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A non-destructive method for detecting sub-micrometer-sized micropipes on an entire wafer surface is investigated. Since it is difficult to detect sub-micrometer-sized micropipes due to their small core size, a non-destructively and accurately detecting method is required. To solve the issue, we focus on a characteristic depression generated around micropipes, namely, line-shaped depressions. In this paper, the location of line-shaped depressions is identified by using optical inspection, and the line-shaped depressions are distinguished whether micropipes exhibit line-shaped depression or not by using mirror electron microscope observation as high-resolution inspection. The accuracy of the distinction results is confirmed by scanning electron microscope observation, and electrical characteristics of the P–N diode are fabricated using the inspected wafer. Furthermore, the sub-micrometer-sized micropipes are observed at the sites of leakage current identified by emission microscopy. Additionally, device simulation of the blocking-voltage characteristics of P–N diodes suggests that the increase in leakage current depends on the electric field at the sub-micrometer-sized micropipes, regardless of their core size. [ABSTRACT FROM AUTHOR]

We investigated electron emission characteristics of a hafnium carbide [HfC(100)] single-crystal tip at various temperatures toward finding a candidate of the next generation of emitters for electron microscopes. The emission mode changed from cold-field emission (CFE) to low-temperature and high-temperature thermal-field emission and, finally, to extended Schottky emission. The energy width at full width of half maximum of the emitted electrons was 0.2 eV in the CFE mode at an angular current of 20 μA/sr, and it showed good emission stability with current noise less than 3.5% in an electron gun of a scanning electron microscope (SEM). Spatial resolution of the SEM at an acceleration voltage of 0.5 kV improved 14% by using the HfC(100)-CFE tip instead of a conventional W(310)-CFE tip. High monochromaticity and stable electron emission of the HfC(100)-CFE tip are suitable for the next generation of emitters for ultrahigh-resolution field emission SEMs. [ABSTRACT FROM AUTHOR]

The rapid growth of the field of time-resolved and ultrafast electron microscopy has been accompanied by the active development of new instrumentation. Recently, time-resolved microscopes equipped with a field emission gun have been introduced, demonstrating great potential for experiments that benefit from the high brightness and coherence of the electron source. Here, we describe a straightforward design of a time-resolved transmission electron microscope with a Schottky field emission gun and characterize its performance. At the same time, our design gives us the flexibility to alternatively operate the instrument as if it was equipped with a flat metal photocathode. We can, thus, effectively choose to sacrifice brightness in order to obtain pulses with vastly larger numbers of electrons than from the emitter if for a given application the number of electrons is a crucial figure of merit. We believe that our straightforward and flexible design will be of great practical relevance to researchers wishing to enter the field. [ABSTRACT FROM AUTHOR]

Standard samples with programed defects, designed to evaluate pattern inspection tools that use electron beams, were fabricated on 12-in. Si wafer. By using a structure with a conductive pattern on an insulator layer, scanning electron microscope (SEM) images with various pattern contrasts, depending on the charging effect, were obtained under different observation conditions. The impact of captured-image contrast on defect detection capability was examined using different types of inspection algorithm. It was found that the accuracy of critical dimension measurement, effectiveness of the charge suppression technique, and defect detection capability of the SEM tool, and its robustness could all be evaluated using this standard sample with a particular stacked structure. [ABSTRACT FROM AUTHOR]

The scanning electron microscope is becoming a popular tool to perform tasks that require positioning, manipulation, characterization, and assembly of micro-components. However, some of these applications require a higher level of performance with respect to dynamics and precision of positioning. One limiting factor is the presence of unidentified noises and disturbances. This work aims to study the influence of mechanical disturbances generated by the environment and by the microscope, identifying how these can affect elements in the vacuum chamber. To achieve this objective, a dedicated setup, including a high-resolution vibrometer, was built inside the microscope. This work led to the identification and quantification of main disturbances and noise sources acting on a scanning electron microscope. Furthermore, the effects of external acoustic excitations were analysed. Potential applications of these results include noise compensation and real-time control for high accuracy tasks. [ABSTRACT FROM AUTHOR]