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A K-Band stacked-field-effect transistor (FET) power amplifier (PA) with high linearity and superior temperature stability is implemented in 90 nm trap-rich high-resistance SOI-CMOS technology. The PA adopts a two-stacked-FET architecture and low loss coplanar waveguide (CPW) matching networks to improve the RF output power and power-added efficiency (PAE). The PA with an area of 0.63 mm2 demonstrates a peak power gain of 14.6 dB at 23.5 GHz, a saturated output power of 14.2 dBm with a 3 dB bandwidth of 6 GHz and a peak PAE of 23.5 percent. The measured output third intercept point (OIP3) of 28.4 dBm represents a high linearity feature for 5G communication applications. The RF characteristics at different temperatures from -40°C to 125°C demonstrate superior temperature stability for automotive radar applications. [ABSTRACT FROM AUTHOR]

The article discusses the use of bandwidth to improve single-stage distributed amplifier with the use of a Chebyshev polynomial to express the transducer power gain. It states that the conventional distributed amplifiers are formed by artificial transmissions and conventional single-stage distributed amplifier. In addition, the metal semiconductor field effect transistor has gate capacitance of the transistor to improve the bandwidth of the single-stage distributed amplifier.

This article explores the importance of taking due care in setting up DC IV measurement sweep rate for the case of a GaAs MESFET and a silicon MOSFET. A numerical metric, called the normalized difference unit, is shown to be useful in determining appropriate delay factor settings for obtaining robust measurements using a Keithley 4200 DC parameter analyzer. The MESFET device initially exhibited erroneous measurements in the knee region, due to slow trapping effects, while only thermal effects are evident in the MOSFET results.

Suggests that with GaAs MESFET technology advances, large-signal MESFET models are needed. Prediction of performance by large-signal MESFET models; Simulation of pulsed IV curves, S-parameters and RF performance of a pulse-doped GaAs MESFET; Implementation of the model in the industry standard ADS and MWO simulators.

Presents an automated system for observing the dependence of the IV characteristics of gallium arsenide (GaAs) metal semiconductor field-effect transistors devices on electric field, frequency and thermal effects. Measurement system employed to investigate the frequency, electric field and temperature dependency of GaAs; Dependency of the IV characteristics of the device on the electric field conditions; Function of the pseudo-random drain-source dynamic destination values.

Reports on the design and test data of a generic 2.5 watts, two-state, C-band MMIC power amplifier developed using the multi-function self-aligned gate (MSAG) metal-semiconductor field-effect transistor (MESFET) process. Design and performance of field-effect transistors; Improvement of MMIC amplifier design; Approach in fabricating the 2.5 power amplifier chip using the ion-implanted, planar refractory gate, MESFET MMIC process MSAG; Details on the test of the C-band MMIC amplifier chips. INSETS: TABLE I;TABLE II;TABLE III.

The article discusses the advantages of Gallium Arsenide (GaAs) Metal Semiconductor Field Effect Transistor (MESFET)-based switches. It states that these electronic devices continue to deliver high broadband performance and can handle moderate power levels. It notes that they are ideal for battery-powered applications and portable devices. It adds that they are also convenient and cost effective since they can be used at low voltages.

The article offers information on an application note issued by WJ Communications Inc. regarding the reliability of gallium-arsenide (GaAs) MESFET at high operating temperatures. Several factors involved in main failure mechanisms include gate metallization and source/drain contracts. The paper shows the relation between MESFET reliability and channel temperature.

Presents information on a white paper from Agilent Technologies Inc. about low-noise amplifiers (LNAs). Significance of metal semiconductor field-effect transistors and pseudomorphic high electron mobility transistors to the design of LNAs; Use of the Agilent ATF-54143 in the design research; Simulation method used in the study.

This article provides information on Toshiba's TG2217CBT gallium-arsenide metal semiconductor field-effect transistors, which provide switchover from 0 to 3 gigahertz and are suitable for Bluetooth, global systems for mobile communications, global positioning systems, and wireless-local area network applications with multimode, multiband needs. The single point diamond turning integrated circuit operates with a nominal 2.6 volts control voltage and a minimum 2.4 volts. The device has an insertion loss of just 0.35 dB at 1 gigahertz and 0.40 dB at 2 gigahertz, while isolation is 24 dB through 2 gigahertz. The 1X1X0.38-millimeter, six-lead chip-scale device, which can handle power levels of 17 dBm at 2.5 gigahertz, is priced at 20 cents.

The article profiles Carver Mead, who built the first gallium arsenide metal semiconductor field-effect transistor and revolutionized very large scale integration circuit design. The article presented a personal and educational background on Mead, as well as his key contributions to electronics engineering through his pioneer work in neural networks. The article also presented Mead's views on engineering and science and technology.

Presents a historical background on the silicon-on-sapphire metal-semiconductor field effect transistor device developed by John Eshbach and Se Puan Yu together with their team at General Electric in Syracuse, New York. Information on the device.

Reports on Taejon, South Korea's Electronics and Telecommunications Research Institute's (ETRI) development of a key part for handheld mobile devices. Development of gallium arsenide (GaAs) power metal semiconductor field-effect transistor (MESFET); Difference of device from one developed by Matsushita Electric Co. Ltd.

Reports on Cree Research Inc.'s development of a silicon-carbide-based n-channel metal-semiconductor field effect transistor (MESFET) capable of producing 53-Watts of output power at a frequency of 3.0-Gigahertz. Target area of applications for the device; Cree's development of MESFET under contract from US Navy's Naval Research Laboratories; Current power density of the MESFET.