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Driven by the pursuit of optimizing the luminescent properties of garnet-based single crystals for X-ray imaging applications, this work reports on the successful synthesis and in-depth characterization of GYAGG crystals doped with Ce³⁺ or Tb³⁺ ions, and doubly-doped with both of them. Micro-pulling down synthesis yielded crystals with a single cubic phase confirmed by X-ray diffraction. Photoluminescence (PL) and radioluminescence (RL) measurements on Ce³⁺,Tb³⁺ co-doped GYAGG revealed bidirectional energy transfer processes. Characteristic broadband 5d 1 →4f emission of Ce³⁺ centers peaking at 530 nm and narrow 4f→4f emission lines of Tb³⁺ ions starting from 5D 4 level within 480–630 nm were observed. At higher doping levels, cross-relaxation in Tb³⁺ pairs resulted depleted 5D 3 state and only the emission from 5D 4 one was observed in the spectra. Analysis of PL decay characteristics corroborated the spectral observations, confirming progressively decreasing Ce³⁺ decay time (down to 40 ns at 15 % Tb3+) due to enhanced Ce³⁺→Tb³⁺ energy transfer. Similarly, the Tb³⁺ decay time accelerated by more than 60 % after the Ce³⁺ co-doping. Notably, co-doping with 0.5 % Ce³⁺ and 10–15 % Tb³⁺ doubled the luminescence intensity of RL spectra compared to 0.5 % Ce³⁺-doping alone, attributed to the increased density of emitting centers. • High-quality and crack-free GYAGG:Ce,Tb single crystals were successfully grown. • The photoluminescence spectra revealed Ce³⁺↔Tb³⁺ bidirectional energy transfer. • At lower Tb³⁺ doping (0.5 %), the bidirectional energy transfer was inefficient. • High Tb³⁺ doping (15 %) significantly enhanced energy transfer. • Co-doping yielded a two-fold radioluminescence intensity compared to sole doping. [ABSTRACT FROM AUTHOR]

In this study, we examine the impact of optical and scintillation properties on needle-shaped bis(butylammonium) lead bromide [(BA) 2 PbBr 4 ] crystals (average length of 12.7 mm and average width of 1.3 mm), considering different growth methods and dimensions. Needle-shaped crystals with a length-to-width aspect ratio greater than 10 are essential for cutting-edge radiation imaging technology. Through X-ray diffraction characterization, we observe lattice expansion in the needle-shaped crystals compared to previous single crystals. This expansion leads to a stronger overlap between absorption and photoluminescence (PL) spectra, resulting in a smaller Stokes shift of 26 meV. Time-resolved PL analysis reveals a fast decay component of 0.8 ns, which is 68 % faster than the previously reported best value of 2.0 ns, with an average decay time of 3.6 ns, 48 % faster than the best reported value of 7.0 ns. Although our measured sample exhibits a comparatively low light yield (LY) of 7.8 ph/keV due to strong self-absorption, the best energy resolution is observed with a value of 11.5 %, similar to the best reported value of 10.9 %. Despite this, the LY is notably superior to that of previously reported benzylammonium lead bromide [(BZA) 2 PbBr 4 ] crystals (3.7 ph/keV). Additionally, scintillation decay shows a fast component of 9.4 ns and an average decay time of 119 ns. These characteristics make two-dimensional-(BA) 2 PbBr 4 needle-shaped crystals promising candidates for cost-effective and scalable applications in radiation imaging technology. • Solution process 2D-(BA) 2 PbBr 4 needle-shaped crystals was successfully synthesized with an aspect ratio of length to width exceeding 10. • Time-resolved photoluminescence analysis reveals ultra-fast decay component of 0.8 ns, which is 68 % faster than the reported value of 2.0 ns. • Solution grown needle-shaped 2D perovskites are an interesting and versatile class of materials for cost-effective and scalable in cutting-edge radiation imaging technology. [ABSTRACT FROM AUTHOR]

Single crystals of Gd 3 (Ga,Al) 5 O 12 :Ce,Mg with different concentration of Mg2+ ions varying from 0 to 0.029 at.% are investigated by the X-ray diffraction, steady-state and time-resolved photoluminescence, and thermally stimulated luminescence (TSL) methods in a wide temperature range (77–510 K). The origin and structure of the luminescence centers are considered. The influence of Mg2+ ions on the structure of the Ce3+-related excited state, the processes taking place in this state, and the TSL characteristics is clarified. At low temperatures, the photoluminescence optical quenching in close {Ce3+ - Mg2+} pairs is found to be responsible for the light yield reduction accompanied with the acceleration of the luminescence decay kinetics. At room temperature, the luminescence quenching can be additionally caused by the thermal ionization of the 5d 1 excited state of Ce3+ ion, whose probability increases with the increasing Ga content. The conclusion is made that in order to create the fast scintillator with the maximum light yield, the concentration of intrinsic crystal lattice defects in Gd 3 (Ga,Al) 5 O 12 :Ce,Mg should be minimized, the optimum composition of the host should be chosen, and the balance between the concentrations of the doped Mg2+ and Ce3+ ions should be optimised. • Photo- and thermoluminescence and XRD of Gd 3 (Ga,Al) 5 O 12 :Ce,Mg crystals are studied. • Influence of Mg2+ ions on the Ce3+-related luminescence and excited states is clarified. • Optical quenching in close {Ce3+ - Mg2+} pairs results in the light yield reduction and accompanied with acceleration of the Ce3+ luminescence decay kinetics. • Ga3+ ions and intrinsic defects strongly influence the luminescence thermal quenching. • Optimum host composition and preferable Ce3+/Mg2+ concentration ratio are considered. [ABSTRACT FROM AUTHOR]

LaMgAl 11 O 19 :Er single crystals were examined as candidates for scintillators emitting near-infrared luminescence, and their radioluminescence and scintillation detector characteristics were assessed. Upon exposure to X-ray, distinct emission peaks appear at ∼550 and ∼1540 nm and are attributable to Er3+ ions. The decay curves also exhibited characteristic decay times associated with Er3+ ions. Particularly, the 3% Er-doped sample showed a discernible linearity in the dynamic range of dose rate from 1 to 50,000 mGy/h, indicating the potential utility in applications requiring precise and reliable radiation measurements. • Er-doped LaMgAl 11 O 19 crystals were synthesized by the floating zone method. • The samples show a broad emission band at 380 nm due to host and sharp peaks at 550 and 1540 nm due to Er3+. • The 3% Er-doped sample showed a good linearity in the dynamic range of dose rate from 1 to 50,000 mGy/h. [ABSTRACT FROM AUTHOR]

Lead halide perovskites are reportedly a very promising group of materials for scintillation due to their fast sub-nanosecond exciton luminescence, small band-gaps, and high theoretical light yield. Unfortunately, they only show emission at cryogenic temperatures. In this work single crystals of CsPbBr 3 and CsPbCl 3 are studied at cryogenic temperatures. Upon comparing the 10 K emission spectra measured under X-ray and UV–vis excitation, a new near-infrared emission was found for both CsPbBr 3 and CsPbCl 3 only present under X-ray excitation. The integral light yields of CsPbBr 3 and CsPbCl 3 at 10 K are estimated to be 34,000 and 2,200 photons/MeV under 40 keV X-ray excitation, respectively. The main components of the light yield of CsPbBr 3 at 10 K are the near band-gap free exciton emission that suffers from self-absorption and the broad near-infrared emission that falls outside the typical detection range of a photo-multiplier tube. Due to the combination of the two aforementioned effects it was not possible to measure a γ -ray pulse height spectrum for CsPbBr 3 at 10 K. Despite all the suitable properties, like the fast decay, a small band-gap, and the positive prospects of 3D perovskite based scintillators, we conclude that these materials perform poorly as scintillation crystals. [ABSTRACT FROM AUTHOR]

0.5, 1, 2, and 5% Er-doped La 3 Ga 5 SiO 14 (LGS) single crystals were synthesized by the Floating Zone method and the photoluminescence (PL) and scintillation properties were characterized. Emission peaks appeared at visible–near-infrared (NIR) regions. Their spectral features matched with those due to the 4f–4f transitions of Er3+. The PL quantum yields of 0.5, 1, 2, and 5% Er-doped samples were respectively 45.0, 73.3, 82.5, and 69.4%. The decay times due to the 2H 9/2 –4I 15/2 transitions of Er3+ were obtained when visible ranges were monitored under excitation of both visible lights and X-rays. All the prepared samples showed good linearity between the X-ray exposure dose rate and scintillation signals in NIR ranges. The best lower detection limit in prepared samples was 5 mGy/h recorded by the 2% Er-doped LGS. • Er-doped La 3 Ga 5 SiO 14 single crystals were synthesized by the Floating zone method. • Luminescence due to 4f–4f transitions of Er3+ was observed in both visible and near-infrared regions. • Quantum yields of 0.5, 1, 2, and 5% Er-doped samples were respectively 45.0, 73.7, 82.5, and 69.4%. • The best lower detection limit in prepared samples was 5 mGy/h obtained by 2% Er-doped sample. [ABSTRACT FROM AUTHOR]

Intrinsic luminescence in Ce-doped (Lu,Y) 2 SiO 5 (or LYSO:Ce) single crystals have been studied by means of excitation luminescence spectroscopy in the vacuum ultraviolet energy range under synchrotron radiation. A previously unreported luminescence band with emission at 250 nm has been discovered as well as its thermal behavior was described in the temperature range 10–120 K. The excitation spectra as well as time-resolved properties of this band suggest that this emission corresponds either to the singlet component of self-trapped exciton or to a self-trapped exciton in the lutetium sublattice of LYSO single crystals. • New previously unreported intrinsic emission band at 250 nm has been observed in LYSO single crystals. • Temperature dependencies of intrinsic luminescence have been measured and analyzed. • Two possible origins of new 250 nm emission are proposed and discussed. [ABSTRACT FROM AUTHOR]

This study provided the first in-depth investigation of the effects of large dopant incompatibility (Pr3+ and La3+ ions) on the small host lattice element (Lu3+) in Lu 3 Al 5 O 12 (LuAG) single crystal. The growth of such complex crystals from the melt presented many challenges. By engineering the ionic radius ratio of RE- and M-site cations, a single-crystal phase stabilized by configurational entropy was achieved. This investigation elucidated the crystallization behavior of configurationally disordered rare-earth aluminum garnet oxide (Lu 1−x−y Pr x La y) 3 Al 5 O 12 from the melt and characterized its functional properties, including microstructural, optical, photoluminescence, and scintillation properties, between 5 and 300 K. Relaxation of the imposed strain energy led to local perturbations and destabilization of the garnet structure. Multielemental EDS mapping, micro-Raman spectroscopy, and thermoluminescence revealed the mechanism by which atomic size mismatch drove a smooth transition from the garnet to the perovskite phase in high entropy garnets. The optical, photoluminescence, and scintillation measurements provided fundamental insights into property changes driven by incompatibility doping. Standard and modified Judd-Ofelt theory analysis of absorption spectra determined the phenomenological Judd-Ofelt parameters Ω λ and radiative lifetimes. Atomic size mismatch engineering offers a promising approach to overcoming the limitations of conventional eutectic synthesis methods. • Perovskite inclusions, driven by atomic size mismatch, extend from rim to core. • Controlled incompatible La3+,Pr3+ codoping in LuAG modify functional properties. • Scintillation light yield improved up to 30% in La3+ codoped LuAG:Pr crystals. • (La,Pr)AlO 3 perovskite forms due to size mismatch of La3+ and Pr3+ with Lu3+. • Lattice disorder affects the intensity ratio of Pr³⁺ 5d→4 f and 4 f→4 f emissions. [ABSTRACT FROM AUTHOR]

• (Gd 1-x Ce x) 3 (Ga 0.995 Cr 0.005) 5 O 12 single crystals were grown by micro-pulling down method. • The emission wavelengths of these crystals were approximately 730 nm. • Cr was segregated in the center part of the crystals. • The relationship between Cr segregation and emission intensity was investigated. • The correlation coefficients of thoes relationships were around 0.9. For the decommissioning of Fukushima Daiichi Nuclear Plants, a novel real-time dose-rate monitor consisting of a scintillator, 100-m long optical fiber and CCD spectrometer has been proposed, and this scintillation material is required to have an emission wavelength of longer than approximately 650 nm. In this paper, as a candidate material for the system, we focused on Ce/Cr co-doped Gd 3 Ga 5 O 12 (Ce/Cr:GGG) single crystals grown by the micro-pulling down method. Since the light output of this material was expected to depend on the Cr3+ concentration, we investigated the relationship between Cr segregation and luminescence properties in Ce/Cr:GGG crystal. Generally, a single photon counting method is not available to evaluate its light output accurately due to the long decay time, we used a novel technique "emission-intensity two-dimensional- mapping method" (2D-image method) to verify the light intensity at each point of the sample. This method realized estimation of the light intensity within the sample, though segregation of Cr3+ is observed. The results showed that Cr was concentrated in the center part along the radial direction in the grown crystals, while all parts had an emission wavelength of approximately 730 nm excited by X-ray. Using the 2D-image method, emission intensity was found to correspond to the Cr concentration, and its correlation coefficients between emission intensity and Cr concentration were over 0.8. We found that our material is available for the monitoring system when the Cr dense part of the crystal is cut and used. [ABSTRACT FROM AUTHOR]

(C 4 H 9 NH 3) 2 PbI 4 and (C 6 H 5 C 4 H 8 NH 3) 2 PbI 4 single crystals were synthesized by the slow cooling method, and their optical and scintillation properties were evaluated. Both samples had sharp X-ray diffraction peaks with intervals of (0 0 2 l) (l = 5–7). Absorption edges of (C 4 H 9 NH 3) 2 PbI 4 and (C 6 H 5 C 4 H 8 NH 3) 2 PbI 4 were confirmed at 535 and 520 nm, respectively. They showed luminescence due to the recombination of excitons at 500–700 nm. Scintillation decay times at 0.5–0.7 ns were obtained by approximation of decay curves. The light yields of (C 4 H 9 NH 3) 2 PbI 4 and (C 6 H 5 C 4 H 8 NH 3) 2 PbI 4 were respectively evaluated to be 1200 and 1500 photons/5.5 MeV-α by measuring full absorption peaks of 241Am α-rays. • (C 4 H 9 NH 3) 2 PbI 4 and (C 6 H 5 C 4 H 8 NH 3) 2 PbI 4 single crystals were grown by the slow cooling method. • Luminescence due to the recombination of free excitons was observed. • Scintillation decay times of sub-nanoseconds were observed. • Light yield of (C 6 H 5 C 4 H 8 NH 3) 2 PbI 4 was 1500 photons/5.5 MeV-α. [ABSTRACT FROM AUTHOR]

0.05, 0.1, 0.5, and 1.0 % Dy-doped YVO 4 single crystals were prepared by the optical floating zone technique to obtain photoluminescence (PL) and scintillation properties. All the samples showed the emission owing to charge transfer from V5+ ions to O2− ions inside [VO 4 ]3- and the 4f–4f transitions of Dy3+ ions. Light yields exhibited 37,000 (0.05 % Dy), 42,000 (0.1 % Dy), 44,000 (0.5 % Dy), and 39,000 photons/MeV (1.0 % Dy), based on the pulse height spectra. In afterglow properties, afterglow levels were 37.7 (0.05 % Dy), 25.7 (0.1 % Dy), 23.2 (0.5 % Dy), and 20.6 (1.0 % Dy) ppm. • We have synthesized Dy-doped YVO 4 single crystals by floating zone method. • We have characterized the photoluminescence, and scintillation properties of the Dy-doped YVO 4 single crystal. • Pulse height spectra revealed that the light yield of 0.05, 0.1, 0.5, and 1.0 % Dy-doped YVO 4 single crystals was 37,000, 42,000, 44,000, and 39,000 photons/MeV, respectively. • In afterglow properties, afterglow levels were 37.7 (0.05 % Dy), 25.7 (0.1 % Dy), 23.2 (0.5 % Dy), and 20.6 (1.0 % Dy) ppm. [ABSTRACT FROM AUTHOR]

High-quality lutetium aluminum garnet doped with various Pr3+ concentrations ((Lu 1- x Pr x) 3 Al 5 O 12 , abbreviated to Pr:LuAG) single crystals were grown by the optical floating zone method. The concentration of Pr3+ dependence on microstructure, luminescence and scintillation properties were systematically studied. Based on the results of Rietveld refinement, the doping of Pr3+ leads to lattice distortion and lowers its symmetry. The symmetry of the LuO 8 dodecahedron center is lowest at 0.010, as confirmed by the Raman spectra. When excited at 450 nm and X-rays, the primary emission peak at 614 and 300 nm, respectively, induced by Pr3+ 4 f 2-4 f 2 and 4 f 5 d -4 f 2 transitions. The optimal doping concentration is 0.010. The electric dipole-electric dipole interaction between adjacent Pr3+ was responsible for the concentration quenching in the Pr:LuAG single crystals. (Lu 0.990 Pr 0.010) 3 Al 5 O 12 shows the shortest average scintillation decay time (22.55 ns) and highest light yield (23,842 ± 2300 ph./MeV) under 662 KeV 137Cs gamma-ray irradiation. In terms of overall luminescence and scintillation performance, 0.010 doping was the best for Pr3+ doped LuAG single crystals. • High quality Pr:LuAG single crystal was grown by optical floating zone method. • Pr ions lead to the enhanced translational motion of rare earth ions in Pr:LuAG. • Electric dipole-electric dipole interaction induced concentration quenching of Pr3+. • 0.010 Pr:LuAG single crystal has the best scintillation and luminescence properties. [ABSTRACT FROM AUTHOR]

Luminescence excitation spectra of BaBrI single crystals doped by divalent lanthanide ions are studied using synchrotron radiation excitations from the MAX IV 1.5 GeV storage ring. The energy of the edge and the formation of core cation exciton as well as the energy threshold of the multiplications of electronic excitations is found. It was clearly established the energy transfer from intrinsic luminescence centers to Sm2+ and Eu2+ ions. [ABSTRACT FROM AUTHOR]

BaCl 2 :Eu transparent ceramics were synthesized by the spark plasma sintering method, and concentration dependence of Eu on optical and scintillation properties was investigated. BaCl 2 :Eu transparent ceramics showed photoluminescence (PL) and scintillation peaks at 400 nm due to 5d–4f transition of Eu2+. The PL and scintillation decay time constants of BaCl 2 :Eu transparent ceramics were ∼400 ns. The PL quantum yields (QY s) of 0.05, 0.1, 0.5, and 1% BaCl 2 :Eu transparent ceramics were 28.5, 25.6, 16.2, and 13.9%, respectively. The afterglow levels of BaCl 2 :Eu transparent ceramics were lower than CsI:Tl single crystal in practical use. The scintillation light yield of the 0.5% doped BaCl 2 :Eu transparent ceramic was 9800 photons/MeV when γ-rays by 137Cs were irradiated. • BaCl 2 :Eu transparent ceramics were synthesized using the SPS method. • We investigated the optical and scintillation properties. • The scintillation peak due to 5d–4f transition of Eu2+ was observed at 400 nm. • The 0.5% Eu-doped sample showed the highest LY (9800 ph/MeV) under 137Cs γ-ray irradiation. [ABSTRACT FROM AUTHOR]

The luminescent properties of the single crystals of Ce3+ doped (Gd 1−x−y Lu x Y y) 3 Al 5 O 12 :Ce (x = 0.1; y = 1.5) and Gd 3 Ga x Al 5-x O 12 :Ce (x = 2.7) garnets (GLYAG:Ce and GGAG:Ce) were investigated in this work. Both crystals were grown by the micropulling down method. The conventional absorption and luminescence spectral measurements together with the luminescent spectroscopy under excitation by synchrotron radiation were performed to characterize the optical properties of crystals. It has been found that cumulative effects of reducing the ion radius from Gd3+ to Y3+ and Lu3+ in the dodecahedral sites of the garnets host and alloying of Al3+ ions in octahedral positions instead Ga3+ ions increases the crystal field strength and causes the respective redshift of the Ce3+ emission spectra in GLYAG:Ce crystals in comparison with GAGG:Ce garnet. The energy transfer from Gd3+ cations to Ce3+ has also been registered at the emission spectra and excitation spectra of both crystals. The energies of creation of the excitons bound with the Ce3+ ions in GLYAG:Ce and GAGG:Ce hosts were found to be equal to 6.415 ± 0.15 eV and 6.22 ± 0.15 eV, respectively. Both crystals show well-distinguished thermo- and optically stimulated luminescence (TSL and IR OSL) after α - and β -particle irradiation. Meanwhile, GAGG:Ce crystals show significantly higher TSL and IR OSL intensities (by 3–4 times) and faster OSL decay kinetics in comparison with GLYAG:Ce counterpart. • Gd 1.4 Lu 0.1 Y 1.5 Al 5 O 12 :Ce (GLYAG:Ce) and Gd 3 Ga 2.3 Al 2.7 O 12 :Ce (GAGG:Ce) garnet crystals were grown using the micro-pulling down method. • Luminescent properties of crystals were investigated using conventional spectral methods and synchrotron radiation excitation. • The energy of creation of the excitons bound with the Ce3+ ions in GLYAG:Ce and GAGG:Ce hosts was found. • Gd 1.4 Lu 0.1 Y 1.5 Al 5 O 12 :Ce and Gd 3 Ga 2.3 Al 2.7 O 12 :Ce crystals show well-distinguished TSL and IR OSL properties. • GAGG:Ce crystals show significantly higher TSL and IR OSL intensity and faster IR OSL decay kinetics in comparison with GLYAG:Ce counterpart. [ABSTRACT FROM AUTHOR]

The luminescence and scintillation properties of SrI 2 single crystals doped with 5% Eu2+ and 0.05%, 0.2% and 0.5% Sm2+ are evaluated. X-ray excited and photoluminescence measurements show energy transfer from excited Eu2+ ions to Sm2+ ions. At a concentration of 0.5% Sm2+, the luminescence consists almost entirely of 740 nm emission from Sm2+ 5d-4f transitions. Co-doping SrI 2 :5% Eu2+ with Sm2+ provides a novel method to bypass the self-absorption problem encountered in large SrI 2 :Eu2+ crystals and, at the same time, provides a unique near-infrared emitting scintillator with a light yield of approximately 40,000 photons/MeV. [ABSTRACT FROM AUTHOR]

Inorganic scintillation materials have been widely used in several fields, such as high energy physics, nuclear medical imaging and industrial nondestructive inspection. In this work, a novel scintillation material, (Ce x Lu 1-x) 3 Al 5 O 12 /Al 2 O 3 (Ce3+:LuAG/Al 2 O 3) eutectic with different Ce3+-doping concentrations, was successfully grown by the micropulling down method at different pulling speeds. The effects of Ce3+-doping concentration and pulling speed on the microstructure and luminescent properties of the Ce3+:LuAG/Al 2 O 3 eutectic were investigated. The eutectic has a typical garnet structure, and a "Chinese script" microstructure can be seen throughout the cross section. As the pulling speed increased, the grain size and the morphological appearance of the "Chinese script" microstructure decreases. The Ce3+:LuAG/Al 2 O 3 eutectic shows a characteristic Ce3+ emission band centered at 508 nm, and the emission intensity increases with increasing Ce3+-doping concentration until the Ce3+-doping concentration reaches x = 0.01. The eutectic grown at a pulling speed of 1.7 mm/min shows maximum emission intensity, and the light yield of the (Ce 0.01 Lu 0.99) 3 Al 5 O 12 /Al 2 O 3 eutectic excited with X-ray at room temperature is approximately 64% of that of the (Ce 0.01 Lu 0.99) 3 Al 5 O 12 single crystal. The results reveal that the Ce3+:LuAG/Al 2 O 3 eutectic has a potential application as an X-ray detector material. Image 1 • The Ce3+:LuAG/Al 2 O 3 eutectic was firstly grown by the micropulling down method. • The eutectic exhibits garnet structure and typical "Chinese script" microstructure. • The eutectic has high light-yield, short decay time and an X-ray detector material. [ABSTRACT FROM AUTHOR]

The scintillation characteristics of Gd 3 Al 2 Ga 3 O 12 :Ce, Li (GAGG:Ce,Li) and Gd 3 Al 2 Ga 3 O 12 :Ce, Mg (GAGG:Ce,Mg) single crystals were compared. Radioluminescence spectra and photoluminescence decay curves were measured at various temperatures between 77 and 500 K to investigate the thermal luminescence quenching. At 662 keV γ rays, the LY value of 35,400 photons/MeV and energy resolution of 6.9% obtained for GAGG:Ce, Li are superior to those of 24,200 photons/MeV and 9.5% for GAGG:Ce,Mg. Scintillation decays are approximated by a double exponentials with a fast principal decay component of 47 ns (83%) for GAGG:Ce, Mg and 90 ns (86%) for GAGG:Ce,Li. Coincidence time resolution of 282 ps obtained for GAGG:Ce, Mg is better than that of 389 ps for GAGG:Ce,Li. GAGG:Ce, Mg shows a much lower afterglow and thermally stimulated luminescence intensity with respect to GAGG:Ce,Li. • Scintillation properties of Li+ and Mg2+ -codoped Gd 3 Al 2 Ga 3 O 12 :Ce are compared. • Gd 3 Al 2 Ga 3 O 12 :Ce, Mg exhibits better timing performance. • Gd 3 Al 2 Ga 3 O 12 :Ce, Mg shows lower afterglow and TSL intensity. • Gd 3 Al 2 Ga 3 O 12 :Ce, Li exhibits high light yield and good energy resolution. [ABSTRACT FROM AUTHOR]

Abstract Single crystal scintillators of RE 2 O 3 :Eu (RE = Lu, Y, Sc) with high (8%) and low (1%) Eu doping concentration were grown by the optical floating zone method. The luminescence and scintillation properties have been investigated and compared thoroughly. Correlated measurements of afterglow curves, photoluminescence excitation and photoluminescence, photoluminescence decay curves and X-ray excitation curves were performed. Lu 2 O 3 :Eu and Y 2 O 3 :Eu present significant afterglow intensity decreasing after high Eu concentration doping. While for the Sc 2 O 3 :Eu, its afterglow intensity even increases slightly. The luminescence efficiencies of high doping concentration samples are weaker than that of the low concentration ones due to the concentration quenching. The integrated X-ray excitation luminescence reveals the scintillation luminescence efficiencies of samples with the high concentration or the low ones both have the following sequence:Lu 2 O 3 :Eu＞Y 2 O 3 :Eu＞Sc 2 O 3 :Eu. Highlights • RE 2 O 3 :Eu (RE = Lu,Y,Sc) single crystal scintillators are grown by optical FZ method. • Sc 2 O 3 :Eu present different afterglow behavior comparing with Lu 2 O 3 :Eu and Y 2 O 3 :Eu. • The relationship between afterglow and Eu(S 6).→Eu(C 2) energy transfer is discussed. [ABSTRACT FROM AUTHOR]

Abstract LaAlO 3 perovskite single crystals doped with Ce, Eu or Tb have been grown by micro-pulling-down method. X-ray diffraction analysis confirmed low-temperature rhombohedric phase. Energy-dispersive Laue mapping revealed sub-grains in the grown crystals. For the Ce-doped crystals, very low radioluminescence efficiency was found and the observed emission was ascribed to defects. Photoluminescence spectra were significantly different from the radioluminescence ones. They were significantly quenched at room temperature and the related luminescence showed also unusually high Stokes shift. High radioluminescence efficiency was found for the Tb-doped samples and especially for the Eu-doped ones, which would point to the fact that in LaAlO 3 the scintillation process is more favorable for the luminescence ions which tend to capture an electron first. Highlights • Morphology of the grown rare-earth-doped LaAlO3 crystals was studied. • Role of the growth atmosphere explained by its influence on Ce valence state. • Origin of radioluminescence explained by defect emission in Ce-doped crystals. • High radioluminescence efficiency found for Eu-doped crystals. [ABSTRACT FROM AUTHOR]

Large-sized γ-CuI single crystals with ultrafast scintillation property were grown in LiI acetonitrile solvent through evaporation technique. The LiI exhibits unique properties to γ-CuI single crystal preparation. One is that it increases the solubility of CuI in the solvent, which gives rise to a largest-sized (23 × 14 × 2 mm 3 ) single crystal with the high optical transmission (over 60%) in the wavelength region of 435–800 nm. The other feature is that it acts as an effective isoelectronic dopant and improves the molar ratio of copper to iodine, which greatly enhances the near-band-edge emissions (411 and 432 nm) and suppresses the broadband emission (680 nm). The decay time of the fast emission under pulsed X-ray excitation is shorter than 450 ps. The results will give a guidance for optimizing the properties of γ-CuI single crystal as an ultrafast scintillator. [ABSTRACT FROM AUTHOR]

This paper reports the effects of Au codoping on the scintillation and optical properties of BaBrCl:Eu single crystals grown by the Bridgman-Stockbarger method. The study, performed by varying both Eu and Au concentrations, demonstrates the highly effective role of Au codoping for improving the scintillation light output for all the considered europium concentrations. These, up to trifold, improvements are accompanied by a substantial reduction in the long scintillation decay tails, and in the thermo- and optically stimulated luminescence intensities with respect to crystals doped only with Eu. The role of Au ions is discussed based on these experimental results. [ABSTRACT FROM AUTHOR]

LiAlO 2 can be considered as a good candidate for neutron scintillator host matrix due to the high Li content and high energy deposit of reaction of 6 Li isotope with neutron. Low density (2.75 g/cm 3 ) is of advantage to achieve low sensitivity of background gamma radiation in mixed radiation fields. Ti-doped LiAlO 2 shows relatively high neutron light yield comparable to that of the Li-glass standard neutron scintillator. At room temperature the Ti 4+ charge transfer (CT) luminescence at 375 nm with the 2.5 µs decay time is the leading emission process. Besides the CT luminescence host emission at shorter wavelengths (350 nm), defect-related emission at 440 nm and impurity Fe 3+ luminescence at 740 nm are observed. Their emission spectra, excitation spectra and decay kinetics including temperature dependences were studied. Luminescence mechanism in the material and interplay between the luminescence processes are discussed together with possible role of nonstoichiometry and Mg codoping. [ABSTRACT FROM AUTHOR]

Photoluminescence and thermally stimulated luminescence of Gd 3 (Ga,Al) 5 O 12 :Ce single crystals and epitaxial films co-doped with different concentrations of Mg 2+ ions are investigated in the 77–500 K temperature range under excitation in the 4f - 5d 1 and 4f - 5d 2 absorption bands of Ce 3+ ions. Influence of Mg 2+ ions on the photoluminescence intensity, spectrum, decay kinetics, temperature dependence of the photoluminescence intensity, and the activation energy of luminescence thermal quenching is observed. Co-doping with Mg 2+ is shown to result in a drastic reduction of the afterglow and thermally stimulated luminescence and in a strong shortening of the afterglow decay kinetics. It influences also defects creation spectra and the activation energy of the photostimulated defects creation. The Mg 2+ - induced changes in the characteristics of the Gd 3 (Ga,Al) 5 O 12 :Ce, Mg single crystals and epitaxial films are found to be strongly different, and possible reasons of these differences are discussed. [ABSTRACT FROM AUTHOR]

TlSr 2 I 5 : Eu 2+ is a newly discovered scintillator that show promising scintillation properties for X- and γ-ray spectroscopy applications. Two zone vertical Bridgman technique is used for the growth of this scintillator. Luminescence properties of the grown crystals are measured under X-ray excitation at room temperature. Pure and Eu 2+ doped crystals contained broad emission bands between 445 and 670 nm peaking at 528 nm and 430–600 nm peaking at 463 nm, respectively. Energy resolution, light yield and decay time profiles are studied under 662 keV γ-ray excitation using 137 Cs radioactive source. Energy resolution of 4.2% (FWHM) is obtained for 3 mol% Eu 2+ doped crystal. For the same sample, light yield of 70,000 ph/MeV is also obtained. Three and two decay constants are observed for the pure and Eu 2+ doped samples, respectively at room temperature. Effective Z-number and density are found to be 61 and 5.30 g/cm 3 , respectively. [ABSTRACT FROM AUTHOR]

The crystal growth procedure and luminescence properties of pure and Eu 2+ -doped BaBrI and SrBrI crystals are reported. Emission and excitation spectra were recorded under ultraviolet and vacuum ultraviolet excitations. The energy of the first Eu 2+ 4f-5d transition and SrBrI band gap are obtained. The electronic structure calculations were performed within GW approximation as implemented in the Vienna Ab Initio Simulation Package. The energy between lowest Eu 2+ 5d state and the bottom of conduction band are found based on luminescence quenching parameters. The vacuum referred binding energy diagram of lanthanide levels was constructed using the chemical shift model. [ABSTRACT FROM AUTHOR]

A fast scintillation crystal, γ-CuBr, was successfully grown by hydrothermal method with NH 4 Br mineralizer. The element mole ratio of the Cu/Br crystal was about 0.91 caused by the crystal grown in a rich bromine environment. Under ultraviolet excitation, the crystal exhibited an intense 420 nm emission, a shoulder emission at 428 nm and a weak broadband emission at 560 nm, which could be related to free exciton recombination, Cu and Br vacancies, respectively. Furthermore, the X-ray excited optical luminescence of the crystal was first reported, and a strong 430 nm emission was observed. The analysis of luminescence decay kinetics revealed that the 430 nm emission is composed of two components with an average decay time of 36.9 ns. It means that the γ-CuBr crystal is a promising candidate for applications in fast radiation detection. [ABSTRACT FROM AUTHOR]

CaMoO 4 single crystal with high quality and large size was grown by Bridgman method. The as-grown CaMoO 4 crystal presents blue-black color, and the annealed CaMoO 4 crystal presents optically transparent. The mechanisms of crystal fading by thermal annealing were explained in detail. The annealing effects on the optical transmission, photoluminescence spectra, X-ray luminescence spectra and luminescence decay time were investigated. The results indicate that thermal annealing not only has positive effects on reducing oxygen vacancies and alleviating the self-absorption phenomenon, but also the luminescent intensity can be enhanced greatly. The annealed CaMoO 4 crystal has moderate Stokes shift (1.46 eV). The light output of annealed CaMoO 4 single crystal by the excitation of 662 KeV X-ray from a 137 Cs source was measured to be 57.9 p.e. per MeV. This work offers detailed and significant data of scintillation properties of CaMoO 4 single crystal, which are very helpful for potential applications in searching for rare events especially in neutrinoless double beta decay area. [ABSTRACT FROM AUTHOR]

A good quality Zr:GdTaO 4 single crystal with an 8.84 g/cm3 density, higher than the well-known dense scintillator PbWO 4 , was successfully synthesized by the Czochalski method for the first time. The effective segregation coefficient of Zr in Zr:GdTaO 4 is 0.288. The light yield and the energy resolution of Zr:GdTaO 4 are approximately the same as GdTaO 4. The scintillation decay time of Zr:GdTaO 4 contains a fast decay of 9.51 ns, close to the fast scintillator PbWO 4 , and a slow decay of 755.61 ns, which is much faster than that of GdTaO 4 whose fast decay time is 101.82 ns and slow decay time is 3290.52 ns. With Zr4+ doping, the photoluminescence band of GdTaO 4 is blueshifted and the traps are shallowed, which may help accelerate the scintillation decay. As far as we know, the Zr:GdTaO 4 single crystal is the densest scintillator with a less than 10 ns scintillation decay time, which can be used in electromagnetic calorimeters. • A Zr:GdTaO 4 single crystal with an 8.84 g/cm3 density was first synthesized. • Zr:GdTaO 4 crystal contains a fast scintillation decay of 9.51 ns, close to PbWO 4. • Blueshifted luminescence band and shallowed trap accelerate the scintillation decay. [ABSTRACT FROM AUTHOR]

The luminescence and scintillation properties of gadolinium terbium aluminium garnet single crystalline films, Gd 3−x Tb x Al 5 O 12 , doped with Ce 3+ are investigated as a function of the Gd/Tb ratio with the aim of an improved understanding of the energy transfer processes between Ce 3+ and Tb 3+ ions in the aluminium garnet hosts. Upon replacing the Gd 3+ by Tb 3+ , the crystal field splitting for the 5d energy level of Ce 3+ does not change significantly, due to comparable sizes of the Gd 3+ and Tb 3+ cations. Temperature dependence of the decay time of Tb 3+ and Ce 3+ luminescence confirms an efficient energy transfer from the Tb 3+ to Ce 3+ and provides a qualitative understanding of this process. Furthermore, bidirectional energy transfer processes between the Ce 3+ and Tb 3+ are revealed. Scintillation decays under α-particles excitation show the presence of the fast and slow sub-microsecond components. [ABSTRACT FROM AUTHOR]

Single crystals of GdTaO 4 and GdTa 0.8 Nb 0.2 O 4 were grown by the Czochralski technique, and their luminescent and scintillation properties were studied. Both crystals demonstrate fast emission with decay time around 10 −8 s. Meanwhile, in GdTaO 4 the fast decay is accompanied by a huge build-up with the decay time around 1 μs, while in the mixed crystal the contribution of slow components is negligible. UV- and X-ray excited luminescence, curves of thermostimulated luminescence and absolute light yields of crystals are presented as well. GdTa 0.8 Nb 0.2 O 4 crystal is shown to be an ultradense (8.37 g/cm 3 ) and fast (shortest component decay time 17 ns) scintillator with a high stopping power. [ABSTRACT FROM AUTHOR]

Photo- and radioluminescence and thermally stimulated luminescence characteristics of Ce 3+ - doped and Ce 3+ , Mg 2+ co-doped Gd 3 (Ga,Al) 5 O 12 (GAGG) single crystals of similar composition are investigated in the 9–500 K temperature range. The Ce 3+ - related luminescence spectra and the photoluminescence decay kinetics in these crystals are found to be similar. Under photoexcitation in the Ce 3+ - and Gd 3+ - related absorption bands, no prominent rise of the photoluminescence intensity in time is observed neither in GAGG:Ce,Mg nor in GAGG:Ce crystals. The afterglow is strongly reduced in GAGG:Ce,Mg as compared to GAGG:Ce, and the afterglow decay kinetics is much faster. Co-doping with Mg 2+ results in a drastic decrease of the thermally stimulated luminescence (TSL) intensity in the whole investigated temperature range and in the appearance of a new complex Mg 2+ - related TSL glow curve peak around 285 K. After irradiation in the Ce 3+ - related 3.6 eV absorption band, the TSL intensity in GAGG:Ce,Mg is found to be comparable with that in the GAGG:Ce epitaxial film of similar composition. The Mg 2+ - induced changes in the concentration, origin and structure of the crystal lattice defects and their influence on the scintillation characteristics of GAGG:Ce,Mg are discussed. [ABSTRACT FROM AUTHOR]

We have developed CaF 2 translucent ceramics by spark plasma sintering (SPS) and investigated the scintillation and dosimeter properties, in comparison with a CaF 2 single crystal. Under X-ray irradiation, light emission was observed at 270 and 300 nm, due to self-trapped exciton (STE). The scintillation light yield of CaF 2 translucent ceramic was measured to be about 6000 photons/MeV under 137 Cs irradiation, and this value was smaller than that of the single crystal by a factor of approximately 2. The afterglow level, after X-ray irradiation, of the ceramic sample was lower than that of the single crystal. Thermally stimulated luminescence (TSL) glow peaks were observed at 100 and 150 °C in both ceramic and single crystal samples, however the TSL intensity was much stronger than that of the single crystal sample. [ABSTRACT FROM AUTHOR]

We have investigated Li 4 SiO 4 scintillation crystals for their possible application in neutron detection due to high Li content and low density of 2.35 g/cm 3 . The micro-pulling-down method employing the Ir crucible and afterheater was optimized for crystal growth of Li 4 SiO 4 taking into account the Li evaporation. To grow high-quality crack-free single crystals, the heating power was increased to establish milder temperature gradient, thicker meniscus, smaller crystal diameter and resulting smaller stress in the as-grown crystals. The undoped, Ti-, Cr-, and Al- doped crystals were prepared and studied. Radioluminescence measurements under X-ray excitation showed quite high overall scintillation efficiency of the Ti-doped sample reaching as high as 250% of that of Bi 4 Ge 3 O 12 reference scintillator. The emission spectrum was dominated by one broad band peaking at 350 nm related to Ti 4+ impurity. Reasonable light yield of 10000 photons/neutron was found. However, its long decay time of 54 μs might be a limitation especially for high counting rate applications. The overall scintillation efficiency of the Cr 3+ sample was much lower and the spectrum shows one broad peak at 463 nm which does not correspond to Cr 3+ luminescence. The radioluminescence spectrum of the Al-doped sample resembled to that of the Ti-doped one, just its magnitude is considerably lower, which was explained by Ti contamination. Peculiarities and optimization of crystal growth and a preliminary sketch of luminescence mechanisms and dopant incorporation are discussed. [ABSTRACT FROM AUTHOR]

The emissions of Ce3+ in Ce:YAG are at approximately 550 nm and are generated by the overlapping emission of two transitions 5d → 2F 5/2 (2F 7/2), and their luminescence characteristics are markedly influenced by temperature and ion fluence. In this study, the temperature and ion fluence dependence of Ce3+ emission was investigated using ion beam-induced luminescence (IBIL) at four different temperatures (25, 150, 300, and 450 °C), and potential theoretical explanations for the variation were discussed. Experimental results show that (1) as the temperature increases, the intensity of Ce3+ decreases, and the central peak position continues to redshift; (2) as the temperature rises, the proportion of the high-energy peak at approximately 2.3 eV continuously increases; (3) a double exponential model can describe the evolution of the Ce3+ luminescence intensity with fluence; and (4) the influence of 2 MeV H+ on the luminescence characteristics of Ce:YAG is limited. The luminescence characteristics of the Ce:YAG single crystal deteriorate when exposed to high temperatures. Combined with the observed experimental phenomena, we recommend that the practical operating temperature of the Ce:YAG single crystal in a high ion fluence environment should be as low as 150 °C when possible to ensure a high scintillation yield and good luminescence performance. • Acquiring real-time and in-situ luminescent data on Ce:YAG single crystal with IBIL. • Temperature has a significant influence on Ce:YAG performance than fluence. • Ionic excitation allows thermal quenching of Ce3+ at lower temperatures. • Evaluating the radiation resistance of samples with double exponential model. • The working temperature of Ce:YAG should not exceed 150 °C in high ion fluence. [ABSTRACT FROM AUTHOR]

(C 6 H 5 C 2 H 4 NH 3) 2 PbBr 4 single crystals substituted with various concentrations of In (5, 10, 25, and 50%) were grown by the solvent diffusion method, and the effect of In-substitution on photoluminescence (PL) and scintillation properties were investigated. PL and scintillation peaks due to excitons confined in inorganic layers were observed, and the decay times were consistent with those of the free excitonic luminescence. The photoluminescence quantum yields of the 5, 10, 25, and 50% In-substituted crystals were respectively 23.0, 24.7, 26.0, and 25.2%. The light yield of the 25% In-substituted crystal was estimated to be 14100 photons/MeV from the pulse height spectrum under 137Cs γ-rays irradiation. • In:(C 6 H 5 C 2 H 4 NH 3) 2 PbBr 4 crystals were grown by the solvent diffusion method. • Free excitonic luminescence was observed. • Light yield of the 25% In-substituted crystal was 14,100 photons/MeV. [ABSTRACT FROM AUTHOR]

The paper demonstrates our last achievement in development of the novel scintillating screens based on single crystalline films (SCF) of Ce doped multicomponent garnets using the Liquid Phase Epitaxy (LPE) method. We report in this work the optimized content and excellent scintillation properties of SCF of Lu 3-x Gd x Al 5-y Ga y O 12 , Lu 3-x Tb x Al 5-y Ga y O 12 and Tb x Gd x Al 5-y Ga y O 12 garnet compounds grown by the LPE method from PbO B 2 O 3 based melt-solution onto Gd 3 Al 2.5 Ga 2.5 O 12 and YAG substrates. We also show that the Tb 1.5 Gd 1.5 Al 2.5 Ga 2.5 O 12 :Ce SCF possess the highest light yield (LY) in comparison with all ever grown garnet SCF scintillators. Namely, the LY of these SCF exceeds by 3.8 and 1.85 times the LY values of the best samples of YAG:Ce and LuAG:Ce SCF scintillators, respectively. The SCF samples of the mentioned compounds show low thermoluminescence in the above room temperature range and relatively fast scintillation decay time t 1/e in the 180–200 ns range. [ABSTRACT FROM AUTHOR]

The luminescence and scintillation properties of Lu 0.8 Gd 1.2 SiO 5 :Ce and Lu 1.8 Gd 0.2 SiO 5 :Ce single crystals are compared. At 662 keV γ-rays, light yield (LY) value of 29,800 ph/MeV obtained for Lu 1.8 Gd 0.2 SiO 5 :Ce is much higher than that of 20,200 ph/MeV obtained for Lu 0.8 Gd 1.2 SiO 5 :Ce. The energy resolution of 6.0% obtained for Lu 0.8 Gd 1.2 SiO 5 :Ce is better than that of 7.7% for Lu 1.8 Gd 0.2 SiO 5 :Ce due to its better intrinsic resolution and proportionality of LY. The LY and energy resolution for α-rays, as well as a LY ratio under excitation with α- and γ-rays (α/γ ratio) are also determined. The intrinsic LY and light loss coefficient under excitation with α- and γ-rays are evaluated. The photofraction at 662 keV γ-rays is also determined and discussed. [ABSTRACT FROM AUTHOR]

Results of spectroscopic studies at ambient and high pressures of a LuAlO 3 :Ce3+ (LuAP:Ce) single crystalline film (SCF) as well as LuAP:Ce and YAlO 3 :Ce (YAP:Ce) single crystals are reported. Room temperature absorption measurements of the single crystals in the vacuum UV region allowed establishing the bandgap energies of 7.63 eV for YAP and 7.86 eV for LuAP, with an assumption of the direct band-gaps. Luminescence of Ce3+ in LuAP and YAP bulk crystals was measured as a function of temperature from 6 K up to 873 K. Temperature quenching of the Ce3+ luminescence in YAP:Ce was observed above 650 K, which is related to the location of the lowest Ce3+ 5d level at 1.27 eV below the conduction band minimum. No temperature quenching occurred in LuAP:Ce up to 873 K, mostly due to the lower energy of the 4f levels with respect to the valence band maximum. The barycenter energies and splittings of Ce3+ 5d states in YAP and LuAP at room temperature were precisely established. Theoretical calculations of the Ce3+ 5d states energy structure under pressure revealed a discrepancy between the obtained experimental results and the prediction of Dorenbos' theoretical model. The discrepancy can be removed if instead of the 5d state of the free Ce3+ ion the bandgap of the compound is taken as reference energy for the red-shift of the 5d level. This hypothesis also allows us to take into account the pressure-induced increase of the bandgap energy, expected for the studied compounds. Pressure dependences of LuAP:Ce luminescence spectra suggest that a certain type of phase transition occurs above 15 GPa. • Bandgap energies of YAP and LuAP from vacuum UV absorption spectra. • Position of Ce3+ levels in the band gap of YAP and LuAP. • High-pressure phase transition of LuAP, high-pressure luminescence of Ce3+ in YAP and LuAP. [ABSTRACT FROM AUTHOR]

Optical, scintillation, and dosimetric properties of the undoped and Tb-doped CaYAlO 4 single crystals grown by the floating zone method were evaluated. Several photoluminescence (PL) emission peaks due to the 4f–4f transitions of Tb3+ ion were observed at 385–620 nm under excitation at 250 nm in Tb-doped CaYAlO 4 samples. Under X-ray irradiation, scintillation peaks of the Tb-doped CaYAlO 4 crystals were consistent with the PL emission peaks. In terms of a dosimetric property, the 0.1% Tb-doped crystal exhibited the highest thermally stimulated luminescence intensity and the widest linear responses in the range of 0.01–1000 mGy among the samples. • The undoped and Tb-doped CaYAlO 4 single crystals were synthesized by the floating zone method. • The Tb-doped samples exhibited luminescence due to the 4f-4f transitions of Tb3+. • The 0.1% Tb-doped crystal exhibited the widest linear responses in the range of 0.01–1000 mGy among the samples in TSL. [ABSTRACT FROM AUTHOR]

The Tm-doped MgAl 2 O 4 single crystals were synthesized by using Xe arc lamps-equipped floating zone furnace. The synthesized crystals exhibited luminescence due to the 4f-4f transitions of Tm3+ in photoluminescence (PL), scintillation, and thermally stimulated luminescence (TSL). In all of PL, scintillation, and TSL, the 0.5% Tm-doped crystal showed the highest luminescence intensity. In TSL dose response functions, the 0.5% Tm-doped crystal showed sensitivity from X-ray irradiation with 0.1 mGy. In addition, we measured linear energy transfer (LET) dependence on TSL glow curve of the crystal and X-ray imaging test taken by TSL. We revealed the spatial resolution of the crystal was 100 μm. • We have characterized the photoluminescence, scintillation, and dosimetric properties of Tm-doped MgAl 2 O 4 single crystals. • All the crystals showed luminescence properties due to Tm3+ ion. • We revealed possibility of Tm-doped MgAl 2 O 4 crystal for personal dosimetry, 2D dosimetry, and heavy ion beam measurement. [ABSTRACT FROM AUTHOR]

Fast energy transfer from Yb2+ to Sm2+ is a requirement when using Yb2+ as a sensitiser for Sm2+ emission for near-infrared scintillator applications. This cannot be achieved through dipole-dipole interactions due to the spin-forbidden nature of the involved Yb2+ transition, making the rate of energy transfer too slow for application. This work explores whether exploiting the exchange interaction by increasing the Yb2+ concentration to 99% is an effective way to increase the rate at which energy is transferred from Yb2+ to Sm2+. The scintillation characteristics of CsYbBr 3 :1%Sm, CsYbI 3 :1%Sm and YbCl 2 :1%Sm single crystals were studied through 137Cs excited pulse height spectra, X-ray excited decay and X-ray excited luminescence spectra. An energy resolution of 7% and a light yield of 30,000 ph/MeV was achieved with CsYbI 3 :1%Sm. Photoluminescence spectroscopy and decay studies were performed to study the band structure and relaxation dynamics. • Energy transfer from Yb2+ to Sm2+ happens on a subnanosecond timescale. • Detection of 20,000 photons in the 662 keV photopeak for CsYbI 3 :1%Sm. • A 7% energy resolution was achieved with CsYbI 3 :1%Sm. • Sm2+ emission intensity of all samples is stable between 78 K and 700 K. [ABSTRACT FROM AUTHOR]

Hafnium-based materials are attractive for a scintillator owing to their high density and effective atomic number. In this study, single crystals of Ce-doped calcium hafnate perovskite (Ce:CaHfO 3) were synthesized from a Ca-rich composition, and photoluminescence (PL) and scintillation properties were investigated. The X-ray diffraction patterns revealed that the synthesized single crystals were a single phase of CaHfO 3. The Ce:CaHfO 3 exhibited blue luminescence at 430 nm and fast decay due to the 5d–4f transition of Ce3+ in both PL and scintillation. From the measurement of pulse height spectra under 137Cs irradiation, the highest light yield of 7800 photons/MeV was observed in the 3% Ce:CaHfO 3. • Single crystals of Ce-doped calcium hafnate perovskite (Ce:CaHfO 3) were successfully synthesized from a Ca-rich composition. • Ce:CaHfO 3 exhibited blue luminescence and fast decay due to the 5d–4f transition of Ce3+ in both PL and scintillation. • The light yield of 7800 photons/MeV was observed in the 3% Ce:CaHfO 3 under 137Cs gamma-ray irradiation. [ABSTRACT FROM AUTHOR]

A novel NIR emitting scintillator with 825 nm was developed by doping Sm2+ in Cs 4 Eu(Br,I) 6 crystal. The single crystals of Cs 4 Eu(Br,I) 6 :Sm were successfully grown by the Bridgman method. The crystal structure and valence state was approved by XRD and XPS methods. The luminescence properties and energy transfer were systematically investigated. The energy transfer mechanism is variable for different Sm2+ concentration. The PL decay profiles show that the Sm2+-related emission has fast decay of nanosecond. The proportion of fast decay can be tunable by adjusting Sm2+ doped concentration. The Sm2+ doped europium -host material will have a potential application for unclear detection as near-infrared (NIR) scintillators. • The novel NIR emitting Cs 4 Eu(Br,I) 6 :Sm scintillation crystals were successfully grown by the Bridgman method and the luminescence properties is tunable. • The proportion of nonradiative energy transfer from Eu2+ to Sm2+ was improved and the PLQY of Sm2+-related is up to 42.1%. • The fast decay time component of Sm2+ (50 ns) is up to 31.8% for Cs 4 Eu(Br,I) 6 : 3 mol%Sm crystal. • The proposed Sm2+ doped europium -host material principle is an effective method to develop near-infrared (NIR) scintillators for nuclear radiation detection. [ABSTRACT FROM AUTHOR]

The paper is devoted to investigation of the luminescent properties of Dy 3+ and Dy 3+ -Ce 3+ doped single crystalline films (SCF) grown by LPE method from PbO–B 2 O 3 flux. We have found that the YAG:Dy and YAG:Dy,Ce SCFs possess bright cathodoluminescence in the visible range and good scintillation figure of merit. For this reason LPE grown YAG:Dy and YAG:Dy,Ce SCF are proposed for different applications, namely, as cathodoluminescence screens or screens for microimaging. The Dy 3+ co-doping can be also proposed for improvement of the scintillation efficiency of the Ce 3+ doped garnet compounds in the SCF form due to Dy 3+ → Ce 3+ energy transfer and removing the trap related centers in the above RT range. [ABSTRACT FROM AUTHOR]

This study presents luminescence and scintillation properties of Silver doped LiI crystals. Single crystals of LiI: x% Ag ( x =0.02, 0.05, 0.1 and 0.5) were grown by using the Bridgman technique. X-ray induced luminescence spectra show emission bands spanning from 275 nm to 675 nm, dominated by Ag + band having a peak at 300 nm. Under UV-luminescence, a similar emission band was observed with the peak excitation wavelength of 265 nm. Energy resolution, light yield and decay time profiles of the samples were measured under a 137 Cs γ-ray irradiation. The LiI(0.1%Ag) showed the highest light yield and the best energy resolution among the samples. The light yield of LiI(0.1%Ag) is higher than commercially available LiI(Eu) crystal (15,000±1500 ph/MeV). The LiI(Ag) samples exhibit three exponential decay time components except the LiI(0.02%Ag), where the fitting found two decay time components. Temperature dependences of emission spectra, light yield and decay time were studied from 300 K to 10 K. The LiI(0.1%Ag) crystal showed an increase in the light yield and a shortening of decay time with a decrease in temperature.. [ABSTRACT FROM AUTHOR]

The optical and scintillation properties of Ce 3+ -doped YGd 2 Al 5− x Ga x O 12 ( x =2,3,4) single crystals were investigated. With increasing Ga content in the garnet host, the 5d 1 absorption and emission bands shift toward higher energy due to the decrease in the crystal field splitting of the 5d levels. Temperature dependences of absorption and emission spectra and of photoluminescence decays of both prompt and delayed components were measured. Light yield (LY) and its dependence on an amplifier shaping time were measured under excitation with γ-rays. High LY value of 38,000 photons/MeV was obtained for a YGd 2 Al 2 Ga 3 O 12 :Ce sample. Scintillation decay was measured with an extended dynamical and temporal scale under the nanosecond-pulsed soft X-ray excitation. The relative content of the fastest component in the scintillation response increases with increasing Ga content. [ABSTRACT FROM AUTHOR]

Multicomponent garnets (Y 3− x Gd x Al 5− y Ga y O 12 ) doped with Ce 3+ ions are promising scintillators with a high density, fast response time and high light yield. To deepen the knowledge about the transfer stage of scintillation mechanism we discuss the energy migration and energy transfer processes in the set of undoped and Ce 3+ activated multicomponent garnet single crystals. Temperature dependence of Gd 3+ emission intensities as well as decay kinetics in Y 3− x Gd x Al 5− y Ga y O 12 ( x , y =1,2,3) crystals point to the Gd 3+ →Gd 3+ nonradiative energy migration, which is diffusion limited. Concentration quenching of Gd 3+ emission occurs by energy migration to accidental impurities and/or structure defects. Temperature dependence of photoluminescence emission intensities and decay time measurements of Gd 3+ as well as Ce 3+ ions in Gd 3 Ga 3 Al 2 O 12 :Ce 3+ single crystal reveal nonradiative energy transfer Gd 3+ →Ce 3+ (including migration through Gd 3+ sublattice) which is responsible for slow Ce 3+ fluorescence decay component. [ABSTRACT FROM AUTHOR]

Mg2+-codoped Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce (YGAGG:Ce,Mg) single crystal was grown by the Czochralski method and its luminescence and scintillation properties were investigated. Temperature dependence of radioluminescence (RL) yield and photoluminescence (PL) decay time was measured, and activation energy of thermal ionization process was determined from temperature-dependent PL decay time measurement. YGAGG:Ce,Mg exhibited high X-ray excited RL yield almost 5 times higher than BGO reference scintillator. Its light yield of 41,500 ph/MeV and scintillation decay times of 12 ns (2%) + 52 ns (65%) + 207 ns (33%) were measured under excitation with 662 keV γ rays from 137Cs source. Afterglow and thermally stimulated luminescence characteristics are also investigated. • Luminescence and scintillation properties of Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce,Mg crystal are investigated. • Temperature dependence of photo-and radioluminescence are presented. • Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce,Mg shows high light yield of 41,500 photons/MeV. • Luminescence quenching above RT can be caused by thermal ionization. • Afterglow and thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

In this work, an anion-alloying strategy using chloride substitution is used to improve the gamma response performance of cutting-edge Cs 2 LiLaBr 6 :Ce single crystal scintillators. Single crystals of Cs 2 LiLa(Br , Cl) 6 :Ce (CLLBC:Ce) with a size of Ф12 mm × 50 mm were successfully grown by the Bridgman method. The effects of chloride substitution amount on crystal structure, band structure, luminescence properties and the scintillation properties were systematically investigated. The light yield and energy resolution of CLLB:Ce were enhanced as the increase of Cl− content. The highest light yield and optimal energy resolution were achieved on the Cs 2 LiLaBr 4 Cl 2 :Ce, about 86% of the commercial LaBr 3 :Ce single crystal and 4.1% at 662 keV. On a basis of the results of first-principle calculation and pure optical method, the band structures of Cs 2 LiLa(Br,Cl):Ce were constructed, indicating a tendency of band-gap to increase as the Cl− content increases. The origin of light yield improvement was also proposed. • The strategy of chloride substitution is used to improve the performance of Cs 2 LiLaBr 6 :Ce single crystal scintillators. • The results of first-principle calculation and pure optical method indicate that the band-gap becomes bigger as the Cl− content increases. • Cs 2 LiLaBr 4 Cl 2 :Ce shows the highest light yield and optimal energy resolution, about 86% of the commercial LaBr 3 :Ce single crystal and 4.1% at 662 keV. • The origin of light yield improvement was also proposed. [ABSTRACT FROM AUTHOR]