Search

The critical behavior of Ga1-xMnxAs in a close vicinity of the Curie temperature was experimentally studied by using the thermal diffusivity measurements. Taking into account that the inverse of the thermal diffusivity has the same critical behavior as the specific heat, the critical exponent {\alpha} for the samples investigated has been determined. With approaching close to the critical temperature, the crossover from the mean-field-like to the Ising-like critical behavior has been observed. From the crossover behavior the values of the Ginzburg number and the exchange interaction length in Ga1-xMnxAs with different concentrations of Mn were determined., Comment: 17 pages, 5 figures

Specific heat measurements were used to study the magnetic phase transition in Ga1-xMnxAs. Two different types of Ga1-xMnxAs samples have been investigated. The sample with a Mn concentration of 1.6% shows insulating behavior, and the sample with a Mn concentration of 2.6% is metallic. The temperature dependence of the specific heat for both samples reveals a pronounced lambda-shaped peak near the Curie temperature, which indicates a second-order phase transition in these samples. The critical behavior of the specific heat for Ga1-xMnxAs samples is consistent with the mean-field behavior with Gaussian fluctuations of the magnetization in the close vicinity of TC., Comment: 12 pages, 5 figures

The temperature-dependent photoluminescence (PL) spectra of zinc oxide (ZnO) nanocrystals deposited inside the ultraviolet (UV) opal were studied. ZnO was grown in the voids between FCC packed silicon dioxide spheres using spray pyrolysis under ultrasonic vibration in the solution containing a zinc nitrate precursor. The ZnO nanoparticles inside opal matrix with UV photonic band-gap exhibit suppression of the excitonic emission and enhancement of the deep level emission. Suppression of the excitonic lines is due to the inhibition of spontaneous emission, while enhancement and broadening of the DL emission in the green spectral region is due to Purcell effect. The infiltration of ZnO inside the photonic crystal may be a useful technique to increase its emission efficiency in the selected spectral region., Comment: 22 pages, 4 figures

We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x = 0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga1-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga1-xMnxAs eventually disappears, and paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in Ga1-xMnxAs (x = 0.085) has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma [Phys.Rev.Lett. 88, 247202 (2002)]., Comment: 15 pages, 5 figures. Phys. Rev. B (to be published)