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Transistor-based sensors have been widely recognized to be highly sensitive and reliable for point-of-care/bed-side diagnosis. In this line, a range of cutting-edge technologies has been generated to elevate the role of transistors for biomolecule detection. Detection of a wide range of clinical biomarkers has been reported using various configurations of transistors. The inordinate sensitivity of transistors to the field-effect imparts high sensitivity toward wide range of biomolecules. This overview has gleaned the present achievements with the technological advancements using high performance transistor-based sensors. This review encloses transistors incorporated with a variety of functional nanomaterials and organic elements for their excellence in selectivity and sensitivity. In addition, the technological advancements in fabrication of these microdevices or nanodevices and functionalization of the sensing elements have also been discussed. The technological gap in the realization of sensors in transistor platforms and the resulted scope for research has been discussed. Finally, foreseen technological advancements and future research perspectives are described. [ABSTRACT FROM AUTHOR]

Programmability, fundamental to the computing of electronic systems, is traditionally achieved in processing and memory modules. Recently, the emergence of in‐sensor computing allows the programmability of the sensing modules and the process of raw data upon the sensor edge, which reduces data transport and energy consumption. Here, a programmable photodetector module with a tunable photoelectric response based on molybdenum sulfide (MoS2) metal‐oxide‐semiconductor (MOS) junction for visible detection is reported. The sensor takes advantage of the tunable band alignment at the MOS junction and generates an adjustable or even reversible out‐of‐plane photovoltaic effect with high efficiency. This work provides new device configurations to architect the programmability of the photodetectors, and pave the way toward in‐sensor computing at the application edge. [ABSTRACT FROM AUTHOR]

Currently, the power conversion efficiency (PCE) of inverted perovskite solar cells (PSCs) is still limited by reduced open-circuit voltage (V OC ), due to defect-induced charge recombination. Most studies focus on defect passivation and improving carrier transport through introducing passivating molecules or macroscopic physical fields. Herein, to mitigate energy level mismatch and recombination losses induced by interface defects, an interface electric-field passivation is introduced, employing the ordered arrangement of the dipole molecule benzenesulfonyl chloride (BC). An enhanced V OC is achieved without the introduction of an external physical field, owing to the interfacial dipole field effect and chemical passivation by BC. Subsequently, an inverted device with a PCE of 25.41% is obtained, alongside exceptional stability, retaining 95% of the initial efficiency after 1157 h. This work demonstrates the effective dipole-induced interfacial field-effect passivation in inverted PSCs and contributes to further advancements in the efficiency and stability of inverted devices., (© 2024 Wiley‐VCH GmbH.)

Impedance spectroscopy is an electrochemical technique widely used for the electrical characterization of the behavior of biomaterials in all kinds of biosensors. Field‐effect devices, and in particular ion‐sensitive field‐effect transistors (ISFETs), have been extensively studied as transducers for biosensing. They however have not been much analyzed with impedance spectroscopy, because they typically generate non‐Faradaic capacitance measurements, since there is no charge transfer through the insulating gate in contact with the liquid solution. We have recently experimentally shown that Faradaic‐like impedance spectroscopy spectra can be obtained with ISFET devices, allowing high‐sensitivity measurements for different pH and biomarker concentrations. In this paper, we report that both Faradaic‐like and non‐Faradaic impedance behavior can be well understood by a DC and small‐signal AC model of the ISFET working in different conditions. Faradaic‐like impedance measurements are described by the operation of the ISFET in subthreshold conditions. A Nyquist plot semicircle is obtained, corresponding to the transimpedance 1/gm of the ISFET in parallel to the gate capacitances. We show that this behavior is independent of the presence of membrane material on the gate surface. In these conditions, the change in the semicircle diameter for different pH or biomarker concentrations can be understood by the change of 1/gm corresponding to a threshold voltage shift of the transistor. This description is illustrated with our recent results for pH measurements and the detection of tumor necrosis factor‐α with functionalized devices in standard solutions in the concentration range of 1–20 pg/ml. The use of the impedance spectroscopy technique takes advantage of the exponential behavior of the gm(VGS) curves in the subthreshold (weak inversion) operation of the ISFET. This results in a large signal amplification, where a small change in the threshold voltage results in a large change in the impedance spectrum, thus achieving an increased precision in the measurement of the device response to changes in the analyte concentration. [ABSTRACT FROM AUTHOR]

The concept of tumor field effect implies that cancer is a systemic disease with its impact way beyond the visible tumor confines. For instance, in Glioblastoma (GBM), an aggressive brain tumor, the increase in intracranial pressure due to tumor burden often leads to brain herniation and poor outcomes. Our work is based on the rationale that highly aggressive tumors tend to grow uncontrollably, leading to pronounced biomechanical tissue deformations in the normal parenchyma, which when combined with local morphological differences in the tumor confines on MRI scans, will comprehensively capture tumor field effect. Specifically, we present an integrated MRI-based descriptor, radiomic-Deformation and Textural Heterogeneity (r-DepTH). This descriptor comprises measurements of the subtle perturbations in tissue deformations throughout the surrounding normal parenchyma due to mass effect. This involves non-rigidly aligning the patients’ MRI scans to a healthy atlas via diffeomorphic registration. The resulting inverse mapping is used to obtain the deformation field magnitudes in the normal parenchyma. These measurements are then combined with a 3D texture descriptor, Co-occurrence of Local Anisotropic Gradient Orientations (COLLAGE), which captures the morphological heterogeneity and infiltration within the tumor confines, on MRI scans. In this work, we extensively evaluated r-DepTH for survival risk-stratification on a total of 207 GBM cases from 3 different cohorts (Cohort 1 (${n}{1} = {53}$), Cohort 2 (${n}{2} = {75}$), and Cohort 3 (${n}{3} = {79}$)), where each of these three cohorts was used as a training set for our model separately, and the other two cohorts were used for testing, independently, for each training experiment. When employing Cohort 1 for training, r-DepTH yielded Concordance indices (C-indices) of 0.7 and 0.65, hazard ratios (HR) and Confidence Intervals (CI) of 10 (6 − 19) and 5 (3 − 8) on Cohorts 2 and 3, respectively. Similarly, training on Cohort 2 yielded C-indices of 0.6 and 0.7, HR and CI of 1 (0.7 − 2) and 3 (2 − 5) on Cohorts 1 and 3, respectively. Finally, training on Cohort 3 yielded C-indices of 0.75 and 0.63, HR and CI of 24 (10 − 57) and 12 (6 − 21) on Cohorts 1 and 2, respectively. Our results show that r-DepTH descriptor may serve as a comprehensive and a robust MRI-based prognostic marker of disease aggressiveness and survival in solid tumors. [ABSTRACT FROM AUTHOR]

The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as contact resistance. With a systematic investigation, this work demonstrates a capacitive metal-insulator-semiconductor (MIS) field-effect at the electrical contacts to 2D materials: The field-effect depletes or accumulates charge carriers, redistributes the voltage potential, and gives rise to abnormal current saturation and nonlinearity. On one hand, the current saturation hinders the devices' driving ability, which can be eliminated with carefully engineered contact configurations. On the other hand, by introducing the nonlinearity to monolithic analog artificial neural network circuits, the circuits' perception ability can be significantly enhanced, as evidenced using a coronavirus disease 2019 (COVID-19) critical illness prediction model. This work provides a comprehension of the field-effect at the electrical contacts to 2D materials, which is fundamental to the design, simulation, and fabrication of electronics based on 2D materials. [ABSTRACT FROM AUTHOR]

Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating POx/Al2O3 shell in contrast to results using SiOx. We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two applied techniques. We find that atomic-layer deposited POx/Al2O3 has the potential to passivate the surface of InP nanowires, but at the cost of inducing a field-effect on the nanowires, altering their electrostatic potential profile. The results show the importance of using complementary techniques to correctly evaluate and interpret processing related effects for optimization of nanowire-based optoelectronic devices. [ABSTRACT FROM AUTHOR]

The ternary complex photocatalysts of BiOIO 3 /g-C 3 N 4 /MoS 2 by solvent-exfoliation method was synthesized for the first time. In the typical procedure, the BiOIO 3 /g-C 3 N 4 was obtained via hydrothermal synthesis technique, and then the BiOIO 3 /g-C 3 N 4 /MoS 2 photocatalysts were prepared via ultrasonic solvent-exfoliation method from bulk commercial MoS 2 in the alcohol solution. The samples of BiOIO 3 /g-C 3 N 4 /MoS 2 were analyzed by PL, XRD and other characterization analysis methods. The photocatalytic activity of the as-prepared samples was investigated by removing gas phase mercury irradiation under visible light. The as-prepared BCM-0.3 exhibits excellent photocatalytic performance, being with the highest efficiency of 70.58%. Owing to the electronic channels of field-effect, an internal electric field was formed through the corresponding band-gap engineering, improving photocatalytic reaction. Besides, the excellent activity of the ternary photocatalysts BiOIO 3 /g-C 3 N 4 /MoS 2 is attributed to heterostructure between BiOIO 3 /g-C 3 N 4 and MoS 2 , which enlarges spectral response and improved separation efficiency of charge carriers, and MoS 2 -composing, which provides more active sites for catalytic oxidation. In addition, the as-prepared samples with excellent photocatalytic performance also offer a perspective insight into the hydrogen evolution, CO 2 conversion and degradation of organic pollutants. • The ternary compound photocatalyst of BiOIO 3 /g-C 3 N 4 /MoS 2 by solvent-exfoliation method was synthesized for the first time. • The as-prepared ternary nanocomposite exhibits more excellent photoactivity compared with BiOIO 3 /g-C 3 N 4. • The possible photoinduced charges transfer mechanism and photocatalytic reaction mechanism were proposed. [ABSTRACT FROM AUTHOR]

The aim of this paper is to present the out-of-equilibrium body potential behaviour in the Ψ-MOSFET configuration. Consistent measurements in this experimental setup succeeded in providing a substantial understanding of its characteristics in the depletion region. The final objective of this work is to envision this new measurement technique for biochemical sensor applications. Among its advantages, the most important are its simplicity, the good sensitivity, the measurement of a potential instead of a current and the low bias needed for detection compared to the conventional drain current measurements. [ABSTRACT FROM AUTHOR]

We report to apply Al nanoparticles (NPs) to enhance the photovoltaic response of crystalline- or c-Si solar cell from the ultraviolet (UV) throughout the visible and near infrared (NIR) regimes. Al NPs were induced by solid thermal annealing and embedded in a SiO 2 layer that was to passivate the front side of solar cell. Upon the excitation of surface plasmons (SPs) on the Al NPs under light illumination, an enhancement of broadband absorption of the solar cell was observed. The incorporation of Al NPs led to a relative 13.8% increase in photoelectric conversion efficiency of c-Si solar cell, and an external quantum efficiency enhancement from the UV throughout the visible and NIR regimes. The improvement of c-Si solar cell performance was attributed to both effects of absorption and scattering by SPs. [ABSTRACT FROM AUTHOR]

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Stacked van der Waals (vdW) heterostructures where semiconducting two-dimensional (2D) materials are contacted by overlaid graphene electrodes enable atomically thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS2 devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. We can trace this behavior to the stacking-dependent response of the contact region to the capacitive electric field induced by the gate. The contact resistance is a central parameter and our observation establishes an important design rule for ultrathin devices based on 2D atomic crystals. [ABSTRACT FROM AUTHOR]

A thieno [3,2-b] thiophene-based planar liquid crystal molecule, C12-PTTT, which possesses the characteristics of an organic field-effect transistor (OFET), was synthesised and its mesomorphic properties were studied by polarising optical microscopy and differential scanning calorimetry. A wide temperature range for a highly oriented smectic phase was observed. OFET devices made under various conditions, such as self-assembled monolayer treatment and alignment treatment, and with micro-channel structures, were fabricated to measure the electrical properties. Among different OFET device conditions, the best electric carrier mobility for C12-PTTT was 0.038 cm2 V−1 s−1. [ABSTRACT FROM AUTHOR]

Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates. [ABSTRACT FROM AUTHOR]

Recently synthesized small molecule tellurophenes containing ring-appended pinacolboronate (BPin) side groups possess remarkable guest-free air-stable solid-state phosphorescence, structure-based color-tunability and aggregation induced enhanced emission. The charge transport, doping and luminescence behavior of thin transparent films of a tellurophene with BPin groups positioned at the 2,5-positions ( B-Te-6-B ) was investigated. Film formation played a critical role in determining the hole mobility and the photoluminescence (PL) lifetime. Drop-coated films showed the strongest crystallinity, the highest PL quantum yields and a hole mobility ( μ p ) of 1.1 × 10 −4 cm 2 V −1 s −1 , which places tellurophenes in a select group of high mobility phosphorescent emitters. B-Te-6-B was also found to spontaneously form high aspect-ratio microwires upon drop-casting from supersaturated solutions. Oxidative doping in solution by a N(C 6 H 4 Br) 3 [SbCl 6 ]/LiNTf 2 reagent combination (Tf = SO 2 CF 3 ) increased conductivity by 2-4 orders of magnitude without inducing a color change in the films, while exposure to iodine vapor induced a dramatic change in color together with a 4-6 order of magnitude change in the conductivity. The optical transparency, facile electrical doping and relatively high hole mobilities of B-Te-6-B in solution processed thin films offer promise for the use of tellurophenes as host-free emissive layers and hole transport layers in organic optoelectronic devices. [ABSTRACT FROM AUTHOR]

We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in the mid-infrared region. We adopt InAs nanowires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts. [ABSTRACT FROM AUTHOR]

In this paper, we examine the theoretical basis for using passive unheated electron field emitters to control hazardous levels of spacecraft charging. We present the experimental evidence related to the capabilities of passive and low-power active field emitters. The concept of passive field emitters is detailed looking at their characteristics and location on a model satellite typical of a commercial geostationary satellite. The assessment is performed by means of numerical simulations. The generation and extraction of electrons is simulated at micrometric scale. Their flow is modeled at spacecraft scale to assess spacecraft absolute and differential charging alleviation. The system shows good promise limiting the inverted voltage gradient situations, observed especially on solar panels where cover glasses are more positive than solar cells. This situation is known as very risky in flight, possibly leading to sustained secondary arcing powered by the photovoltaic solar arrays themselves. Finally, we review how existing design practice would be modified by the presence of such passive emitters. [ABSTRACT FROM PUBLISHER]

Conventional methods for enzyme immobilisation onto sensor surfaces often use dip-, drop- or spin-coating techniques. In this study, a nano-spotting technique has been investigated for a patterned, spatially resolved deposition of enzymes onto a capacitive field-effect electrolyte-insulator-semiconductor (EIS) sensor and compared with the drop-coating method. Therefore, four different sensor arrangements covered with immobilised penicillinase as a model enzyme have been studied: (i) The sensor surface fully drop-coated, (ii) half drop-coated, (iii) half nano-spotted and (iv) fully nano-spotted with penicillinase. The sensors have been electrochemically characterised in pH buffers and penicillin solutions by means of impedance-spectroscopy, capacitance-voltage and constant-capacitance methods. [ABSTRACT FROM AUTHOR]

Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO/SiN stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied. [Figure not available: see fulltext.] [ABSTRACT FROM AUTHOR]

[Display omitted] • A promising guide for developing graphene-based gas sensors is proposed. • n-p-n ternary devices comprising In 2 O 3 /graphene oxide/phenylenediamine are studied. • Sensing response of our system is 66.3 times higher than its based materials. • Mechanisms of graphene-based gas sensor at room temperature are presented. Over the past decade, advantages of graphene in high-performance gas sensing have been demonstrated, especially for single- or few-layered graphene wherein the theoretical and technical advances are mature. Owing to the complexity of multi-layered graphene (MLG) sensors and the increasing demand for practical applications, there is an urgent need to comprehensively understand the correlation between MLG and its derivatives for developing next-generation gas sensors. Herein, theoretical and empirical strategies for obtaining better gas sensors are developed. These approaches can be divided into three categories: 1) building devices with Fermi level near the Dirac point (E F,Dirac), 2) enhancing the adsorption probability f(x) and driving force (gap between as-prepared and saturated Fermi levels), and 3) accelerating mobility. A device employing p-type reduced graphene oxide (rGO) decorated with n-type indium oxide and phenylenediamine (GIP) was designed and fabricated by adopting approaches 1 and 2 (E F,Dirac and f(x) enhancement). The resulting hole-compensated GIP displayed a remarkable response to formaldehyde (HCHO), which was 66.3 times higher than rGO, with faster response/recovery. GIP also exhibited higher selectivity for HCHO than for ammonia and trimethylamine. We believe that the classification will untangle the complex role of graphene in sensing, helping to design next-generation advanced gas sensors. [ABSTRACT FROM AUTHOR]

Dielectric-silicon interfaces are becoming ever more important to device performance. Charge inside a surface dielectric layer is neutralized in Si leading to an accumulation or inversion layer of free carriers. Additionally, states at the interface are occupied by charges via Shockley-Read-Hall carrier statistics. It is accepted that the density of interface charge near midgap, which can only reach a concentration as high as the density of states, D it , has a minor effect on band bending compared to the charges in the dielectric for a well passivated interface. Here, we show that it is the state density near the band edge what plays the major role. We conclude this by comparing our measurements with device modelling of a Si/SiO 2 interface. We measure the wafer sheet resistance while applying various amounts of positive charge to the passivating dielectric on an n-type Si wafer, and then reproduce the measured resistance values using simulations. This modelling indicates that D it at midgap has indeed a minor effect on sheet resistance change, while the total amount of tail states has a significant impact on the distribution of induced carriers. We test this model to detect the amount of acceptor-like states at the band-tails of oxide passivated silicon with different processing. We discuss and analyse the limitations of this technique. While we report on the Si/SiO 2 interface due to its relevance in photovoltaics, our method can be used to study the properties of other semiconductor-dielectric interfaces. As such this work is of importance across various optoelectronic devices. • Band tails interface state density is crucial to the charge carriers induced via field effect. • The sheet resistance of field induced layers strongly depends on D it at band tails. • Measurements and simulations of resistance allow the detection of D it at band tails. • This method can shed light in the carrier population control at device interfaces. [ABSTRACT FROM AUTHOR]

A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to k R = 0.08 Å -1 ), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.

Simple Summary: Understanding the microRNAs' role in cancer is challenging, because, in the most cases, the only tissues available are the tumor and its counterpart, the adjacent-to-tumor tissue. Indeed, this scenario could affect our analyses in the cancer field, including to colorectal cancer. Using systematic criteria to select the healthy individuals and sigmoid colon cancer cases, we found that adjacent-to-tumor tissue already has molecular alterations in relation to healthy tissue and to tumor tissue as well. In addition, all miRNAs found showed to be involved in the carcinogenic process, according to the gene enrichment analysis. We suggested that future cancer studies should consider using these three tissues in their analysis, as well as the creation of a database of healthy individuals' miRNA expression profiles. Using these three tissues, we could better understand the role of adjacent-to-tissue in cancer and other several questions related with clinical aspects. The aberrant expression of microRNAs in known to play a crucial role in carcinogenesis. Here, we evaluated the miRNA expression profile of sigmoid colon cancer (SCC) compared to adjacent-to-tumor (ADJ) and sigmoid colon healthy (SCH) tissues obtained from colon biopsy extracted from Brazilian patients. Comparisons were performed between each group separately, considering as significant p-values < 0.05 and |Log2(Fold-Change)| > 2. We found 20 differentially expressed miRNAs (DEmiRNAs) in all comparisons, two of which were shared between SCC vs. ADJ and SCC vs. SCH. We used miRTarBase, and miRTargetLink to identify target-genes of the differentially expressed miRNAs, and DAVID and REACTOME databases for gene enrichment analysis. We also used TCGA and GTEx databases to build miRNA-gene regulatory networks and check for the reproducibility in our results. As findings, in addition to previously known miRNAs associated with colorectal cancer, we identified three potential novel biomarkers. We showed that the three types of colon tissue could be clearly distinguished using a panel composed by the 20 DEmiRNAs. Additionally, we found enriched pathways related to the carcinogenic process in which miRNA could be involved, indicating that adjacent-to-tumor tissues may be already altered and cannot be considered as healthy tissues. Overall, we expect that these findings may help in the search for biomarkers to prevent cancer progression or, at least, allow its early detection, however, more studies are needed to confirm our results. [ABSTRACT FROM AUTHOR]

Gastric cancer (GC) represents a notable amount of morbidity and mortality worldwide. Understanding the molecular basis of CG will offer insight into its pathogenesis in an attempt to identify new molecular biomarkers to early diagnose this disease. Therefore, studies involving small non-coding RNAs have been widely explored. Among these, PIWI-interacting RNAs (piRNAs) are an emergent class that can play important roles in carcinogenesis. In this study, small-RNA sequencing was used to identify the global piRNAs expression profile (piRNome) of gastric cancer patients. We found 698 piRNAs in gastric tissues, 14 of which were differentially expressed (DE) between gastric cancer (GC), adjacent to gastric cancer (ADJ), and non-cancer tissues (NC). Moreover, three of these DE piRNAs (piR-48966*, piR-49145, piR-31335*) were differently expressed in both GC and ADJ samples in comparison to NC samples, indicating that the tumor-adjacent tissue was molecularly altered and should not be considered as a normal control. These three piRNAs are potential risk biomarkers for GC, especially piR-48966* and piR-31335*. Furthermore, an in-silico search for mRNAs targeted by the differentially expressed piRNAs revealed that these piRNAs may regulate genes that participate in cancer-related pathways, suggesting that these small non-coding RNAs may be directly and indirectly involved in gastric carcinogenesis. [ABSTRACT FROM AUTHOR]

The continuous degradation of carbonate electrolytes and the dissolution of transition metal cations due to parasitic reactions on the cathode-electrolyte interphase (CEI) block the practical application of LiNi 0.5 Mn 1.5 O 4 -based lithium-ion batteries (LNMO-based LIBs) at a high voltage. cis -1,2,3,6-Tetrahydrophthalic anhydride (CTA) has been used as a functional additive in a carbonate baseline electrolyte (BE) for constructing the CEI film to enhance the cyclic stability of LNMO-based LIBs. The LNMO/Li cell with CTA exhibits a preponderant capacity retention of 83.3% compared with those of propionic anhydride (PA) (46.5%) and BE (13.6%) after 500 cycles at the current density of 1 C from 3.5 to 4.9 V. Additionally, the LNMO/graphite full cell with CTA still has a higher capacity retention of 95.46% even after 300 cycles at 1 C. By characterizations, it is reasonably demonstrated that CTA was oxidated to participate in the construction of a CEI film. An unsaturated aromatic group was introduced into the composition of the CEI film along with CTA in the formation process of the CEI film, which further improved the antioxidative activity of the CEI film under the influence of field-effect. Specifically, the CEI film obtains appreciable stability because of its higher antioxidative activity under the influence of field-effect. The stabilized CEI can significantly suppress the parasitic reactions of electrolytes, decrease the consumption of active-Li + , and protect the LNMO cathode structure, thereby enhancing the cyclic compatibility of LNMO-based LIBs with the carbonate electrolytes from 3.5 to 4.9 V.