35 results on '"Amann, M. -C."'
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2. Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy
3. Giant nonlinear circular dichroism from nonlinear chiral polaritonic metasurfaces
4. Broadband second-harmonic generation from electrically tunable nonlinear polaritonic metasurfaces
5. Widely tunable III-V-on-silicon Vernier lasers operating in the 2.3 um wavelength range
6. 726.7-Gb/s 1.5-μm single-mode VCSEL discrete multi-tone transmission over 2.5-km multicore fiber
7. Experimental Demonstration of 503.61-Gbit/s DMT over 10-km 7-Core Fiber with 1.5μm SM-VCSEL for Optical Interconnects
8. 726.7-Gb/s 1.5-mu m Single-Mode VCSEL Discrete Multi-Tone Transmission over 2.5-km Multicore Fiber
9. 7×100 Gbps PAM-4 transmission over 1-km and 10-km single mode 7-core fiber using 1.5-μm SM-VCSEL
10. High-speed SDM interconnects with directly-modulated 1.5-μm VCSEL enabled by low-complexity signal processing techniques
11. Flexible hybrid integration of photonic and electronic chips using aerosol-jet printing
12. PAM‐4 VCSEL driver with selective falling‐edge pre‐emphasis
13. 726.7-Gb/s 1.5-µm Single-Mode VCSEL Discrete Multi-Tone Transmission over 2.5-km Multicore Fiber
14. Non-destructive Photo-modulated Reflectance Study of GalnAsSb- based VCSEL
15. Towards efficient 100 Gb/s serial rate optical interconnects : A duobinary way
16. Transient thermal analysis of semiconductor diode lasers under pulsed operationde
17. A 2x50 Gb/s PAM-4 driver IC integrated with a 1.5 µm VCSEL array
18. Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 μm
19. THz surface emission by difference frequency generation in quantum cascade lasers
20. Single Stack Active Region Nonlinear Quantum Cascade Lasers for Improved THz Emission
21. Auger recombination in type I GalnAsSb/GaSb lasers and its variation with wavelength in the 2–3 μm range
22. Towards efficient 100 Gb/s serial rate optical interconnects: A duobinary way
23. Room-temperature vertical-cavity surface-emitting lasers at 4 μm with GaSb-based type-II quantum wells
24. Transient thermal analysis of semiconductor diode lasers under pulsed operation
25. GaSb-based Electrically-Pumped Vertical Cavity Surface Emitting Lasers for the 3-4 μm Wavelength Range
26. Highly strained Esaki tunnel diodes on InP substrate with type-III band alignment
27. Flat nonlinear optics with ultrathin highly-nonlinear metasurfaces
28. Gradient nonlinear metasurfaces for continuous phase control
29. Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
30. Electrically-pumped VCSELs using type-II quantum wells for the mid-infrared.
31. Flat nonlinear optics: Efficient frequency conversion in ultrathin nonlinear metasurfaces
32. Towards integration of 1.55-µm n-InP VCSEL on SOI platform
33. Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells
34. Giant nonlinear response of polaritonic metasurfaces coupled to intersubband transitions.
35. Electrically pumped VCSELs using type-II quantum wells for the mid-infrared
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