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The wireless and ambulatory posture monitoring system monitors the movement and posture change of the human body with respect to the g-line. It is crucial to monitor the posture health of the ophthalmologist who spends a prolonged period on the static sitting posture while operating on the slit lamp which leads to any painful experience. The motivation of the proposed system is to improve the ergonomics of the ophthalmologist on their working environment and reduce any occupational potential hazard which may prompt Work-Related Musculoskeletal Disorders (WMSDs). The proposed system also induced a wireless system by using XBee wireless units to reduce the use of the wire that may tangle on the study subject which causes any uncomfortable experience to the study subject during the human trial. Inertial Measurement Unit (IMU) sensor which consists of an Accelerometer, a Gyroscope and a Magnetometer is used to measure the angle of deviation of the body segment with respect to the g-line. The data is tabulated and presented into the graphical method to identify and extract the properties of the graph on each different static sitting posture which later are used for posture recognition.

n this research, pure titanium dioxide (TiO2) and doped TiO2 thin film layers were prepared using the spin coating method of titanium(IV) butoxide on a glass substrate from the sol–gel method and annealed at 500 °C. The effects on the structural and chemical properties of these thin films were then investigated. The metal doped TiO2 thin film which exists as trivalent electrons consists of aluminium (Al), yttrium (Y) and gadolinium (Gd). The anatase phase of the thin films was observed and it was found that the crystal size became smaller when the concentration of thin film increased. The grain size was found to be 0.487 to 13.925 nm. The types of surface morphologies of the thin films were nanoporous, with a little agglomeration and smaller nanoparticles corresponding to Al doped TiO2, Y doped TiO2 and Gd doped TiO2, respectively. The trivalent doping concentration of the thin films increased with a rising of thickness of the thin film. This can contribute to the defects that give advantages to the thin film when the mobility of the hole carriers is high and the electrons of Ti can move easily. Thus, Ti3+ existed as a defect state in the metal doped TiO2 thin film based on lattice distortion with a faster growth thin film that encouraged the formation of a higher level of oxygen vacancy defects.