1. A 3 TO 5 GHZ ULTRA-WIDEBAND LOW NOISE AMPLIFIER USING INGAP/INGAAS ENHANCEMENT-MODE PHEMT TECHNOLOGY.
- Author
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Chiu, H. C., Cheng, C. S., Wei, C. C., Shih, Y. J., Lin, S. W., and Chien, F. T.
- Subjects
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INDUSTRIAL engineering , *TECHNOLOGICAL innovations , *TELECOMMUNICATION systems , *ULTRA-wideband devices , *SOUND analyzers , *AUDIO amplifiers , *AUDITING standards , *ELECTRON mobility , *MOISTURE - Abstract
A 3 to 5 GHz ultra-wideband (UWB) resistive shunt-feedback low noise amplifier (LNA) was demonstrated by using a In0.5Ga0.5P/InGaAs enhancement-mode (E-mode) pseudomorphic high electron mobility transistor (PHEMT) for the first time. The resistive shunt-feedback achieves a wideband input matching with a small noise figure (NF) degradation, because the Q-factor of the narrow band LNA input terminal is reduced. In this article, a low NF for a InGaP/InGaAs E-mode PHEMT LNA can be demonstrated, because the In0.5Ga0.5P Schottky layer design provides low DX-center related defects and low oxidization rate with moisture. The measured results show a 15 dB gain from 3 to 5 GHz, and the input/output return losses are both less than 10 dB. The minimum noise figure is 3.43 dB at 4.5 GHz and is less than 3.6 dB over the 3 to 5 GHz band. An input third-order intercept point (IIP3) of-8.5 dBm and an output third-order intercept point (O1P3) of 9.7 dBm were obtained, while consuming 21 mA from a 3 V DC supply. [ABSTRACT FROM AUTHOR]
- Published
- 2008