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Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects.

Superconductivity in topological insulators is expected to show very unconventional features such as $p+ip$ order parameter, Majorana fermions etc. However, the intrinsic superconductivity has been observed in a very limited number of materials in which the pairing symmetry is still a matter of debate. Here, we study the topological crystalline insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te, where a peculiar insulator to superconductor transition was previously reported near the gap inversion transition, when the system is nearly a 3-dimensional Dirac semimetal. Both the existence of superconductivity near the 3-dimensional Dirac semimetal and the occurrence of insulator to superconductor transition in an isotropic material is highly unusual. We suggest that the observed phenomena are related to an intrinsic instability of a 3-dimensional Dirac semimetal state in (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te and "flattening" of the bulk valence and conduction bands as they acquire a Mexican hat-like dispersion on the inverted side of the phase diagram. This favors the pairing instability if the chemical potential is pinned to these flat regions., Comment: 9 pages, 5 figures

In high-temperature cuprate superconductors, the anti-ferromagnetic spin fluctuations are thought to have a very important role in naturally producing an attractive interaction between the electrons in the $d$-wave channel. The connection between superconductivity and spin fluctuations is expected to be especially consequential at the overdoped end point of the superconducting dome. In some materials, that point seems to coincide with a Lifshitz transition, where the Fermi surface changes from the hole-like centered at ($\pi, \pi$) to the electron-like, centered at the $\Gamma$ point causing a loss of large momentum anti-ferromagnetic fluctuations. Here, we study the doping dependence of the electronic structure of Bi$_{1.8}$Pb$_{0.4}$Sr$_2$CuO$_{6+\delta}$ in angle-resolved photoemission and find that the superconductivity vanishes at lower doping than at which the Lifshitz transition occurs. This requires a more detailed re-examination of a spin-fluctuation scenario., Comment: 6 pages, 3 Figures, 1 Table

In the present work, we investigate the electronic structure of the two-dimensional (2D) ferromagnet Cr2Ge2Te6 by photoemission spectroscopy and ab initio calculations. Our results demonstrate the presence of multiple hole-type bands in the vicinity of the Fermi level indicating that the material can support high electrical conductivity by manipulating the chemical potential. Also, our photon energy dependent angle resolved photoemission experiment revealed that several of the hole bands exhibit weak dispersion with varied incident photon energy providing experimental signature for its two dimensionality. These findings can pave the way for further studies towards the application of Cr2Ge2Te6 in electronic devices., Comment: 8 pages, 3 figures

Ferromagnetic van der Waals (vdW) insulators are of great scientific interest for their promising applications in spintronics. It has been indicated that in the two materials within this class, CrI$_3$ and VI$_3$, the magnetic ground state, the band gap, and the Fermi level could be manipulated by varying the layer thickness, strain or doping. To understand how these factors impact the properties, a detailed understanding of the electronic structure would be required. However, the experimental studies of the electronic structure of these materials are still very sparse. Here, we present the detailed electronic structure of CrI$_3$ and VI$_3$ measured by angle-resolved photoemission spectroscopy (ARPES). Our results show a band-gap of the order of 1 eV, sharply contrasting some theoretical predictions such as Dirac half-metallicity and metallic phases, indicating that the intra-atomic interaction parameter (U) and spin-orbit coupling (SOC) were not properly accounted for in the calculations. We also find significant differences in the electronic properties of these two materials, in spite of similarities in their crystal structure. In CrI$_3$, the valence band maximum is dominated by the I 5{\it p}, whereas in VI$_3$ it is dominated by the V 3{\it d} derived states. Our results represent valuable input for further improvements in the theoretical modeling of these systems., Comment: 8 pages, 4 figures

Mixing of topological states with superconductivity could result in topological superconductivity with the elusive Majorana fermions potentially applicable in fault-tolerant quantum computing. One possible candidate considered for realization of topological superconductivity is thin bismuth films on Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212). Here, we present angle-resolved and core-level photoemission spectroscopy studies of thin Bi films grown {\it in-situ} on as-grown Bi2212 that show the absence of proximity effect. We find that the electron transfer from the film to the substrate and the resulting severe underdoping of Bi2212 at the interface is a likely origin for the absence of proximity effect. We also propose a possible way of preventing a total loss of proximity effect in this system. Our results offer a better and more universal understanding of the film/cuprate interface and resolve many issues related to the proximity effect., Comment: 6 pages, 4 figures

We report the temperature-dependent optical conductivity and ARPES studies of the iron-based superconductor (SC) Sr$_{0.67}$Na$_{0.33}$Fe$_2$As$_2$ in the high-temperature tetragonal paramagnetic phase; below the structural and magnetic transitions at $T_{\rm N}\simeq$125 K in the orthorhombic spin-density-wave (SDW)-like phase, and $T_r\simeq$42 K in the reentrant tetragonal double-Q magnetic phase where both charge and SDW order exist; and below the SC transition at $T_c\simeq$10 K. The free-carrier component in the optical conductivity is described by two Drude contributions; one strong and broad, the other weak and narrow. The broad Drude component decreases dramatically below $T_{\rm N}$ and $T_r$, with much of its strength being transferred to a bound excitation in the mid-infrared, while the narrow Drude component shows no anomalies at either of the transitions, actually increasing in strength at low temperature while narrowing dramatically. The behavior of an infrared-active mode suggests zone-folding below $T_r$. Below $T_c$ the dramatic decrease in the low-frequency optical conductivity signals the formation of a SC energy gap. ARPES reveals hole-like bands at the center of the Brillouin zone (BZ), with both electron- and hole-like bands at the corners. Below $T_{\rm N}$, the hole pockets at the center of the BZ decrease in size, consistent with the behavior of the broad Drude component; while below $T_r$ the electron-like bands shift and split, giving rise to a low-energy excitation in the optical conductivity at ~20 meV. The magnetic states, with resulting SDW and charge-SDW order, respectively, lead to a significant reconstruction of the Fermi surface that has profound implications for the transport originating from the electron and hole pockets, but appears to have relatively little impact on the SC in this material., Comment: 11 pages with 6 figures; 7 pages of supplementary material

The effects of structural supermodulation with the period $\lambda \approx26$ \AA \ along the $b$-axis of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ have been observed in photoemission studies from the early days as the presence of diffraction replicas of the intrinsic electronic structure. Although predicted to affect the electronic structure of the Cu-O plane, the influence of supermodulation potential on Cu-O electrons has never been observed in photoemission. In the present study, we clearly see, for the first time, the effects on the Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ electronic structure - we observe a hybridization of the intrinsic bands with the supermodulation replica bands in the form of avoided crossings and a corresponding reconstruction of the Fermi surface. We estimate the hybridization gap, $2\Delta_h\sim25$ meV in the slightly underdoped samples. The hybridization weakens with doping and the anti-crossing can no longer be resolved in strongly overdoped samples. In contrast, the shadow replica, shifted by $(\pi, \pi)$, is found not to hybridize with the original bands within our detection limits., Comment: 6 pages, 4 figures

In high-temperature cuprate superconductors, superconductivity is accompanied by a "plethora of orders", and phenomena that may compete, or cooperate with superconductivity, but which certainly complicate our understanding of origins of superconductivity in these materials. While prominent in the underdoped regime, these orders are known to significantly weaken or completely vanish with overdoping. Here, we approach the superconducting phase from the more conventional highly overdoped side. We present angle-resolved photoemission spectroscopy (ARPES) studies of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) single crystals cleaved and annealed in ozone to increase the doping all the way to the metallic, non-superconducting phase. We show that the mass renormalization in the antinodal region of the Fermi surface, associated with the structure in the quasiparticle self-energy, that possibly reflects the pairing interaction, monotonically weakens with increasing doping and completely disappears precisely where superconductivity disappears. This is the direct evidence that in the overdoped regime, superconductivity is determined by the coupling strength. A strong doping dependence and an abrupt disappearance above the transition temperature ($T_{\mathrm c}$) eliminate the conventional phononic mechanism of the observed mass renormalization and identify the onset of spin-fluctuations as its likely origin., Comment: 8 pages, 4 figures

In cuprate superconductors, the doping of carriers into the parent Mott insulator induces superconductivity and various other phases whose characteristic temperatures are typically plotted versus the doping level $p$. In most materials, $p$ cannot be determined from the chemical composition, but it is derived from the superconducting transition temperature, $T_\mathrm{c}$, using the assumption that $T_\mathrm{c}$ dependence on doping is universal. Here, we present angle-resolved photoemission studies of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$, cleaved and annealed in vacuum or in ozone to reduce or increase the doping from the initial value corresponding to $T_\mathrm{c}=91$ K. We show that $p$ can be determined from the underlying Fermi surfaces and that $in-situ$ annealing allows mapping of a wide doping regime, covering the superconducting dome and the non-superconducting phase on the overdoped side. Our results show a surprisingly smooth dependence of the inferred Fermi surface with doping. In the highly overdoped regime, the superconducting gap approaches the value of $2\Delta_0=(4\pm1)k_\mathrm{B}T_\mathrm{c}$, Comment: 8 pages, 4 figures

The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust, isoelectronic, and share the same structure with black phosphorus. We measured the band structure of SnSe and found highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown a great promise.

High-resolution angle-resolved photoelectron spectroscopy is used to examine the electronic band structure of FeTe$_{0.5}$Se$_{0.5}$ near the Brillouin zone center. A consistent separation of the $\alpha_{1}$ and $\alpha_{2}$ bands is observed with little $k_{z}$ dependence of the $\alpha_{1}$ band. First-principles calculations for bulk and thin films demonstrate that the antiferromagnetic coupling between the Fe atoms and hybridization-induced spin-orbit effects lifts the degeneracy of the Fe $d_{xz}$ and $d_{yz}$ orbitals at the zone center leading to orbital ordering. These experimental and computational results provide a natural microscopic basis for the nematicity observed in the Fe-based superconductors., Comment: 11 pages, 4 figures, 20 references

We report a new, cleavable, strong-topological-metal, Zr2Te2P, which has the same tetradymite-type crystal structure as the topological insulator Bi2Te2Se. Instead of being a semiconductor, however, Zr2Te2P is metallic with a pseudogap between 0.2 and 0.7 eV above the fermi energy (EF). Inside this pseudogap, two Dirac dispersions are predicted: one is a surface-originated Dirac cone protected by time-reversal symmetry (TRS), while the other is a bulk-originated and slightly gapped Dirac cone with a largely linear dispersion over a 2 eV energy range. A third surface TRS-protected Dirac cone is predicted, and observed using ARPES, making Zr2Te2P the first system to realize TRS-protected Dirac cones at M points. The high anisotropy of this Dirac cone is similar to the one in the hypothetical Dirac semimetal BiO2. We propose that if EF can be tuned into the pseudogap where the Dirac dispersions exist, it may be possible to observe ultrahigh carrier mobility and large magnetoresistance in this material.

A long-standing issue in topological insulator research has been to find a material that provides an ideal platform for characterizing topological surface states without interference from bulk electronic states and can reliably be fabricated as bulk crystals. This material would be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, have high surface state electronic mobility, and be growable as large, high quality bulk single crystals. Here we show that this major materials obstacle in the field is overcome by crystals of lightly Sn-doped Bi1.1Sb0.9Te2S (Sn-BSTS) grown by the Vertical Bridgeman method, which we characterize here via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies of the bulk and surface states, and X-ray diffraction and Raman scattering. We present this new material as a bulk topological insulator that can be reliably grown and studied in many laboratories around the world., Comment: 21 pages, 5 figures

A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi$_4$Se$_3$. Angle-resolved photoemission spectroscopy and \textit{ab initio} calculations reveal partial gapping of surface bands on the Bi$_2$Se$_3$-termination of Bi$_4$Se$_3$(111), where an 85 meV gap along $\bar{\Gamma}\bar{K}$ closes to zero toward the mirror-invariant $\bar{\Gamma}\bar{M}$ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin-helicity., Comment: 5 pages, 3 figures

We used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi$_2$Se$_3$ and Bi$_{0.5}$Sb$_{1.5}$Te$_{3-x}$Se$_{x}$. Our goal was to identify the "spin plasmon" predicted by Raghu and co-workers [S. Raghu, et al., Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carrers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface, $\chi "(\textbf{q},\omega)$, at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggests that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role., Comment: 5 pages, 4 figures

The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin $1/2$ particles with a definite projection of spin on momentum) -- a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the first observation of chiral magnetic effect through the measurement of magneto-transport in zirconium pentatelluride, ZrTe_5. Our angle-resolved photoemission spectroscopy experiments show that this material's electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. The observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background., Comment: 15 pages, 5 figures

To achieve and utilize the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TI),it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely used approach. But it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr$_{0.08}$(Bi$_{0.1}$Sb$_{0.9}$)$_{1.92}$Te$_3$. Simultaneous visualization of the Dirac-mass gap $\Delta(r)$ reveals its intense disorder, which we demonstrate directly is related to fluctuations in $n(r)$, the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of $\Delta(r)$ consistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship $\Delta(r)\propto n(r)$ is confirmed throughout, and exhibits an electron-dopant interaction energy $J^*$=145$meV\cdot nm^2$. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal-symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

We show that a small number of intentionally introduced defects can be used as a spectroscopic tool to amplify quasiparticle interference in 2H-NbSe$_{2}$, that we measure by scanning tunneling spectroscopic imaging. We show from the momentum and energy dependence of the quasiparticle interference that Fermi surface nesting is inconsequential to charge density wave formation in 2H-NbSe$_{2}$. We demonstrate that by combining quasiparticle interference data with additional knowledge of the quasiparticle band structure from angle resolved photoemission measurements, one can extract the wavevector and energy dependence of the important electronic scattering processes thereby obtaining direct information both about the fermiology and the interactions. In 2H-NbSe$_{2}$, we use this combination to show that the important near-Fermi-surface electronic physics is dominated by the coupling of the quasiparticles to soft mode phonons at a wave vector different from the CDW ordering wave vector., Comment: Main text: 13 pages, 4 figures (single column). In this version: More references included, larger figures. First version did not contained the supplementary material. This version includes the supplementary material within the same file (8 pages, 7 figures)

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe$_2$ was identified.

Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material., Comment: Work presented at the March Meeting of American Physical Society in Denver on March 3, 2014

A comparative study of the properties of topological insulator Bi2Te2Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 x 1014 cm-3. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (EF) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, that the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near EF. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed., Comment: 24 pages, 7 figures

Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries and supercapacitors. Intercalation involves complex diffusion processes along and across the layers, but the microscopic mechanisms and dynamics of these processes are not well understood. Here we report on a novel mechanism for intercalation and entrapment of alkali-atoms under epitaxial graphene. We find that the intercalation is adjusted by the van der Waals interaction, with the dynamics governed by defects anchored to graphene wrinkles. Our findings are relevant for the future design and application of graphene-based nano-structures. Similar mechanisms can also play a role for intercalation of layered materials., Comment: 8 pages, 7 figures in published form, supplementary information available

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should remain coherent and significantly spin polarized at ambient temperatures. Here, we studied the coherence and spin-structure of the topological states on the surface of a model topological insulator, Bi2Se3, at elevated temperatures in spin and angle-resolved photoemission spectroscopy. We found an extremely weak broadening and essentially no decay of spin polarization of the topological surface state up to room temperature. Our results demonstrate that the topological states on surfaces of topological insulators could serve as a basis for room temperature electronic devices., Comment: 5 pages, 3 figures

Topological crystalline insulators represent a novel topological phase of matter in which the surface states are protected by discrete point group-symmetries of the underlying lattice. Rock-salt lead-tin-selenide alloy is one possible realization of this phase which undergoes a topological phase transition upon changing the lead content. We used scanning tunneling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES) to probe the surface states on (001) Pb$_{1-x}$Sn$_{x}$Se in the topologically non-trivial (x=0.23) and topologically trivial (x=0) phases. We observed quasiparticle interference with STM on the surface of the topological crystalline insulator and demonstrated that the measured interference can be understood from ARPES studies and a simple band structure model. Furthermore, our findings support the fact that Pb$_{0.77}$Sn$_{0.23}$Se and PbSe have different topological nature., Comment: 5 pages, 4 figures

We describe the topological surface states of Bi$_4$Se$_3$, a compound in the infinitely adaptive Bi$_2$-Bi$_2$Se$_3$ natural superlattice phase series, determined by a combination of experimental and theoretical methods. Two observable cleavage surfaces, terminating at Bi or Se, are characterized by angle resolved photoelectron spectroscopy and scanning tunneling microscopy, and modeled by ab-initio density functional theory calculations. Topological surface states are observed on both surfaces, but with markedly different dispersions and Kramers point energies. Bi$_4$Se$_3$ therefore represents the only known compound with different topological states on differently terminated surfaces., Comment: 5 figures references added Published in PRB: http://link.aps.org/doi/10.1103/PhysRevB.88.081108

25 years after discovery of high-temperature superconductivity (HTSC) in La$_{2-x}$Ba$_x$CuO$_4$ (LBCO), the HTSC continues to pose some of the biggest challenges in materials science. Cuprates are fundamentally different from conventional superconductors in that the metallic conductivity and superconductivity are induced by doping carriers into an antiferromagnetically ordered correlated insulator. In such systems, the normal state is expected to be quite different from a Landau-Fermi liquid - the basis for the conventional BCS theory of superconductivity. The situation is additionally complicated by the fact that cuprates are susceptible to charge/spin ordering tendencies, especially in the low-doping regime. The role of such tendencies on the phenomenon of superconductivity is still not completely clear. Here, we present studies of the electronic structure in cuprates where the superconductivity is strongly suppressed as static spin and charge orders or stripes develop near the doping level of $x =1/8$ and outside of the superconducting dome, for $x<0.055$. We discuss the relationship between the stripes, superconductivity, pseudogap and the observed electronic excitations in these materials., Comment: 8 pages, 13 figures. arXiv admin note: substantial text overlap with arXiv:cond-mat/0612672

We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating Bi$_2$ layers and Bi$_2$Se$_3$ layers; the inclusion of S allows the growth of large crystals, with the formula Bi$_4$Se$_{2.6}$S$_{0.4}$. The crystals cleave along the interfaces between the Bi$_2$ and Bi$_2$Se$_3$ layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the $\Gamma$ point of the surface Brillouin zone, with the spin structure indicating that this material is a topological insulator., Comment: published version, 5 pages, 4 figures

Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon doping, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf k}-splitting originates from the large spin-orbit coupling and results in a Rashba-type behavior, unequivocally demonstrated here via the spin analysis. The spin helicities of the lowest laying Rashba doublet and the adjacent topological surface state alternate in a left-right-left sequence. This spin configuration sets constraints to inter-band scattering channels opened by electron doping. A detailed analysis of the scattering rates suggests that intra-band scattering dominates with the largest effect coming from warping of the Fermi surface.

In their comment Calandra \textit{et al} \cite{Calandra}, assert two points: (1) the estimate of charge transfer from Li to graphene layers in LiC$_6$ in our letter \cite{Pan2011c} is incorrect because of the three dimensional (3D) character of the electronic structure in bulk LiC$_6$; (2) our main claim that the superconductivity in graphite intercalation compounds (GICs) is graphene-sheet-driven is therefore invalid., Comment: 1 page, 1 Fig

The guarding game is a game in which several cops try to guard a region in a (directed or undirected) graph against Robber. Robber and the cops are placed on the vertices of the graph; they take turns in moving to adjacent vertices (or staying), cops inside the guarded region, Robber on the remaining vertices (the robber-region). The goal of Robber is to enter the guarded region at a vertex with no cop on it. The problem is to determine whether for a given graph and given number of cops the cops are able to prevent Robber from entering the guarded region. Fomin et al. [Fomin, Golovach, Hall, Mihalak, Vicari, Widmayer: How to Guard a Graph? Algorithmica 61(4), 839--856 (2011)] proved that the problem is NP-complete when the robber-region is restricted to a tree. Further they prove that is it PSPACE-complete when the robber-region is restricted to a directed acyclic graph, and they ask about the problem complexity for arbitrary graphs. In this paper we prove that the problem is E-complete for arbitrary directed graphs.

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi$_2$Se$_3$, by high resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state's dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room temperature electronic devices., Comment: published version, 5 pages, 4 figures

Dirac-like surface states on surfaces of topological insulators have a chiral spin structure that suppresses back-scattering and protects the coherence of these states in the presence of non-magnetic scatterers. In contrast, magnetic scatterers should open the back- scattering channel via the spin-flip processes and degrade the state's coherence. We present angle-resolved photoemission spectroscopy studies of the electronic structure and the scattering rates upon adsorption of various magnetic and non-magnetic impurities on the surface of Bi$_2$Se$_3$, a model topological insulator. We reveal a remarkable insensitivity of the topological surface state to both non-magnetic and magnetic impurities in the low impurity concentration regime. Scattering channels open up with the emergence of hexagonal warping in the high-doping regime, irrespective of the impurity's magnetic moment., Comment: 5 pages, 4 figures

We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi$_2$Se$_3$, a model topological insulator. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of $k_z=Z$ plane of the bulk Brillouin zone. The spin-resolved measurements in that region indicate a very high degree of spin polarization of the surface state, $\sim 0.75$, much higher than previously reported. Our results demonstrate that the topological surface state on Bi$_2$Se$_3$ is highly spin polarized and that the dominant factors limiting the polarization are mainly extrinsic., Comment: published version, 4 pages, 4 figures

We have performed photoemission studies of the electronic structure in LiC$_6$ and KC$_8$, a non-superconducting and a superconducting graphite intercalation compound, respectively. We have found that the charge transfer from the intercalant layers to graphene layers is larger in KC$_8$ than in LiC$_6$, opposite of what might be expected from their chemical composition. We have also measured the strength of the electron-phonon interaction on the graphene-derived Fermi surface to carbon derived phonons in both materials and found that it follows a universal trend where the coupling strength and superconductivity monotonically increase with the filling of graphene $\pi^{\ast}$ states. This correlation suggests that both graphene-derived electrons and graphene-derived phonons are crucial for superconductivity in graphite intercalation compounds., Comment: 4 pages, 3 figures

The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T-dependence is observed for T < 50 K, which is either metallic, or insulating, depending on the filling factor nu. The metal-insulator transition (MIT) occurs at nu_c ~ 0.65 and in the regime of the dissipative transport, where the longitudinal resistance Rxx > R_K/2. The critical resistivity (Rxx per square) is rho_xx(nu_c) ~ R_K/2 and is correlated with the appearance of zero plateau in Hall conductivity sigma_xy(nu) and peaks in sigma_xx(nu). This leads us to construct a universal low-T (n, B) phase diagram of this quantum phase transition., Comment: 4 pages, 5 figures

We present a combined analysis of neutron scattering and photoemission measurements on superconducting FeSe(0.5)Te(0.5). The low-energy magnetic excitations disperse only in the direction transverse to the characteristic wave vector (1/2,0,0), whereas the electronic Fermi surface near (1/2,0,0) appears to consist of four incommensurate pockets. While the spin resonance occurs at an incommensurate wave vector compatible with nesting, neither spin-wave nor Fermi-surface-nesting models can describe the magnetic dispersion. We propose that a coupling of spin and orbital correlations is key to explaining this behavior. If correct, it follows that these nematic fluctuations are involved in the resonance and could be relevant to the pairing mechanism., Comment: 4 pages, 4 figures; accepted version

We studied the unusual Quantum Hall Effect (QHE) near the charge neutrality point (CNP) in high-mobility graphene sample for magnetic fields up to 18 T. We observe breakdown of the delocalized QHE transport and strong increase in resistivities $\rho_{xx},|\rho_{xy}|$ with decreasing Landau level filling for $\nu < 2$, where we identify two insulating regimes. For $1 \gtrsim |\nu| \gtrsim 1/2$ we find an exponential increase of $\rho_{xx,xy} \sim e^{a(H-H_c)}$ within the range up to several resistance quanta $R_K$, while the Hall effect gradually disappears, consistent with the Hall insulator (HI) with local transport. Then, at $\nu \approx 1/2$ a cusp in $\rho_{xx}(H)$ followed by an onset of even faster growth indicates transition to a collective insulator (CI) state. The likely candidate for this state is a pinned Wigner crystal., Comment: 4 pages, 4 figures, revised version

We use angle-resolved photoemission spectroscopy (ARPES) to investigate the electronic properties of the newly discovered iron-arsenic superconductor, Ba(1-x)K(x)Fe2As2 and non-supercondcuting BaFe2As2. Our study indicates that the Fermi surface of the undoped, parent compound BaFe$_2$As$_2$ consists of hole pocket(s) at Gamma (0,0) and larger electron pocket(s) at X (1,0), in general agreement with full-potential linearized plane wave (FLAPW) calculations. Upon doping with potassium, the hole pocket expands and the electron pocket becomes smaller with its bottom approaching the chemical potential. Such an evolution of the Fermi surface is consistent with hole doping within a rigid band shift model. Our results also indicate that FLAPW calculation is a reasonable approach for modeling the electronic properties of both undoped and K-doped iron arsenites., Comment: 4 pages, 3 figures

Superconductivity in graphite intercalated compounds has been studied for more than 40 years and it is still not fully understood, despite the recent progress and the discovery of relatively high Tc superconductivity in CaC6 and YbC6. Recent studies now suggest that the electron-phonon coupling is most likely responsible for pairing and that the intercalant-derived electronic states and vibrations play the dominant role. Here, we present the first studies of electronic structure in CaC6, a superconductor with Tc=11.6 K. Using angle-resolved photoemission spectroscopy, we find that, contrary to theoretical models, the EPC on the graphene-derived Fermi sheets is surprisingly strong, reflecting the interaction with high-frequency graphene-derived vibrations. Thus, in addition to the amazing properties in the charge-neutral state, graphene sheets also show surprises in the heavily doped regime: they may support strong pairing interactions and lead to superconductivity in compounds in which they are building blocks., Comment: 11 pages, 3 figures

The electronic structure of $p$-type doped \BiTe is studied by angle resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off the $\Gamma$-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of \BiTe. Successive time dependent ARPES measurement also reveals that the electron-like bands crossing E$_F$ near the $\underline{\Gamma}$ point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of \BiTe., Comment: 3 figures

We present studies of the electronic structure of La2-xBaxCuO4, a system where the superconductivity is strongly suppressed as static spin and charge orders or "stripes" develop near the doping level of x=1/8. Using angle-resolved photoemission and scanning tunneling microscopy, we detect an energy gap at the Fermi surface with magnitude consistent with d-wave symmetry and with linear density of states, vanishing only at four nodal points, even when superconductivity disappears at x=1/8. Thus, the non-superconducting, "striped" state at x=1/8 is consistent with a phase incoherent d-wave superconductor whose Cooper pairs form spin/charge ordered structures instead of becoming superconducting., Comment: This is the author's version of the work

We present an angle-resolved photoemission spectroscopy (ARPES) study of a Mott-Hubbard-type bismuth cobaltate system across a metal-insulator transition. By varying the amount of Pb substitution, and by doping with Sr or Ba cation, a range of insulating to metallic properties is obtained. We observe a systematic change in the spectral weight of the coherent and incoherent parts, accompanied by an energy shift of the incoherent part. The band dispersion also shows the emergence of a weakly dispersing state at the Fermi energy with increasing conductivity. These changes correspond with the changes in the temperature-dependent resistivity behavior. We address the nature of the coherent-incoherent parts in relation to the peak-dip-hump feature seen in cuprates superconductors.

In conventional metals, electron-phonon coupling, or the phonon-mediated interaction between electrons, has long been known to be the pairing interaction responsible for the superconductivity. The strength of this interaction essentially determines the superconducting transition temperature TC. One manifestation of electron-phonon coupling is a mass renormalization of the electronic dispersion at the energy scale associated with the phonons. This renormalization is directly observable in photoemission experiments. In contrast, there remains little consensus on the pairing mechanism in cuprate high temperature superconductors. The recent observation of similar renormalization effects in cuprates has raised the hope that the mechanism of high temperature superconductivity may finally be resolved. The focus has been on the low energy renormalization and associated "kink" in the dispersion at around 50 meV. However at that energy scale, there are multiple candidates including phonon branches, structure in the spin-fluctuation spectrum, and the superconducting gap itself, making the unique identification of the excitation responsible for the kink difficult. Here we show that the low-energy renormalization at ~50 meV is only a small component of the total renormalization, the majority of which occurs at an order of magnitude higher energy (~350 meV). This high energy kink poses a new challenge for the physics of the cuprates. Its role in superconductivity and relation to the low-energy kink remains to be determined., Comment: 13 pages, 4 figures

We have performed an angular-resolved photoemission study of underdoped, optimally doped and overdoped Bi$_{2}$Sr$_2$CaCu$_2$O$_{8+x}$ samples using a wide photon energy range (15 - 100 eV). We report a small and broad non-dispersive A$_{1g}$ peak in the energy distribution curves whose intensity scales with doping. We attribute it to a local impurity state similar to the one observed recently by scanning tunneling spectroscopy and identified as the oxygen dopants. Detailed analysis of the resonance profile and comparison with the single-layered Bi$_{2}$Sr$_2$CuO$_{6+x}$ suggest a mixing of this local state with Cu via the apical oxygens., Comment: 4 pages, 4 figures

The ab-plane optical properties of a cleaved single crystal of La_{2-x}Ba_xCuO_4 for x=1/8 (T_c ~ 2.4 K) have been measured over a wide frequency and temperature range. The low-frequency conductivity is Drude-like and shows a metallic response with decreasing temperature. However, below ~ 60 K, corresponding to the onset of charge-stripe order, there is a rapid loss of spectral weight below about 40 meV. The gapping of single-particle excitations looks surprisingly similar to that observed in superconducting La_{2-x}Sr_{x}CuO_4, including the presence of a residual Drude peak with reduced weight; the main difference is that the lost spectral weight moves to high, rather than zero, frequency, reflecting the absence of a bulk superconducting condensate., Comment: 4 pages, with 1 table and 3 figures

Very high energy resolution photoemission experiments on high quality samples of optimally doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ show new features in the low-energy electronic excitations. A marked change in the binding energy and temperature dependence of the near-nodal scattering rates is observed near the superconducting transition temperature, $T_C$. The temperature slope of the scattering rate measured at low energy shows a discontinuity at ~$T_C$. In the superconducting state, coherent excitations are found with the scattering rates showing a cubic dependence on frequency and temperature. The superconducting gap has a d-wave magnitude with negligible contribution from higher harmonics. Further, the bi-layer splitting has been found to be finite at the nodal point., Comment: 5 pages, 4 figures

We calculate the photoemission spectral response using the extracted $\alpha^2F$ of Zhou et al (cond-mat/0405130) as an input and we find that the reported Re$\Sigma$ has more strucure than physically possible. Therefore, the "fine structure" most likely reflects the experimental noise., Comment: Comment on cond-mat/0405130, "energy resolution" improved

We present a new method of extracting electron-boson spectral function $\alpha^2$F($\omega$) from infrared and photoemission data. This procedure is based on inverse theory and will be shown to be superior to previous techniques. Numerical implementation of the algorithm is presented in detail and then used to accurately determine the doping and temperature dependence of the spectral function in several families of high-T$_c$ superconductors. Principal limitations of extracting $\alpha^2$F($\omega$) from experimental data will be pointed out. We directly compare the IR and ARPES $\alpha^2$F($\omega$) and discuss the resonance structure in the spectra in terms of existing theoretical models.

A scaling relation \rho_s \simeq 35\sigma_{dc}T_c has been observed in the copper-oxide superconductors, where \rho_s is the strength of the superconducting condensate, T_c is the critical temperature, and \sigma_{dc} is the normal-state dc conductivity close to T_c. This scaling relation is examined within the context of a clean and dirty-limit BCS superconductor. These limits are well established for an isotropic BCS gap 2\Delta and a normal-state scattering rate 1/\tau; in the clean limit 1/\tau \ll 2\Delta, and in the dirty limit 1/\tau > 2\Delta. The dirty limit may also be defined operationally as the regime where \rho_s varies with 1/\tau. It is shown that the scaling relation \rho_s \propto \sigma_{dc}T_c is the hallmark of a BCS system in the dirty-limit. While the gap in the copper-oxide superconductors is considered to be d-wave with nodes and a gap maximum \Delta_0, if 1/\tau > 2\Delta_0 then the dirty-limit case is preserved. The scaling relation implies that the copper-oxide superconductors are likely to be in the dirty limit, and that as a result the energy scale associated with the formation of the condensate is scaling linearly with T_c. The a-b planes and the c axis also follow the same scaling relation. It is observed that the scaling behavior for the dirty limit and the Josephson effect (assuming a BCS formalism) are essentially identical, suggesting that in some regime these two effects may be viewed as equivalent. This raises the possibility that electronic inhomogeneities in the copper-oxygen planes may play an important role in the nature of the superconductivity in the copper-oxide materials., Comment: 8 pages with 5 figures and 1 table