246 results on '"Du, Guotong"'
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2. Realization of p-type conduction in compositionally graded quaternary AlInGaN
3. A polyethylene glycol-based form-stable phase change material supported by nanoarray-modified metal foam
4. Solar-blind ultraviolet photodetectors based on homoepitaxial β-Ga2O3 films
5. A hydrogel-like form-stable phase change material with high loading efficiency supported by a three dimensional metal–organic network
6. Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption
7. Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer
8. Growth and characterization of porous sp2-BN films with hollow spheres under hydrogen etching effect via borazane thermal CVD
9. Effects of 10 MeV electron irradiation on the characteristics of gallium-nitride-based pin alpha-particle detectors
10. High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates
11. The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells
12. Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate
13. Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOCVD
14. Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide
15. Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x ≤ 0.104)
16. Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices
17. Ultraviolet electroluminescence properties from devices based on n-ZnO/i-NiO/p-Si light-emitting diode
18. Study on the electroluminescence properties of the p-NiMgO:Li/MgO/n-ZnO nanowires/ITO heterojunction
19. UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure
20. Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE
21. Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer
22. Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes
23. Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices
24. Near infrared electroluminescence from n-InN/p-NiO/GaN light-emitting diode fabricated by PAMBE
25. Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction
26. Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H–SiC by metal-organic chemical vapor deposition
27. Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition
28. Influence of Sb valency on the conductivity type of Sb-doped ZnO
29. Catalyst free growth of high density uniform InN nanocolumns on p-GaAs(0 0 1) surface by PA-MBE and their in situ XPS analysis
30. Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction
31. Ultraviolet electroluminescence from n-ZnO/NiO/p-GaN light-emitting diode fabricated by MOCVD
32. Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (1 0 0) substrates by MOCVD method
33. The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate
34. Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition
35. A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging
36. Turning a linear waterborne polyurethane into a crosslinked counterpart with improved water resistance and mechanical strength through a fast post metal-organic crosslinking
37. Preparation of High-Thickness n−-Ga2O3 Film by MOCVD
38. Preparation of High-Thickness n − -Ga 2 O 3 Film by MOCVD.
39. Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD
40. High-Performance Ultraviolet Light-Emitting Diodes Using n-ZnO/p-hBN/p-GaN Contact Heterojunctions
41. Stable Low Electron Concentration β-Ga2O3 Films Grown by Metal-Organic Chemical Vapor Deposition
42. Growth and characterization of amorphous boron nitride dielectric films on Si via RF sputtering at room temperature
43. Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting
44. Photodetectors: Ultrastable Lead‐Free Double Perovskite Photodetectors with Imaging Capability (Adv. Mater. Interfaces 10/2019)
45. Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga 2 O 3
46. Ultrastable Lead‐Free Double Perovskite Photodetectors with Imaging Capability
47. Fabrication of morphology-controlled and highly-crystallized perovskite microwires for long-term stable photodetectors
48. Retraction notice to “High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy” [Journal of Crystal Growth, 366 (2013) 35-38]
49. Ultraviolet Photodetector Based on ITO/MgO/ZnO Structure Grown by Hydrothermal Process
50. In-assisted growth of InN nanocolumn on Si(111) substrate by molecular beam epitaxy
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