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Start Over Author "Ishida, Takao" Publication Type Trade Publications
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1. GAN HEMT TECHNOLOGIES FOR SPACE AND RADIO APPLICATIONS.

Author

ISHIDA, TAKAO

Subjects
*MODULATION-doped field-effect transistors, *POWER amplifiers, *GALLIUM nitride, *MICROELECTRONICS, *SEMICONDUCTOR industry
Abstract

The article focuses on the use of gallium nitride-based high electron mobility transistor (GaN HEMT) technology in the development of a high power added efficiency (PAE) process for space and radio applications. It highlights the advantages of using GaN HEMT technology which include increased PAE and high operating voltage. It describes a design of a 100-watt high power amplifier (HPA) employing GaN HEMT technology for C-band space application which revealed a 67 percent PAE.

Published
2011

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