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Your search keyword '"Chen, X.S."' showing total 41 results
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41 results on '"Chen, X.S."'

13. The detector system of the Daya Bay reactor neutrino experiment

Author

An, F.P., Bai, J.Z., Balantekin, A.B., Band, H.R., Beavis, D., Beriguete, W., Bishai, M., Blyth, S., Brown, R.L., Butorov, I., Cao, D., Cao, G.F., Cao, J., Carr, R., Cen, W.R., Chan, W.T., Chan, Y.L., Chang, J.F., Chang, L.C., Chang, Y., Chasman, C., Chen, H.Y., Chen, H.S., Chen, M.J., Chen, Q.Y., Chen, S.J., Chen, S.M., Chen, X.C., Chen, X.H., Chen, X.S., Chen, Y.X., Chen, Y., Cheng, J.H., Cheng, J., Cheng, Y.P., Cherwinka, J.J., Chidzik, S., Chow, K., Chu, M.C., Cummings, J.P., de Arcos, J., Deng, Z.Y., Ding, X.F., Ding, Y.Y., Diwan, M.V., Dong, L., Dove, J., Draeger, E., Du, X.F., Dwyer, D.A., Edwards, W.R., Ely, S.R., Fang, S.D., Fu, J.Y., Fu, Z.W., Ge, L.Q., Ghazikhanian, V., Gill, R., Goett, J., Gonchar, M., Gong, G.H., Gong, H., Gornushkin, Y.A., Grassi, M., Greenler, L.S., Gu, W.Q., Guan, M.Y., Guo, R.P., Guo, X.H., Hackenburg, R.W., Hahn, R.L., Han, R., Hans, S., He, M., He, Q., He, W.S., Heeger, K.M., Heng, Y.K., Higuera, A., Hinrichs, P., Ho, T.H., Hoff, M., Hor, Y.K., Hsiung, Y.B., Hu, B.Z., Hu, L.M., Hu, L.J., Hu, T., Hu, W., Huang, E.C., Huang, H.Z., Huang, H.X., Huang, P.W., Huang, X., Huang, X.T., Huber, P., Hussain, G., Isvan, Z., Jaffe, D.E., Jaffke, P., Jen, K.L., Jetter, S., Ji, X.P., Ji, X.L., Jiang, H.J., Jiang, W.Q., Jiao, J.B., Johnson, R.A., Joseph, J., Kang, L., Kettell, S.H., Kohn, S., Kramer, M., Kwan, K.K., Kwok, M.W., Kwok, T., Lai, C.Y., Lai, W.C., Lai, W.H., Langford, T.J., Lau, K., Lebanowski, L., Lee, J., Lee, M.K.P., Lei, R.T., Leitner, R., Leung, J.K.C., Lewis, C.A., Li, B., Li, C., Li, D.J., Li, F., Li, G.S., Li, J., Li, N.Y., Li, Q.J., Li, S.F., Li, S.C., Li, W.D., Li, X.B., Li, X.N., Li, X.Q., Li, Y., Li, Y.F., Li, Z.B., Liang, H., Liang, J., Lin, C.J., Lin, G.L., Lin, P.Y., Lin, S.X., Lin, S.K., Lin, Y.C., Ling, J.J., Link, J.M., Littenberg, L., Littlejohn, B.R., Liu, B.J., Liu, C., Liu, D.W., Liu, H., Liu, J.L., Liu, J.C., Liu, S., Liu, S.S., Liu, X., Liu, Y.B., Lu, C., Lu, H.Q., Lu, J.S., Luk, A., Luk, K.B., Luo, T., Luo, X.L., Ma, L.H., Ma, Q.M., Ma, X.Y., Ma, X.B., Ma, Y.Q., Mayes, B., McDonald, K.T., McFarlane, M.C., McKeown, R.D., Meng, Y., Mitchell, I., Mohapatra, D., Monari Kebwaro, J., Morgan, J.E., Nakajima, Y., Napolitano, J., Naumov, D., Naumova, E., Newsom, C., Ngai, H.Y., Ngai, W.K., Nie, Y.B., Ning, Z., Ochoa-Ricoux, J.P., Olshevskiy, A., Pagac, A., Pan, H.-R., Patton, S., Pearson, C., Pec, V., Peng, J.C., Piilonen, L.E., Pinsky, L., Pun, C.S.J., Qi, F.Z., Qi, M., Qian, X., Raper, N., Ren, B., Ren, J., Rosero, R., Roskovec, B., Ruan, X.C., Sands, W.R., III, Seilhan, B., Shao, B.B., Shih, K., Song, W.Y., Steiner, H., Stoler, P., Stuart, M., Sun, G.X., Sun, J.L., Tagg, N., Tam, Y.H., Tanaka, H.K., Tang, W., Tang, X., Taychenachev, D., Themann, H., Torun, Y., Trentalange, S., Tsai, O., Tsang, K.V., Tsang, R.H.M., Tull, C.E., Tung, Y.C., Viaux, N., Viren, B., Virostek, S., Vorobel, V., Wang, C.H., Wang, L.S., Wang, L.Y., Wang, L.Z., Wang, M., Wang, N.Y., Wang, R.G., Wang, T., Wang, W., Wang, W.W., Wang, X.T., Wang, X., Wang, Y.F., Wang, Z., Wang, Z.M., Webber, D.M., Wei, H.Y., Wei, Y.D., Wen, L.J., Wenman, D.L., Whisnant, K., White, C.G., Whitehead, L., Whitten, C.A., Jr., Wilhelmi, J., Wise, T., Wong, H.C., Wong, H.L.H., Wong, J., Wong, S.C.F., Worcester, E., Wu, F.F., Wu, Q., Xia, D.M., Xia, J.K., Xiang, S.T., Xiao, Q., Xing, Z.Z., Xu, G., Xu, J.Y., Xu, J.L., Xu, J., Xu, W., Xu, Y., Xue, T., Yan, J., Yang, C.G., Yang, L., Yang, M.S., Yang, M.T., Ye, M., Yeh, M., Yeh, Y.S., Yip, K., Young, B.L., Yu, G.Y., Yu, Z.Y., Zeng, S., Zhan, L., Zhang, C., Zhang, F.H., Zhang, H.H., Zhang, J.W., Zhang, K., Zhang, Q.X., Zhang, Q.M., Zhang, S.H., Zhang, X.T., Zhang, Y.C., Zhang, Y.H., Zhang, Y.M., Zhang, Y.X., Zhang, Z.J., Zhang, Z.Y., Zhang, Z.P., Zhao, J., Zhao, Q.W., Zhao, Y.F., Zhao, Y.B., Zheng, L., Zhong, W.L., Zhou, L., Zhou, N., Zhou, Z.Y., Zhuang, H.L., Zimmerman, S., and Zou, J.H.

Published
2016
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31. Gate-enhanced thermoelectric effects in all-carbon quantum devices

Author

Liu, Y.S., primary, Shao, X.Y., additional, Shao, T., additional, Zhang, J.Y., additional, Kuang, Y.W., additional, Zhang, D.B., additional, Shao, Z.G., additional, Yu, H.L., additional, Hong, X.K., additional, Feng, J.F., additional, Yang, X.F., additional, Chen, X.S., additional, and Wang, X.F., additional

Published
2016
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41. Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation.

Author

Zhang, J.W., He, G., Zhou, L., Chen, H.S., Chen, X.S., Chen, X.F., Deng, B., Lv, J.G., and Sun, Z.Q.

Subjects
*METAL microstructure, *OPTICAL properties of metals, *MAGNETRON sputtering, *HAFNIUM oxide, *THIN films, *TITANIUM dioxide, *CRYSTALLIZATION
Abstract

Highlights: [•] Sputtering-derived Hf1−xTi x O2 gate dielectrics have been deposited on Si substrates. [•] Increase in crystallization temperature and reduction in Eg have been observed. [•] Formation of silicate layer for 9% TiO2-doped HfO2/Si sample has been detected. [ABSTRACT FROM AUTHOR]

Published
2014
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