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In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way towards voltage control of these properties in solid-state devices. Here we show that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magnetoelectric coupling mechanisms. We directly observe, for the first time, in situ voltage driven O$^{2-}$ migration in a Co/metal-oxide bilayer, which we use to toggle the interfacial magnetic anisotropy energy by >0.6 erg/cm$^2$. We exploit the thermally-activated nature of ion migration to dramatically increase the switching efficiency and to demonstrate reversible patterning of magnetic properties through local activation of ionic migration. These results suggest a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.

In this paper we present the parameterization of a new interionic potential for stoichiometric, reduced and doped CeO$_2$. We use a dipole-polarizable potential (DIPPIM) and optimize its parameters by fitting them to a series of DFT calculations. The resulting potential was tested by calculating a series of fundamental properties for CeO$_2$ and by comparing them to experimental values. The agreement for all the calculated properties (thermal and chemical expansion coefficients, lattice parameters, oxygen migration energies, local crystalline structure and elastic constants) is within 10-15% of the experimental one, an accuracy comparable to that of ab initio calculations. This result suggests the use of this new potential for reliably predicting atomic-scale properties of CeO$_2$ in problems where ab initio calculations are not feasible due to their size-limitations., Comment: 12 pages, 6 figures and 5 tables. Accepted on Journal of Physics: Condensed Matter

The tracer diffusion of O-18 in La(2-x)Sr(x)CuO(4-y) single crystals (x = 0 to 0.12) has been measured from 400 to 700 C in 1 atm of oxygen using SIMS analysis. Evidence for diffusion by a vacancy mechanism was found at low strontium contents. Oxygen diffusivities for x greater than or = 0.07 were depressed by several orders of magnitude below the diffusivity for undoped La2CuO(4+/-y). The observed effects of strontium doping on oxygen diffusivity are discussed in terms of defect chemical models. The decreasing oxygen diffusivity with increasing strontium was attributed to the ordering of oxygen vacancies at large defect concentrations. A diffusion anisotropy D(sub ab)/D(sub c) of nearly 600 was also found at 500 C.