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This study reports the development of an efficient and sensitive method to directly sense microRNA (miRNA) in high ionic strength solutions with the use of electrical double layer (EDL) gated AlGaN/GaN high electron mobility transistor (HEMT). This FET structure uses a complementary DNA probe functionalized gate electrode which is separated from the transistor channel. In this research, we focus on the detection of miRNA samples, miR-126, miR-208a and miR-21 which are biomarkers of cardiovascular diseases (CVD). The sensor has a dynamic range that is comparable to the clinically relevant concentration range with a detection limit as low as 1 fM. Selectivity of the sensor is demonstrated by evaluating sensor response at fully complementary and slightly mismatched sequences. The miniaturized sensor can be used in point of care or homecare diagnostics for rapid miRNA detection to evaluate CVDs at an early stage.

Silicon nanostructures can improve the bending strength of wafers, but often trap particle contaminates. A double-sided surface nanostructure with a morphology controlled via wet chemical etching is used to both improve the mechanical strength and reduce surface reflection. Compared with a conventional polished silicon wafer, the bending strength was increased by 3.4 times and the surface reflection was reduced to 1%, and so can provide a promising solution for photovoltaic applications. The optically unused side of the wafer was protected by a thin silicon layer that prevented the entrapment of particles that might cause glitches in subsequent fabrication processes, all the while maintaining the enhancement in strength. The particle test confirmed that incorporating protection layer intacts the particle count with polished silicon sample.

The output power of conventional light-emitting diodes (LEDs) is enhanced by 9% at 120 mA current without alterations to the existing fabrication techniques and to the multi-quantum well (MQW) junction. The output power is improved by nanotexturing the street of the n-gallium nitride (GaN) layer that was unexploited, for the enhancement of the optical or electrical properties. The nanotextured street enhances the light extraction exclusively near the street of the n-GaN layer by reducing the reflections from the LED surface. Similar light output patterns and I–V characteristics for LEDs with and without street nanotexturing were observed, confirming that the enhanced light extraction has been achieved without a change in the spatial distribution of light or in the properties of the MQW junction. A new approach for the output power enhancement of all types of existing LEDs is provided.

Backside nanotexturing fabricated by electroless metal assisted wet chemical etching, protected with a deposited thin silicon layer, is a new approach to create high bending strength silicon samples. Bending strength for protected nanotextured samples followed by CMP process was enhanced by ∼3.4 folds as compared to polished silicon samples, which emphasize the possibility of industrial implementation. The morphology of silicon deposition layer upon nanotexture influences the stress behavior, which need an adequate fabrication technique for uniform deposition at wafer scale. The thin protection layer upon nanotexture prevents the unwanted particle trapping, which affects the electrical performances of the device. Moreover, this technology provides a rupture resistive solution for IC, MEMS and photovoltaic devices for industrial implementation.

Measurement of blood pressure is one of the most important parameters for personal healthcare. Arteries are responsible for carrying blood from the heart to all parts of the body and the pressure of blood in arteries is measured in many abnormalities. The blood pressure is explained by two parameters. The highest blood pressure during heart pumping is measured by systolic pressure whereas the diastolic pressure measures the lowest blood pressure when the heart is not pumping the blood. For current work, the principle of light absorption is used to measure blood pressure in arteries. Light is more strongly absorbed by blood compared to skin or tissues and therefore, blood flow change can be detected by the change in intensity of light. This blood flow change is proportional to blood pressure and hence the blood pressure can be measured by measurement of change in light intensity. In this work, we have developed the InGaP photodiode module with higher signal to noise ratio for blood pressure measurement. The InGaP photodiode External Quantum Efficiency (EQE) is 50% higher than Silicon (Si) photodiode. The EQE is ever higher than Si photodiode equipped with the filter as shown in Fig. 1(a). The newly developed InGaP photodiode has the advantage of selective EQE at different wavelength. The photodiode has almost zero EQE outside the desired region of wavelength (300 nm- 700 nm) where the Si photodiode EQE is spread in the longer wavelength region (300 nm - 1200 m). This higher region of EQE can lower the signal to noise ratio. The InGaP photodiode has an increased signal to noise ratio (24.8) compared to other photodiodes (24.0) due to the smaller wavelength region of EQE. Both systolic blood pressure and diastolic blood pressure measurement was compared for actual value and predicted value. The R2 correlation value for systolic and diastolic blood pressure is measured to be 0.86 and 0.91 respectively as shown in Fig. 1(b) and Fig. 1(c). This works explore new doorway for LED and photodiode application in the field of biomedical sensors. The application of our new photodiode with enhanced EQE and the wide range of LED has numerous possibilities. The higher possibility of multichip design with Flip chip packaging technique can provide a single module for measurement of blood pressure, blood glucose, blood lipid and other parameters using LED of different wavelength. Figure 1