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Terahertz (THz) detector has great potential for use in imaging, spectroscopy, and communications due to its fascinating interactions between radiation and matter. However, current THz detection devices have limitations in sensitivity, operating frequency range, and bulky footprint. While recent ferroelectric-integrated graphene plasmonic devices show promise in overcoming these limitations, they are not yet extended to the THz range. Here, we propose a wavelength-sensitive terahertz detector that uses a single layer graphene integrated onto the ferroelectric thin film with patterned polarization domains. This device works at room temperature, with high responsivity and detectivity by coupling graphene plasmons with THz frequencies through spatial modulation of carrier behaviors using ferroelectric polarization, without requiring additional local electrodes. By reconfiguring an interweaving squared ferroelectric domain array with alternating upward and downward polarizations to highly confine graphene surface plasmon polaritons, our device achieves an ultrahigh responsivity of 1717 A W-1 and a normalized detectivity of 1.07*10^13 Jones at a resonance frequency of 6.30 THz and a 0.3 V bias voltage. We also show that the device makes possible for spectrum reconstruction application of portable spectrometer combining the mathematical algorithms., Comment: 17 pages, 5 figures

Colloidal semiconductor quantum dots (QDs) are excellent luminescent nanomaterials for a broad range of optoelectronic applications. Their photoluminescence blinking, however, hinders their practical use in many aspects. It has been shown that coupling QDs to plasmonic nanostructures may provide a viable way to suppress blinking. Nevertheless, the underlying mechanism of blinking suppression remains unclear and debated. Here, by deterministically coupling a single QD to a plasmonic nanocavity, we clarify the mechanism of blinking suppression, and demonstrate unprecedentedly bright emission from a single colloidal QD. In particular, we report for the first time that the coupled system exhibits nonblinking photoluminescence with blinking lifetime, which shows that the elimination of photoluminescence blinking originates from enhanced quantum yield of the charged states. We identify that the radiative decay rate is boosted from (48 ns)-1 to (0.7 ns)-1, which outcompetes Auger processes and enables similar quantum yields for charged and neutral excitons. Moreover, we demonstrate ultrabright photoluminescence of up to 17 million detected photons per second from a single QD. This work sheds new light on the goal of achieving ultrabright nonblinking QDs and may benefit a variety of QD-based applications., Comment: 17 pages; 3 figures

Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical vapor deposition (CVD) method, we demonstrate controlled synthesis of high-quality and atom-thin tellurides with lateral size over 300 {\mu}m. We found that the as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscope (STEM). The low-temperature transport measurements revealed a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2. This work paves the way to the synthesis of atom-thin tellurides and also quantum spin Hall devices.