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A simple method to fabricate dome-shaped particles of various materials, with different sizes and compositions, is presented. This versatility enables us to engineer multifunctional particles with the desired properties for specific biological applications.

Due to strong electron-phonon interactions, strain engineering is a powerful tool to control quantum critical phenomena in strongly correlated oxides. Exploring this possibility requires understanding the nanoscale structure of quantum materials and the role it plays in forming the strain landscape. Here, we used a combination of x-ray nanoimaging and reciprocal space mapping to study the nanostructure of the archetypal Mott insulator ${\mathrm{VO}}_{2}$, featuring an insulator-to-metal and structural phase transitions. We found that ${\mathrm{VO}}_{2}$ thin films grown on r-cut sapphire consist of two intertwined crystal lattices, permanently inclined with respect to each other. This persistent pattern of twin domains stands out from the symmetry breaking induced by the structural phase transition and conceivably originates from the post-growth strain relaxation process. We propose a model explaining the formation of twin domains and the emergence of anisotropy in the film nanostructure. Our work suggests using miscut substrates to suppress either one or the other twin that can serve as a new tool to control strain in ${\mathrm{VO}}_{2}$ films.

A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and light ions. Degree of disorder was controlled by measurements of the Raman scattering spectra. The temperature dependences of conductivity and magnetoresistance (MR) showed that at low disorder, conductivity is governed by the weak localization and antilocalization regime. Further increase of disorder leads to strong localization of charge carriers, when the conductivity is described by the variable-range-hopping (VRH) mechanism. It was observed that MR in the VRH regime is negative in perpendicular fields and is positive in parallel magnetic fields which allowed to reveal different mechanisms of hopping MR. Theoretical analysis is in a good agreement with experimental data., 25 pages, pdf. arXiv admin note: text overlap with arXiv:1507.01429

We measured the photon count rate (PCR) and dark count rate (DCR) of a superconducting nanowire single photon detector (SNSPD) exposed to either a DC magnetic field (up to 60 mT) or to a low-amplitude oscillating field ( 0.12 – 0.48 mT, up to 50 kHz). In both cases, the results show an increase in the PCR and the DCR as the DC field or the frequency of the AC field increase. However, the ratio DCR/(PCR + DCR) increases significantly with an increasing DC field, whereas this ratio is approximately constant as the frequency of the AC field increases up to frequencies in the kHz regime. The results suggest a more favorable effect of AC fields on the operation of the SNSPD.

Utilizing self-assembled DNA structures in the development of nanoelectronic circuits requires transforming the DNA strands into highly conducting wires. Toward this end, we investigate the use of DNA self-assembled nanowires as templates for the deposition of a superconducting material. Nanowires formed by the deposition of superconducting NbN exhibit thermally activated and quantum phase slips as well as exceptionally large negative magnetoresistance. The latter effect can be utilized to suppress a significant part of the low temperature resistance caused by the quantum phase slips.

Magnetoresistance measurements in a granular Nb nanoring reveal current-induced crossover between two distinct quantum coherence effects. At low bias currents, Cooper-pair coherence is manifested by Little-Parks oscillations with flux periodicity of h/2 e. At high bias currents, magnetoresistance oscillations with flux periods of h/ e are observed and interpreted as Aharonov-Bohm oscillations, reflecting the phase coherence of individual quasi-particles. The model explaining these data views the ring as a chain of superconducting grains weakly coupled by tunnel junctions. Low bias currents allow coherent tunneling of Cooper pairs between the grains. Increasing the current above the critical current of all the junctions creates a quasi-particles conduction channel along the ring, allowing for quantum interference of quasi-particles.

Directing neuronal migration and growth has an important impact on potential post traumatic therapies. Magnetic manipulation is an advantageous method for remotely guiding cells. In the present study, we have generated highly localized magnetic fields with controllable magnetic flux densities to manipulate neuron-like cell migration and organization at the microscale level. We designed and fabricated a unique miniaturized magnetic device composed of an array of rectangular ferromagnetic bars made of permalloy (Ni80Fe20), sputter-deposited onto glass substrates. The asymmetric shape of the magnets enables one to design a magnetic landscape with high flux densities at the poles. Iron oxide nanoparticles were introduced into PC12 cells, making the cells magnetically sensitive. First, we manipulated the cells by applying an external magnetic field. The magnetic force was strong enough to direct PC12 cell migration in culture. Based on time lapse observations, we analysed the movement of the cells and estimated the amount of MNPs per cell. We plated the uploaded cells on the micro-patterned magnetic device. The cells migrated towards the high magnetic flux zones and aggregated at the edges of the patterned magnets, corroborating that the cells with magnetic nanoparticles are indeed affected by the micro-magnets and attracted to the bars' magnetic poles. Our study presents an emerging method for the generation of pre-programmed magnetic micro-'hot spots' to locate and direct cellular growth, setting the stage for implanted magnetic devices.

The conductivity and Hall effect were measured in CVD-grown monolayer graphene as a function of the gate voltage, $V_{g}$, at temperatures down to $T$ = 2 K and in magnetic fields up to $B$ = 8 T. The minimal conductivity was observed at positive $V_{g}$ which shows the position of the charge neutrality point, $V_{NP}$. With decreasing $T$, $V_{NP}$ first decreases, but stop to decrease at low $T$. Hysteresis of conductivity shows similar behavior: it decreases with decreasing $T$ and disappears at low $T$. A significant asymmetry was observed at low density of charge carriers $|n|=(n,p)$: mobility of holes was less than mobility of electrons. The asymmetry decreases with increasing $|n|$. It was observed that the value of $|n|$ determined from the Hall effect is less than the full value induced by $V_{g}$. In strong perpendicular $B$, Shubnikov-de Haas (SdH) oscillations were observed in the longitudinal conductivity, $\sigma_{xx}$, together with half-integer quantum Hall plateaus. It was found that $|n|$ determined from SdH oscillations is equal to the full value induced by $V_{g}$ as opposed to the Hall effect. Explanatory models for all observed phenomena are discussed., Comment: 8 pages, 6 figures

Transition metal oxides (TMOs) are complex electronic systems which exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal-insulator phase-transition (MIT), the origin of which is still under debate. Here we report the discovery of a memory effect in both systems, manifest through an increase of resistance at a specific temperature, which is set by reversing the temperature-ramp from heating to cooling during the MIT. The characteristics of this ramp-reversal memory effect do not coincide with any previously reported history or memory effects in manganites, electron-glass or magnetic systems. From a broad range of experimental features, supported by theoretical modelling, we find that the main ingredients for the effect to arise are the spatial phase-separation of metallic and insulating regions during the MIT and the coupling of lattice strain to the local critical temperature of the phase transition. We conclude that the emergent memory effect originates from phase boundaries at the reversal-temperature leaving `scars` in the underlying lattice structure, giving rise to a local increase in the transition temperature. The universality and robustness of the effect shed new light on the MIT in complex oxides., 18 pages, 4 figures, supporting information in publisher web-site

The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition. If these interface dislocations are stable at room temperature, we conjectured, a new route opens to control thickness of VO2 films by postdeposition thinning of relaxed films, overcoming the need for thickness-dependent strain-engineered substrates. This is possible only if thinning does not alter the films' electronic properties. We find that wet etching in a dilute NaOH solution can effectively thin the VO2 films, which continue to show a significant MIT, even when etched to 10 nm, for which directly deposited films show nearly no transition. The structural and chemical composition were not modified by the etching, but the grain size and film roughness were, which modified the hysteresis width and magnitude of the MIT resistance change.

Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems., 15 p, 4 figures

Growth factors play an important role in nerve regeneration and repair. An attractive drug delivery strategy, termed &ldquo, magnetic targeting&rdquo, aims to enhance therapeutic efficiency by directing magnetic drug carriers specifically to selected cell populations that are suitable for the nervous tissues. Here, we covalently conjugated nerve growth factor to iron oxide nanoparticles (NGF-MNPs) and used controlled magnetic fields to deliver the NGF&ndash, MNP complexes to target sites. In order to actuate the magnetic fields a modular magnetic device was designed and fabricated. PC12 cells that were plated homogenously in culture were differentiated selectively only in targeted sites out of the entire dish, restricted to areas above the magnetic &ldquo, hot spots&rdquo, To examine the ability to guide the NGF-MNPs towards specific targets in vivo, we examined two model systems. First, we injected and directed magnetic carriers within the sciatic nerve. Second, we injected the MNPs intravenously and showed a significant accumulation of MNPs in mouse retina while using an external magnet that was placed next to one of the eyes. We propose a novel approach to deliver drugs selectively to injured sites, thus, to promote an effective repair with minimal systemic side effects, overcoming current challenges in regenerative therapeutics.

Nb nano-rings connected serially by Nb wires exhibit, at low bias currents, the typical parabolic Little-Parks magnetoresistance oscillations. As the bias current increases, these oscillations become sinusoidal. This result is ascribed to the generation of Josephson junctions caused by the combined effect of current-induced phase slips and the non-uniformity of the order parameter along each ring due to the Nb wires attached to it. This interpretation is validated by further increasing the bias current, which results in magnetoresistance oscillations typical of a SQUID.

Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data., Latex, 5 pages, 5 eps Figures. As accepted for publication in Graphene

Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in perpendicular magnetic fields, hopping resistivity $R$ decreases, which corresponds to negative MR (NMR), while parallel magnetic field results in positive MR (PMR) at low temperatures. NMR is explained on the basis of the "orbital" model in which perpendicular magnetic field suppresses the destructive interference of many paths through the intermediate sites in the total probability of the long-distance tunneling in the VRH regime. At low fields, a quadratic dependence ($|\Delta R/R|\sim B^2$) of NMR is observed, while at $B > B^*$, the quadratic dependence is replaced by the linear one. It was found that all NMR curves for different samples and different temperatures could be merged into common dependence when plotted as a function of $B/B^*$. It is shown that $B^*\sim T^{1/2}$ in agreement with predictions of the "orbital" model. The obtained values of $B^*$ allowed also to estimate the localization radius $\xi$ of charge carriers for samples with different degree of disorder. PMR in parallel magnetic fields is explained by suppression of hopping transitions via double occupied states due to alignment of electron spins., Comment: 14 pages, 9 figures. As accepted for publication on Physica E

The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that these methods of annealing have dramatically different influence on the RS lines. Annealing in vacuum below 500$^{\circ}$C leads to significant decrease of both D-line, associated with defects, and 2D-line, associated with the intact lattice structure, which can be explained by annealing-induced enhanced doping. Further annealing in vacuum up to 1000$^{\circ}$C leads to significant increase of 2D-line together with continuous decrease of D-line, which gives evidence of partial removal of defects and recovery of the damaged lattice. Annealing in forming gas is less effective in this sense. The blue shift of all lines is observed after annealing. It is shown that below 500$^{\circ}$C, the unintentional doping is the main mechanism of shift, while at higher annealing temperatures, the lattice strain dominates due to mismatch of the thermal expansion coefficient of graphene and the SiO$_{2}$ substrate. Inhomogeneous distribution of stress and doping across the samples leads to the correlated variation of the amplitude and the peak position of RS lines., LaTeX, 7 pages, 11 eps files. Submitted to J. Appl. Phys

The influence of long-term ageing (about one year) on the Raman scattering (RS) spectra and the temperature dependence of conductivity has been studied in two series of monolayer graphene samples irradiated by different doses of C$^{+}$ and Xe$^{+}$ ions. It is shown that the main result of ageing consists of changes in the intensity and position of D- and G- and 2D-lines in RS spectra and in an increase of the conductivity. The observed effects are explained in terms of an increase of the radius of the \textquotedblleft activated\textquotedblright{} area around structural defects., Comment: LaTex, 5 pages, 6 eps Figures

Thermal imaging based on room temperature bolometer sensors is a growing market, constantly searching for improved sensitivity. One important factor is the temperature coefficient of resistance (TCR), i.e., the sensitivity of the active material. Herein, the authors report the improved TCR properties attainable by the “ion beam assisted deposition” method for room temperature deposition. VyM1−yOx (M = Nb, Hf) thin-film alloys were fabricated on 1 μm thermal SiO2 atop Si (100) substrates by reactive magnetron cosputtering at room temperature using a low energy ion source, aimed at the film, to insert dissociated oxygen species and increase film density. The authors studied the influence of deposition parameters such as oxygen partial pressure, V to M ratio, and power of the plasma source, on resistance and TCR. The authors show high TCR (up to −3.7% K−1) at 300 K, and excellent uniformity, but also an increase in resistance. The authors emphasize that samples were prepared at room temperature with no heat ...