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The design and technology for the fabrication of an asymmetric stepped InAs/InAs1 –ySby/InAsSbP heterostructure with an ultimate InSb content (up to y = 0.17) in the narrow-gap active region by vapor-phase epitaxy from metal-organic compounds are developed. The electroluminescence characteristics of long-wavelength LEDs based on the proposed heterostructure, which emits in the spectral range of 4.6–5.3 μm, are studied. A linear decrease in the quantum efficiency of the electroluminescence with increasing InSb content in the active layer of the LEDs obtained is revealed. The advantage of using the asymmetric heterostructure for fabricating LEDs with a working wavelength of more than 4.5 μm is shown. [ABSTRACT FROM AUTHOR]

Uniform arrays of the InSb quantum dots with a surface density of nQD = 2 × 109 cm–2 were obtained by liquid phase epitaxy on a matrix layer based on a multicomponent InGaAsSb solid solution lattice-matched with the GaSb substrate. The change in the composition of the cationic part of the matrix by using the epitaxial matrix layer allowed to lower the temperature of the epitaxy to T = 430°C and determined the shape of a typical InSb quantum dot in the form of a truncated cone with average values of height h = 3 nm and diameter d = 30 nm, which corresponded to the aspect ratio L = h/d = 0.1. [ABSTRACT FROM AUTHOR]