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A detailed study of charge transport in the paramagnetic phase of Ho0.8Lu0.2B12 strongly correlated antiferromagnet was carried out at temperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals with different orientation of normal vectors to the lateral surface of Ho0.8Lu0.2B12 samples were investigated in order to establish the changes in Hall effect due to the anisotropy, induced by (i) the electronic phase separation (dynamic charge stripes) and (ii) formation of the disordered cage-glass state below 60 K. It was demonstrated that in magnetic fields above 40 kOe directed along the 001 and 110 axes in fcc crystals a considerable intrinsic anisotropic positive component Ranxy appears in addition to the ordinary negative Hall resistivity contribution. The relation Ranxy prop. Ranxx 1.7 was found between anomalous components of the resistivity tensor for H along 001 below 60 K, and the power law Ranxy prop. Ranxx 0.83 was detected for the orientation H along 110 at temperatures T below TS about 15 K. It is argued that below TS about 15 K the anomalous odd Ranxy(T) and even Ranxx(T) parts of the resistivity tensor may be interpreted in terms of formation of a large size clusters in the filamentary structure of fluctuating charges (stripes). We assume that these Ranxy(001) and Ranxy(110) components represent the intrinsic (Berry phase contribution) and extrinsic (skew scattering) mechanism, respectively. An additional ferromagnetic contribution to anomalous Hall effect (AHE) for both ordinary and anisotropic components in Hall signal was registered and attributed to the effect of magnetic polarization of 5d states (ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12., Comment: 46 pages including 17 figures

The model strongly correlated electron system Ho0.8Lu0.2B12 which demonstrates a cooperative Jahn-Teller instability of the boron sub-lattice in combination with rattling modes of Ho(Lu) ions, dynamic charge stripes and unusual antiferromagnetic (AF) ground state has been studied in detail at low temperatures by magnetoresistance, magnetization and heat capacity measurements. Based on received results it turns out that the angular H-fi-T magnetic phase diagrams of this non-equilibrium AF metal can be reconstructed in the form of a Maltese cross. The dramatic AF ground state symmetry lowering of this dodecaboride with fcc crystal structure can be attributed to the redistribution of conduction electrons which leave the RKKY oscillations of the electron spin density to participate in the dynamic charge stripes providing with extraordinary changes in the indirect exchange interaction between magnetic moments of Ho3+ ions and resulting in the emergence of a number of various magnetic phases. It is also shown that the two main contributions to magnetoresistance in the complex AF phase, the (i) positive linear on magnetic field and the (ii) negative quadratic component can be separated and analyzed quantitatively, correspondingly, in terms of charge carrier scattering on spin density wave (5d) component of the magnetic structure and on local 4f-5d spin fluctuations of holmium sites., Comment: 45 pages, 16 figures

Higher accuracy low temperature charge transport measurements in combination with precise X-ray diffraction experiment have allowed detecting the symmetry lowering in the single domain Tm0.19Yb0.81B12 crystals of the family of dodecaborides with metal-insulator transition. Basing on the fine structure analysis we discover formation of dynamic charge stripes within the semiconducting matrix of Tm0.19Yb0.81B12. The charge dynamics in these metallic nano-size conducting channels is characterized by broad-band optical spectroscopy that allowed estimating the frequency (~2.4 10^11 Hz) of quantum motion of the charge carriers. It is suggested that caused by cooperative Jahn-Teller effect in the boron sub-lattice, the large amplitude rattling modes of the Tm and Yb ions are responsible for modulation of the conduction band along [110] direction through the variation of 5d-2p hybridization of electron states., Comment: 15 pages, 3 figures

Magnetic properties of single crystals of Mn$_{1-x}$Fe$_x$Si solid solutions with $x < 0.2$ are investigated by pulsed field technique in magnetic fields up to 50 T. It is shown that magnetization of Mn$_{1-x}$Fe$_x$Si in the paramagnetic phase follows power law $M(B) \sim B^\alpha$ with the exponents $\alpha \sim 0.33-0.5$, which starts above characteristic fields $B_c \sim 1.5-7$ T depending on the sample composition and lasts up to highest used magnetic field. Analysis of magnetization data including SQUID measurements in magnetic fields below 5 T suggests that this anomalous behavior may be likely attributed to the formation of a field-induced Griffiths phase in the presence of spin-polaron effects., Comment: to be published in JETP Letters

Based on low temperature resistivity, heat capacity and magnetization investigations we show that the unusually strong suppression of superconductivity in Lu$_x$Zr$_{1-x}$B$_{12}$ BSC-type superconductors in the range $x$$<$0.08 is caused by the emergence of static spin polarization in the vicinity of non-magnetic lutetium impurities. The analysis of received results points to a formation of static magnetic moments with $\mu_{eff}$$\approx$$3\mu_B$ per Lu-ion. The size of these spin polarized nanodomains was estimated to be about 5 ${\AA}$., Comment: 4 pages, 6 figures

Separating between ordinary (OHE) and anomalous (AHE) Hall effect in the paramagnetic phase of Mn$_{1-x}$Fe$_{x}$Si reveals OHE sign inversion associated with the hidden quantum critical (QC) point $x^*\sim0.11$. The semimetallic behavior at intermediate Fe content leads to verifiable predictions in the field of fermiology, magnetic interactions and QC in Mn$_{1-x}$Fe$_{x}$Si. The change of electron and hole concentrations is considered as a driving force for tuning the QC regime in Mn$_{1-x}$Fe$_{x}$Si via modifying of RKKY exchange interaction within the Heisenberg model of magnetism., Comment: 5 pages, 4 figures, 1 supplement

The magnetic inhomogeneity of the A-phase in MnSi chiral magnet is identified for the first time from the precise measurements of transverse magnetoresistance (MR) anisotropy. The area inside the A-phase (A-phase core) corresponds to isotropic MR having no confinement to the MnSi crystal lattice. Per contra, the MR becomes anisotropic both on the border of the A-phase and in other magnetic phases, the strongest magnetic scattering being observed when external magnetic field applied along [001] or [00-1] directions. We argue here that the established MR features prove the presence of two different types of the skyrmion lattices inside the A-phase, and the dense skyrmion state of the A-phase core is built from individual skyrmions similar to Abrikosov-type magnetic vortexes., Comment: 5 pages, 3 figures

The magnetoresistance (MR) $\Delta \rho/\rho$ of cage-glass compound Ho$_x$Lu$_{1-x}$B$_{12}$ with various concentration of magnetic holmium ions ($x$$\leq$0.5) has been studied in detail concurrently with magnetization M(T) and Hall effect investigations on high quality single crystals at temperatures 1.9-120 K and in magnetic field up to 80 kOe. The undertaken analysis of $\Delta\rho/\rho$ allows us to conclude that the large negative magnetoresistance (nMR) observed in vicinity of Neel temperature is caused by scattering of charge carriers on magnetic clusters of Ho$^{3+}$ ions, and that these nanosize regions with AF exchange inside may be considered as short range order AF domains. It was shown that the Yosida relation $-\Delta \rho/\rho$$\sim$$M^2$ provides an adequate description of the nMR effect for the case of Langevin type behavior of magnetization. Moreover, a reduction of Ho-ion effective magnetic moments in the range 3-9$\mu_B$ was found to develop both with temperature lowering and under the increase of holmium content. A phenomenological description of the large positive quadratic contribution $\Delta \rho/\rho$$\sim$$\mu_D^2 H^2$ which dominates in Ho$_x$Lu$_{1-x}$B$_{12}$ in the intermediate temperature range 20-120 K allows to estimate the drift mobility exponential changes $\mu_D$$\sim$$T^{-a}$ with $a$=1.3-1.6 depending on Ho concentration. An even more comprehensive behavior of magnetoresistance has been found in the AF state of Ho$_x$Lu$_{1-x}$B$_{12}$ where an additional linear positive component was observed and attributed to charge carriers scattering on the spin density wave (SDW). High precision measurements of $\Delta\rho/\rho=f(H,T)$ have allowed us also to reconstruct the magnetic H-T phase diagram of Ho$_{0.5}$Lu$_{0.5}$B$_{12}$ and to resolve its magnetic structure as a superposition of 4f (based on localized moments) and 5d (based on SDW) components., Comment: 25 pages, 19 figures