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A first-principles method was used to explore the influence of tensile strain on the electrical and optical characteristics of Nb-doped MoSe2. The tensile strain has been discovered to have a higher influence on the electrical structure of the Nb-doped MoSe2 system than pure monolayer MoSe2. According to the energy band structure study, the pure monolayer MoSe2 is a direct bandgap semiconductor, but the system doped with Nb instead of Mo atoms is a p-type-doped semiconductor. The bandgap of the Nb-doped MoSe2 system decreases gradually with the increase of tensile strain, but still maintains the p-type semiconductor properties, and the bandgap of the pure monolayer MoSe2 also decreases gradually with the increase of tensile strain. From the density of states analysis, it is found that for the total density of states of the doped system at different tensile strains, it is mainly contributed by the Mo-4d and Se-4p orbitals. The optical properties analysis showed that the doped system under tensile strain had higher absorption coefficient and reflectance peak than the Nb-doped MoSe2 system without tensile strain. Additionally, the doped system showed redshift phenomenon in both the absorption and reflection peaks as the tensile strain increased. [ABSTRACT FROM AUTHOR]

The lack of a bandgap in stanene severely limits its outstanding characteristics in optoelectronic devices. Using first-principles calculations, we systematically investigate the effects of full hydrogenation and shear deformation on the electronic structure and optical properties of stanene. Hydrogenation exerts a remarkable impact on electronic structure of stanene, enabling surface state transition from quasi-metallic to semiconducting. Shear degrades the structural stability of full-hydrogenated stanene (FHstanene). FHstanene exhibits a tunable bandgap of 1.327 eV, which can be further reduced to 0.719 eV through shear deformation. The presence of spin-orbit coupling (SOC) induces band splitting in FHstanene. The maximum optical absorption of FHstanene occurs at 291 nm, while the reflectance peak is observed at 449 nm. The variation in bandgap due to deformation results in a redshift in the absorption coefficient and reflectance, and shear deformation increases the reflectance of FHstanene. These findings broaden the application prospects of stanene in novel nano-optoelectronic devices. [ABSTRACT FROM AUTHOR]

Context: In this paper, the optimum coverage of 4.44% and the optimum adsorption sites were determined for the Be3N2 adsorption system of O atoms at different coverages based on density functional theory. The electronic and optical properties of the model were investigated by applying bending deformation to the model at these coverage and adsorption sites. Adsorption of O atoms disrupts the geometrical symmetry of Be3N2, resulting in orbital rehybridization and lowering its band gap. Bending deformation causes the band gap of the adsorbed O atom structure of Be3N2 to first increase and then decrease, resulting in the modulation of its band gap. With increasing bending deformation, the adsorbed system is redshifts, and the degree of redshift increases with increasing bending deformation. Methods: All calculations in this paper were performed using the first-principles-based CASTEP module of Materials Studio (MS). The generalized gradient approximation (GGA) plane-wave pseudopotential method and the Perdew-Burke-Ernzerhof (PBE) Perdew et al. Phys Rev Lett 77:3865, 1996 generalized functional were used in the geometry optimization and calculation process to calculate the exchange–correlation potential between electrons. The effect of coverage on the electronic and optical properties of the Be3N2-adsorbed O atom system was investigated by adsorbing different numbers of O atoms on a monolayer of Be3N2. The Be3N2 protocell contains two N atoms and three Be atoms with a space community of P6/MMM (No.191). The original cell was expanded 3 times along the direction of the base vectors a and b in the Be3N2 plane to create a 3 × 3 × 1 monolayer Be3N2 supercell system. A vacuum layer of 15 Å is set in the direction of the crystal plane of the vertical monolayer Be3N2 supercell to eliminate interactions between adjacent layers. In the overall energy convergence test of the Be3N2 supercell, the plane wave truncation energy was set to 500 eV, and the energy difference between the calculations given in the literature Reyes-Serrato et al. J Phys Chem Solids 59:743-6, 1998 using 550 eV was less than 0.01 eV, verifying the reliability of the data at a truncation energy of 500 eV. The Monkhorst–Pack special k-point sampling method Monkhorst et al. Phys Rev B 13:5188, 1976 was used in the structural calculations, and the grid was set to 3 × 3 × 1. The geometric optimization parameters are set as follows: the self-consistent field iteration convergence criterion is 2.0 × 10−6 eV, and the iterative accuracy convergence value is not less than 1.0 × 10−5 eV/atom for the total force of each atom and less than 0.03 eV/Å for all atomic forces. In addition the high-symmetry k-point path is taken as Γ(0,0,0) → M(0,0.5,0) → K(− 1/3,2/3,0) → Γ(0,0,0) Chen et al, AIP Adv 8:105105, 2018. [ABSTRACT FROM AUTHOR]

Context: The quasi-metallic properties of stanene limit its prospects in optoelectronic devices. Based on first-principles calculations, a systematic study is conducted on the tuning effects of surface hydrogenation and Al atom doping on the electronic and optical properties of stanene. Surface hydrogenation serves as an ideal way to open the forbidden band of stanene, and Al atom doping further increases hydrogenated stanene (stanane) band gap to 0.460 eV. Deformation has a minor impact on the stability of the stanane-Al structure, while shear strain can effectively modulate the band gap engineering of the doped system, reducing the band gap value from 0.460 to 0.170 eV. Deformation induces a redshift in the absorption peak and reflectance, also slowing down the rate of decrease in the absorption coefficient, and enhancing the peak value of light reflectance, which is positively correlated with the degree of shear strain. These findings hold promise for expanding the potential application of monolayer stanane in semiconductor devices. Methods: All calculations are performed using CASTEP module in Materials Studio based on the density functional theory (DFT). The Perdew–Burke–Ernzerhof (PBE) generalized gradient approximation (GGA) is employed to describe the exchange–correlation energy (Perdew et al., Phys Rev Lett 77(18), 1996). We construct models for both stanene and stanane. The original unit cell of stanene has two Sn atoms, while stanane consists of two Sn atoms and two H atoms, and expand them to a 3 × 3 × 1 supercell with a vacuum layer of 20 Å in height to prevent interlayer coupling. After convergence testing, the plane-wave cutoff energy is set to 450 eV, and the energy convergence threshold is set to 1 × 10−5 eV. The maximum residual stress for each atom is set to 0.01 eV/Å. Brillouin zone sampling is performed using a 6 × 6 × 1 k-point mesh based on the Monkhorst–Pack method (Monkhorst and Pack, Phys Rev B 13(12), 1976). The k-point accuracy of the density of states and optical properties is 9 × 9 × 1. All calculations are performed using the more advanced OTFG ultrasoft pseudopotential, and structural relaxations are performed using supercells to ensure that the model is fully relaxed. We use the HSE06 functional to calculate the energy band structures of stanane-Al deformed to 0%, 4%, and 8%, resulting in band gap values of 1.465 eV, 1.368 eV, and 1.016 eV, respectively. These values are significantly higher than those obtained using the PBE functional (0.460 eV, 0.397 eV, and 0.170 eV). However, the shapes and trends of the band structures obtained from both PBE and HSE06 calculations are similar. Additionally, the calculation time needed by HSE06 is greatly longer than PBE, which exceeds the capabilities of our computer hardware, and cannot support all subsequent calculations. To investigate the influence of deformations on the variation of band gap values and to conserve computational resources, the subsequent calculations in this study use the PBE functional. [ABSTRACT FROM AUTHOR]

In this paper, the structural, electrical and optical effects of WS2 doped with silicon atoms after torsional deformation are investigated using first-principles calculations. First-principles calculations for metal disulfide-WS2. The doping of Si atoms gives WS2 a tunable band gap, and the surface state is successfully transformed from a 2.0 eV band gap to a quasi-metal with a 0.254 eV band gap, and the change of the doped Si atoms causes a redshift in the absorption peak and a blueshift in the reflection peak. The band gap of WS2 can be effectively adjusted by torsional deformation on the basis of Si-doped atoms in the range 0.254–0.052 eV. Calculations of optical properties show that Si-doped WS2 with a torsion angle of 1 0 ∘ has the lowest light absorption peak and Si-doped WS2 with a torsion angle of 8 ∘ has the lowest light reflection peak. This paper opens up new possibilities for designing materials on demand. [ABSTRACT FROM AUTHOR]

Two-dimensional stanene is limited in its application in nanoscale optoelectronic devices due to its zero-bandgap. Based on first-principles calculations of density functional theory, the effects of adsorption of Be atoms with different coverages and torsional deformation on the structure, electricity, and optics of stanene are systematically investigated. The adsorption of Be atoms makes stanene have an adjustable bandgap, the surface state is successfully transformed from a zero-bandgap quasi-metal to a semiconductor with a maximum bandgap of 0.260 eV, the change in Be atom coverage causes a blueshift of the absorption and reflection peaks. Torsional deformation can effectively adjust the bandgap of stanene, which varies from 0.278 eV to 0.110 eV. Torsion enhances the maximum absorption peak of light. Stanene is expected to be a candidate material for designing new nanoelectronic devices. [ABSTRACT FROM AUTHOR]

Context: In this paper, the electronic and optical properties of Cr-doped monolayer MoS2 under uniaxial tensile strain are investigated by first-principle calculations. It is shown that uniaxial tensile strain can significantly change the electronic and optical properties of Cr-doped monolayer MoS2, and the bandgap value of the intrinsic MoS2 system gradually decreases with the increase of tensile strain, while the bandgap value of the Cr-doped MoS2 system is relatively stable. However, when the stretching reaches a certain degree, both the intrinsic and doped systems become metallic. From the analysis of the density of states, it is found that new electronic states and energy levels appear in the intrinsic MoS2 system and all Cr-doped monolayer MoS2 systems with the increase of the tensile strain, but the changes in the density of states diagrams of the Cr-doped monolayer MoS2 system are relatively small, which is mainly attributed to the effect of the Cr-doped atoms. The analysis of optical properties displays that the stretched doped system differs from the intrinsic MoS2 system in terms of dielectric function, absorption and reflection, energy loss function, and refractive index. Our results suggest that uniaxial tensile strain can be used as an effective means to modulate the electronic structure and optical properties of Cr-doped monolayer MoS2. These findings provide a theoretical basis for understanding the optoelectronic properties of MoS2 and its doped systems as well as their applications in optoelectronic devices. Methods: Based on the first principle of density functional theory framework and the CASTEP module in Materials Studio software (Perdew et al. in Phys Rev Lett 77(18):3865–3868, 1996). The structure of Cr atom-doped MoS2 systems and MoS2 systems were optimized using the generalized gradient approximation plane-wave pseudopotential method (GGA) and Perdew-Burke-Ernzerhof (PBE) generalized functions under 3%, 6%, and 9% tensile deformation, and the corresponding formation energy, bond length, electronic structure, and optical properties of the models were analyzed. The Grimme (J Comput Chem 27(15):1787–1799, 2006) vdW correction with 400 eV cutoff was used in Perdew-Burke-Ernzerhof (PBE) functional to optimize the geometry until the forces and energy converged to 0.02 eV/Å and 1.0e-5eV/atom, respectively. For each model structure optimization, the K-point grid was assumed to be 4×4×1, using the Monkhorst-Pack special K-point sampling method. After the MoS2 supercell convergence test, the plane-wave truncation energy was chosen to be 400 eV. Following geometric optimization, the iterative accuracy converged to no less than 1.0×10−5 eV/atom for total atomic energy and less than 0.02 eV/Å for all atomic forces. We created a vacuum layer of 18 Å along the Z-axis to prevent the impact of periodic boundary conditions and weak van der Waals forces between layers on the monolayer MoS2. In this paper, a total of 27 atoms were used for the 3×3×1 supercell MoS2 system, which consists of 18 S atoms and 9 Mo atoms. [ABSTRACT FROM AUTHOR]

[Display omitted] • Hydrogenation transforms stanene from a zero-bandgap quasi-metal to a direct bandgap semiconductor. • Shear deformation can effectively tune the bandgap of stanane. • The shear deformation of the stanane structure causes a red shift of the absorption and reflection peaks. Two-dimensional stanene is limited in its application in nanoscale optoelectronic devices due to its zero-bandgap. The effects of shear deformation on the structure, electricity and optics of stanane(full-hydrogenated stanene) are systematically investigated based on the first-principles calculation of density functional theory. Results show that hydrogenation is an effective means to open the band gap of stanene. The structural stability of stanane is reduced by shear deformation, the band gap is sensitive to shear deformation with a variation in the range of 0.421–0.023 eV. The calculations of optical properties show that stanane reaches the maximum optical absorption at the wavelength of 330 nm, and the light reflectivity reaches the peak at the wavelength of 360 nm. Shear deformation causes a red shift of the absorption and reflection peaks. Stanane is expected to be a candidate material for designing new nanoelectronic devices. [ABSTRACT FROM AUTHOR]

Context: In this paper, the optimum coverage of 4.44% and the optimum adsorption sites were determined for the Be3N2 adsorption system of O atoms at different coverages based on density functional theory. The electronic and optical properties of the model were investigated by applying bending deformation to the model at these coverage and adsorption sites. Adsorption of O atoms disrupts the geometrical symmetry of Be3N2, resulting in orbital rehybridization and lowering its band gap. Bending deformation causes the band gap of the adsorbed O atom structure of Be3N2 to first increase and then decrease, resulting in the modulation of its band gap. With increasing bending deformation, the adsorbed system is redshifts, and the degree of redshift increases with increasing bending deformation. Methods: All calculations in this paper were performed using the first-principles-based CASTEP module of Materials Studio (MS). The generalized gradient approximation (GGA) plane-wave pseudopotential method and the Perdew-Burke-Ernzerhof (PBE) Perdew et al. Phys Rev Lett 77:3865, 1996 generalized functional were used in the geometry optimization and calculation process to calculate the exchange–correlation potential between electrons. The effect of coverage on the electronic and optical properties of the Be3N2-adsorbed O atom system was investigated by adsorbing different numbers of O atoms on a monolayer of Be3N2. The Be3N2 protocell contains two N atoms and three Be atoms with a space community of P6/MMM (No.191). The original cell was expanded 3 times along the direction of the base vectors a and b in the Be3N2 plane to create a 3 × 3 × 1 monolayer Be3N2 supercell system. A vacuum layer of 15 Å is set in the direction of the crystal plane of the vertical monolayer Be3N2 supercell to eliminate interactions between adjacent layers. In the overall energy convergence test of the Be3N2 supercell, the plane wave truncation energy was set to 500 eV, and the energy difference between the calculations given in the literature Reyes-Serrato et al. J Phys Chem Solids 59:743-6, 1998 using 550 eV was less than 0.01 eV, verifying the reliability of the data at a truncation energy of 500 eV. The Monkhorst–Pack special k-point sampling method Monkhorst et al. Phys Rev B 13:5188, 1976 was used in the structural calculations, and the grid was set to 3 × 3 × 1. The geometric optimization parameters are set as follows: the self-consistent field iteration convergence criterion is 2.0 × 10−6 eV, and the iterative accuracy convergence value is not less than 1.0 × 10−5 eV/atom for the total force of each atom and less than 0.03 eV/Å for all atomic forces. In addition the high-symmetry k-point path is taken as Γ(0,0,0) → M(0,0.5,0) → K(− 1/3,2/3,0) → Γ(0,0,0) Chen et al, AIP Adv 8:105105, 2018. [ABSTRACT FROM AUTHOR]

In this paper, the structural, electrical and optical effects of WS2 doped with silicon atoms after torsional deformation are investigated using first-principles calculations. First-principles calculations for metal disulfide-WS2. The doping of Si atoms gives WS2 a tunable band gap, and the surface state is successfully transformed from a 2.0 eV band gap to a quasi-metal with a 0.254 eV band gap, and the change of the doped Si atoms causes a redshift in the absorption peak and a blueshift in the reflection peak. The band gap of WS2 can be effectively adjusted by torsional deformation on the basis of Si-doped atoms in the range 0.254–0.052 eV. Calculations of optical properties show that Si-doped WS2 with a torsion angle of 1 0 ∘ has the lowest light absorption peak and Si-doped WS2 with a torsion angle of 8 ∘ has the lowest light reflection peak. This paper opens up new possibilities for designing materials on demand. [ABSTRACT FROM AUTHOR]

Context: In this paper, the electronic and optical properties of Cr-doped monolayer MoS2 under uniaxial tensile strain are investigated by first-principle calculations. It is shown that uniaxial tensile strain can significantly change the electronic and optical properties of Cr-doped monolayer MoS2, and the bandgap value of the intrinsic MoS2 system gradually decreases with the increase of tensile strain, while the bandgap value of the Cr-doped MoS2 system is relatively stable. However, when the stretching reaches a certain degree, both the intrinsic and doped systems become metallic. From the analysis of the density of states, it is found that new electronic states and energy levels appear in the intrinsic MoS2 system and all Cr-doped monolayer MoS2 systems with the increase of the tensile strain, but the changes in the density of states diagrams of the Cr-doped monolayer MoS2 system are relatively small, which is mainly attributed to the effect of the Cr-doped atoms. The analysis of optical properties displays that the stretched doped system differs from the intrinsic MoS2 system in terms of dielectric function, absorption and reflection, energy loss function, and refractive index. Our results suggest that uniaxial tensile strain can be used as an effective means to modulate the electronic structure and optical properties of Cr-doped monolayer MoS2. These findings provide a theoretical basis for understanding the optoelectronic properties of MoS2 and its doped systems as well as their applications in optoelectronic devices. Methods: Based on the first principle of density functional theory framework and the CASTEP module in Materials Studio software (Perdew et al. in Phys Rev Lett 77(18):3865–3868, 1996). The structure of Cr atom-doped MoS2 systems and MoS2 systems were optimized using the generalized gradient approximation plane-wave pseudopotential method (GGA) and Perdew-Burke-Ernzerhof (PBE) generalized functions under 3%, 6%, and 9% tensile deformation, and the corresponding formation energy, bond length, electronic structure, and optical properties of the models were analyzed. The Grimme (J Comput Chem 27(15):1787–1799, 2006) vdW correction with 400 eV cutoff was used in Perdew-Burke-Ernzerhof (PBE) functional to optimize the geometry until the forces and energy converged to 0.02 eV/Å and 1.0e-5eV/atom, respectively. For each model structure optimization, the K-point grid was assumed to be 4×4×1, using the Monkhorst-Pack special K-point sampling method. After the MoS2 supercell convergence test, the plane-wave truncation energy was chosen to be 400 eV. Following geometric optimization, the iterative accuracy converged to no less than 1.0×10−5 eV/atom for total atomic energy and less than 0.02 eV/Å for all atomic forces. We created a vacuum layer of 18 Å along the Z-axis to prevent the impact of periodic boundary conditions and weak van der Waals forces between layers on the monolayer MoS2. In this paper, a total of 27 atoms were used for the 3×3×1 supercell MoS2 system, which consists of 18 S atoms and 9 Mo atoms. [ABSTRACT FROM AUTHOR]