additional, Ni, Kai, additional, Ball, Dennis R., additional, McCurdy, Michael W., additional, Fleetwood, Daniel M., additional, Reed, Robert A., additional, Alles, Michael L., additional, Schrimpf, Ronald D., additional, Linten, Dimitri, additional, and Mitard, Jerome, additional

Published
2014
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7. TID and Displacement Damage Resilience of 1T1R ${\rm HfO}_2/{\rm Hf}$ Resistive Memories

Author

Weeden-Wright, Stephanie L., primary, Bennett, William G., additional, Hooten, Nicholas C., additional, Zhang, En Xia, additional, McCurdy, Michael W., additional, King, Michael P., additional, Weller, Robert A., additional, Mendenhall, Marcus H., additional, Alles, Michael L., additional, Linten, Dimitri, additional, Jurczak, Malgorzata, additional, Degraeve, Robin, additional, Fantini, Andrea, additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, and Schrimpf, Ronald D., additional

Published
2014
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9. Dynamic Modeling of Radiation-Induced State Changes in \ HfO_2/\ Hf 1T1R RRAM.

Author

Bennett, William G., Hooten, Nicholas C., Schrimpf, Ronald D., Reed, Robert A., Alles, Michael L., Zhang, En Xia, Weeden-Wright, Stephanie L., Linten, Dimitri, Jurczak, Malgorzata, and Fantini, Andrea

Subjects
*DYNAMIC random access memory, *COMPUTER-aided design, *ELECTRIC potential, *COMPLEMENTARY metal oxide semiconductors, *PARTICLES, *METAL oxide semiconductor field-effect transistors
Abstract

Single and multiple-event upsets in \ HfO_2/\ Hf one transistor, one resistor (1T1R) resistive random access memory (RRAM) structures are modeled dynamically using 3-D technology computer-aided design (TCAD) simulations. A dynamic single-event compact model is presented that allows direct correlation of the ion-generated voltage transient across the RRAM and the change in RRAM resistance. Experiments and modeling demonstrate an exponential relationship between the susceptibility of the RRAM and the applied voltage. Two implementations of the model are also presented including hardening voltage-susceptible resistive memory technologies and the impact of highly scaled access transistors. [ABSTRACT FROM PUBLISHER]

Published
2014
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10. TID and Displacement Damage Resilience of 1T1R HfO_2/Hf Resistive Memories.

Author

Weeden-Wright, Stephanie L., Bennett, William G., Hooten, Nicholas C., Zhang, En Xia, McCurdy, Michael W., King, Michael P., Weller, Robert A., Mendenhall, Marcus H., Alles, Michael L., Linten, Dimitri, Jurczak, Malgorzata, Degraeve, Robin, Fantini, Andrea, Reed, Robert A., Fleetwood, Daniel M., and Schrimpf, Ronald D.

Subjects
RANDOM access memory, COMPLEMENTARY metal oxide semiconductors, OXIDES, ELECTRIC potential
Abstract

RRAM memory cells demonstrate resilience to ionizing dose and displacement damage, despite the presence of a nonhardened access transistor. Degradation in RRAM performance was not observed until large displacement damage doses and complete functionality was regained by cycling. A significant reduction in both the high and low resistance memory states and a complete collapse of the resistive window was observed for large proton fluences in RRAMs tested. Degradation in resistance states is associated with the generation of additional vacancies, which leads to (an) additional filament(s) in parallel to the existing conductive filament. Additional vacancies from displacement damage in the oxide of the resistive element do not permanently degrade device operation. The low resistance state is recovered to the pre-irradiation resistance through cycling at nominal high-speed switching conditions. Recovery of the resistive window to pre-irradiation values is obtained by applying longer write pulses which migrate remnants of radiation-induced filaments. [ABSTRACT FROM PUBLISHER]

Published
2014
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11. Heavy-Ion and Laser Induced Charge Collection in SiGe Channel pMOSFETs.

Author

Zhang, En Xia, Samsel, Isaak K., Hooten, Nicholas C., Bennett, William G., Funkhouser, Erik D., Ni, Kai, Ball, Dennis R., McCurdy, Michael W., Fleetwood, Daniel M., Reed, Robert A., Alles, Michael L., Schrimpf, Ronald D., Linten, Dimitri, and Mitard, Jerome

Subjects
HEAVY ions, LIGHT absorption, QUANTUM well devices, POLARITY (Chemistry), SILICON, COMPLEMENTARY metal oxide semiconductors
Abstract

Heavy-ion and two-photon-absorption (TPA) experiments have been performed on ultra-thin implant-free quantum well SiGe channel pMOSFETs. Both the single-event-transient pulse magnitude and polarity can depend strongly on the location of the strike along the device channel. The polarity inversion occurs primarily because very limited transient charge collection occurs below the quantum well, as confirmed by two-dimensional TCAD simulation. [ABSTRACT FROM PUBLISHER]

Published
2014
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