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We used the measurements of the photo-luminescence spectra vs photon pumping and Coulomb blockade charge tuning together with Kelvin probe microscopy to study piezo-electric fields in self-organized InP/GaInP2 quantum dots (QDs) having a strong Wigner localization regime. These exciton/electron state-filling measurements together with the surface potential imaging and the band structure calculations demonstrate a piezo-electric doping and type-I optical transitions induced in these dots by an atomic ordering (AO) of GaInP2. Our results clarify a critical role of AO in the formation of natural Wigner and anyon molecules and represent an important step for realization of the topological quantum gates using these QDs. [ABSTRACT FROM AUTHOR]

The effect of lattice relaxation instability (martensitic transition) on piezoelectric fields (EPE) in spontaneously ordered GaInP2/GaAs epitaxial layers was demonstrated using scanning Kelvin probe microscopy in combination with electron microscopy and optical spectroscopy measurements. The transition manifests itself in the dependence of the surface potential of the epi-layer on the mechanical (cleavage) and thermal (annealing) impacts. This is associated with a switching of the crystal lattice between relaxed and strained martensitic states, corresponding to a change in EPE in the epi-layer. The measured surface potential values (0.2–2.4 V) correspond to EPE within ±100 kV/cm and a strong decrease in |EPE| with increasing layer thickness, indicating the pinning of the Fermi level and piezoelectric doping. Our results open up the prospects for using spontaneously ordered semiconductor alloys to control electronic states in semiconductor nanostructures by controlling their piezoelectric fields. [ABSTRACT FROM AUTHOR]

We report non-contact local doping of a monolayer WSe2 transferred onto a piezoelectric substrate having surface potential wells (SPWs) induced by structural inhomogeneities. We used epitaxial GaN and InP/GaInP2 structures, in which there are SPWs ∼0.2 V deep and 0.1–2 μm in size. Using surface topography and potential scanning probe microscopy, as well as optical reflectance, photoluminescence, and Raman spectroscopy measurements, we observed strong enhancement of charged exciton emission and Raman intensity in the SPW regions of the monolayer WSe2, which indicate on piezoelectric doping at a level n ≥ 1012 cm−2 on a length scale ∼0.2–1 μm. Our results can be used to create electron/hole quantum puddles with anyon states in transition metal dichalcogenides, promising for the development of room temperature and magnetic-field-free fault-tolerant topological quantum computing. [ABSTRACT FROM AUTHOR]