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We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliably to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits., Comment: 5 figures

We demonstrate an efficient nonlinear photodetector (NLPD) with quadratic response based on a few-layer InSe p-n homojunction, which is beneficial from the strong second harmonic generation (SHG) process in InSe and effective harvest of photocarriers actuated by the high-quality homojunction. The NLPD can sense light with photon energy smaller than InSe electronic bandgap because the SHG process in InSe doubles the frequency of incident light, extending InSe photodetection wavelength range to 1750 nm. The InSe p-n homojunction, which is electrostatically doped by two split back gates, presents a rectification ratio exceeding 106 with a dark current down to 2 pA and a high normalized responsivity of 0.534 A/W2 for the telecom-band pulsed light at 1550 nm. The photocurrents of the SHG-assisted photodetection have a quadratic dependence on the optical powers, making the NLPD highly sensitive to light intensity variation with improved spatial resolution. As examples, the NLPD is employed to precisely determine the localization point of a focused laser beam waist and implement spatial imaging with an improved resolution compared with the linear photodetector. These features highlight the potential of the proposed NLPD in developing advanced optical sensing and imaging systems.