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Face recognition pipelines have been widely deployed in various mission-critical systems in trust, equitable and responsible AI applications. However, the emergence of adversarial attacks has threatened the security of the entire recognition pipeline. Despite the sheer number of attack methods proposed for crafting adversarial examples in both digital and physical forms, it is never an easy task to assess the real threat level of different attacks and obtain useful insight into the key risks confronted by face recognition systems. Traditional attacks view imperceptibility as the most important measurement to keep perturbations stealthy, while we suspect that industry professionals may possess a different opinion. In this paper, we delve into measuring the threat brought about by adversarial attacks from the perspectives of the industry and the applications of face recognition. In contrast to widely studied sophisticated attacks in the field, we propose an effective yet easy-to-launch physical adversarial attack, named AdvColor, against black-box face recognition pipelines in the physical world. AdvColor fools models in the recognition pipeline via directly supplying printed photos of human faces to the system under adversarial illuminations. Experimental results show that physical AdvColor examples can achieve a fooling rate of more than 96% against the anti-spoofing model and an overall attack success rate of 88% against the face recognition pipeline. We also conduct a survey on the threats of prevailing adversarial attacks, including AdvColor, to understand the gap between the machine-measured and human-assessed threat levels of different forms of adversarial attacks. The survey results surprisingly indicate that, compared to deliberately launched imperceptible attacks, perceptible but accessible attacks pose more lethal threats to real-world commercial systems of face recognition., Comment: 19 pages, 12 figures

Anti-spoofing detection has become a necessity for face recognition systems due to the security threat posed by spoofing attacks. Despite great success in traditional attacks, most deep-learning-based methods perform poorly in 3D masks, which can highly simulate real faces in appearance and structure, suffering generalizability insufficiency while focusing only on the spatial domain with single frame input. This has been mitigated by the recent introduction of a biomedical technology called rPPG (remote photoplethysmography). However, rPPG-based methods are sensitive to noisy interference and require at least one second (> 25 frames) of observation time, which induces high computational overhead. To address these challenges, we propose a novel 3D mask detection framework, called FASTEN (Flow-Attention-based Spatio-Temporal aggrEgation Network). We tailor the network for focusing more on fine-grained details in large movements, which can eliminate redundant spatio-temporal feature interference and quickly capture splicing traces of 3D masks in fewer frames. Our proposed network contains three key modules: 1) a facial optical flow network to obtain non-RGB inter-frame flow information; 2) flow attention to assign different significance to each frame; 3) spatio-temporal aggregation to aggregate high-level spatial features and temporal transition features. Through extensive experiments, FASTEN only requires five frames of input and outperforms eight competitors for both intra-dataset and cross-dataset evaluations in terms of multiple detection metrics. Moreover, FASTEN has been deployed in real-world mobile devices for practical 3D mask detection., Comment: 13 pages, 5 figures. Accepted to NeurIPS 2023

In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical characteristics and satisfactory reliability. Our studies show that La, a CMOS compatible metal, is promising to lower GaN HEMT S/D contact resistance. La's low work function (3.5 eV) is beneficial for reducing the barrier between the metals and GaN. The Ohmic contact formation mechanism involved was shown to be different from conventional Ti/Al films. Spherical-shaped high-La regions formed near the surface during annealing. La diffuses into the AlGaN layer, and the overlap of La and Al peaks is significantly increased compared with that before annealing.