1. Graphene/Ferroelectric (Ge-Doped HfO 2) Adaptable Transistors Acting as Reconfigurable Logic Gates.
- Author
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Dragoman, Mircea, Dinescu, Adrian, Dragoman, Daniela, Palade, Cătălin, Teodorescu, Valentin Şerban, and Ciurea, Magdalena Lidia
- Subjects
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LOGIC circuits , *FIELD-effect transistors , *GRAPHENE , *THRESHOLD voltage , *METAL oxide semiconductor field-effect transistors , *TRANSISTORS - Abstract
We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO2/5 nm Ge-HfO2 intermediate layer/8 nm tunnel HfO2/p-Si substrate. The intermediate layer is ferroelectric and acts as a floating gate. All transistors have two top gates, while the p-Si substrate is acting as a back gate. We show that these FETs are acting memtransistors, working as two-input reconfigurable logic gates with memory, the type of the logic gate depending only on the values of the applied gate voltages and the choice of a threshold current. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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