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The control of extrinsic and intrinsic mechanical stresses in thin films is crucial. Stresses can limit the film performance e.g. by stress-induced delamination or undesired bending of film/substrate combinations; however, stresses can also be used to obtain functionality. Thus, understanding of stress-inducing mechanisms, correlations of stress with film synthesis parameters and controlling the sign and amplitude of stresses in thin films is important and a facile and reliable stress measurement method is necessary. Here, a stress measurement chip is presented which is based on the measurement of the residual overall film stress by a film-substrate combination curvature-based measurement technique. The novel Si-based cantilever sensor chip can measure residual stress in films from a few nanometers thickness up to several microns. Moreover, the sensor chips are applicable for determining the coefficient of thermal expansion, and for examining the film thickness homogeneity over large areas in a deposition system. They can be applied in physical vapor deposition and plasma-enhanced chemical vapor deposition processes with different geometrical and process-related boundary conditions. Exemplary results which were obtained with the sensor chips are discussed to demonstrate their easy applicability, accuracy, versatility, reliability, the thickness dependence of the residual stress and the homogeneity of SiOx films as well as the residual stress and the thermal expansion values of Al-Cr-N films.

Amorphous hydrogenated carbon (a-C:H) deposited on steel with plasma enhanced chemical vapor deposition can be used as elongation tolerant oxygen barrier. However, the elongation tolerance of the a-C:H film is lost if deposited on a poly(ethylene terephthalate) (PET) for reasons unknown. To assess this phenomenon, a-C:H was deposited on PET, silicon substrates, and silicon micro-cantilevers, and the stress was determined by measuring the radius of curvature. a-C:H deposited on PET showed lower compressive stress than on silicon. This difference is not due to the formation of a gradient layer or plastic deformation of PET. Instead, the most probable explanation is that energetic ions cause a partial release of biaxial orientation within the PET, thereby reducing the compressive stress.

Atomic layer deposition (ALD) is increasingly becoming commonplace to deposit high density, conformal films, as novel deposition techniques allow improved deposition rates on various substrates. Diffusion and miscibility of ALD precursors with polymers are known to affect film nucleation. To assess the influence of polymeric underlayer on the growth and mechanical behavior of ALD films, we deposited aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on three different polymers with known reactivity to the ALD precursors and compared them to films on polyethylene terephthalate (PET). We present the trends in nucleation and penetration of the ALD films on the various polymers as well as the in situ mechanical behavior under tensile strain. X-ray photoelectron spectroscopy (XPS) revealed that Cytop, a fluorinated polymer and polyethyleneimine ethoxylated (PEIE) delay the nucleation of Al2O3 and TiO2 films. Time-of-flight mass spectrometry (ToFSIMS) shows the extent of diffusion of the ALD precursors into the polymer underlayer, delaying nucleation. Tensile tests show that while the crack onset strain remained unchanged despite the various polymer underlayers, the crack saturation density decreased for ALD films on PEIE and polyhydroxystyrene (PHOST). Films on Cytop showed no crack saturation limit until the nucleation delay was overcome indicating that judicious choice of the ALD film and polymer underlayer will allow tailoring of the length of the diffusion zone and crack saturation, but not the crack onset strain, which will be addressed in future studies.

Compared to different welding methods such as ultrasonic welding, laser transmission welding is a relatively new technology to join thermoplastic parts. The most significant advantages over other methods are the contactless energy input which can be controlled very precisely and the low mechanical loads on the welded parts. Therefore, laser transmission welding is used in various areas of application, for example in medical technology or for assembling headlights in the automotive sector. However, there are several challenges in welding dissimilar thermoplastics. This may be due to different melting points on the one hand and different polarities on the other hand. So far these problems are faced with the intermediate layer technique. In this process a layer bonding together the two components is placed between the components. This means that an additional step in the production is needed to apply the extra layer. To avoid this additional step, different ways of joining dissimilar thermoplastics are investigated. In this regard, the improvement in the weldability of the dissimilar thermoplastics polyamide 6 (PA 6) and polypropylene (PP) by means of plasma surface modification and contour welding is examined. To evaluate the influence of the plasma surface modification process on the subsequent welding process of the two dissimilar materials, the treatment time as well as the storage time between treatment and welding are varied. The treatment time in pulsed micro wave excited oxygen plasmas with an electron density of about 1x1017 m−3 is varied from 0.5 s to 120 s and the time between treatment and welding is varied from a few minutes up to a week. As reference, parts being made of the same polymer (PP and PA 6) are welded and tested. For the evaluation of the results of the welding experiments, short-time tensile tests are used to determine the bond strength. Without plasma treatment the described combination of PA 6/PP cannot be welded with sufficient bond strength to withstand handling of the samples. In contrast, the tear-out force of previously plasma treated samples can be determined to up to 1400 N. The achieved bond strengths are higher than of untreated PP/PP welded parts (about 1000 N).

The properties of plasma-enhanced chemical vapour deposition (PECVD) coatings on polymer materials depend to some extent on the surface and material properties of the substrate. Here, isotactic polypropylene (PP) substrates are coated with silicon oxide (SiO x ) films. Plasmas for the deposition of SiO x are energetic and oxidative due to the high amount of oxygen in the gas mixture. Residual stress measurements using single Si cantilever stress sensors showed that these coatings contain high compressive stress. To investigate the influence of the plasma and the coatings, residual stress, silicon organic (SiOCH) coatings with different thicknesses between the PP and the SiO x coating are used as a means to protect the substrate from the oxidative SiO x coating process. Pull-off tests are performed to analyse differences in the adhesion of these coating systems. It could be shown that the adhesion of the PECVD coatings on PP depends on the coatings' residual stress. In a PP/SiOCH/SiO x -multilayer system the residual stress can be significantly reduced by increasing the thickness of the SiOCH coating, resulting in enhanced adhesion.

The influence of ultraviolet (UV) radiation from oxygen and argon pretreatment plasmas on a plastic substrate has not been fully understood yet. In particular, its influence on the adhesion properties has not been sufficiently researched so far. This paper addresses this issue by comparing the bond strength of a plasmapolymerized silicon organic coating (SiO x C y H z ) on polypropylene (PP) after oxygen and argon plasma pretreatment and pretreatment by UV radiation emitted by the same plasmas. The UV radiation is isolated from the other species from the plasma by means of a magnesium fluoride (MgF2) optical filter. It could be shown that UV radiation originating from an oxygen plasma has a significant impact on both substrate surface chemistry and coating adhesion. The same maximum bond strength enhancement can be reached by pretreating the polypropylene surface either with pulsed oxygen plasma, or with only the UV radiation from this oxygen plasma. Also, similar surface chemistry and topography modifications are induced. For argon plasma no significant influence of its UV radiation on the substrate could be observed in this study.