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Two-dimensional transition metal dichalcogenides (TMDs) are highly appealing for gas sensors, lab-on-a-chip devices and bio-sensing applications because of their strong light-matter interaction and high surface-to-volume ratio. The ability to grow these van der Waals materials on different substrates and waveguide geometries opens a horizon toward scalable on-chip photonic nanodevices. Here, we report on a versatile technique for real time remote optical gas sensing using two-dimensional TMDs. The adsorption of the gas molecules on the monolayer surface provides a gateway for gas sensing based on charge-transfer-induced photoluminescence variation. For gases that are weakly adsorbed on the surface of monolayer TMDs, purging the monolayers' surface by an inert gas like N2 can desorb gases from the monolayers at room temperature. We demonstrate CO, NO and NO2 detection by monitoring photoluminescence from semiconducting MoS2 monolayers grown on SiO2/Si chips at a level of 10 ppm with fast response time. Observations are supported by our density functional theory calculations, which predict a significant interaction between these gases and MoS2 monolayers. These findings may lead to advances in remote sensing, surface-sensitive bioanalytics and lab-on-a-chip sensors.

The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has the potential to enable a completely new class of future electronic and optoelectronic devices. Resonant optical nanostructures emerge as promising tools for interacting with and controlling the valley degree of freedom at the nanoscale. However, a critical understanding gap remains in how nanostructures and their nearfields affect the circular polarization properties of valley-selective emission hindering further developments in this field. In order to address this issue, our study delves into the experimental investigation of a hybrid model system where valley-specific emission from a monolayer of molybdenum disulfide is interacting with a resonant plasmonic nanosphere. Contrary to the simple intuition suggesting that a centrosymmetric nanoresonator preserves the degree of circular polarization in the forward scattered farfield by angular momentum conservation, our cryogenic photoluminescence microscopy reveals that the light emitted from the nanoparticle position is largely unpolarized, i.e. we observe depolarization. We rigorously study the nature of this phenomenon numerically considering the monolayer-nanoparticle interaction at different levels including excitation and emission. In doing so, we find that the farfield degree of polarization strongly reduces in the hybrid system when including excitons emitting from outside of the system's symmetry point, which in combination with depolarisation at the excitation level causes the observed effect. Our results highlight the importance of considering spatially distributed emitters for precise predictions of polarization responses in these hybrid systems., Comment: Tobias Bucher and Zlata Fedorova contributed equally to this work. 29 pages, 6 figures

Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.

The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe$_2$-WSe$_2$ heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures., Comment: 10 pagers, 4 figures

We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO$_2$ interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO$_2$) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.

Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructures composed of ZnO nanowires and MoS2 monolayers with micrometer control over their relative position. First, we show that our deterministic fabrication method does not degrade the optical properties of the ZnO nanowires. Second, we demonstrate that the lasing wavelength of ZnO nanowires can be tuned by several nanometers by hybridization with CVD-grown MoS2 monolayers. We assign this spectral shift of the lasing modes to an efficient carrier transfer at the heterointerface and the subsequent increase of the optical band gap in ZnO (Moss-Burstein effect).

We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton-phonon coupling and enable to obtain the exciton g-factor of -3.3.

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed., Comment: Main and supplement

High-harmonic generation (HHG) in solids has been touted as a way to probe ultrafast dynamics and crystal symmetries in condensed matter systems. Here, we investigate the polarization properties of high-order harmonics generated in monolayer MoS$_2$, as a function of crystal orientation relative to the mid-infrared laser field polarization. At several different laser wavelengths we experimentally observe a prominent angular shift of the parallel-polarized odd harmonics for energies above approximately 3.5 eV, and our calculations indicate that this shift originates in subtle differences in the recombination dipole strengths involving multiple conduction bands. This observation is material specific and is in addition to the angular dependence imposed by the dynamical symmetry properties of the crystal interacting with the laser field, and may pave the way for probing the vectorial character of multi-band recombination dipoles.

Second-harmonic generation is of paramount importance in several fields of science and technology, including frequency conversion, self-referencing of frequency combs, nonlinear spectroscopy and pulse characterization. Advanced functionalities are enabled by modulation of the harmonic generation efficiency, which can be achieved with electrical or all-optical triggers. Electrical control of the harmonic generation efficiency offers large modulation depth at the cost of low switching speed, by contrast to all-optical nonlinear devices, which provide high speed and low modulation depth. Here we demonstrate all-optical modulation of second-harmonic generation in MoS2 with a modulation depth of close to 100% and speed limited only by the fundamental pulse duration. This result arises from a combination of D3h crystal symmetry and the deep subwavelength thickness of the sample, it can therefore be extended to the whole family of transition metal dichalcogenides to provide great flexibility in the design of advanced nonlinear optical devices such as high-speed integrated frequency converters, broadband autocorrelators for ultrashort pulse characterization, and tunable nanoscale holograms.

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative recombination pathways is thus of crucial importance not only for fundamental studies but also for the design of future nanoscale on-chip devices. Here, we investigate the interplay between doping and exciton-exciton annihilation (EEA) and their impact on the photoluminescence quantum yield in different TMD samples and related heterostructures. We demonstrate that the EEA threshold increases in highly doped samples, where the radiative and non-radiative recombination of trions dominates.

Silica-based optical fibers are a workhorse of nonlinear optics. They have been used to demonstrate nonlinear phenomena such as solitons and self-phase modulation. Since the introduction of the photonic crystal fiber, they have found many exciting applications, such as supercontinuum white light sources and third-harmonic generation, among others. They stand out by their low loss, large interaction length, and the ability to engineer its dispersive properties, which compensate for the small chi(3) nonlinear coefficient. However, they have one fundamental limitation: due to the amorphous nature of silica, they do not exhibit second-order nonlinearity, except for minor contributions from surfaces. Here, we demonstrate significant second-harmonic generation in functionalized optical fibers with a monolayer of highly nonlinear MoS2 deposited on the fiber guiding core. The demonstration is carried out in a 3.5 mm short piece of exposed core fiber, which was functionalized in a scalable process CVD-based process, without a manual transfer step. This approach is scalable and can be generalized to other transition metal dichalcogenides and other waveguide systems. We achieve an enhancement of more than 1000x over a reference sample of equal length. Our simple proof-of-principle demonstration does not rely on either phase matching to fundamental modes, or ordered growth of monolayer crystals, suggesting that pathways for further improvement are within reach. Our results do not just demonstrate a new path towards efficient in-fiber SHG-sources, instead, they establish a platform with a new route to chi(2)-based nonlinear fiber optics, optoelectronics, and photonics platforms, integrated optical architectures, and active fiber networks., Comment: 22 pages, 11 figures

Atomically thin transition metal dichalcogenides are highly promising for integrated optoelectronic and photonic systems due to their exciton-driven linear and nonlinear interaction with light. Integrating them into optical fibers yields novel opportunities in optical communication, remote sensing, and all-fiber optoelectronics. However, scalable and reproducible deposition of high quality monolayers on optical fibers is a challenge. Here, we report the chemical vapor deposition of monolayer MoS2 and WS2 crystals on the core of microstructured exposed core optical fibers and their interaction with the fibers' guided modes. We demonstrate two distinct application possibilities of 2D-functionalized waveguides to exemplify their potential. First, we simultaneously excite and collect excitonic 2D material photoluminescence with the fiber modes, opening a novel route to remote sensing. Then we show that third harmonic generation is modified by the highly localized nonlinear polarization of the monolayers, yielding a new avenue to tailor nonlinear optical processes in fibers. We anticipate that our results may lead to significant advances in optical fiber based technologies.

Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers, where both holes and electrons are confined to the individual layers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about $t_\perp=49$ meV. Obtaining very similar results for as-grown and artificially stacked bilayers is promising for assembling large area van der Waals structures with CVD material, using interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments., Comment: 10 pages including supplement, 3 + 4 figures

Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si wafers studied by high-resolution transmission electron microscopy (HRTEM) with high optical quality revealed in optical emission and absorption from cryogenic to ambient temperatures. We determine a defect concentration of the order of 10$^{13}$ cm$^{-2}$ for our samples with HRTEM. To have access to the intrinsic optical quality of the MLs, we remove the MLs from the SiO$_2$ growth substrate and encapsulate them in hBN flakes with low defect density, to reduce the detrimental impact of dielectric disorder. We show optical transition linewidth of 5 meV at low temperature (T=4 K) for the free excitons in emission and absorption. This is comparable to the best ML samples obtained by mechanical exfoliation of bulk material. The CVD grown MoS$_2$ ML photoluminescence is dominated by free excitons and not defects even at low temperature. High optical quality of the samples is further confirmed by the observation of excited exciton states of the Rydberg series. We optically generate valley coherence and valley polarization in our CVD grown MoS$_2$ layers, showing the possibility for studying spin and valley physics in CVD samples of large surface area., Comment: 12 pages, 3 figures, supplement

We present a novel methodology to synthesize two-dimensional (2D) lateral heterostructures of graphene and MoS2 sheets with molecular carbon nanomembranes (CNMs), which is based on electron beam induced stitching. Monolayers of graphene and MoS2 were grown by chemical vapor deposition (CVD) on copper and SiO2 substrates, respectively, transferred onto gold/mica substrates and patterned by electron beam lithography or photolithography. Self-assembled monolayers (SAMs) of aromatic thiols were grown on the gold film in the areas where the 2D materials were not present. An irradiation with a low energy electron beam was employed to convert the SAMs into CNMs and simultaneously stitching the CNM edges to the edges of graphene and MoS2, therewith forming a heterogeneous but continuous film composed of two different materials. The formed lateral heterostructures possess a high mechanical stability, enabling their transfer from the gold substrate onto target substrates and even the preparation as freestanding sheets. We characterized the individual steps of this synthesis and the structure of the final heterostructures by complementary analytical techniques including optical microscopy, Raman spectroscopy, atomic force microscopy (AFM), helium ion microscopy (HIM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) and find that they possess nearly atomically sharp boundaries.