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This book reveals the origin of the excellent properties of hydrogenated semiconductor materials and their great potential for nanoelectronics, renewable energy, and biological applications by systematically analysing the interrelationships and physical scenarios involved in hydrogenated surface engineering, structure, physical properties, and functions. This book addresses science-passionate readers like scientists and R&D engineers who are interested in synthesis, properties and applications of emerging hydrogenated semiconductor materials, providing them with a quick overview of the latest developments in these fields, and new ideas along with methods for their research works.

AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Devices based on disordered semiconductors have wide applications. It is difficult to imagine modern life without printers and copiers, LCD monitors and TVs, optical disks, economical solar cells, and many other devices based on disordered semiconductors. However, nowadays books that discuss disordered (amorphous, nanocrystalline, microcrystalline)

This multidisciplinary book inspires profound understanding of (well-illustrated) intimate relationships between physical parameters and statistical characteristics of confined acoustic phonons and phonon-like excitations in polycrystalline and spatially non-homogeneous amorphous semiconductors and insulators, related to them lattice strain and anisotropy (if any) in sound velocity, features of their near-band-gap and intra-gap electronic and optical characteristics, deformation potential(s), intensity of electron-phonon interactions, rates of the optically- and thermally-induced charge carrier transitions and interband recombination of those, and even key parameters of superconductivity in the heavily boron-doped diamond layers with different crystalline orientations.

Transparent flexible electronics is an emerging technology which makes use of wide band gap semiconductors that can be processed at low temperatures on glass or plastic substrates. Electronic systems that cover large area and curved surfaces together with transparency bring the possibility of numerous applications that are outside the scope of rigid wafer based electronics. Flexible electronics, electronic textiles, a wearable wellness system, and sensory skin are some of the applications of flexible electronics. The key factor in the realization of transparent electronics is the development of high performance fully transparent thin film transistors. Thin film transistors (TFTs) based on transparent conducting amorphous oxide semiconductors (TAOS) such as InGaZnO (IGZO), zinc tin oxide (ZTO), zinc indium tin oxide (ZITO), etc. provide additional functionalities like transparency, high field effect mobility and potential for room temperature processing. The performance of these TAOS based TFTs are superior to their silicon (a-Si:H TFTs) and organic TFTs. Though there are monographs and books on a-Si:H TFTs and organic TFTs, a book on TAOS based TFTs is rare. This book introduces the graduate students and beginners to the field of amorphous semiconductors. The mass production of this kind of TFTs on large area substrates involves the complications associated with controlling the composition of oxide compound semiconductor thin film material. Pulsed laser deposition allows for the growth of an oxide semiconductor in a very high oxygen rich environment while co-sputtering is an effective technique for the growth of a multicomponent film and to control the film chemical composition in a systematic and easy way. These manufacturing aspects will be of interest to those working in the industry. The review on the n channel, p channel TFTs, and the detailed description on the extraction of various TFT parameters like the threshold voltage, field effect mobility, sub threshold slope and on-off ratio etc. will be ready reckoner to those working in the field of transparent electronics.

Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions

Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in 1974. Scien­ tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon. Other scientists have developed new methods for growing these thin films while yet others have developed new photovoltaic (PV) device structures with im­ proved conversion efficiencies. In the last two years, several companies have constructed multi-megawatt manufacturing plants that can produce large-area, multijunction amorphous silicon PV modules. A growing number of people be­ lieve that thin-film photovoltaics will be integrated into buildings on a large scale in the next few decades and will be able to make a major contribution to the world's energy needs. In this book, Ruud E. I. Schropp and Miro Zeman provide an authoritative overview of the current status of thin film solar cells based on amorphous and microcrystalline silicon. They review the significant developments that have occurred during the evolution of the technology and also discuss the most im­ portant recent innovations in the deposition of the materials, the understanding of the physics, and the fabrication and modeling of the devices.

Understanding the structural unit of crystalline solids is vital in determining their optical and electronic properties. However, the disordered nature of amorphous semiconductors, where no long-range order is retained, makes it difficult to determine their structure using traditional methods. This book shows how computer modelling can be used to overcome the difficulties that arise in the atomic scale identification of amorphous semiconductors. The book explains how to generate a random structure using computer modelling, providing readers with the techniques to construct realistic material structures. It shows how the optical and electronic properties are related to random structures. Readers will be able to understand the characteristic features of disordered semiconductors. The structural and electronic modifications by photon irradiation are also discussed in detail. This book is ideal for both physicists and engineers working in solid state physics, semiconductor engineering and electrical engineering.

This book provides a comprehensive overview of the chalcogenide glass science and various applications based on the glasses. It starts with a review on the glass-forming ability of various systems, followed by a discussion on the structural and physical properties of various chalcolgenide glasses and their application in integrated optics. The chap

Research on glassy semiconductors continues to expand every year. This is evidenced by the ever-increasing number of articles devoted to glassy semiconductors and published in a great variety of periodicals. The time has come to systematize and generalize the abundant published experimental material. The first review of the experimental data on glass formation and the physicochemical and physical properties of chalcogenide glassy semi­ conductors was published by B. T. Kolorniets [1]. Glass formation in chalcogenide systems is the subject of a section in a monograph by Rawson [2]. In 1972 the Leningrad University published the author's books [3] dealing with the regularities of glass formation in cha1cogenide systems and containing a systematized exposition of some physicochemical properties of glassy cha1cogenide semiconductors. The monograph presented mainly results of research performed by the Semiconductor Chemistry Laboratory staff of the Leningrad University. These investigations were started at the initiative and under the dircction of Professor R. L. Myuller and wcre continued under the author's direction. The present monograph is a revised and substantially supplementcd version of the aforementioned publication. However, the extensive experimental material in the literature is far from completely presented. It contains mainly data on the research performed by the staff of the laboratory headed by the author. However, data obtained by other Soviet and foreign workers are represented to a greater degree in this book than in the preceding edition.

This is the second volume in the NATO ASI series dealing with the topic of hydrogen in solids. The first (V. B76, Metal Hydrides) appeared five years ago and focussed primarily on crystalline phases of hydrided metallic systems. In the intervening period, the amorphous solid state has become an area of intense research activity, encompassing both metallic and non-metallic, e.g. semiconducting, systems. At the same time the problem of storage of hydrogen, which motivated the first ASI, continues to be important. In the case of metallic systems, there were early indications that metallic glasses and disordered alloys may be more corrosion resistant, less susceptible to embrittlement by hydrogen and have a higher hydrogen mobility than ordered metals or intermetallics. All of these properties are desirable for hydrogen storage. Subsequent research has shown that thermodynamic instability is a severe problem in many amorphous metal hydrides. The present ASI has provided an appropriate forum to focus on these issues.

Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Cryst

This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Physics of Disordered Materials, are our way of paying special tribute to Sir Nevill Mott and to express our heartfelt wishes to him on the occasion of his eightieth birthday. Sir Nevill has set the highest standards as a physicist, teacher, and scientific leader. Our feelings for him include not only the respect and admiration due a great scientist, but also a deep affection for a great human being, who possesses a rare combination of outstanding personal qualities. We thank him for enriching our lives, and we shall forever carry cherished memories of this noble man. Scientists best express their thanks by contributing their thoughts and observations to a Festschrift. This one honoring Sir Nevill fills three volumes, with literally hundreds of authors meeting a strict deadline. The fact that contributions poured in from all parts of the world attests to the international cohesion of our scientific community. It is a tribute to Sir Nevill's stand for peace and understanding, transcending national borders. The editors wish to express their gratitude to Ghazaleh Koefod for her diligence and expertise in deciphering and typing many of the papers, as well as helping in numerous other ways. The blame for the errors that remain belongs to the editors.

This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Localization and Metal-Insulator Transitions, are our way of paying special tribute to Sir Nevill Mott and to express our heartfelt wishes to him on the occasion of his eightieth birthday. Sir Nevill has set the highest standards as a physicist, teacher, and scientific leader. Our feelings for him include not only the respect and admiration due a great scientist, but also a deep affection for a great human being, who possesses a rare combination of outstanding personal qualities. We thank him for enriching our lives, and we shall forever carry cherished memories of this noble man. Scientists best express their thanks by contributing their thoughts and observations to a Festschrift. This one honoring Sir Nevill fills three volumes, with literally hundreds of authors meeting a strict deadline. The fact that contributions poured in from all parts of the world attests to the international cohesion of our scientific community. It is a tribute to Sir Nevill's stand for peace and understanding, transcending national borders. The editors wish to express their gratitude to Ghazaleh Koefod for her diligence and expertise in deciphering and typing many of the papers, as well as helping in numerous other ways. The blame for the errors that remain belongs to the editors.

Twenty-four years ago, Hellmut Fritzsche came to our laboratory to evaluate our work in amorphous materials. He came many times, sometimes bringing his violin to play with our youngest son, to talk, to help, to discover, and to teach. The times with him were always exciting and rewarding. There was a camaraderie in the early years that has continued and a friendship that has deepened among Iris and me and Hellmut, Sybille and their children. The vision that Hellmut Fritzsche shared with me, the many important contributions he made, the science that he helped so firmly to establish, the courage he showed in the time of our adversity, and the potential that he recognized put all of us in the amorphous field, not only his close friends and collaborators, in his debt. He helped make a science out of intuition, and played an important role not only in the experimental field but also in the basic theoretical aspects. It has been an honor to work with Hellmut through the years.

Solid state physics after solving so successfully many fundamental problems in perfect or slightly imperfect crystals, tried in recent years to attack problems associated with large disorder with the aim to understand the consequences of the lack of the long-range order. Semiconductors are much more changed by disorder than metals or insulators, and appear to be the most suitable materials for fundamental work. Considerable exploratory work on amorphous and liquid semiconductors was done by the Leningrad School since the early fifties. In recent years, much research in several countries was directed to deepen the understanding of the structural, electronic, optical, vibrational, magnetic and other proper­ ties of these materials and to possibly approach the present level of under­ standing of crystalline semiconductors. This effort was stimulated not only by purely scientific interest but also by the possibility of new applications from which memory devices in the general sense are perhaps the most challenging. The research met with serious difficulties which are absent in crystals.

'Amorphous Chalcogenide Semiconductors and Glasses'describes developments in the science and technology of this class of materials. This book offers an up-to-date treatment of chalcogenide glasses and amorphous semiconductors from basic principles to applications while providing the reader with the necessary theoretical background to understanding the material properties technology of this class of materials. This book offers an up-to-date treatment of chalcogenide glasses and amorphous semiconductors from basic principles to applications while providing the reader with the necessary theoretical background to understanding the material properties. Chalcogenides form a special class of materials, which have one or more of the elements from the chalcogen group, Group VI in the Periodic Table (S, Se. or Te) as a constituent; the chalcogen is mixed with other elements to form various'new'compounds and alloys. Chalcogenides are noncrystalline solids because their structure is'amorphous'or'glassy'. Such structures have totally different properties than crystalline solids. Chalcogenide glasses have a number of very interesting and useful properties, which have been already exploited in the commercialization of new devices.

Provides a summary of non-equilibrium glassy and amorphous structures and their macro- and microscopic thermal properties. The book contains a carefully selected works of fourteen internationally recognized scientists involving the advances of the physics and chemistry of the glassy and amorphous states.

Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterization and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.

This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of the observed effects in xerography, digital radiography and for optical data storage.

This book highlights the achievements of the self-taught inventor, scientist, manufacturer and entrepreneur, Stanford R Ovshinsky. This remarkable individual could, without special training, compete with the well-funded establishments of learning and industry in the second half of the last century and leave us an incredible legacy of brilliant innovations with a lasting impact on our lives. His achievements extend over amazingly diverse fields and have or are prone to create new industries of great societal value.The phase change memories of commonly used rewritable CDs and DVDs as well as of new flash memories are his invention; so are the Ni Metal hydride batteries which are the enabling batteries for electric and hybrid/electric vehicles. The future hydrogen economy will utilize his efficient and safe hydrogen storage alloys. He has developed light and ultralight photovoltaic solar panels for converting sunlight into electricity and built the largest manufacturing facility for thin film flexible solar roofing materials. A common theme of his inventions is the synthesis of new materials utilizing novel aspects of structural and compositional disorder.The book explains for each of Ovshinsky's innovations the essence of his pioneering ideas and inventions. These introductions are followed by a selection of Ovshinsky's seminal publications and, for each subject category, a list of his patents which reveal the inventive mind of this unusually creative person. Ovshinsky's example of gaining a deep understanding of the science underlying his inventions, his perseverance as well as his ability to attract and inspire talented collaborators will be a role model for entrepreneurs of this century.

A review summarising the current state of research in the field, bridging the gaps in the existing literature. All the chapters are written by world leaders in research and development and guide readers through the details of photo-induced metastability and the results of the latest experiments and simulations not found in standard monographs on this topic. A useful reference not only for graduates but also for scientific and industrial researchers. With a foreword of Kazunobu Tanaka

Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems. In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical and their technological aspects. Starting with Volume 30, the title of the series, Thin Films, is being changed to Thin Films and Nanostructures. We feel that this new titlereflects more accurately the rapidly growing inclusion of research anddevelopment efforts on nanostructures, especially in relation to novel solid-state device formats

Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems. In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical and their technological aspects. Volume 29 consists of chapters pulled from Hari Singh Nalwa's forthcoming Handbook of Thin Film Materials (ISBN: 0-12-512908-4). The chapters were selected because they deal exclusively with amorphous film structures and because they have a common relevance to semiconductor, or electronic, devices and circuits. These are subjects not yet stressed in the Thin Films series.

This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.

Semiconductors and Semimetals

This comprehensive, detailed treatise on the physics and applications of the new emerging technology of amorphous semiconductors focuses on specific device research problems such as the optimization of device performance. The first part of the book presents hydrogenated amorphous silicon type alloys, whose applications include inexpensive solar cells, thin film transistors, image scanners, electrophotography, optical recording and gas sensors. The second part of the book discusses amorphous chalcogenides, whose applications include electrophotography, switching, and memory elements. This book will serve as an excellent reference source for solid state scientists and engineers, and as a useful self-contained introduction to the field for graduate students.