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In this paper, structural properties such as structure parameters, energy band structure, the density of state, and charge density of LaGaO3 are calculated from the cubic phase. The calculations have been performed using the pseudopotential and a plane wave method in the framework of density functional theory (DFT) with generalized gradient approximation (GGA) by the Quantum Espresso package. The results are in good agreement with the results of others.

Bismuth ferrite belongs to magnetoelectric compounds which join, in the same crystal phase, two mutually excluding order parameters like magnetic and ferroelectric. In case of BiFeO3 both of these transition temperatures are considerably above room temperature what is important form the point of view of applications. In this paper electronic band structure calculations are presented. In the calculations, hybrid exchange interaction potential is applied, which gives the possibility to obtain correct insulating character of the compound without application of arbitrary Hubbard U parameter. The calculated densities of electronic states and magnetic properties are described. [ABSTRACT FROM AUTHOR]

In the quest to enhance the mechanical properties of CuP alloys, particularly focusing on the Cu3P phase, this study introduces a comprehensive investigation into the effects of various alloying elements on the alloy's performance. In this paper, the first principle of density universal function theory and the projection-enhanced wave method under VASP 5.4.4 software are used to recalculate the lattice constants, evaluate the lattice stability, and explore the mechanical properties of selected doped elements such as In, Si, V, Al, Bi, Nb, Sc, Ta, Ti, Y and Zr, including shear, stiffness, compression, and plasticity. The investigation reveals that strategic doping with In and Si significantly enhances shear resistance and stiffness, while V addition notably augments compressive resistance. Furthermore, incorporating Al, Bi, Nb, Sc, Ta, Ti, V, Y, and Zr has substantially improved plasticity, indicating a broad spectrum of mechanical enhancement through precise alloying. Crucially, the validation of our computational models is demonstrated through hardness experiments on Si and Sn-doped specimens, corroborating the theoretical predictions. Additionally, a meticulous analysis of the states' density further confirms our computational approach's accuracy and reliability. This study highlights the potential of targeted alloying to tailor the mechanical properties of Cu3P alloys and establishes a robust theoretical framework for predicting the effects of doping in metallic alloys. The findings presented herein offer valuable insights and a novel perspective on material design and optimization, marking a significant stride toward developing advanced materials with customized mechanical properties. [ABSTRACT FROM AUTHOR]

Context: The key factor in designing heat-resistant energetic materials is their thermal sensitivity. Further research and prediction of thermal sensitivity remains a great challenge for us. This study is based on first-principles calculations and establishes a theoretical model, which comprehensively considers band gap, density of states, and Young's modulus to obtain a empirical parameter Ψ. A quantitative relationship was established between the new parameter and the thermal decomposition temperature. The value of Ψ is calculated for 10 energetic materials and is found to have a strong correlation with the experimental thermal decomposition temperature. This further proves the reliability of our model. Specifically, the larger the value of Ψ, the higher the thermal decomposition temperature, and the more stable the energetic material will be. Therefore, to some extent, we can use the new parameter Ψ calculated by the model to predict thermal sensitivity. Methods: Based on first-principles, this paper used the Cambridge Serial Total Energy Package (CASTEP) module of Materials Studio (MS) for calculations. The Perdew-Burke-Ernzerhof (PBE) functionals in Generalized Gradient Approximation (GGA) method as well as the Grimme dispersion correction was used in this paper. [ABSTRACT FROM AUTHOR]

By systematically varying the boron concentration near the oxide/4H–SiC interface within a specifically designed boron-diffusion layer oxide structure, this paper explores the influence of boron concentration on interface state density and near-interface trap density in 4H–SiC MOS capacitors. Additionally, the effect of boron near the oxide/4H–SiC interface on device stability under elevated temperature conditions was examined. The boron species were introduced into the SiO2/4H–SiC interface by spin coating followed by annealing, whose temperature controls the amount of boron present in the near interface region. It is suggested that a higher concentration of boron leads to a better trap passivation effect while preserving the stability of flat band voltage. [ABSTRACT FROM AUTHOR]

We examine the impact of temperature (T) on the Seebeck coefficient S, i.e., the T dependence of S for a single-component molecular conductor [Pd(dddt)2] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) with a half-filled band, where the coefficient is obtained from a ratio of the thermal conductivity to the electrical conductivity. The present paper demonstrates theoretically the novel result of large anisotropy in the Seebeck coefficient components of three-dimensional Dirac electrons in a molecular conductor. The conductor exhibits a nodal line with the energy variation around the chemical potential and provides the density of states (DOS) with a minimum. Using a threedimensional tight-binding (TB) model in the presence of both impurity and electron–phonon (e–p) scatterings, we study the Seebeck coefficient Sy for the molecular stacking and the most conducting direction. The impact of T on Sy exhibits a sign change, where Sy > 0 with a maximum at high temperatures and Sy < 0 with a minimum at low temperatures. The T dependence of Sy suggests that the contribution from the conduction (valence) band is dominant at low (high) temperatures. Further, it is shown that the the Seebeck coefficient components for perpendicular directions Sx and Sz are much smaller than Sy and present no sign change, in contrast to Sy. These results are analyzed in terms of the spectral conductivity as a function of the energy ϵ close to the chemical potential μ. [ABSTRACT FROM AUTHOR]

Recent studies show that zinc oxide (ZnO) nanostructures have promising potential as an absorbing material. In order to improve the optoelectronic properties of the initial system, this paper considers the process of adsorbing multilayer graphene-like ZnO onto a Si (111) surface. The density of electron states for two- and three-layer graphene-like zinc oxide on the Si (111) surface was obtained using the Vienna ab-initio simulation package by the DFT method. A computer model of graphene-like Zinc oxide on a Si (111)-surface was created using the DFT+U approach. One-, two- and three-plane-thick graphene-zinc oxide were deposited on the substrate. An isolated cluster of Zn3O3 was also considered. The compatibility of g-ZnO with the S (100) substrate was tested, and the energetics of deposition were calculated. This study demonstrates that, regardless of the possible configuration of the adsorbing layers, the Si/ZnO structure remains stable at the interface. Calculations indicate that, in combination with lower formation energies, wurtzite-type structures turn out to be more stable and, compared to sphalerite-type structures, wurtzite-type structures form longer interlayers and shorter interplanar distances. It has been shown that during the deposition of the third layer, the growth of a wurtzite-type structure becomes exothermic. Thus, these findings suggest a predictable relationship between the application method and the number of layers, implying that the synthesis process can be modified. Consequently, we believe that such interfaces can be obtained through experimental synthesis. [ABSTRACT FROM AUTHOR]

The contents of alkali and alkaline earth metals are higher in Zhundong coal, and there are serious problems of slagging and fouling during the combustion process. Therefore, it is of great significance to reveal the mechanism of slagging and fouling in the boiler of Zhundong coal. In this paper, first-principle calculations based on density functional theory are used to study the competition mechanism of alkaline metal oxides during the combustion process in Zhundong coal by establishing the Na2O(110)/CaO(100)-SiO2(100) double-layer interface model. The results show that the bond lengths of the surface of Na2O(110) and CaO(100) with SiO2(100) after adsorption were generally lengthened and the value of bond population became smaller, which formed a stable binding energy during the reaction. The electron loss of Na is 0.05 e, the electron loss of Ca is 0.03 e, and the electron loss of Na2O is greater than that of CaO. The charge transfer on the surface of Na2O with SiO2 is obviously higher than that of CaO and the orbital hybridization on the surface of CaO with SiO2 is weaker than that on the surfaces of Na2O with SiO2. Na2O is easier to react with SiO2 than CaO. The adsorption energies on the surface of Na2O and CaO with SiO2 are −5.56 eV and −0.72 eV, respectively. The adsorption energy of Na2O is higher than that of CaO, indicating that Na2O is more prone to adsorption reactions and formation of Na-containing minerals and other minerals, resulting in more serious slagging. In addition, the XRD analyses at different temperatures showed that Na-containing compounds appeared before Ca-containing ones, and the reaction activity of Na2O is stronger than that of CaO in the reaction process. The experimental results have good agreement with the calculation results. This provides strong evidence to reveal the slagging and fouling of Zhundong coal. [ABSTRACT FROM AUTHOR]

The modern textbook analysis of the thermal state of photons inside a three-dimensional reflective cavity is based on the three quantum numbers that characterize photon's energy eigenvalues coming out when the boundary conditions are imposed. The crucial passage from the quantum numbers to the continuous frequency is operated by introducing a three-dimensional continuous version of the three discrete quantum numbers, which leads to the energy spectral density and to the entropy spectral density. This standard analysis obscures the role of the multiplicity of energy eigenvalues associated to the same eigenfrequency. In this paper we review the past derivations of Bose's entropy spectral density and present a new analysis of energy spectral density and entropy spectral density based on the multiplicity of energy eigenvalues. Our analysis explicitly defines the eigenfrequency distribution of energy and entropy and uses it as a starting point for the passage from the discrete eigenfrequencies to the continuous frequency. [ABSTRACT FROM AUTHOR]

The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 × 1013/cm2, and the capture cross section is σ = 8.5 × 1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu–Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test. [ABSTRACT FROM AUTHOR]

In object-tracking and state-estimation problems, ambiguous evidence such as imprecise measurements and the absence of detections can contain valuable information and thus be leveraged to further refine the probabilistic belief state. In particular, knowledge of a sensor's bounded field of view (FoV) can be exploited to incorporate evidence of where an object was not observed. This paper presents a systematic approach for incorporating knowledge of the FoV geometry, position, and object inclusion/exclusion evidence into object state densities and random finite set multiobject cardinality distributions. The resulting state estimation problem is nonlinear and solved using a new Gaussian mixture approximation based on recursive component splitting. Based on this approximation, a novel Gaussian mixture Bernoulli filter for imprecise measurements is derived and demonstrated in a tracking problem using only natural language statements as inputs. This paper also considers the relationship between bounded FoVs and cardinality distributions for a representative selection of multiobject distributions, which can be used for sensor planning, as is demonstrated through a problem involving a multi-Bernoulli process with up to 100 potential objects. [ABSTRACT FROM AUTHOR]

This study demonstrates the effect of nitrogen doping on the surface state densities (Nss) of monolayer MoS2 and its effect on the responsivity and the response time of the photodetector. Our experimental results shows that by doping monolayer MoS2 by nitrogen, the surface state (Nss) increases thereby increasing responsivity. The mathematical model included in the paper supports the relation of photocurrent gain and its dependency on trap level which states that the increasing the trap density increases the photocurrent gain and the same is observed experimentally. The experimental results at room temperature revealed that nitrogen doped MoS2 have a high NSS of 1.63 X 1013 states/m2/eV compared to undoped MoS2 of 4.2 x 1012 states/m2/eV. The increase in Nss in turn is the cause for rise in trap states which eventually increases the value of photo responsivity from 65.12 A/W (undoped MoS2) to 606.3 A/W (nitrogen doped MoS2). The response time calculated for undoped MoS2 was 0.85 sec and for doped MoS2 was 0.35 sec. Finally, to verify the dependence of surface states on the responsivity, the surface states were varied by varying temperature and it was observed that upon increment in temperature, the surface states decreases which causes the responsivity values also to decrease. [ABSTRACT FROM AUTHOR]

The complex theoretical analysis of the density of states, band structures, and Fermi surfaces, based on predictions of the density functional theory methods, unveils the unique electronic properties of the LaZn1−xBi2 system. In this paper, the Zn vacancies (for x = 0.5 ) were modeled using a modified unit cell of lower symmetry than that for a fully stoichiometric one (for x = 0 ). The existence of several Dirac-like features in the electronic band structures was found. Some of them were found to be intimately associated with the nonsymmorphic symmetry of the system, and these were investigated in detail. The calculated Fermi surface shapes, as well as the Fermi velocity values (up to ∼1.2 × 10 6 m/s), are in good agreement with other analogous square-net Dirac semimetals. The combination of charge-carrier uncompensation, relatively small band splitting, and the tolerance factor for square-net semimetals t ≤ 0.95 for LaZn0.5Bi2, constitutes a very promising indicator of the topological features of this system, warranting further experimental studies. [ABSTRACT FROM AUTHOR]

CO and HCHO are the main pyrolysis gases in long-term running dry-type reactors, and thus the diagnosis of thermal insulation faults inside such devices can be realized by sensing these gases. In this paper, a single Au atom-decorated WS2 (Au-WS2) monolayer is proposed as an original sensing material for CO or HCHO detection to evaluate the operation status of dry-type reactors. It was found that the Au atom prefers to be adsorbed at the top of the S atom of the pristine WS2 monolayer, wherein the binding force is calculated as −3.12 eV. The Au-WS2 monolayer behaves by chemisorption upon the introduction of CO and HCHO molecules, with the adsorption energies of −0.82 and −1.01 eV, respectively. The charge density difference was used to analyze the charge-transfer and bonding behaviors in the gas adsorptions, and the analysis of density of state as well as band structure indicate gas-sensing mechanisms. As calculated, the sensing responses of the Au-WS2 monolayer upon CO and HCHO molecule introduction were 58.7% and −74.4%, with recovery times of 0.01 s and 11.86 s, respectively. These findings reveal the favorable potential of the Au-WS2 monolayer to be a reusable and room-temperature sensing candidate for CO and HCHO detections. Moreover, the work function of the Au-WS2 monolayer was decreased by 13.0% after the adsorption of CO molecules, while it increased by 1.2% after the adsorption of HCHO molecules, which implies its possibility to be a work-function-based gas sensor for CO detection. This theoretical report paves the way for further investigations into WS2-based gas sensors in some other fields, and it is our hope that our findings can stimulate more reports on novel gas-sensing materials for application in evaluating the operation conditions of dry-type reactors. [ABSTRACT FROM AUTHOR]

Detecting the decomposition components of SF6 insulating gas is recognized as an effective means to monitor the operating status of the SF6 insulating switch. In this paper, the adsorption characteristics of a new two-dimensional material GeSe for five SF6 decomposition gases (SO2, SOF2, SO2F2, H2S and HF) are reported by first-principles simulation. Through the analysis of the change of energy band structure, density of states distribution, and gas desorption time, it is found that GeSe has the potential as a gas-sensitive material for the selective detection of SO2F2, and the computational work in this paper provides theoretical guidance for the development of new gas-sensitive sensors applied in monitoring SF6 insulated switches. [ABSTRACT FROM AUTHOR]

Using the first-principles calculation, two doping two-dimensional (2D) BN (boron nitride) polymorphs are constructed in this work. The two doping 2D BN polymorphs B5N6Al and B5N6C sheets are thermally stable under 500 K. All the B6N6, B5N6Al, and B5N6C sheets are semiconductor materials with indirect band gaps on the basis of a hybrid functional. The anisotropic calculation results indicate that Young's modulus (E) and Poisson's ratio (v) of the B6N6, B5N6Al, and B5N6C sheets are anisotropic in the xy plane. In addition, the magnetic properties of the B6N6, B5N6Al, and B5N6C sheets have also been investigated. According to the calculation of the magnetic properties, B6N6 sheet does not exhibit magnetism, while it shows weak magnetism after doping carbon atom to the BN sheet. This paper explores the influence mechanism of doping different atoms on the basic physical properties of two-dimensional BN sheets. It not only constructs a relationship between structure and performance but also provides theoretical support for the performance regulation of BN materials. [ABSTRACT FROM AUTHOR]

In this paper, we investigated an optimal investment problem of a defined contribution (DC) pension plan under a joint Value-at-Risk (VaR) and an expected shortfall (ES) constraint. By using a martingale method, we transformed a dynamic optimization problem to a static pointwise optimization problem and derived the closed-form representations of the optimal wealth and portfolio processes in terms of the state price density. Numerical results showed that in comparison to only an ES constraint or a VaR constraint, the joint VaR-ES constraint can not only improve risk management for the bad economic states but also lower the volatility of the optimal terminal wealth. [ABSTRACT FROM AUTHOR]

Ultrahigh-energy density (UHED) states greater than 1 Gbar pressure are typically observed under extreme conditions, such as in the core of an inertial confinement fusion implosion. A novel alternative approach for generating volumetric UHED states is to use nanowire arrays irradiated with a femtosecond ultrahigh-intensity laser. In this paper, we present an experimental investigation on laser absorption and energy transport in nanowire arrays irradiated with a picosecond kilojoule petawatt laser. The laser–target interactions were studied by measuring the x-ray emission and escaping hot electrons from a bare Cu foil and a foil with a nanowire array grown on its surface. The measured Cu-Kα and He-α emissions from the nanowire array were higher than those from the flat foil. In addition, hot electrons observed from the front surface of the nanowire array were enhanced. On the other hand, despite the stronger Kα emission from the nanowire array and the enhancement of hot electrons escaping from the front surface of the nanowire array, the number of hot electrons observed from the rear side of the flat foil target was slightly lower than that of the flat foil. A comparison of the experimental results with the results of a two-dimensional particle-in-cell simulation code suggested that the magnetic fields generated around the periodic nanowire array trap hot electrons, improving the electron-to-target energy coupling and efficiently producing UHED states. [ABSTRACT FROM AUTHOR]

Forming a hetero-interface is a materials-design strategy that can access an astronomically large phase space. However, the immense phase space necessitates a high-throughput approach for an optimal interface design. Here we introduce a high-throughput computational framework, InterMatch, for efficiently predicting charge transfer, strain, and superlattice structure of an interface by leveraging the databases of individual bulk materials. Specifically, the algorithm reads in the lattice vectors, density of states, and the stiffness tensors for each material in their isolated form from the Materials Project. From these bulk properties, InterMatch estimates the interfacial properties. We benchmark InterMatch predictions for the charge transfer against experimental measurements and supercell density-functional theory calculations. We then use InterMatch to predict promising interface candidates for doping transition metal dichalcogenide MoSe2. Finally, we explain experimental observation of factor of 10 variation in the supercell periodicity within a few microns in graphene/α-RuCl3 by exploring low energy superlattice structures as a function of twist angle using InterMatch. We anticipate our open-source InterMatch algorithm accelerating and guiding ever-growing interfacial design efforts. Moreover, the interface database resulting from the InterMatch searches presented in this paper can be readily accessed online. Predicting properties at the interface of materials is crucial for advanced materials design. Here, the authors introduce a high-throughput computational framework, InterMatch, for predicting several properties of an interface by using the databases of individual bulk materials. [ABSTRACT FROM AUTHOR]

The structural stability, electrical properties (energy band structure, density of states) and optical properties of AlAs/InP/CdS multilayer heterojunctions have been systematically investigated using first-principles calculations based on density functional theory. The A-type structure in this paper is the most stable, with a direct band gap of 0.477 eV. The heterojunction is strongly bonded due to the aggregation of electrons among all three layers of atoms, the formation of van der Waals forces between the atoms and the formation of orbital hybridization among some of the atoms. The optoelectronic properties of multilayer heterojunctions are superior to those of single layers. AlAs/InP/CdS multilayer heterojunctions have high absorption peaks in the UV and visible regions and also have good absorption capability in the infrared. The AlAs/InP/CdS multilayer heterojunction has a stable structure and excellent optoelectronic properties, and has great potential and broad application prospects in the fields of visible light absorption, photocatalysis, infrared light and ultraviolet light detection. [ABSTRACT FROM AUTHOR]

In this paper, the effects of carbon nanotube defects and a copper surface oxide layer on a carbon nanotube–copper interface were studied via first-principles. A defect-free CNT-Cu interface, Stone–Wales defect CNT-Cu interface, single-hole and double-hole defect CNT-Cu interface, and Cu2O-Cu interface were simulated and calculated. By simulating the differential charge density, atomic population, bond population and density of states of the interface model, the effects of various defects on the interface bonding and electrical conductivity of the composites during the preparation of the CNT-reinforced copper matrix composites were analyzed, which provided theoretical guidance for the preparation of CNT/Cu composites. After that, copper matrix composites with different CNT defect contents were prepared via different rolling deformation processes. Their hardness and electrical conductivity were tested, and the results were consistent with the results obtained via the first-principles calculations. [ABSTRACT FROM AUTHOR]

This paper develops two-filter particle smoothing (TFPS) algorithms for the nonlinear fixed-interval smoothing problem of one generalized hidden Markov model (GHMM), where the current observation depends not only on the current state, but also on one-step previous state. Firstly, by Bayesian approach, the two-filter smoothing (TFS) formula for GHMM is established to calculate smoothing densities. In this TFS formula, the backward information prediction density is generally not a density of the state. This results in a difficulty that the normal sequential Monte Carlo (SMC) sampling technique cannot be directly applied to design corresponding TFPS algorithms based on the TFS formula. To solve this difficulty, a generalized TFS formula for GHMM is then proposed by introducing a sequence of artificial densities. By combining this generalized TFS formula, SMC, and the auxiliary variable sampling technique, a basic auxiliary TFPS (ATFPS) algorithm with quadratic computational complexity is proposed, and a simplified ATFPS algorithm with linear computational complexity is further developed. Finally, the effectiveness and superiority of the two proposed ATFPS algorithms for GHMM are verified via simulation examples and real experimental data. • It studies a generalized HMM where observation depends on two-step states. • Two-filter smoothing formula and its generalization are established. • Auxiliary variable sampling technique is applied to draw samples. • It proposes two particle smoothing algorithms by using sequential Monte Carlo. [ABSTRACT FROM AUTHOR]

The option butterfly portfolio is the commonly option arbitrage strategy. In reality, because the distribution of the option state price density (SPD) function is not normal and unknown, so the nonparametric deep learning methods to estimate option butterfly portfolio returns are proposed. This paper constructs the single-index nonparametric option pricing model which contains multiple influencing factors and presents the nonparametric estimation form for option butterfly portfolio returns. The empirical analysis shows that the SPD function estimated by using single-index nonparametric option model can effectively calculate the option butterfly portfolio returns with the minimum option strike price interval and provide an effective reference tool for risk-averse investors with limited risk preferences. [ABSTRACT FROM AUTHOR]

Understanding the density of state (DOS) distribution in solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs) is crucial for addressing electrical instability. This paper presents quantitative calculations of the acceptor-like state distribution of solution-processed IZO TFTs using thermal energy analysis. To extract the acceptor-like state distribution, the electrical characteristics of IZO TFTs with various In molarity ratios were analyzed with respect to temperature. An Arrhenius plot was used to determine electrical parameters such as the activation energy, flat band energy, and flat band voltage. Two calculation methods, the simplified charge approximation and the Meyer–Neldel (MN) rule-based carrier–surface potential field-effect analysis, were proposed to estimate the acceptor-like state distribution. The simplified charge approximation established the modeling of acceptor-like states using the charge–voltage relationship. The MN rule-based field-effect analysis validated the DOS distribution through the carrier–surface potential relationship. In addition, this study introduces practical and effective approaches for determining the DOS distribution of solution-processed IZO semiconductors based on the In molarity ratio. The profiles of the acceptor-like state distribution provide insights into the electrical behavior depending on the doping concentration of the solution-processed IZO semiconductors. [ABSTRACT FROM AUTHOR]

In this paper, we investigate a critical behavior of JT gravity, a model of two-dimensional quantum gravity on constant negatively curved spacetimes. Our approach involves using techniques from random maps to investigate the generating function of Weil-Petersson volumes, which count random hyperbolic surfaces with defects. The defects are weighted geodesic boundaries, and criticality is reached by tuning the weights to the regime where macroscopic holes emerge in the hyperbolic surface, namely non-generic criticality. We analyze the impact of this critical regime on some universal features, such as its density of states. We present a family of models that interpolates between systems with ρ0(E) ~ E − E 0 and ρ0(E) ~ (E − E0)3/2, which are commonly found in models of JT gravity coupled to dynamical end-of-the-world and FZZT branes, and give a precise definition of what this phase transition means from the random geometry point of view. [ABSTRACT FROM AUTHOR]

In this work, we proposed a novel theory of DOS for disordered organic semiconductors based on the frontier orbital theory and probability statistics. The proposed DOS has been verified by comparing with other DOS alternatives and experimental data, and the mobility calculated by the proposed DOS is closer to experimental data than traditional DOS. Moreover, we also provide a detailed method to choose the DOS parameter for better use of the proposed DOS. This paper also contains a prediction for the DOS parameters, and it has been verified by the experimental data. More importantly, the physical meaning of the proposed DOS parameter has been explained by equilibrium energy theory and transport energy theory to make this proposed model more rational. Compared with the improved DOS based on Gaussian and exponential DOS, this work is a new attempt to combine probabilistic theory with physical theory related to DOS in disordered organic semiconductors, showing great significance for the further investigation of the properties of DOS. [ABSTRACT FROM AUTHOR]

In the present paper, V2O5-TeO2 glass was prepared by the melt-quenching technique. Crystallization of glass with a vanadium content higher than 35%mol results in an increase in electrical conductivity by a few orders of magnitude and a decrease in activation energy from ~0.40 to ~0.12 eV. In this work, a critical review of existing charge transfer models was presented on the example of V2O5-TeO2 glass and glass–ceramics. Schnakenberg's and Friedman-Triberis' charge transfer models were found to be applicable to both glass and glass–ceramics. Optical phonon frequencies obtained from Schnakenberg's model are in agreement with FTIR studies. Values of activation energies obtained from the Schnakenberg model decrease after crystallization. Friedman-Triberis' model shows an increase in the density of states near the Fermi level from 1019 eV−1 cm−3 in glass, to 1021 eV−1 cm−3 in glass ceramics. Structural studies show that the main crystallizing phase is Te2V2O9 which occurs with the V2O5 shell in glasses with compositions 50–50%mol and 45–55%mol. It is concluded that crystallization results in the reduction of vanadium ions in the remaining glass matrix which leads to an increase in the V4+/V5+ ratio and therefore, an increase in electrical conductivity. [ABSTRACT FROM AUTHOR]

In this paper, within the framework of virtual crystal approximation, the mathematical modeling of the dependence of the density of states of polariton excitations in a 1D photonic crystal—a system of pores (tunnel-coupled microresonators) containing quantum dots—on the concentration of structural defects is performed. [ABSTRACT FROM AUTHOR]

In this paper, we investigate the influence of metal nanoparticles on the sensitivity properties of graphene with respect to gas molecules adsorbed on its surface on the example of copper nanoparticles. The influence of the metal atom is taken into account by changing the hopping integral for the regions adjacent to it. Such features are due to the presence of a metal nanoparticle on the surface of a graphene nanoribbon which changes the hybridization of pi electrons in the immediate vicinity of the adsorption site of a metal atom. First of all we use the transition from a two-dimensional array corresponding to the sites of the graphene plane to a one-dimensional array for the determination of the density of states of the system under consideration. Secondly, we are based on the numerical diagonalization of the Hamiltonian for rectangular graphene nanoribbon in the tight-binding approximation. It allows us to estimate the response of the system based on the current-voltage characteristic for the tunneling contact of the graphene nanoribbon with different materials. In this paper we choose metal and quantum dots. The best results have been demonstrated in terms of sensitivity to adsorbed gas molecules for contacts with these materials. In this case, the tunnel current density is calculated from the density of states of the system. Decorating the graphene plane with copper nanoparticles significantly changes the resistance in the tunneling contact of the nanoribbon with the quantum dots or with the metal. Also we observe an increase in the sensitivity of graphene nanoribbons to impurities with an increase in the concentration of metal nanoparticles. Thus, we propose an approach based on the study of tunneling current, which has several advantages, since it allows optimizing the choice of the second sample to achieve the highest sensitivity. Equally important is the fact that various types of contacts may be more optimal for determining various types of impurities. [ABSTRACT FROM AUTHOR]

Gallium selenide (GaSe) has become increasingly popular in the field of optoelectronics due to its suitable band gap. The layered structure of bulk crystal GaSe makes it easy to create a monolayer of GaSe. However, this also results in an increase in the band gap. In this paper, we used the full-potential periodic density functional theory (DFT) method to examine the electronic structure of both pure and Cu-doped GaSe. We modeled Ga1-xCuxSe with x = 0.02, 0.03, 0.056, and 0.125 with and without Ga vacancy. We compared the structure, electronic properties, and magnetic properties of the pure bulk and monolayer with those of the Cu-doped samples. The density of state graphs clearly demonstrate that Ga-defected and Cu-doped GaSe have p-type characteristics. The presence of a Ga vacancy causes the GaSe monolayer to become half-metallic, which has potential applications in spintronics. When the Cu concentration reaches approximately 3%, there is a 20% reduction in the band gap. Both the Ga vacancy and Cu doping create deep defect levels that lead to carrier recombination. The position of these levels is highly dependent on the concentration of Cu. Increasing the Cu concentration from% 1 to 2.78% results in a decrease in recombination. [ABSTRACT FROM AUTHOR]