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Abstract The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions and each device realisation requires a different tuning protocol. We demonstrate that it is possible to automate the tuning of a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate Ge/SiGe heterostructure double quantum dot device from scratch with the same algorithm. We achieve tuning times of 30, 10, and 92 min, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices, allowing for the characterization of the regions where double quantum dot regimes are found. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.

We have developed a non-local architecture for spin current injection, manipulation, and detection in n-doped bulk Si at room temperature. Spins are locally generated at the indirect gap of bulk Si by means of circularly polarized light and then detected by exploiting the inverse spin-Hall effect (ISHE) occurring inside a thin Pt pad deposited at the top of the Si substrate. We demonstrate that it is possible to modulate the transport properties of the optically injected spin current by applying a bias voltage along the direction of motion of the particles. In this case, we are able to explore both the spin diffusion regime, characterized by a spin diffusion length Ls ≈ 12 μm, and the spin drift regime with applied electric fields up to E = 35 V/cm. We demonstrate that the spin transport length of the electrons can be increased (or decreased) by more than 100% for electric fields antiparallel (or parallel) to the diffusion direction. As a consequence, the ISHE signal can be electrically controlled to have high or low output voltages from the non-local device.

The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform.

We have investigated the electron spin diffusion length at room temperature in bulk n-doped germanium as a function of the doping concentration. To this purpose, we exploit a nonlocal spin injection/detection scheme where spins are optically injected at the direct gap of Ge and electrically detected by means of the inverse spin-Hall effect (ISHE). By optically generating a spin population in the conduction band of the semiconductor at different distances from the spin detector, we are able to directly determine the electron spin diffusion length Ls in the Ge substrate. We experimentally observe that Ls > 20 μm for lightly doped samples and, by taking into account the electron diffusion coefficient, we estimate electron spin lifetime values τs larger than 50 ns. In contrast, for heavily doped Ge substrates, the spin diffusion length decreases to a few micrometers, corresponding to τs ≈ 20 ns. These results can be exploited to refine spin transport models in germanium and reduce the experimental uncertainties associated with the evaluation of Ls from other spin injection/detection techniques.

Topological insulators (TIs) like Bi2Se3 are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi2Se3 thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to the electron spin such as a spin diffusion length of several micrometers at room temperature. By growing Bi2Se3 on germanium, we aim at combining the long spin diffusion length of Ge with the spin-momentum locking at the surface of Bi2Se3. We first performed a thorough structural analysis of Bi2Se3 films using electron and x-ray diffraction as well as atomic force microscopy. Then, magnetotransport measurements at low temperature showed the signature of weak antilocalization as a result of two-dimensional transport in the presence of spin-orbit coupling. We interpret our results as the signature of magnetotransport in a single strongly coupled coherent channel in the presence of surface to bulk scattering. Interestingly, the magnetotransport measurements also point out that the conduction channel can be tuned between the Bi2Se3 film and the Ge layer underneath by means of the bias voltage or the applied magnetic field. This result suggests that the Bi2Se3/Ge junction is a promising candidate for tuning spin-related phenomena at interfaces between TIs and semiconductors.

We perform photoinduced inverse spin-Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons are photogenerated at the Γ point of the Ge Brillouin zone using circularly-polarized light. After the ultrafast Γ−L scattering in the Ge conduction band, which partially preserves the spin polarization, electrons diffuse into the Pt layer where spin-dependent scattering with Pt nuclei yields a transverse electromotive field EISHE. The ISHE signal dependence as a function of the incident photon energy is investigated and interpreted in the frame of a one-dimensional spin drift-diffusion model. This allows estimating the electron spin lifetime at the L-valleys to be τs=1 ns.

High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm−3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm−3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved. [ABSTRACT FROM AUTHOR]

Highly scaled nanoelectronics requires effective channel doping above 5 × 1019 cm−3 together with ohmic contacts with extremely low specific contact resistivity. Nowadays, Ge becomes very attractive for modern optoelectronics due to the high carrier mobility and the quasi-direct bandgap, but n-type Ge doped above 5 × 1019 cm−3 is metastable and thus difficult to be achieved. In this letter, we report on the formation of low-resistivity ohmic contacts in highly n-type doped Ge via non-equilibrium thermal processing consisting of millisecond-range flash lamp annealing. This is a single-step process that allows for the formation of a 90 nm thick NiGe layer with a very sharp interface between NiGe and Ge. The measured carrier concentration in Ge is above 9 × 1019 cm−3 with a specific contact resistivity of 1.2 × 10−6 Ω cm2. Simultaneously, both the diffusion and the electrical deactivation of P are fully suppressed. [ABSTRACT FROM AUTHOR]

In this work we address three-dimensional heterojunctions, demonstrating that photoluminescence from defect-free, Ge/SiGe multiple quantum well (MQW) micro-crystals grown on deeply patterned Si(001) and Si(111) substrates exhibit similar radiative intensity and analogous spectral shape. The finite lateral size and faceted top morphology of the micro-crystals guarantee the absence of dislocations threading through the MQW structure and the dominance of radiative recombination at slanted facets. Our approach yields superior optical quality in comparison to state-of-the-art MQWs grown on SiGe/Si(001) linearly graded buffers. [ABSTRACT FROM AUTHOR]

Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as front-runners for future hole-based quantum processors. Here, we present strong coupling between a hole charge qubit, defined in a double quantum dot (DQD) in planar Ge, and microwave photons in a high-impedance (Z r  = 1.3 kΩ) resonator based on an array of superconducting quantum interference devices (SQUIDs). Our investigation reveals vacuum-Rabi splittings with coupling strengths up to g 0 /2π = 260 MHz, and a cooperativity of C ~ 100, dependent on DQD tuning. Furthermore, utilizing the frequency tunability of our resonator, we explore the quenched energy splitting associated with strong Coulomb correlation effects in Ge QDs. The observed enhanced coherence of the strongly correlated excited state signals the presence of distinct symmetries within related spin functions, serving as a precursor to the strong coupling between photons and spin-charge hybrid qubits in planar Ge. This work paves the way towards coherent quantum connections between remote hole qubits in planar Ge, required to scale up hole-based quantum processors., Competing Interests: Competing interests: The authors declare no competing interests., (© 2024. The Author(s).)

Waste material classification is critical for efficient recycling and waste management. This study proposes a novel, low-cost material classification system based on a single, voltage-tunable Ge-on-Si photodetector operating across the visible and short-wave infrared (SWIR) spectral regions. Thanks to its tunability, the sensor is able to extract spectral information, and the system effectively distinguishes between seven different materials, including plastics, aluminum, glass, and paper. The system operates with a broadband illuminator, and material identification is obtained through the processing of the photocurrent signal at different bias voltages with classification algorithms. Here, we demonstrate the basic system functionality and near real-time classification of different waste materials.

Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junction is then integrated into an Xmon circuit and capacitively coupled to a transmission line resonator. We showcase the qubit tunability in a broad frequency range with resonator and two-tone spectroscopy. Time-domain characterizations reveal energy relaxation and coherence times up to 75 ns. Our results, combined with the recent advances in the spin qubit field, pave the way towards novel hybrid and protected qubits in a group IV, CMOS-compatible material., (© 2024. The Author(s).)

The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions and each device realisation requires a different tuning protocol. We demonstrate that it is possible to automate the tuning of a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate Ge/SiGe heterostructure double quantum dot device from scratch with the same algorithm. We achieve tuning times of 30, 10, and 92 min, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices, allowing for the characterization of the regions where double quantum dot regimes are found. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning., (© 2024. The Author(s).)

Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a [Formula: see text] CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with ≈ 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on  the same silicon technology compatible platform., (© 2024. The Author(s).)

Spectroscopy in the mid-infrared (mid-IR) wavelength range is a key technique to detect and identify chemical and biological substances. In this context, the development of integrated optics systems paves the way for the realization of compact and cost-effective sensing systems. Among the required devices, an integrated electro-optical modulator (EOM) is a key element for advanced sensing circuits exploiting dual comb spectroscopy. In this paper, we have experimentally demonstrated an integrated EOM operating in a wide wavelength range, i.e. from 5 to 9 µm at radio frequency (RF) as high as 1 GHz. The modulator exploits the variation of free carrier absorption in a Schottky diode embedded in a graded silicon germanium (SiGe) photonic waveguide.

A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface., (© 2022. The Author(s).)

The spin-orbit interaction permits to control the state of a spin qubit via electric fields. For holes it is particularly strong, allowing for fast all electrical qubit manipulation, and yet an in-depth understanding of this interaction in hole systems is missing. Here we investigate, experimentally and theoretically, the effect of the cubic Rashba spin-orbit interaction on the mixing of the spin states by studying singlet-triplet oscillations in a planar Ge hole double quantum dot. Landau-Zener sweeps at different magnetic field directions allow us to disentangle the effects of the spin-orbit induced spin-flip term from those caused by strongly site-dependent and anisotropic quantum dot g tensors. Our work, therefore, provides new insights into the hole spin-orbit interaction, necessary for optimizing future qubit experiments.

The development of three-dimensional architectures in semiconductor technology is paving the way to new device concepts for various applications, from quantum computing to single photon avalanche detectors. In most cases, such structures are achievable only under far-from-equilibrium growth conditions. Controlling the shape and morphology of the growing structures, to meet the strict requirements for an application, is far more complex than in close-to-equilibrium cases. The development of predictive simulation tools can be essential to guide the experiments. A versatile phase-field model for kinetic crystal growth is presented and applied to the prototypical case of Ge/Si vertical microcrystals grown on deeply patterned Si substrates. These structures, under development for innovative optoelectronic applications, are characterized by a complex three-dimensional set of facets essentially driven by facet competition. First, the parameters describing the kinetics on the surface of Si and Ge are fitted on a small set of experimental results. To this goal, Si vertical microcrystals have been grown, while for Ge the fitting parameters have been obtained from data from the literature. Once calibrated, the predictive capabilities of the model are demonstrated and exploited for investigating new pattern geometries and crystal morphologies, offering a guideline for the design of new 3D heterostructures. The reported methodology is intended to be a general approach for investigating faceted growth under far-from-equilibrium conditions., (© 2021. The Author(s).)

Ultraviolet-C (UV-C) radiation exposure is an attractive option for rapid and consistent disinfection of interior surfaces in aircraft cabins. In this study, fabric and plastic materials commonly used in aircraft cabins were exposed to UV-C radiation to determine their sensitivity to cumulative damage from frequent application. No significant effect on flame retardancy occurred up to 269 J/cm2 dose, and no effect on tensile or tear strength occurred up to 191 J/cm2 . Changes in color or appearance can occur at lower doses. A limit of 40 J/cm2 is proposed to avoid perceptible changes in appearance.

Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits are particularly interesting owing to their ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here, we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 μs, which we extend beyond 150 μs using echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the-art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are comparable with those of Ge single spin qubits, but singlet-triplet qubits can be operated at much lower fields, emphasizing their potential for on-chip integration with superconducting technologies., (© 2021. The Author(s), under exclusive licence to Springer Nature Limited.)

We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO 2 /Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron microscopy. These characterizations show that the amorphous Ge films dewet into Ge crystalline nano-islands with dynamics dominated by crystallization of the amorphous material into crystalline nano-seeds and material transport at Ge islands. Surface energy minimization determines the dewetting process of crystalline Ge and controls the final stages of the process. At very high temperatures, coarsening of the island size distribution is observed.

Midinfrared spectroscopy is a universal way to identify chemical and biological substances. Indeed, when interacting with a light beam, most molecules are responsible for absorption at specific wavelengths in the mid-IR spectrum, allowing to detect and quantify small traces of substances. On-chip broadband light sources in the mid-infrared are thus of significant interest for compact sensing devices. In that regard, supercontinuum generation offers a mean to efficiently perform coherent light conversion over an ultrawide spectral range, in a single and compact device. This work reports the experimental demonstration of on-chip two-octave supercontinuum generation in the mid-infrared wavelength, ranging from 3 to 13 μm (that is larger than 2500 cm -1 ) and covering almost the full transparency window of germanium. Such an ultrawide spectrum is achieved thanks to the unique features of Ge-rich graded SiGe waveguides, which allow second-order dispersion tailoring and low propagation losses over a wide wavelength range. The influence of the pump wavelength and power on the supercontinuum spectra has been studied. A good agreement between the numerical simulations and the experimental results is reported. Furthermore, a very high coherence is predicted in the entire spectrum. These results pave the way for wideband, coherent, and compact mid-infrared light sources by using a single device and compatible with large-scale fabrication processes., Competing Interests: The authors declare no competing financial interest., (© 2020 American Chemical Society.)

We investigate light-matter interactions in periodic silicon microcrystals fabricated combining top-down and bottom-up strategies. The morphology of the microcrystals, their periodic arrangement, and their high refractive index allow the exploration of photonic effects in microstructured architectures. We observe a notable decrease in reflectivity above the silicon bandgap from the ultraviolet to the near-infrared. Finite-difference time-domain simulations show that this phenomenon is accompanied by a ∼2-fold absorption enhancement with respect to a flat sample. Finally, we demonstrate that ordered silicon microstructures enable a fine tuning of the light absorption by changing experimentally accessible knobs as pattern and growth parameters. This work will facilitate the implementation of optoelectronic devices based on high-density microcrystals arrays with optimized light-matter interactions.

A novel spectroscopy technique to enable the rapid characterization of discrete mid-infrared integrated photonic waveguides is demonstrated. The technique utilizes lithography patterned polymer blocks that absorb light strongly within the molecular fingerprint region. These act as integrated waveguide detectors when combined with an atomic force microscope that measures the photothermal expansion when infrared light is guided to the block. As a proof of concept, the technique is used to experimentally characterize propagation loss and grating coupler response of Ge-on-Si waveguides at wavelengths from 6 to 10 µm. In addition, when the microscope is operated in scanning mode at fixed wavelength, the guided mode exiting the output facet is imaged with a lateral resolution better than 500 nm i.e. below the diffraction limit. The characterization technique can be applied to any mid-infrared waveguide platform and can provide non-destructive in-situ testing of discrete waveguide components.

We present an experimental and theoretical analysis of the formation of nanovoids within Si microcrystals epitaxially grown on Si patterned substrates. The growth conditions leading to the nucleation of nanovoids have been highlighted, and the roles played by the deposition rate, substrate temperature, and substrate pattern geometry are identified. By combining various scanning and transmission electron microscopy techniques, it has been possible to link the appearance pits of a few hundred nanometer width at the microcrystal surface with the formation of nanovoids within the crystal volume. A phase-field model, including surface diffusion and the flux of incoming material with shadowing effects, reproduces the qualitative features of the nanovoid formation thereby opening new perspectives for the bottom-up fabrication of 3D semiconductors microstructures., Competing Interests: The authors declare no competing financial interest.

The mid-infrared (mid-IR) wavelength range hosts unique vibrational and rotational resonances of a broad variety of substances that can be used to unambiguously detect the molecular composition in a non-intrusive way. Mid-IR photonic-integrated circuits (PICs) are thus expected to have a major impact in many applications. Still, new challenges are posed by the large spectral width required to simultaneously identify many substances using the same photonic circuit. Ge-rich graded SiGe waveguides have been proposed as a broadband platform approach for mid-IR PICs. In this work, ultra-broadband waveguides are experimentally demonstrated within unprecedented wavelength range, efficiently guiding light from 5 to 11 µm. Interestingly, losses from 0.5 to 1.2 dB/cm are obtained between 5.1 and 8 µm wavelength, and values below 3 dB/cm are measured from 9.5 to 11.2 µm wavelength. An increase of propagation losses is seen between 8 and 9.5 µm; however, values stay below 4.6 dB/cm in the entire wavelength range. A detailed analysis of propagation losses is reported, supported by secondary ion mass spectrometry measurement, and different contributions are analyzed: silicon substrate absorption, oxygen impurities, free carrier absorption by residual doping, sidewall roughness and multiphonon absorption. Finally, Mach-Zehnder interferometers are characterized, and wideband operation is experimentally obtained from 5.5 to 10.5 µm wavelength.

Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term that is linear in current density j and magnetic field B, hence, odd in j and B, corresponding to a unidirectional magnetoresistance. At 15 K, for I=10  μA (or j=0.33  A m^{-1}) and B=1  T, it represents 0.5% of the zero field resistance, a much higher value compared to previous reports on unidirectional magnetoresistance (UMR). We ascribe the origin of this magnetoresistance to the interplay between the externally applied magnetic field and the pseudomagnetic field generated by the current applied in the spin-splitted subsurface states of Ge(111). This unidirectional magnetoresistance is independent of the current direction with respect to the Ge crystal axes. It progressively vanishes, either using a negative gate voltage due to carrier activation into the bulk (without spin-splitted bands), or by increasing the temperature due to the Rashba energy splitting of the subsurface states lower than ∼58k_{B}. We believe that UMR could be used as a powerful probe of the spin-orbit interaction in a wide range of materials.

We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

Miniaturized optical spectrometers providing broadband operation and fine resolution have an immense potential for applications in remote sensing, non-invasive medical diagnostics and astronomy. Indeed, optical spectrometers working in the mid-infrared spectral range have garnered a great interest for their singular capability to monitor the main absorption fingerprints of a wide range of chemical and biological substances. Fourier-transform spectrometers (FTS) are a particularly interesting solution for the on-chip integration due to their superior robustness against fabrication imperfections. However, the performance of current on-chip FTS implementations is limited by tradeoffs in bandwidth and resolution. Here, we propose a new FTS approach that gathers the advantages of spatial heterodyning and optical path tuning by thermo-optic effect to overcome this tradeoff. The high resolution is provided by spatial multiplexing among different interferometers with increasing imbalance length, while the broadband operation is enabled by fine tuning of the optical path delay in each interferometer harnessing the thermo-optic effect. Capitalizing on this concept, we experimentally demonstrate a mid-infrared SiGe FTS, with a resolution better than 15 cm -1 and a bandwidth of 603 cm -1 near 7.7 μm wavelength with a 10 MZI array. This is a resolution comparable to state-of-the-art on-chip mid-infrared spectrometers with a 4-fold bandwidth increase with a footprint divided by a factor two.

We demonstrate the use of plasmonic effects to boost the near-infrared sensitivity of metal-semiconductor-metal detectors. Plasmon-enhanced photodetection is achieved by properly optimizing Au interdigitated electrodes, micro-fabricated on Ge, a semiconductor that features a strong near IR absorption. Finite-difference time-domain simulations, photocurrent experiments and Fourier-transform IR spectroscopy are performed to validate how a relatively simple tuning of the contact geometry allows for an enhancement of the response of the device adapting it to the specific detection needs. A 2-fold gain factor in the Ge absorption characteristics is experimentally demonstrated at 1.4 µm, highlighting the potential of this approach for optoelectronic and sensing applications.

This paper presents a comprehensive investigation of an extended method to determine composition of materials by scanning transmission electron microscopy (STEM) high angle annular darkfield (HAADF) images and using complementary multislice simulations. The main point is to understand the theoretical capabilities of the algorithm and address the intrinsic limitations of using STEM HAADF intensities for composition determination. A special focus is the potential of the method regarding single-atom accuracy. All-important experimental parameters are included into the multislice simulations to ensure the best possible fit between simulation and experiment. To demonstrate the capabilities of the extended method, results for three different technical important semiconductor samples are presented. Overall the method shows a high lateral resolution combined with a high accuracy towards single-atom accuracy., (Copyright © 2019. Published by Elsevier B.V.)