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The effects of tensile and compressive deformation on the structural stability, electronic structure and optical properties of the Zn atom-adsorbed borophene system, which are exhibited by reflectivity, absorption coefficient, bandgap and adsorption energy, were studied using the first-principles calculations based on density functional theory (DFT). The borophene planes were found to be distorted following Zn atom adsorption. The adsorption energy calculations show that the stability decreases both under tensile and compressive strains. When tensile and compressive loading increase to 5%, respectively, the system loses the stability and the ability of adsorbing Zn atoms on borophene. The band structure and density of states analysis show that the band structure of borophene is changed by the Zn atom adsorption, with a band overlap near the Fermi level and more impurity energy levels in the conduction band. The hybridization is formed between Zn atom and borophene in the range of –12 eV to 6 eV, with the s and p orbitals both contributing to the conduction and valence bands, but p orbitals make a larger contribution to the total density of states than s orbitals. Studies of optical properties have shown that tensile and compressive strains both increase the dielectric constant of the adsorbed system, with compressive strains causing a redshift in the major peaks of the real and imaginary parts of the spectrum. The tensile strain has little effect on the absorption coefficient and reflectance of the borophene. As the compressive strain increases, the peak absorption coefficient of the adsorbed system is shifted to the blue and the peak reflectance is redshifted. [ABSTRACT FROM AUTHOR]

The effect of biaxial strain on O-doped monolayers MoS2 has been systematically studied by the first-principles calculations. It is shown that the strain decreases the structural stability of O-doped monolayer MoS2. Between 0% and 12% tensile strains, the bandgap steadily narrows. At different compression strains, the bandgap increases and then decreases. The optical properties analysis shows that the strain causes the peaks of both the real and imaginary parts of the dielectric function to appear in the low energy region. And it affects the absorption and reflection peaks of the doping system so that it has a strong absorption of photons in the ultraviolet region. The doping system shows resonance in the range of 0–10 eV. The results of this study verify that strain can properly regulate the electronic and optical properties of O-doped monolayer MoS2, and provide a theoretical reference for the implementation of MoS2 in optoelectronic devices. [ABSTRACT FROM AUTHOR]

The effect of biaxial strain on O-doped monolayers MoS2 has been systematically studied by the first-principles calculations. It is shown that the strain decreases the structural stability of O-doped monolayer MoS2. Between 0% and 12% tensile strains, the bandgap steadily narrows. At different compression strains, the bandgap increases and then decreases. The optical properties analysis shows that the strain causes the peaks of both the real and imaginary parts of the dielectric function to appear in the low energy region. And it affects the absorption and reflection peaks of the doping system so that it has a strong absorption of photons in the ultraviolet region. The doping system shows resonance in the range of 0–10 eV. The results of this study verify that strain can properly regulate the electronic and optical properties of O-doped monolayer MoS2, and provide a theoretical reference for the implementation of MoS2 in optoelectronic devices. [ABSTRACT FROM AUTHOR]

A study published in the journal iMeta examines the role of beneficial microbes in protecting rice plants from fungal pathogens. The researchers found that certain microbes in the rice plants' microbiome can directly suppress fungal infections. They created a simplified community of three beneficial bacteria, which was shown to enhance rice resistance against fungal pathogens in both lab and field conditions. The study suggests that these beneficial microbes could be used as biocontrol agents to improve rice productivity and manage plant diseases in a cost-effective way. [Extracted from the article]

A first-principles method was used to explore the influence of tensile strain on the electrical and optical characteristics of Nb-doped MoSe2. The tensile strain has been discovered to have a higher influence on the electrical structure of the Nb-doped MoSe2 system than pure monolayer MoSe2. According to the energy band structure study, the pure monolayer MoSe2 is a direct bandgap semiconductor, but the system doped with Nb instead of Mo atoms is a p-type-doped semiconductor. The bandgap of the Nb-doped MoSe2 system decreases gradually with the increase of tensile strain, but still maintains the p-type semiconductor properties, and the bandgap of the pure monolayer MoSe2 also decreases gradually with the increase of tensile strain. From the density of states analysis, it is found that for the total density of states of the doped system at different tensile strains, it is mainly contributed by the Mo-4d and Se-4p orbitals. The optical properties analysis showed that the doped system under tensile strain had higher absorption coefficient and reflectance peak than the Nb-doped MoSe2 system without tensile strain. Additionally, the doped system showed redshift phenomenon in both the absorption and reflection peaks as the tensile strain increased. [ABSTRACT FROM AUTHOR]

The influence of shear deformation on the electronic and optical properties of the Al-doped arsenene has been investigated using the first-nature principle based on density general function theory. Within this study, the 5.882% doping concentration in the Al-doped arsenene makes it reasonably stable and the doping of Al atoms causes the arsenene to exhibit quasi-metallic properties. The combined energy calculations show that the structural stability of the Al-doped arsenene is not significantly affected by shear deformation. With increased shear deformation, the band gap of intrinsic arsenene reduces, and the band gap of the Al-doped arsenene similarly does. Optical properties analysis indicates that shear deformation redshifts both the absorption and reflection peaks of the doped system. [ABSTRACT FROM AUTHOR]

Summary: The plant rapid alkalinization factor (RALF) peptides function as key regulators in cell growth and immune responses through the receptor kinase FERONIA (FER). In this study, we report that the transcription factor FgPacC binds directly to the promoter of FgRALF gene, which encodes a functional homologue of the plant RALF peptides from the wheat head blight fungus Fusarium graminearum (FgRALF). More importantly, FgPacC promotes fungal infection via host immune suppression by activating the expression of FgRALF. The FgRALF peptide also exhibited typical activities of plant RALF functions, such as inducing plant alkalinization and inhibiting cell growth, including wheat (Triticum aestivum), tomato (Solanum lycopersicum) and Arabidopsis thaliana. We further identified the wheat receptor kinase FERONIA (TaFER), which is capable of restoring the defects of the A. thaliana FER mutant. In addition, we found that FgRALF peptide binds to the extracellular malectin‐like domain (ECD) of TaFER (TaFERECD) to suppress the PAMP‐triggered immunity (PTI) and cell growth. Overexpression of TaFERECD in A. thaliana confers plant resistance to F. graminearum and protects from FgRALF‐induced cell growth inhibition. Collectively, our results demonstrate that the fungal pathogen‐secreted RALF mimic suppresses host immunity and inhibits cell growth via plant FER receptor. This establishes a novel pathway for the development of disease‐resistant crops in the future without compromising their yield potential. [ABSTRACT FROM AUTHOR]

The electronic and optical properties of hydrogenated silicene at different torsion angles are investigated using the density functional theory (DFT). It was found that when silicene was hydrogenated, the Si atoms were pulled out of plane due to covalent interactions between the Si and H atoms, increasing their flexural height to 0.731 Å. Torsional deformation decreases the structural stability of hydrogenated silicene and its adsorption energy decreases with increasing twist angle. Under the effect of torsion deformation, the bandgap of hydrogenated silicene increases and then decreases. The bandgap is 2.168 eV at a torsion angle of 0∘, indicating a wide bandgap semiconductor. Mulliken's charge population analysis shows that charge transfer occurs between Si–H atoms, with Si atoms losing electrons and becoming positively charged and H atoms gaining electrons and becoming negatively charged. From the analysis of optical properties, the torsional deformation induced the maximum absorption and reflection peaks of all the hydrogenated silicene systems to appear in the ultraviolet region. Compared with the system without torsional deformation, these peaks exhibit varying degrees of red and blue shifts. The above findings provide guidance for the application of silicene in nanooptoelectronic devices. [ABSTRACT FROM AUTHOR]

Context: In this paper, the electronic and optical properties of Cr-doped monolayer MoS2 under uniaxial tensile strain are investigated by first-principle calculations. It is shown that uniaxial tensile strain can significantly change the electronic and optical properties of Cr-doped monolayer MoS2, and the bandgap value of the intrinsic MoS2 system gradually decreases with the increase of tensile strain, while the bandgap value of the Cr-doped MoS2 system is relatively stable. However, when the stretching reaches a certain degree, both the intrinsic and doped systems become metallic. From the analysis of the density of states, it is found that new electronic states and energy levels appear in the intrinsic MoS2 system and all Cr-doped monolayer MoS2 systems with the increase of the tensile strain, but the changes in the density of states diagrams of the Cr-doped monolayer MoS2 system are relatively small, which is mainly attributed to the effect of the Cr-doped atoms. The analysis of optical properties displays that the stretched doped system differs from the intrinsic MoS2 system in terms of dielectric function, absorption and reflection, energy loss function, and refractive index. Our results suggest that uniaxial tensile strain can be used as an effective means to modulate the electronic structure and optical properties of Cr-doped monolayer MoS2. These findings provide a theoretical basis for understanding the optoelectronic properties of MoS2 and its doped systems as well as their applications in optoelectronic devices. Methods: Based on the first principle of density functional theory framework and the CASTEP module in Materials Studio software (Perdew et al. in Phys Rev Lett 77(18):3865–3868, 1996). The structure of Cr atom-doped MoS2 systems and MoS2 systems were optimized using the generalized gradient approximation plane-wave pseudopotential method (GGA) and Perdew-Burke-Ernzerhof (PBE) generalized functions under 3%, 6%, and 9% tensile deformation, and the corresponding formation energy, bond length, electronic structure, and optical properties of the models were analyzed. The Grimme (J Comput Chem 27(15):1787–1799, 2006) vdW correction with 400 eV cutoff was used in Perdew-Burke-Ernzerhof (PBE) functional to optimize the geometry until the forces and energy converged to 0.02 eV/Å and 1.0e-5eV/atom, respectively. For each model structure optimization, the K-point grid was assumed to be 4×4×1, using the Monkhorst-Pack special K-point sampling method. After the MoS2 supercell convergence test, the plane-wave truncation energy was chosen to be 400 eV. Following geometric optimization, the iterative accuracy converged to no less than 1.0×10−5 eV/atom for total atomic energy and less than 0.02 eV/Å for all atomic forces. We created a vacuum layer of 18 Å along the Z-axis to prevent the impact of periodic boundary conditions and weak van der Waals forces between layers on the monolayer MoS2. In this paper, a total of 27 atoms were used for the 3×3×1 supercell MoS2 system, which consists of 18 S atoms and 9 Mo atoms. [ABSTRACT FROM AUTHOR]

Plants cannot avoid environmental challenges and are constantly threatened by diverse biotic and abiotic stresses. However, plants have developed a unique immune system to defend themselves against the invasion of various pathogens. Melatonin, N‐acetyl‐5‐methoxytryptamine has positive physiological effects in plants that are involved in disease resistance. The processes underlying melatonin‐induced pathogen resistance in plants are still unknown. The current study explores how melatonin regulates the plant‐disease interaction in maize. The results showed that 400 μM melatonin strongly reduced the disease lesion on maize stalks by 1.5 cm and corn by 4.0 cm caused by Fusarium graminearum PH‐1. Furthermore, after treatment with melatonin, the plant defense enzymes like SOD significantly increased, while POD and APX significantly decreased compared to the control. In addition, melatonin can also improve maize's innate immunity, which is mediated by melatonin treatments through the salicylic acid signaling pathway, and up‐regulate the defense‐associated expression of PR1, LOX1, OXR, serPIN, and WIPI genes in maize. Melatonin not only inhibits the disease in the maize stalks and corn, but also down‐regulates the deoxynivalenol (DON) production‐related expression of genes Tri1, Tri4, Tri5, and Tri6 in maize. Overall, this study sheds new light on the mechanisms by which melatonin regulates antioxidant enzymes and defense‐related genes involved in plant immunity to effectively suppress plant diseases. [ABSTRACT FROM AUTHOR]