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Exciton related processes in two-dimensional (2D) transition metal dichalcogenides (TMDCs) play important roles in their optoelectronic applications. In this work, through broadband transient absorption spectroscopy, the electronic band structure evolution, exciton energy shifting dynamics and power-dependence spectral characteristics of WSe2 layers, including monolayer, bilayer, tri-layer and bulk WSe2 under 400 nm and 800 nm excitations are investigated. Particularly, under 400 nm excitation, due to the hot-exciton effect, the A-exciton energy shifting dynamics in WSe2 layers have been analysized in detail, where thicker WSe2 samples possess slower hot-exciton cooling lifetimes, and the exciton recombination approaches are affected by the band structure and interlayer interactions, in comparison with that under 800 nm excitation. The power-dependence spectral evolution in WSe2 layers suggests that the charged states like trions could be facilitated in tri-layer WSe2 (or thicker samples) at the same experimantal conditions. These findings in WSe2 layers could provide a deep insight into the hot-exciton related processes in 2D TMDCs from transient experiments ponit of view. [ABSTRACT FROM AUTHOR]

Band renormalization effects play a significant role for two-dimensional (2D) materials in designing a device structure and customizing their optoelectronic performance. However, the intrinsic physical mechanism about the influence of these effects cannot be revealed by general steady-state studies. Here, band renormalization effects in organic superacid treated monolayer MoS2, untreated monolayer MoS2 and few-layer MoS2 are quantitatively analyzed by using broadband femtosecond transient absorption spectroscopy. In comparison with the untreated monolayer, organic superacid treated monolayer MoS2 maintains a direct bandgap structure with two thirds of carriers populated at K valley, even when the initial exciton density is as high as 2.05 × 1014 cm−2 (under 400 nm excitations). While for untreated monolayer and few-layer MoS2, many-particle induced band renormalizations lead to a stronger imbalance for the carrier population between K and Q valleys in k space, and the former experiences a direct-to-indirect bandgap transition when the initial exciton density exceeds 5.0 × 1013 cm−2 (under 400 nm excitations). Those many-particle induced band renormalization processes further suggest a band-structure-controlling method in practical 2D devices. [ABSTRACT FROM AUTHOR]

Band renormalization effects play a significant role for two-dimensional (2D) materials in designing a device structure and customizing their optoelectronic performance. However, the intrinsic physical mechanism about the influence of these effects cannot be revealed by general steady-state studies. Here, band renormalization effects in organic superacid treated monolayer MoS2, untreated monolayer MoS2 and few-layer MoS2 are quantitatively analyzed by using broadband femtosecond transient absorption spectroscopy. In comparison with the untreated monolayer, organic superacid treated monolayer MoS2 maintains a direct bandgap structure with two thirds of carriers populated at K valley, even when the initial exciton density is as high as 2.05 × 1014 cm−2 (under 400 nm excitations). While for untreated monolayer and few-layer MoS2, many-particle induced band renormalizations lead to a stronger imbalance for the carrier population between K and Q valleys in k space, and the former experiences a direct-to-indirect bandgap transition when the initial exciton density exceeds 5.0 × 1013 cm−2 (under 400 nm excitations). Those many-particle induced band renormalization processes further suggest a band-structure-controlling method in practical 2D devices. [ABSTRACT FROM AUTHOR]