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Measurements of the millimeter wave surface resistance of grain-aligned YBa2Cu3O(x) bulk material grown by a liquid phase process are reported. The measurements were performed by replacing the endplate of a TE011 cylindrical copper cavity with the superconducting sample. Surface resistance was measured for samples with surfaces oriented perpendicular and parallel to the c-axis of the grains. It is shown that, for the parallel configuration, the surface resistance at 77 K and 80 GHz is typically near 100 milliohms. For a very well-aligned sample with a very low density of Y2BaCuO(y) precipitates, measured in the perpendicular configuration, the transition width (10-90 percent) is about 2 K, and the surface resistance is less than 50 milliohms at 88 K. The effect of microstructure on surface resistance is discussed.

Measurements are reported of the millimeter-wave surface resistance of grain-aligned YBa2Cu3O(x) bulk material grown by a liquid-phase process. The measurements were performed by replacing the endplate of a TE(011) cylindrical copper cavity with the superconducting sample. Surface resistance was measured for samples with surfaces oriented perpendicular and parallel to the c-axis of the grains. For the parallel configuration, the surface resistance at 77 K and 80 GHz is given. For a very well-aligned sample with a very low density of Y2BaCuO(y) precipitates, measured in the perpendicular configuration, the transition width (10-90 percent) is about 2 K and the surface resistance is derived at 88 K. The effect of microstructure on surface resistance is discussed.

Measurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.

Radio frequency (RF) surface resistance measurement experiments on high T(sub c) thin films were performed. The method uses a microstrip resonator comprising a top gold conductor strip, an alumina dielectric layer, and a separate superconductivity ground plane. The surface resistance of the superconducting ground plane can be determined, with reference to a gold calibration standard, from the measured quality factor of the half-wave resonator. Initial results near 7 GHz over the temperature range from 25 to 300 K are presented for YBa2Cu3O(7-x) and Bi2Sr2CaCu2O(8-y) thin film samples deposited by an electron beam flash evaporation process. The RF surface resistance at 25 K for both materials in these samples was found to be near 25 milliohms.

An electron beam flash evaporation technique is described which reproduces the stoichiometry of superconducting YBa(2)Cu(3)O(x) (123), Bi(2)CaSr(2)Cu(2)O(y) (2122), and Bi(2)Ca(2)Sr(2)Cu(3)O(z) (2223) source powders. Films of each material deposited with this technique exhibit zero resistance temperatures of 78 K or above when furnace annealed; 75 K zero temperatures are obtained for 123 films in situ annealed with atomic oxygen at 775 C. Transport critical current densities are 10,000 A/sq cm in 25-micron stripes patterned from 123 films, and 60,000 A/sq cm in 1-mm stripes of 2122 and 2223 films using a 1-microV/mm measurement criteria. Typical normal state resistivities are 700 micro-ohm cm for 2122 and 2223 films and 5 micro-ohm cm for 123 films. The 2122 films are highly textured with the c axis normal to the substrate. All results are for films deposited on MgO.