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Scintillators are used not only as single crystals in radiation detection systems but also as arrays, columns, and fibers. In this study, a novel optical-guiding crystal scintillator (OCS) was fabricated using an Eu:SrI 2 crystal as the core and borosilicate glass as the cladding. The OCS has an elongated shape and can be flexibly processed like an optical fiber. Furthermore, because inorganic scintillator crystals are used as the core, the OCS has high sensitivity to high-energy radiation, such as γ- and X-ray radiation, unlike plastic scintillators. In this study, by observing the cross section of the fabricated OCS, identifying the crystal structure, and investigating the radioluminescence spectrum under X-ray irradiation, OCS fabrication in accordance with the OCS design specifications was confirmed, and the SrI 2 crystal structure and Eu2+ 5d–4f luminescence were maintained. The γ-ray responses, such as light yield and decay time, were also investigated. [ABSTRACT FROM AUTHOR]

In this study, a new Cs4SrI6:Yb2+,Sm2+ near‐infrared (NIR) emitting scintillator was developed using sensitization strategy. It was found that Yb2+ sensitization significantly enhances the NIR radioluminescence (RL) of Sm2+, providing a new approach of designing highly emissive sensitized NIR scintillators. By studying the optical spectra and decay kinetics of Cs4SrI6:Yb2+,Sm2+, it was revealed that the energy transfer pathways involve both radiative and nonradiative processes. The gamma spectroscopy performance of Cs4SrI6:Yb2+,Sm2+ single crystals was studied by using the high‐quantum‐efficiency avalanche photodiode (APD) as the readout. Our results highlight the importance of using sensitization strategy of achieving NIR emitting scintillators and demonstrate the significant potential for radiation detection applications. [ABSTRACT FROM AUTHOR]

A comparative study on the radioluminescence properties of Ce-doped SrAl2O4 single crystal and translucent ceramic was performed. The transmittance of the synthesized ceramic is 20-30% in the visible region. Both samples exhibit photo- and radioluminescence with a broad emission peaking at 380 nm. The decay curves are fitted by a single exponential decay function with decay time constants of 30-50 ns, consistent with the typical value of the emission for the 5d-4f transitions of Ce3+. From the pulse height spectra measured under 241Am γ-ray (59.5 keV) irradiation, the scintillation light yields are 17000 ph/MeV for the single crystal and 6100 ph/MeV for the synthesized ceramic. The scintillation light yield and afterglow of the present samples show a negative correlation. [ABSTRACT FROM AUTHOR]

The Nd-doped LaMgAl11O19 single crystals were synthesized by the floating zone method, and the photoluminescence and scintillation properties were evaluated. Under X-ray irradiation, several sharp emission peaks due to the 4f–4f transitions of Nd3+ were observed at 900, 1060, and 1340 nm in the near-infrared range, and the decay curves show the typical decay time for Nd3+. The samples show good afterglow properties comparable with practical X-ray scintillators. The 1% and 3% Nd-doped LaMgAl11O19 samples show a good linearity in the dynamic range from 6–60,000 mGy/h. [ABSTRACT FROM AUTHOR]

In recent years, Cs2ZnCl4 crystal has become an ideal substrate for various functional doped ions due to its large bandgap, showing potential in photodetectors and scintillators. In practical application, the intrinsic defect luminescence of bulk crystals has an important effect on the photoelectrical properties. In this work, Ø12 mm × 90 mm Cs2ZnCl4 single crystal was grown by the vertical Bridgman method. The theoretical bandgap, state density distribution, and refractive index curve of the crystal were obtained by first-principles calculation of the structure data. The luminescence properties of the crystal were characterized, including photoluminescence spectrum and radioluminescence spectrum. The temperature-dependent photoluminescence spectrum of the crystal was studied, and the luminescence process of the defects in the crystal was analyzed by the experimental results. [ABSTRACT FROM AUTHOR]

The radioluminescence (RL) of a Lu 3 Al 5 O 12 :Ce (LuAG:Ce) single crystal and a transparent polycrystalline ceramic was investigated at high temperatures, up to 600 °C. Two bands were observed, one within 1.8–2.8 eV attributed to Ce3+, and another within 2.8–4.5 eV attributed to the collective behavior of different types of defects. The integrated RL intensity of the Ce3+ band normalized to the respective value at RT increased by a factor of 1.4x from room temperature (RT) up to 450 °C for the single crystal, and by a factor of 1.9x up to 300 °C for the polycrystalline ceramic. Comparison between the integrated RL intensity and glow curves suggested the radiative recombination of electrons thermally released from traps to account for the increase in RL intensity. Beyond these respective temperatures, integrated RL intensity decreased linearly with a rate ~1.4x higher for the single crystal. At about 500/530 °C the normalized integrated RL intensity was the same as at RT for the polycrystalline ceramic and the single crystal, respectively, showing that LuAG:Ce scintillators can be effectively used over a broad range of temperatures. [ABSTRACT FROM AUTHOR]

β-Ga 2 O 3 is an emerging ultra-wide bandgap (4.9 eV) oxide semiconductor that additionally scintillates under gamma excitation. A unique combination of transparency in the UV/visible spectrum, semiconducting, and scintillation properties makes that compound interesting for fundamental studies of underlying physics and design of novel devices, in particular compact detectors for gamma radiation. Undoped, and singly (Ce, Si, Al), doubly (Ce + Si, Ce + Al), and triply (Ce + Al + Si) doped bulk β-Ga 2 O 3 single crystals were grown by the Czochralski method under very similar conditions and systematically studied in terms of electrical and optical properties that were correlated with scintillation light yield under gamma excitation. A wide spectrum of doping enabled to control the free electron concentration in semiconducting β-Ga 2 O 3 crystals within almost three orders of magnitude (7 × 1015–6 × 1018 cm−3) with the Hall mobility approaching 150 cm2 V−1s−1. The maximum of light yield under gamma excitation was recorded for undoped and Ce-doped β-Ga 2 O 3 single crystals having the free electron concentration of mid 1016 cm−3. The light yield significantly decreases for both electrically insulating and highly conducting (Si-doped) crystals. None of the dopants (Ce, Si, Al) introduces any absorption bands in the spectral region of light emission (340–410 nm) under gamma excitation. The dopants in quest do not affect the structure of neither cathodoluminescence (CL) nor radioluminescence (RL) emissions, but modify their absolute intensity. A double-band structure of RL spectra corresponds to UV and blue emissions observed in CL spectra that are assigned to self-trapped excitons. Image 1 • Doped semiconducting β-Ga 2 O 3 was grown and studied for gamma radiation detection. • The crystals are fully transparent to scintillation emissions at 340–410 nm. • Maximum of light yield was found at free electron concentration of mid 1016 cm−3. • Luminescence spectra point to self-trapped excitons in scintillation mechanism. [ABSTRACT FROM AUTHOR]

This work is dedicated to the growth process and investigation of luminescent and scintillation properties of CeAlO3 single crystals and CeAlO3/CeAl11O18 metamaterials under e-beam and α-particles excitation. It has been shown that cathodoluminescence and radioluminescence spectra of CeAlO3 crystals contain two bands, peaking at 440 and 500 nm, and caused by the Ce3+ 5d–4f transitions into CeAl11O18 phase, which is present in these crystals as an admixture. Under 270 nm ultraviolet (UV) light excitation, a CeAlO3 crystal possesses complicated non-exponential luminescence decay, with the average decay time of 16 ns. The light yield of CeAlO3 crystals under α-particle excitation is about 16% and 12%, in respect to the standard Bi4Ge3O12 (BGO) crystal and Y3Al5O12:Ce (YAG:Ce) single crystalline film samples, respectively. The CeAlO3 scintillation decay is quite fast, with the decay time value t1/e in the 54–56 ns range. [ABSTRACT FROM AUTHOR]