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Mn‐doped (1‐x)Bi0.5(Na0.8K0.2)0.5TiO3‐xBiAlO3 (Mn:BNKT‐xBA) thin films were synthesized on lanthanum nickelate‐coated silicon substrates by sol‐gel method. The second phase issue of the film can be effectively addressed by optimizing the substrate, and the maximum polarization and breakdown strength can be increased by introducing the proper amount of Al3+, which is advantageous for the film for energy storage. The results have shown that the Mn:BNKT‐0.03BA film exhibits superior ferroelectric properties (with remanent polarization (Pr) of 23.72 µC/cm2, maximum polarization (Pmax) of 75.37 µC/cm2), which could be an excellent candidate for ferroelectric thin film capacitors. [ABSTRACT FROM AUTHOR]

In recent years, the development of environmentally friendly, lead-free ferroelectric films with prominent electrostrictive effects have been a key area of focus due to their potential applications in micro-actuators, sensors, and transducers for advanced microelectromechanical systems (MEMS). This work investigated the enhanced electrostrictive effect in lead-free sodium bismuth titanate-based relaxor ferroelectric films. The films, composed of (Bi0.5Na0.5)0.8−xBaxSr0.2TiO3 (BNBST, x = 0.02, 0.06, and 0.11), with thickness around 1 μm, were prepared using a sol-gel method on Pt/TiO2/SiO2/Si substrates. By varying the Ba2+ content, the crystal structure, morphology, and electrical properties, including dielectric, ferroelectric, strain, and electromechanical performance, were investigated. The films exhibited a single pseudocubic structure without preferred orientation. A remarkable strain response (S > 0.24%) was obtained in the films (x = 0.02, 0.06) with the coexistence of nonergodic and ergodic relaxor phases. Further, in the x = 0.11 thick films with an ergodic relaxor state, an ultrahigh electrostrictive coefficient Q of 0.32 m4/C2 was achieved. These findings highlight the potential of BNBST films as high-performance, environmentally friendly electrostrictive films for advanced microelectromechanical systems (MEMS) and electronic devices. [ABSTRACT FROM AUTHOR]

Dielectric ceramic capacitors with ultrahigh power densities are fundamental to modern electrical devices. Nonetheless, the poor energy density confined to the low breakdown strength is a long-standing bottleneck in developing desirable dielectric materials for practical applications. In this instance, we present a high-entropy tungsten bronze-type relaxor ferroelectric achieved through an equimolar-ratio element design, which realizes a giant recoverable energy density of 11.0 J·cm−3 and a high efficiency of 81.9%. Moreover, the atomic-scale microstructural study confirms that the excellent comprehensive energy storage performance is attributed to the increased atomic-scale compositional heterogeneity from high configuration entropy, which modulates the relaxor features as well as induces lattice distortion, resulting in reduced polarization hysteresis and enhanced breakdown endurance. This study provides evidence that developing high-entropy relaxor ferroelectric material via equimolar-ratio element design is an effective strategy for achieving ultrahigh energy storage characteristics. Our results also uncover the immense potential of tetragonal tungsten bronze-type materials for advanced energy storage applications. The authors present an equimolar-ratio element high-entropy strategy for designing high-performance dielectric ceramics and uncover the immense potential of tetragonal tungsten bronze-type materials for advanced energy storage applications. [ABSTRACT FROM AUTHOR]

PbZrO3 has been broadly considered as a prototypical antiferroelectric material for high-power energy storage. A recent theoretical study suggests that the ground state of PbZrO3 is threefold-modulated ferrielectric, which challenges the generally accepted antiferroelectric configuration. However, such a novel ferrielectric phase was predicted only to be accessible at low temperatures. Here, we successfully achieve the room-temperature construction of the strongly competing ferrielectric and antiferroelectric state by strain-mediated phase separation in PbZrO3/SrTiO3 thin film. We demonstrate that the phase separation occurs spontaneously in quasi-periodic stripe-like patterns under a compressive misfit strain and can be tailored by varying the film thickness. The ferrielectric phase strikingly exhibitsa threefold modulation period with a nearly up-up-down configuration, which could be stabilized and manipulated by the formation and evolution of interfacial defects under applied strain. The present results construct a fertile ground for further exploring the physical properties and applications based on the novel ferrielectric phase. There is a desire to know how the threefold ferrielectric coexists with the antiferroelectric phase. Here, the authors realize a threefold-modulated ferrielectric phase regulated by strain-mediated phase separation in PbZrO3 thin film. [ABSTRACT FROM AUTHOR]

Bismuth layer structured ferroelectrics (BLSFs) have drawn much attention due to their great potential for high‐temperature applications. It is generally accepted that BLSFs with small orthorhombic distortion should have low TC. In this paper, we report an anomalous example Li0.5Bi2.5Nb2O9 (LBN), which has small orthorhombic distortion but very high TC. LBN shows the highest TC (834°C) among currently reported prototype alkali‐metal BLSFs, which is attributed to its small tolerance factor. However, the refinement result reveals that LBN is orthorhombic with the space group of A21am, and the orthorhombic distortion of LBN a/b is merely 1.0019. The measurement of piezoelectric coefficient (d33 ∼ 6 pC/N) and observation of striped domain structure confirm the ferroelectricity nature of LBN. This work deepens our understanding of BLSFs and may lead to the finding of more novel BLSFs with high performance. [ABSTRACT FROM AUTHOR]